JP5783890B2 - プラズマ処理方法 - Google Patents
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- JP5783890B2 JP5783890B2 JP2011267454A JP2011267454A JP5783890B2 JP 5783890 B2 JP5783890 B2 JP 5783890B2 JP 2011267454 A JP2011267454 A JP 2011267454A JP 2011267454 A JP2011267454 A JP 2011267454A JP 5783890 B2 JP5783890 B2 JP 5783890B2
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- 238000003672 processing method Methods 0.000 title claims description 24
- 239000007789 gas Substances 0.000 claims description 94
- 238000004140 cleaning Methods 0.000 claims description 76
- 238000001020 plasma etching Methods 0.000 claims description 45
- 239000000460 chlorine Substances 0.000 claims description 41
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 34
- 229910052801 chlorine Inorganic materials 0.000 claims description 34
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 17
- 239000000758 substrate Substances 0.000 claims description 11
- 239000001257 hydrogen Substances 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 9
- 229910052759 nickel Inorganic materials 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 8
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 claims description 7
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 claims description 6
- 238000009616 inductively coupled plasma Methods 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 150000002431 hydrogen Chemical class 0.000 claims description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims 1
- 229910001882 dioxygen Inorganic materials 0.000 claims 1
- 238000005530 etching Methods 0.000 description 62
- 235000012431 wafers Nutrition 0.000 description 31
- 238000000034 method Methods 0.000 description 21
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 17
- 229910002091 carbon monoxide Inorganic materials 0.000 description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 11
- 230000006698 induction Effects 0.000 description 10
- 230000015654 memory Effects 0.000 description 10
- 229910052715 tantalum Inorganic materials 0.000 description 10
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052742 iron Inorganic materials 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- IRPGOXJVTQTAAN-UHFFFAOYSA-N 2,2,3,3,3-pentafluoropropanal Chemical compound FC(F)(F)C(F)(F)C=O IRPGOXJVTQTAAN-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminum fluoride Inorganic materials F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- 229910003321 CoFe Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000001273 butane Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- FQMNUIZEFUVPNU-UHFFFAOYSA-N cobalt iron Chemical compound [Fe].[Co].[Co] FQMNUIZEFUVPNU-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000696 magnetic material Substances 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- IJDNQMDRQITEOD-UHFFFAOYSA-N n-butane Chemical compound CCCC IJDNQMDRQITEOD-UHFFFAOYSA-N 0.000 description 1
- OFBQJSOFQDEBGM-UHFFFAOYSA-N n-pentane Natural products CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000036962 time dependent Effects 0.000 description 1
- 239000003039 volatile agent Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Manufacturing & Machinery (AREA)
- Analytical Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Mram Or Spin Memory Techniques (AREA)
- Hall/Mr Elements (AREA)
Description
最初に、本発明を適用するプラズマエッチング装置について図1を用いて説明する。
エッチング処理室は、プラズマ生成部を形成する石英(SiO2)もしくはセラミック(Al2O3)の非導電性材料からなる放電部2と、被処理基板であるウエハ12が載置され、高周波バイアス電力が供給される電極6が配置されたプラズマ処理部3とから構成される。また、プラズマ処理部3は、接地されており、電極6は、絶縁材を介してプラズマ処理部3に配置されている。放電部2の外側には、第一の誘導アンテナ1aと第二の誘導アンテナ1bとからなる誘導アンテナ1と、誘導アンテナ1と放電部2との間に配置され、容量結合アンテナであるファラデーシールド9と、整合器4を介してプラズマを生成するための高周波電力を誘導アンテナ1に供給する第一の高周波電源10とが設けられている。
最初に、図2に示すようなウエハ12を搬送装置(図示せず)によりエッチング処理室内の電極6に載置する(S1)。
実施例1で説明した本発明のプラズマ処理方法では、磁性膜のプラズマエッチング中に炭素系の堆積物が多く発生すると、S4ステップの第一のプラズマクリーニングの負担が大きくなり、第一のプラズマクリーニングの処理時間が増加してしまう。これは、第一のプラズマクリーニング用のガスとして、塩素を含有するガスを用いているため、炭素系の堆積物の除去速度はあまり速くない。
除去できるプラズマ処理方法について説明する。
1a 第一の誘導アンテナ
1b 第二の誘導アンテナ
2 放電部
3 プラズマ処理部
4 整合器
5 ガス供給装置
6 電極
7 プラズマ
8 排気装置
9 ファラデーシールド
10 第一の高周波電源
11 第二の高周波電源
12 ウエハ
13 シリコン基板
14 磁性膜
15 タンタル(Ta)膜
Claims (7)
- 磁性膜をプラズマエッチングするプラズマ処理方法において、
塩素を含有するガス以外のガスである第一のガスを用いて前記磁性膜をプラズマ処理室でプラズマエッチングし、
前記プラズマエッチングされた磁性膜が配置された被処理基板を前記プラズマ処理室から搬出した後、前記プラズマ処理室をプラズマクリーニングし、
前記プラズマクリーニングは、塩素を含有する第二のガスを用いてプラズマクリーニングする第一のプラズマクリーニングと、前記第一のプラズマクリーニング後、水素を含有するガスを用いてプラズマクリーニングする第二のプラズマクリーニングとを有することを特徴とするプラズマ処理方法。 - 請求項1に記載のプラズマ処理方法において、
前記プラズマクリーニングは、前記第一のプラズマクリーニング前、酸素ガスを用いてプラズマクリーニングすることを特徴とするプラズマ処理方法。 - 請求項1または請求項2に記載のプラズマ処理方法において、
前記第二のガスは、塩素ガス、三塩素ホウ素ガスまたは塩素ガスと三塩化ホウ素ガスの混合ガスであることを特徴とするプラズマ処理方法。 - 請求項1ないし請求項3のいずれか一項に記載のプラズマ処理方法において、
前記水素を含有するガスは、メタノールガスであることを特徴とするプラズマ処理方法。 - 請求項1ないし請求項4のいずれか一項に記載のプラズマ処理方法において、
前記磁性膜は、少なくとも、鉄元素、コバルト元素、ニッケル元素の一つを含有する膜であることを特徴とするプラズマ処理方法。 - 請求項1ないし請求項5のいずれか一項に記載のプラズマ処理方法において、
前記プラズマ処理室は、ファラデーシールドを具備する誘導結合型プラズマ処理装置に備えられ、
前記第二のプラズマクリーニングは、前記第一のプラズマクリーニングにおける前記ファラデーシールドに印加された電圧より低い電圧を前記ファラデーシールドに印加しながらプラズマクリーニングすることを特徴とするプラズマ処理方法。 - 塩素を含有するガス以外のガスである第一のガスを用いて磁性膜をプラズマ処理室でプラズマエッチングする第一の工程と、
前記プラズマエッチングされた磁性膜が配置された被処理基板を前記プラズマ処理室から搬出する第二の工程と、
塩素を含有する第二のガスを用いて前記プラズマ処理室をプラズマクリーニングする第三の工程と、
水素を含有するガスを用いて前記プラズマ処理室をプラズマクリーニングする第四の工程とを有し、
前記第一の工程から前記第四の工程までの各工程を順次行うことを特徴とするプラズマ処理方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2011267454A JP5783890B2 (ja) | 2011-12-07 | 2011-12-07 | プラズマ処理方法 |
KR1020120007301A KR101266053B1 (ko) | 2011-12-07 | 2012-01-25 | 플라즈마 처리 방법 |
TW101104031A TWI457971B (zh) | 2011-12-07 | 2012-02-08 | Plasma processing method |
US13/399,030 US8591752B2 (en) | 2011-12-07 | 2012-02-17 | Plasma processing method |
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JP2011267454A JP5783890B2 (ja) | 2011-12-07 | 2011-12-07 | プラズマ処理方法 |
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JP2013120810A JP2013120810A (ja) | 2013-06-17 |
JP2013120810A5 JP2013120810A5 (ja) | 2014-10-09 |
JP5783890B2 true JP5783890B2 (ja) | 2015-09-24 |
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US (1) | US8591752B2 (ja) |
JP (1) | JP5783890B2 (ja) |
KR (1) | KR101266053B1 (ja) |
TW (1) | TWI457971B (ja) |
Families Citing this family (8)
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JP5887366B2 (ja) * | 2013-03-26 | 2016-03-16 | 東京エレクトロン株式会社 | 遷移金属を含む膜をエッチングする方法 |
JP6227483B2 (ja) * | 2014-05-30 | 2017-11-08 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
JP6499980B2 (ja) * | 2016-01-04 | 2019-04-10 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法 |
US10453925B2 (en) * | 2016-01-29 | 2019-10-22 | Taiwan Semiconductor Manufacturing Co., Ltd. | Epitaxial growth methods and structures thereof |
WO2017213193A1 (ja) * | 2016-06-10 | 2017-12-14 | 東京エレクトロン株式会社 | 銅層をエッチングする方法 |
JP6745199B2 (ja) * | 2016-06-10 | 2020-08-26 | 東京エレクトロン株式会社 | 銅層をエッチングする方法 |
JP7241627B2 (ja) * | 2019-07-05 | 2023-03-17 | 東京エレクトロン株式会社 | クリーニング方法及びプラズマ処理装置 |
JP7515560B2 (ja) | 2022-03-18 | 2024-07-12 | 株式会社Kokusai Electric | ガスクリーニング方法、半導体装置の製造方法、基板処理方法、プログラム及び基板処理装置 |
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KR20030085879A (ko) * | 2002-05-02 | 2003-11-07 | 삼성전자주식회사 | 반도체소자 제조용 건식식각장치의 세정방법 |
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KR101630234B1 (ko) * | 2009-11-17 | 2016-06-15 | 주성엔지니어링(주) | 공정챔버의 세정방법 |
JP2010168663A (ja) * | 2010-03-26 | 2010-08-05 | Canon Anelva Corp | プラズマ処理装置 |
JP2013051227A (ja) * | 2011-08-30 | 2013-03-14 | Hitachi High-Technologies Corp | プラズマエッチング方法 |
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