JP5780062B2 - 基板処理装置及び成膜装置 - Google Patents
基板処理装置及び成膜装置 Download PDFInfo
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- 239000000758 substrate Substances 0.000 title claims description 86
- 238000012545 processing Methods 0.000 title claims description 44
- 239000007789 gas Substances 0.000 claims description 74
- 239000010408 film Substances 0.000 claims description 44
- 239000012495 reaction gas Substances 0.000 claims description 21
- 238000000926 separation method Methods 0.000 claims description 19
- 238000010438 heat treatment Methods 0.000 claims description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 8
- 239000010453 quartz Substances 0.000 claims description 7
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 5
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 description 23
- 238000004140 cleaning Methods 0.000 description 10
- 238000012546 transfer Methods 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 3
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CGRVKSPUKAFTBN-UHFFFAOYSA-N N-silylbutan-1-amine Chemical compound CCCCN[SiH3] CGRVKSPUKAFTBN-UHFFFAOYSA-N 0.000 description 2
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 239000002052 molecular layer Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
- C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68771—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting more than one semiconductor substrate
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Description
前記複数の処理領域に反応ガスを夫々供給するための複数の反応ガス供給手段と、
前記複数の処理領域の雰囲気を互いに分離するために前記回転方向においてこれら処理領域の間に位置する分離領域と、
前記処理容器内を排気するための排気口と、
前記載置領域の他面側を熱輻射により加熱することにより前記基板を加熱する加熱部と、
を備え、
前記回転テーブルは、前記載置領域に相当する部位であって、当該回転テーブルの一面側から他面側までを形成する基板載置部と、この基板載置部以外の部位であるテーブル本体と、から構成され、前記基板載置部はテーブル本体よりも熱容量の小さい材質により構成されており、
前記基板載置部はテーブル本体に対して着脱自在に構成される平板状部材であり、
前記テーブル本体は、当該テーブル本体を一面側から他面側に貫通する貫通孔と、当該貫通孔の側面から貫通孔の内側に向かって突出し、前記基板載置部が載置されて保持される保持部と、を備え、
前記回転テーブルの他面は凹部を備え、前記凹部の底面は前記基板載置部により構成され、
回転テーブルの一面側には基板がその内部に載置される基板載置用の凹部が設けられ、当該基板載置用の凹部の底面は前記基板載置部により、側面はテーブル本体により夫々構成され、
前記基板載置部には回転テーブルの一面側から他面側に向かって多数の孔が設けられ、
前記多数の孔は、基板載置部に基板を受け渡すために昇降するピンが通過するための貫通孔と、前記ピンが通過せず、基板載置部の熱容量を抑えるために設けられた貫通孔と、により構成されることを特徴とする。
(1)前記テーブル本体は石英により構成され、前記基板載置部は窒化アルミニウム、炭化シリコンまたはカーボンにより構成される。
また、本発明の成膜装置は、処理容器内にて回転テーブルの一面側の載置領域に載置された基板を回転テーブルの回転により公転させることにより、当該回転テーブル上の基板に複数種類の反応ガスを順番に供給し、反応生成物の層を積層して薄膜を形成する成膜装置において、
前記複数の処理領域に反応ガスを夫々供給するための複数の反応ガス供給手段と、
前記複数の処理領域の雰囲気を互いに分離するために前記回転方向においてこれら処理領域の間に位置する分離領域と、
前記処理容器内を排気するための排気口と、
前記載置領域の他面側を熱輻射により加熱することにより前記基板を加熱する加熱部と、
を備え、
前記回転テーブルは、前記載置領域に相当する部位であって、当該回転テーブルの一面側から他面側までを形成する基板載置部と、この基板載置部以外の部位であるテーブル本体と、から構成され、前記基板載置部はテーブル本体よりも熱容量の小さい材質により構成されており、
前記基板載置部はテーブル本体に対して着脱自在に構成される平板状部材であり、
前記テーブル本体は、当該テーブル本体を一面側から他面側に貫通する貫通孔と、当該貫通孔の側面から貫通孔の内側に向かって突出し、前記基板載置部が載置されて保持される保持部と、を備え、
前記回転テーブルの他面は凹部を備え、前記凹部の底面は前記基板載置部により構成され、
回転テーブルの一面側には基板がその内部に載置される基板載置用の凹部が設けられ、当該基板載置用の凹部の底面は前記基板載置部により、側面はテーブル本体により夫々構成され、
前記基板載置部には回転テーブルの一面側から他面側に向かって多数の孔が設けられ、
前記多数の孔は、基板載置部に基板を受け渡すために昇降するピンが通過するための貫通孔と、前記ピンが通過せず、基板載置部の熱容量を抑えるために設けられた貫通孔と、により構成されることを特徴とする。
D 分離領域
P1、P2 処理領域
1 成膜装置
11 真空容器
2 回転テーブル
21 凹部
22 テーブル本体
23 ウエハ載置板
26 貫通孔
31、33 反応ガスノズル
32、34 分離ガスノズル
Claims (3)
- 処理容器内にて回転テーブルの一面側の載置領域に載置された基板を回転テーブルの回転により公転させることにより複数の処理領域を順次通過させ、基板にガス処理を行う基板処理装置において、
前記複数の処理領域に反応ガスを夫々供給するための複数の反応ガス供給手段と、
前記複数の処理領域の雰囲気を互いに分離するために前記回転方向においてこれら処理領域の間に位置する分離領域と、
前記処理容器内を排気するための排気口と、
前記載置領域の他面側を熱輻射により加熱することにより前記基板を加熱する加熱部と、
を備え、
前記回転テーブルは、前記載置領域に相当する部位であって、当該回転テーブルの一面側から他面側までを形成する基板載置部と、この基板載置部以外の部位であるテーブル本体と、から構成され、前記基板載置部はテーブル本体よりも熱容量の小さい材質により構成されており、
前記基板載置部はテーブル本体に対して着脱自在に構成される平板状部材であり、
前記テーブル本体は、当該テーブル本体を一面側から他面側に貫通する貫通孔と、当該貫通孔の側面から貫通孔の内側に向かって突出し、前記基板載置部が載置されて保持される保持部と、を備え、
前記回転テーブルの他面は凹部を備え、前記凹部の底面は前記基板載置部により構成され、
回転テーブルの一面側には基板がその内部に載置される基板載置用の凹部が設けられ、前記凹部の底面は前記基板載置部により構成され
前記基板載置部には回転テーブルの一面側から他面側に向かって多数の孔が設けられ、
前記多数の孔は、基板載置部に基板を受け渡すために昇降するピンが通過するための貫通孔と、前記ピンが通過せず、基板載置部の熱容量を抑えるために設けられた貫通孔と、により構成されることを特徴とする基板処理装置。 - 前記テーブル本体は石英により構成され、前記基板載置部は窒化アルミニウム、炭化シリコンまたはカーボンにより構成されることを特徴とする請求項1記載の基板処理装置。
- 処理容器内にて回転テーブルの一面側の載置領域に載置された基板を回転テーブルの回転により公転させることにより、当該回転テーブル上の基板に複数種類の反応ガスを順番に供給し、反応生成物の層を積層して薄膜を形成する成膜装置において、
前記複数の処理領域に反応ガスを夫々供給するための複数の反応ガス供給手段と、
前記複数の処理領域の雰囲気を互いに分離するために前記回転方向においてこれら処理領域の間に位置する分離領域と、
前記処理容器内を排気するための排気口と、
前記載置領域の他面側を熱輻射により加熱することにより前記基板を加熱する加熱部と、
を備え、
前記回転テーブルは、前記載置領域に相当する部位であって、当該回転テーブルの一面側から他面側までを形成する基板載置部と、この基板載置部以外の部位であるテーブル本体と、から構成され、前記基板載置部はテーブル本体よりも熱容量の小さい材質により構成されており、
前記基板載置部はテーブル本体に対して着脱自在に構成される平板状部材であり、
前記テーブル本体は、当該テーブル本体を一面側から他面側に貫通する貫通孔と、当該貫通孔の側面から貫通孔の内側に向かって突出し、前記基板載置部が載置されて保持される保持部と、を備え、
前記回転テーブルの他面は凹部を備え、前記凹部の底面は前記基板載置部により構成され、
回転テーブルの一面側には基板がその内部に載置される基板載置用の凹部が設けられ、当該基板載置用の凹部の底面は前記基板載置部により、側面はテーブル本体により夫々構成され、
前記基板載置部には回転テーブルの一面側から他面側に向かって多数の孔が設けられ、
前記多数の孔は、基板載置部に基板を受け渡すために昇降するピンが通過するための貫通孔と、前記ピンが通過せず、基板載置部の熱容量を抑えるために設けられた貫通孔と、により構成されることを特徴とする成膜装置。
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TW101131274A TWI573894B (zh) | 2011-08-30 | 2012-08-29 | 基板處理裝置及成膜裝置 |
KR1020120094759A KR101593730B1 (ko) | 2011-08-30 | 2012-08-29 | 기판 처리 장치 및 성막 장치 |
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JP5423529B2 (ja) * | 2010-03-29 | 2014-02-19 | 東京エレクトロン株式会社 | 成膜装置、成膜方法及び記憶媒体 |
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