JP5777586B2 - 半導体装置及びその製造方法 - Google Patents
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- 239000004065 semiconductor Substances 0.000 title claims description 114
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 150000004767 nitrides Chemical class 0.000 claims description 80
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 24
- 238000005468 ion implantation Methods 0.000 claims description 22
- 238000000137 annealing Methods 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 12
- 239000000470 constituent Substances 0.000 claims description 10
- 239000000460 chlorine Substances 0.000 claims description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 4
- 229910052801 chlorine Inorganic materials 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 2
- 229910052786 argon Inorganic materials 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052731 fluorine Inorganic materials 0.000 claims description 2
- 239000011737 fluorine Substances 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims 1
- 230000004888 barrier function Effects 0.000 description 60
- 150000002500 ions Chemical class 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000005533 two-dimensional electron gas Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910002601 GaN Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000003278 mimic effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/2003—Nitride compounds
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02387—Group 13/15 materials
- H01L21/02389—Nitrides
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
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- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Junction Field-Effect Transistors (AREA)
Description
図1は、第1実施形態の半導体装置51の模式断面図である。第1実施形態では、半導体装置51として、ショットキーバリアダイオードを例示する。
図7(a)は、第2実施形態の半導体装置61の模式断面図である。第2実施形態では、半導体装置61として、ショットキーゲートトランジスタを例示する。
Claims (8)
- III族元素を含む第1の窒化物半導体層と、
前記第1の窒化物半導体層上に設けられ、前記第1の窒化物半導体層よりもバンドギャップが大きく、III族元素を含む第2の窒化物半導体層と、
前記第2の窒化物半導体層上に設けられ、III族元素を含む第3の窒化物半導体層と、
前記第3の窒化物半導体層に接して、前記第3の窒化物半導体層上に設けられた絶縁膜と、
前記第2の窒化物半導体層に対してオーミック接触したオーミック電極と、
前記第2の窒化物半導体層に対してショットキー接触したショットキー電極と、
を備え、
前記オーミック電極と前記ショットキー電極との間における前記第3の窒化物半導体層の表面領域は、前記第3の窒化物半導体層の構成元素と異種の元素を、前記第3の窒化物半導体層における前記表面領域よりも前記第2の窒化物半導体層側の領域よりも高濃度で含み、
前記異種の元素を含む領域は、前記第3の窒化物半導体層と前記絶縁膜との界面を挟んで前記第3の窒化物半導体層の前記表面領域および前記絶縁膜の前記第3の窒化物半導体層側の領域に広がっている半導体装置。 - 前記異種の元素は、ホウ素、アルゴン、鉄、フッ素または塩素である請求項1記載の半導体装置。
- III族元素を含む第1の窒化物半導体層と、
前記第1の窒化物半導体層上に設けられ、前記第1の窒化物半導体層よりもバンドギャップが大きく、III族元素を含む第2の窒化物半導体層と、
前記第2の窒化物半導体層上に設けられ、III族元素を含む第3の窒化物半導体層と、
前記第3の窒化物半導体層に接して、前記第3の窒化物半導体層上に設けられた絶縁膜と、
前記第2の窒化物半導体層に対してオーミック接触したオーミック電極と、
前記第2の窒化物半導体層に対してショットキー接触したショットキー電極と、
を備え、
前記オーミック電極と前記ショットキー電極との間における前記第3の窒化物半導体層の表面領域の前記III族元素と窒素との結合数は、前記第3の窒化物半導体層における前記表面領域よりも前記第2の窒化物半導体層側の領域の前記III族元素と窒素との結合数よりも少ない半導体装置。 - 前記第3の窒化物半導体層の前記表面領域の窒素濃度は、前記表面領域よりも前記第2の窒化物半導体層側の前記領域の窒素濃度よりも高い請求項3記載の半導体装置。
- III族元素を含む第1の窒化物半導体層上に、前記第1の窒化物半導体層よりもバンドギャップが大きく、III族元素を含む第2の窒化物半導体層を形成する工程と、
前記第2の窒化物半導体層上に、III族元素を含む第3の窒化物半導体層を形成する工程と、
前記第3の窒化物半導体層上に、前記第3の窒化物半導体層に接する絶縁膜を形成する工程と、
前記第2の窒化物半導体層に対してオーミック接触するオーミック電極を形成する工程と、
前記第2の窒化物半導体層に対してショットキー接触するショットキー電極を形成する工程と、
前記オーミック電極を形成した後、アニールする工程と、
前記アニールの後、前記第3の窒化物半導体層の表面領域に、イオン注入法により、前記第3の窒化物半導体層の構成元素と異種または同種の元素を注入する工程と、
を備えた半導体装置の製造方法。 - 前記オーミック電極を形成した後、アニールする工程をさらに備え、
前記アニールの後、前記ショットキー電極を形成する請求項5記載の半導体装置の製造方法。 - 前記第3の窒化物半導体層上に前記絶縁膜を形成した後に、前記第3の窒化物半導体層と前記絶縁膜との界面を挟む前記第3の窒化物半導体層の前記表面領域および前記絶縁膜の前記第3の窒化物半導体層側の領域に、前記元素を注入する請求項5または6に記載の半導体装置の製造方法。
- 前記第3の窒化物半導体層上に前記絶縁膜を形成する前に、前記第3の窒化物半導体層の前記表面領域に、前記元素を注入する請求項5または6に記載の半導体装置の製造方法。
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JP6198039B2 (ja) * | 2013-04-12 | 2017-09-20 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
CN105453272B (zh) * | 2013-08-19 | 2020-08-21 | 出光兴产株式会社 | 氧化物半导体基板及肖特基势垒二极管元件 |
CN104465795B (zh) * | 2014-11-19 | 2017-11-03 | 苏州捷芯威半导体有限公司 | 一种肖特基二极管及其制作方法 |
CN105789296B (zh) * | 2015-12-29 | 2019-01-25 | 中国电子科技集团公司第五十五研究所 | 一种铝镓氮化合物/氮化镓高电子迁移率晶体管 |
TWI695418B (zh) * | 2017-09-22 | 2020-06-01 | 新唐科技股份有限公司 | 半導體元件及其製造方法 |
CN113270478B (zh) * | 2021-04-23 | 2023-02-17 | 北京大学深圳研究生院 | 化合物半导体续流功率晶体管 |
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JP2010258148A (ja) | 2009-04-23 | 2010-11-11 | Sharp Corp | 化合物半導体素子 |
JP2011146613A (ja) * | 2010-01-18 | 2011-07-28 | Mitsubishi Electric Corp | ヘテロ接合電界効果型トランジスタおよびその製造方法 |
JP5209018B2 (ja) | 2010-09-30 | 2013-06-12 | 株式会社東芝 | 窒化物半導体装置 |
JP5418482B2 (ja) | 2010-12-08 | 2014-02-19 | 富士通株式会社 | 化合物半導体積層構造 |
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CN103681884A (zh) | 2014-03-26 |
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