JP5774201B2 - 新規な化合物半導体及びその活用 - Google Patents
新規な化合物半導体及びその活用 Download PDFInfo
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- JP5774201B2 JP5774201B2 JP2014506350A JP2014506350A JP5774201B2 JP 5774201 B2 JP5774201 B2 JP 5774201B2 JP 2014506350 A JP2014506350 A JP 2014506350A JP 2014506350 A JP2014506350 A JP 2014506350A JP 5774201 B2 JP5774201 B2 JP 5774201B2
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic System
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G51/00—Compounds of cobalt
- C01G51/006—Compounds containing, besides cobalt, two or more other elements, with the exception of oxygen or hydrogen
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
- C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F15/00—Compounds containing elements of Groups 8, 9, 10 or 18 of the Periodic System
- C07F15/06—Cobalt compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F3/00—Compounds containing elements of Groups 2 or 12 of the Periodic System
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic System
- C07F9/90—Antimony compounds
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N10/00—Thermoelectric devices comprising a junction of dissimilar materials, i.e. devices exhibiting Seebeck or Peltier effects
- H10N10/80—Constructional details
- H10N10/85—Thermoelectric active materials
- H10N10/851—Thermoelectric active materials comprising inorganic compositions
- H10N10/853—Thermoelectric active materials comprising inorganic compositions comprising arsenic, antimony or bismuth
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Description
試薬として、In 0.0510g、Co 0.3873g、Sb 2.2923g、Co3O4 0.0428g、Te 127.6gを用意し、これらを乳鉢(mortar)を利用してよく混合した。このように混合された材料は、石英管(silica tube)の中に入れ真空密封して650℃で36時間加熱し、昇温時間は1時間30分にして、In0.25Co4Sb10.6O0.4Te粉末を得た。
試薬として、In、Co、及びSbを用意し、これらを乳鉢を利用してよく混合してIn0.25Co4Sb12組成の混合物をペレットの形態で製作した。そして、H2(1.94%)及びN2ガスを流しながら500℃で15時間加熱し、このとき昇温時間は1時間30分にした。このように混合された材料は、石英管の中に入れ真空密封して650℃で36時間加熱し、昇温時間は1時間30分にして、In0.25Co4Sb12粉末を得た。
ここで、σは電気伝導度、Sはゼーベック係数、Tは温度、κは熱伝導度を示す。
Claims (9)
- 前記化学式1のnは、0<n≦0.4であることを特徴とする請求項1に記載の化合物半導体。
- 前記化学式1のxは、0<x≦0.25であることを特徴とする請求項1または2に記載の化合物半導体。
- 前記化学式1のn及びzは、0<n+z≦3であることを特徴とする請求項1〜3のいずれか一項に記載の化合物半導体。
- In、Co、Sb、Te及びCo 3 O 4 を含む原料を粉末形態で混合して、請求項1に記載の化学式1に対応する組成を有する混合物を形成するステップと、
真空中、または水素、Ar、He及びN 2 のうち少なくとも一つの気体を流しながら前記混合物を400℃ないし800℃の温度で加熱して熱処理するステップと、
を含む請求項1に記載の化合物半導体の製造方法。 - 前記熱処理ステップは、450℃ないし700℃で行われることを特徴とする請求項5に記載の化合物半導体の製造方法。
- 前記熱処理ステップは、2つ以上の熱処理段階を含むことを特徴とする請求項5または6に記載の化合物半導体の製造方法。
- 請求項1〜4のうちいずれか一項に記載の化合物半導体を含む熱電変換素子。
- 請求項1〜4のうちいずれか一項に記載の化合物半導体を含む太陽電池。
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20110045349 | 2011-05-13 | ||
KR10-2011-0045348 | 2011-05-13 | ||
KR20110045348 | 2011-05-13 | ||
KR10-2011-0045349 | 2011-05-13 | ||
KR10-2011-0049609 | 2011-05-25 | ||
KR20110049609 | 2011-05-25 | ||
PCT/KR2012/003738 WO2012157915A1 (ko) | 2011-05-13 | 2012-05-11 | 신규한 화합물 반도체 및 그 활용 |
KR1020120050459A KR101453036B1 (ko) | 2011-05-13 | 2012-05-11 | 신규한 화합물 반도체 및 그 활용 |
KR10-2012-0050459 | 2012-05-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2014519547A JP2014519547A (ja) | 2014-08-14 |
JP5774201B2 true JP5774201B2 (ja) | 2015-09-09 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2014506350A Active JP5774201B2 (ja) | 2011-05-13 | 2012-05-11 | 新規な化合物半導体及びその活用 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8636925B2 (ja) |
EP (1) | EP2708503B1 (ja) |
JP (1) | JP5774201B2 (ja) |
KR (1) | KR101453036B1 (ja) |
CN (1) | CN103517872B (ja) |
TW (1) | TWI469931B (ja) |
WO (1) | WO2012157915A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2708498B1 (en) * | 2011-05-13 | 2017-08-16 | LG Chem, Ltd. | Novel compound semiconductor and usage for same |
WO2012157916A1 (ko) * | 2011-05-13 | 2012-11-22 | 주식회사 엘지화학 | 신규한 화합물 반도체 및 그 활용 |
KR102122573B1 (ko) * | 2017-03-09 | 2020-06-12 | 주식회사 엘지화학 | 신규한 화합물 반도체 및 그 활용 |
WO2023164067A1 (en) * | 2022-02-25 | 2023-08-31 | Stryker Corporation | Communication system for patient support apparatuses and temperature management devices |
Family Cites Families (20)
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JPH01298010A (ja) * | 1988-05-26 | 1989-12-01 | Mitsubishi Metal Corp | 金属セレン化物の製造方法 |
JPH02199006A (ja) * | 1989-01-30 | 1990-08-07 | Agency Of Ind Science & Technol | 1/2/5の組成を有する多元系金属カルコゲナイド |
JP2002270907A (ja) * | 2001-03-06 | 2002-09-20 | Nec Corp | 熱電変換材料とそれを用いた素子 |
WO2005036660A2 (en) * | 2003-09-12 | 2005-04-21 | Board Of Trustees Operating Michigan State University | Silver-containing thermoelectric compounds |
JP2005116746A (ja) * | 2003-10-07 | 2005-04-28 | Toshiba Corp | 熱電変換材料及びこれを用いた熱電変換素子 |
US7462217B2 (en) * | 2003-12-08 | 2008-12-09 | E.I. Du Pont De Nemours And Company | Method of preparation for the high performance thermoelectric material indium-cobalt-antimony |
EP1735846A2 (en) * | 2004-04-14 | 2006-12-27 | E.I.Du pont de nemours and company | High performance thermoelectric materials and their method of preparation |
JP5055747B2 (ja) * | 2004-11-10 | 2012-10-24 | 大日本印刷株式会社 | 金属酸化物膜の製造方法 |
EP1938343A4 (en) * | 2005-10-17 | 2010-07-28 | Agency Science Tech & Res | NEW PHASE CHANGE MATERIAL |
AU2007217870B2 (en) * | 2006-02-16 | 2011-07-21 | Brigham Young University | Preparation of uniform nanoparticles of ultra-high purity metal oxides, mixed metal oxides, metals, and metal alloys |
JP5028616B2 (ja) * | 2006-08-03 | 2012-09-19 | 国立大学法人宇都宮大学 | 金属硫化物の製造方法 |
JP5205904B2 (ja) * | 2006-09-29 | 2013-06-05 | 大日本印刷株式会社 | 金属酸化物膜の製造方法、および積層体 |
KR100910173B1 (ko) * | 2007-09-10 | 2009-07-30 | 충주대학교 산학협력단 | CoSb3 스커테루다이트계 열전재료 및 그 제조방법 |
JP5749437B2 (ja) * | 2008-01-23 | 2015-07-15 | 古河機械金属株式会社 | 熱電変換材料および熱電変換モジュール |
JP2009253301A (ja) * | 2008-04-04 | 2009-10-29 | Samsung Electronics Co Ltd | ジカルコゲナイド熱電材料 |
EP2319082B1 (en) * | 2008-08-29 | 2017-11-15 | LG Chem, Ltd. | New compound semiconductor and producing method thereof, and solar cell and thermoelectric conversion element using the same |
CN101397612B (zh) * | 2008-10-21 | 2011-05-25 | 同济大学 | 一种方钴矿基热电块体材料的制备方法 |
KR101042575B1 (ko) * | 2009-08-11 | 2011-06-20 | 충주대학교 산학협력단 | In-Co-Fe-Sb 계 스커테루다이트 열전재료 및 그 제조방법 |
KR101042574B1 (ko) * | 2009-08-11 | 2011-06-20 | 충주대학교 산학협력단 | In-Co-Ni-Sb 계 스커테루다이트 열전재료 및 그 제조방법 |
EP2708498B1 (en) * | 2011-05-13 | 2017-08-16 | LG Chem, Ltd. | Novel compound semiconductor and usage for same |
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2012
- 2012-05-11 CN CN201280022977.2A patent/CN103517872B/zh active Active
- 2012-05-11 WO PCT/KR2012/003738 patent/WO2012157915A1/ko active Application Filing
- 2012-05-11 KR KR1020120050459A patent/KR101453036B1/ko active IP Right Grant
- 2012-05-11 EP EP12786280.3A patent/EP2708503B1/en active Active
- 2012-05-11 JP JP2014506350A patent/JP5774201B2/ja active Active
- 2012-05-14 TW TW101117052A patent/TWI469931B/zh active
- 2012-09-14 US US13/616,679 patent/US8636925B2/en active Active
Also Published As
Publication number | Publication date |
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US8636925B2 (en) | 2014-01-28 |
TW201305061A (zh) | 2013-02-01 |
KR20120127321A (ko) | 2012-11-21 |
US20130009106A1 (en) | 2013-01-10 |
CN103517872B (zh) | 2015-08-05 |
TWI469931B (zh) | 2015-01-21 |
CN103517872A (zh) | 2014-01-15 |
JP2014519547A (ja) | 2014-08-14 |
EP2708503A1 (en) | 2014-03-19 |
EP2708503B1 (en) | 2017-02-15 |
EP2708503A4 (en) | 2015-04-01 |
WO2012157915A1 (ko) | 2012-11-22 |
KR101453036B1 (ko) | 2014-10-22 |
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