JP5761026B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5761026B2 JP5761026B2 JP2011541802A JP2011541802A JP5761026B2 JP 5761026 B2 JP5761026 B2 JP 5761026B2 JP 2011541802 A JP2011541802 A JP 2011541802A JP 2011541802 A JP2011541802 A JP 2011541802A JP 5761026 B2 JP5761026 B2 JP 5761026B2
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Description
(一般式(1)において、R1、R2、R3は炭素数1〜4の炭化水素基であり、互いに同一であっても異なっていてもよい、nは0〜2の整数である)
で表されるシランカップリング剤(E)および/またはその加水分解縮合物を含む半導体封止用エポキシ樹脂組成物によって封止して得られる半導体装置が提供される。
で表されるシランカップリング剤および/またはその加水分解縮合物である。
(一般式(3)において、R4〜R11は各々、水素原子および炭素数1〜4のアルキル基から選ばれ、互いに同一であっても異なっていてもよい)
で表されるエポキシ樹脂を含む。
(一般式(4)において、mは1〜5の整数であり、nは0〜5の整数である)
で表されるフェノール樹脂を含む。
(一般式(5)において、R12は少なくとも2個の炭素原子を有する有機基であり、R13は少なくとも2個の炭素原子を有する有機基であり、R14およびR15は少なくとも一つの二重結合を有する有機基であり、互いに同一であっても異なっていてもよい)
で表されるポリイミド前駆体を脱アルコールして得られるポリイミドである。
(一般式(3)において、R4〜R11は各々水素原子、炭素数1〜4のアルキル基から選ばれ、互いに同一であっても異なっていてもよい)。
(一般式(4)において、mは1〜5の整数であり、nは0〜5の整数である)。
(一般式(1)において、R1、R2、R3は炭素数1〜4の炭化水素基であり、互いに同一であっても異なっていてもよく、nは0〜2の整数である)。
以下、参考形態の例を付記する。
1.ポリイミドにより一部または全部が被覆された半導体素子を、エポキシ樹脂(A)、フェノール樹脂(B)、硬化促進剤(C)、無機充填材(D)、ならびに、上記一般式(1)で表されるシランカップリング剤(E)および/またはその加水分解縮合物を含む半導体封止用エポキシ樹脂組成物によって封止して得られる半導体装置。
2.前記シランカップリング剤(E)および/またはその加水分解縮合物が上記式(2)で表されるシランカップリング剤および/またはその加水分解縮合物である1.記載の半導体装置。
3.前記シランカップリング剤(E)および/またはその加水分解縮合物の割合が半導体封止用エポキシ組成物全体の0.01〜1.0質量%である1.に記載の半導体装置。
4.前記エポキシ樹脂(A)が上記一般式(3)で表されるエポキシ樹脂を含む1.に記載の半導体装置。
5.前記フェノール樹脂(B)が上記一般式(4)で表されるフェノール樹脂を含む1.に記載の半導体装置。
6.前記ポリイミドが上記一般式(5)で表されるポリイミド前駆体を脱アルコールして得られるポリイミドである1.に記載の半導体装置。
7.前記一般式(5)で表されるポリイミド前駆体のR 12 、R 13 、R 14 、R 15 が上記式(6)で表される基である6.に記載の半導体装置。
8.前記半導体素子が基板の片面に搭載され、前記基板の前記半導体素子が搭載された面のみが、前記半導体封止用エポキシ樹脂組成物で封止されている、エリア実装型半導体装置である1.に記載の半導体装置。
9.前記半導体素子が開口部を有する基板の片面に搭載され、前記基板の前記半導体素子が搭載された面および前記開口部が、前記半導体封止用エポキシ樹脂組成物で封止されている、ボード・オン・チップ型半導体装置である1.に記載の半導体装置。
下記材料をミキサーで混合した後、表面温度が90℃と45℃の2本ロールを用いて混練し、冷却後粉砕してエポキシ樹脂組成物を調製した。得られたエポキシ樹脂組成物を以下の方法で評価した。結果を表1に示す。
エポキシ樹脂1:一般式(3)で表されるビフェニル型エポキシ樹脂(ジャパンエポキシレジン株式会社製、YX4000K、融点105℃、エポキシ当量185、一般式(3)のR4、R6、R9、R11がメチル基で、R5、R7、R8、R10が水素原子である成分を主成分とする):7.1質量部
シランカップリング剤1:下記式(2)で表されるシランカップリング剤(日本ユニカー株式会社製、AZ−6137)を加水分解し縮重合して得られたシランカップリング剤:0.2質量部
離型剤:グリセリントリモンタン酸エステル(クラリアントジャパン株式会社製、リコルブ(登録商標)WE4):0.2質量部
カーボンブラック(三菱化学工業株式会社製、MA600):0.3質量部
スパイラルフロー:低圧トランスファー成形機(コータキ精機株式会社製、KTS−15)を用いて、ANSI/ASTM D 3123−72に準じたスパイラルフロー測定用金型に、金型温度175℃、注入圧力6.9MPa、硬化時間120秒の条件でエポキシ樹脂組成物を注入し、流動長を測定した。単位はcm。
耐半田性2: 耐半田性1の吸湿処理時間を168時間とした以外は耐半田性1と同様に実施した。
半導体素子:サイズ10mm×10mm、厚さ0.35mm。
ポリイミド膜:3,3',4,4'−ベンゾフェノンテトラカルボン酸の2−ヒドロキシエチルメタクリレートジエステルとビス[4−(4−アミノフェノキシ)フェニル]スルホンとの脱水縮合体(ポリイミド前駆体)を、脱アルコールして得られたポリイミド。
表1の配合に従い、実施例1と同様にしてエポキシ樹脂組成物を調製し、同様に評価した。これらの評価結果を表1に示す。
エポキシ樹脂2:オルソクレゾールノボラック型エポキシ樹脂(DIC株式会社製、N660、軟化点62℃、エポキシ当量210)
フェノール樹脂2:フェノールノボラック樹脂(住友ベークライト株式会社製、PR−HF−3、軟化点80℃、水酸基当量104)
シランカップリング剤4:下記式(8)で表されるシランカップリング剤(日本ユニカー株式会社製、A−187)
Claims (9)
- 前記シランカップリング剤(E)の加水分解縮合物の割合が半導体封止用エポキシ組成物全体の0.01〜1.0質量%である請求項1に記載の半導体装置。
- 前記半導体素子が基板の片面に搭載され、前記基板の前記半導体素子が搭載された面のみが、前記半導体封止用エポキシ樹脂組成物で封止されている、エリア実装型半導体装置である請求項1に記載の半導体装置。
- 前記半導体素子が開口部を有する基板の片面に搭載され、前記基板の前記半導体素子が搭載された面および前記開口部が、前記半導体封止用エポキシ樹脂組成物で封止されている、ボード・オン・チップ型半導体装置である請求項1に記載の半導体装置。
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PCT/JP2010/006617 WO2011061906A1 (ja) | 2009-11-19 | 2010-11-11 | 半導体装置 |
JP2011541802A JP5761026B2 (ja) | 2009-11-19 | 2010-11-11 | 半導体装置 |
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JP (1) | JP5761026B2 (ja) |
KR (2) | KR20170088448A (ja) |
CN (1) | CN102612743B (ja) |
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KR20160097429A (ko) * | 2015-02-06 | 2016-08-18 | 삼성디스플레이 주식회사 | 표시 장치 |
TWI723211B (zh) * | 2016-09-23 | 2021-04-01 | 日商住友電木股份有限公司 | 熱硬化性樹脂組成物、樹脂密封基板及電子裝置 |
JP7128633B2 (ja) * | 2018-03-01 | 2022-08-31 | 株式会社日本触媒 | 樹脂組成物および光学フィルター |
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CN1808702A (zh) * | 2005-01-20 | 2006-07-26 | 矽品精密工业股份有限公司 | 半导体封装结构及其制法 |
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2010
- 2010-11-11 US US13/510,734 patent/US20120228784A1/en not_active Abandoned
- 2010-11-11 CN CN201080052423.8A patent/CN102612743B/zh active Active
- 2010-11-11 SG SG10201407493PA patent/SG10201407493PA/en unknown
- 2010-11-11 WO PCT/JP2010/006617 patent/WO2011061906A1/ja active Application Filing
- 2010-11-11 KR KR1020177020756A patent/KR20170088448A/ko not_active Application Discontinuation
- 2010-11-11 KR KR1020127015401A patent/KR20120104247A/ko active Application Filing
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KR20120104247A (ko) | 2012-09-20 |
US20120228784A1 (en) | 2012-09-13 |
TW201129626A (en) | 2011-09-01 |
CN102612743A (zh) | 2012-07-25 |
WO2011061906A1 (ja) | 2011-05-26 |
JPWO2011061906A1 (ja) | 2013-04-04 |
CN102612743B (zh) | 2016-08-10 |
SG10201407493PA (en) | 2014-12-30 |
KR20170088448A (ko) | 2017-08-01 |
TWI535776B (zh) | 2016-06-01 |
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