JP5735029B2 - 電子デバイス封止用樹脂シート及び電子デバイスパッケージの製造方法 - Google Patents
電子デバイス封止用樹脂シート及び電子デバイスパッケージの製造方法 Download PDFInfo
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- JP5735029B2 JP5735029B2 JP2013069860A JP2013069860A JP5735029B2 JP 5735029 B2 JP5735029 B2 JP 5735029B2 JP 2013069860 A JP2013069860 A JP 2013069860A JP 2013069860 A JP2013069860 A JP 2013069860A JP 5735029 B2 JP5735029 B2 JP 5735029B2
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- 238000004321 preservation Methods 0.000 description 1
- 239000011164 primary particle Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920003987 resole Polymers 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- AYEKOFBPNLCAJY-UHFFFAOYSA-O thiamine pyrophosphate Chemical compound CC1=C(CCOP(O)(=O)OP(O)(O)=O)SC=[N+]1CC1=CN=C(C)N=C1N AYEKOFBPNLCAJY-UHFFFAOYSA-O 0.000 description 1
- CVNKFOIOZXAFBO-UHFFFAOYSA-J tin(4+);tetrahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[Sn+4] CVNKFOIOZXAFBO-UHFFFAOYSA-J 0.000 description 1
- NBXZNTLFQLUFES-UHFFFAOYSA-N triethoxy(propyl)silane Chemical compound CCC[Si](OCC)(OCC)OCC NBXZNTLFQLUFES-UHFFFAOYSA-N 0.000 description 1
- VTHOKNTVYKTUPI-UHFFFAOYSA-N triethoxy-[3-(3-triethoxysilylpropyltetrasulfanyl)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCSSSSCCC[Si](OCC)(OCC)OCC VTHOKNTVYKTUPI-UHFFFAOYSA-N 0.000 description 1
- JXUKBNICSRJFAP-UHFFFAOYSA-N triethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CCO[Si](OCC)(OCC)CCCOCC1CO1 JXUKBNICSRJFAP-UHFFFAOYSA-N 0.000 description 1
- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- QLAGHGSFXJZWKY-UHFFFAOYSA-N triphenylborane;triphenylphosphane Chemical compound C1=CC=CC=C1B(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 QLAGHGSFXJZWKY-UHFFFAOYSA-N 0.000 description 1
- 239000002966 varnish Substances 0.000 description 1
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- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
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- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
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- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
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- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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Description
なお、最低溶融粘度は、実施例に記載の方法で測定できる。
なお、平均粒径は、例えば、母集団から任意に抽出される試料を用い、レーザー回折散乱式粒度分布測定装置を用いて測定することにより導き出すことができる。
なお、平均粒径は、例えば、母集団から任意に抽出される試料を用い、レーザー回折散乱式粒度分布測定装置を用いて測定することにより導き出すことができる。
シリカは通常、比重2.2g/cm3であるので、シリカの含有量(重量%)の好適範囲は例えば以下のとおりである。
すなわち、樹脂シート11中のシリカの含有量は、81重量%以上が好ましく、84重量%以上がより好ましい。樹脂シート11中のシリカの含有量は、94重量%以下が好ましく、91重量%以下がより好ましい。
すなわち、樹脂シート11中のアルミナの含有量は、88重量%以上が好ましく、90重量%以上がより好ましい。樹脂シート11中のアルミナの含有量は、97重量%以下が好ましく、95重量%以下がより好ましい。
図2A〜2Cはそれぞれ、本発明の一実施形態に係る電子デバイスパッケージの製造方法の一工程を模式的に示す図である。本実施形態では、プリント配線基板12上に搭載されたSAWフィルタ13を樹脂シート11により中空封止して電子デバイスパッケージを作製する。
SAWフィルタ搭載基板準備工程では、複数のSAWフィルタ13が搭載されたプリント配線基板12を準備する(図2A参照)。SAWフィルタ13は、所定の櫛形電極が形成された圧電結晶を公知の方法でダイシングして個片化することにより形成できる。SAWフィルタ13のプリント配線基板12への搭載には、フリップチップボンダーやダイボンダーなどの公知の装置を用いることができる。SAWフィルタ13とプリント配線基板12とはバンプなどの突起電極13aを介して電気的に接続されている。また、SAWフィルタ13とプリント配線基板12との間は、SAWフィルタ表面での表面弾性波の伝播を阻害しないように中空部分14を維持するようになっている。SAWフィルタ13とプリント配線基板12との間の距離は適宜設定でき、一般的には15〜50μm程度である。
封止工程では、SAWフィルタ13を覆うようにプリント配線基板12へ樹脂シート11を積層し、SAWフィルタ13を樹脂シート11で樹脂封止する(図2B参照)。樹脂シート11は、SAWフィルタ13及びそれに付随する要素を外部環境から保護するための封止樹脂として機能する。
封止体形成工程では、樹脂シート11を熱硬化処理して封止体15を形成する(図2B参照)。
続いて、封止体15のダイシングを行ってもよい(図2C参照)。これにより、SAWフィルタ13単位での電子デバイスパッケージ18を得ることができる。
必要に応じて、電子デバイスパッケージ18に対して再配線及びバンプを形成し、これを別途の基板(図示せず)に実装する基板実装工程を行うことができる。電子デバイスパッケージ18の基板への実装には、フリップチップボンダーやダイボンダーなどの公知の装置を用いることができる。
エポキシ樹脂:新日鐵化学(株)製のYSLV−80XY(ビスフェノールF型エポキシ樹脂、エポキン当量200g/eq.軟化点80℃)
フェノール樹脂:明和化成社製のMEH−7851−SS(ビフェニルアラルキル骨格を有するフェノール樹脂、水酸基当量203g/eq.軟化点67℃)
熱可塑性樹脂:三菱レイヨン社製メタブレンC−132E(MBS樹脂、平均粒径120μm)
フィラー:電気化学工業社製のFB−9454FC(溶融球状シリカ、平均粒子径20μm)
シランカップリング剤:信越化学社製のKBM−403(3−グリシドキシプロピルトリメトキシシラン)
シランカップリング剤処理フィラー:電気化学工業社製のFB−9454FC(溶融球状シリカ、平均一次粒子径20μm)を信越化学社製のKBM−403(3−グリシドキシプロピルトリメトキシシラン)で処理したもの(FB−9454FC 87.9重量部に対して、KBM−403 0.5重量部の割合で処理)
カーボンブラック:三菱化学社製の#20
難燃剤:伏見製薬所製のFP−100(ホスファゼン化合物)
硬化促進剤1:四国化成工業社製の2PHZ−PW(2−フェニル−4,5−ジヒドロキシメチルイミダゾール)
硬化促進剤2(包摂錯体):5−ニトロイソフタル酸と式(1)で表される2−エチル−4−メチルイミダゾールからなる包摂錯体
硬化促進剤3(包摂錯体):5−ニトロイソフタル酸と式(2)で表される2−フェニル−4,5−ジヒドロキシメチルイミダゾールからなる包摂錯体
硬化促進剤4(包摂錯体):5−ニトロイソフタル酸と式(3)で表される2−フェニル−4−メチル−5−ヒドロキシメチルイミダゾールからなる包摂錯体
硬化促進剤5:北興化学工業社製のTPP(トリフェニルホースフィン)
硬化促進剤6:四国化成工業社製の2E4MZ(2−エチル−4−メチルイミダゾール)
表1に記載の配合比に従い、各成分を配合し、ロール混練機により60〜120℃、10分間、減圧条件下(0.01kg/cm2)で溶融混練し、混練物を調製した。次いで、得られた混練物を、平板プレス法により、シート状に形成して、厚さ200μmの樹脂シートを作製した。
樹脂シートを直径4mmの円形状に打抜いてサンプルを作製した。このサンプルについて、示差走査熱量計(TA Instrument製、DSC Q2000)を用いて、−50℃から300℃まで10℃/分で昇温させて、DSC曲線を描き、描いたDSC曲線から発熱開始温度及び発熱ピーク温度を読み取った。なお、発熱カーブの2次微分値がゼロになる温度で発熱カーブに接線を引き、ベースラインとの交点の温度を読み取り、これを発熱開始温度とした。
描いたDSC曲線から、発熱ピーク温度±30℃の温度範囲における面積(面積A)と、発熱ピーク面積全体(面積B)を求めた。そして、下記式により、発熱ピーク温度±30℃における発熱量の割合を算出した。
発熱ピーク温度±30℃の発熱量の割合(%)=面積A/面積B×100
動的粘弾性測定装置(TAインスツルメント社製、ARES)を用いて樹脂シートの最低溶融粘度を測定した(測定条件:ギャップ1mm、パラレルプレート直径8mm、測定周波数0.1Hz、50℃〜150℃まで10℃/minで昇温測定)。
25℃で4週間保存した後の樹脂シートについて、保存前と同様の方法で、最低溶融粘度を測定した。
11a 支持体
13 SAWフィルタ
14 中空部分
15 封止体
18 電子デバイスパッケージ
Claims (6)
- エポキシ樹脂、フェノール樹脂、平均粒径5〜500μmの熱可塑性樹脂、フィラーおよびイミダゾール系硬化促進剤を含む混練物をシート状に塑性加工する工程を含む方法により得られ、
示差走査熱量計により測定される発熱開始温度が120℃以上であり、発熱ピーク温度が
150〜200℃である電子デバイス封止用樹脂シート。 - 前記示差走査熱量計により測定されるDSC曲線において、発熱ピーク温度±30℃の温
度範囲における面積が、発熱ピーク面積全体に対して70%以上である請求項1に記載の
電子デバイス封止用樹脂シート。 - 25℃の条件下で4週間保存した後の最低溶融粘度が、保存前の最低溶融粘度の2倍以下
である請求項1又は2に記載の電子デバイス封止用樹脂シート。 - 前記電子デバイス封止用樹脂シート中の前記フィラーの含有量が70〜90体積%である請求項1〜3のいずれかに記載の電子デバイス封止用樹脂シート。
- 前記イミダゾール系硬化促進剤が潜在性硬化促進剤である請求項1〜4のいずれかに記載
の電子デバイス封止用樹脂シート。 - 1又は複数の電子デバイスを覆うように請求項1〜5のいずれかに記載の電子デバイス封
止用樹脂シートを前記電子デバイス上に積層する積層工程、及び
前記電子デバイス封止用樹脂シートを硬化させて封止体を形成する封止体形成工程を含む
電子デバイスパッケージの製造方法。
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CN201480019069.7A CN105074907B (zh) | 2013-03-28 | 2014-03-20 | 电子器件密封用树脂片以及电子器件封装体的制造方法 |
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SG11201507886UA SG11201507886UA (en) | 2013-03-28 | 2014-03-20 | Resin sheet for sealing electronic device and method of manufacturing electronic device package |
TW106143388A TW201811973A (zh) | 2013-03-28 | 2014-03-25 | 電子元件密封用樹脂薄片及電子元件封裝體之製造方法 |
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