JP5690977B2 - 撮像素子及び撮像装置 - Google Patents
撮像素子及び撮像装置 Download PDFInfo
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- JP5690977B2 JP5690977B2 JP2014519881A JP2014519881A JP5690977B2 JP 5690977 B2 JP5690977 B2 JP 5690977B2 JP 2014519881 A JP2014519881 A JP 2014519881A JP 2014519881 A JP2014519881 A JP 2014519881A JP 5690977 B2 JP5690977 B2 JP 5690977B2
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
- H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
- H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
- H04N25/134—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements based on three different wavelength filter elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
- H01L27/14605—Structural or functional details relating to the position of the pixel elements, e.g. smaller pixel elements in the center of the imager compared to pixel elements at the periphery
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
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- Color Television Image Signal Generators (AREA)
- Solid State Image Pick-Up Elements (AREA)
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Description
奇数行と偶数行のそれぞれにある各マイクロレンズは、異なる色の光を検出する2つの光電変換部に跨って配置されているものである。
本出願は、2012年6月7日出願の日本特許出願(特願2012−129816)に基づくものであり、その内容はここに取り込まれる。
50 画素セル
51 マイクロレンズ
Claims (5)
- 行方向とこれに直交する列方向に格子状に配置された多数の画素セルを有する撮像素子であって、
前記多数の画素セルは、赤色光を検出する光電変換部を含む第一の画素セル、緑色光を検出する光電変換部を含む第二の画素セル、及び青色光を検出する光電変換部を含む第三の画素セルを含み、
前記行方向に並ぶ画素セルからなる各画素セル行には、同色光を検出する光電変換部を含む隣接する2つの画素セルをペアとして当該ペアが周期的に配置されており、
前記行方向に隣接する2つの画素セル毎に、当該2つの画素セルの各々に含まれる2つの前記光電変換部に跨る1つのマイクロレンズが設けられており、
前記マイクロレンズの配列は、奇数行の画素セル行にあるマイクロレンズが、偶数行の画素セル行にあるマイクロレンズに対し、各画素セル行における前記マイクロレンズの配列ピッチの1/2、前記行方向にずれたものとなっており、
奇数行と偶数行の少なくとも一方にある各マイクロレンズは、異なる色の光を検出する2つの光電変換部に跨って配置されており、
奇数行にある前記ペアは、偶数行にある前記ペアに対し、各画素セル行における前記ペアの配列ピッチの1/2、前記行方向にずれて配置されており、
奇数行と偶数行のそれぞれにある各マイクロレンズは、異なる色の光を検出する2つの光電変換部に跨って配置されている撮像素子。 - 請求項1記載の撮像素子であって、
偶数行と奇数行の一方だけをみたときに、赤色光を検出するペアであるRペアと緑色光を検出するペアであるGペアと青色光を検出するペアであるBペアとがベイヤ状に配列され、
偶数行と奇数行の他方だけをみたときに、前記Rペアと前記Gペアと前記Bペアとがベイヤ状に配列されている撮像素子。 - 請求項1記載の撮像素子であって、
偶数行と奇数行の一方だけをみたときに、市松位置に赤色光を検出するペアであるRペアが配置され、残りの市松位置に緑色光を検出するペアであるGペアが配置されており、
偶数行と奇数行の他方だけをみたときに、市松位置に青色光を検出するペアであるBペアが配置され、残りの市松位置に前記Gペアが配置されている撮像素子。 - 請求項1記載の撮像素子であって、
偶数行と奇数行の一方だけをみたときに、赤色光を検出するペアであるRペア、緑色光を検出するペアであるGペア、青色光を検出するペアであるBペア、及び前記Gペアをこの順に並べた単位を行方向にくり返し配置した行と、前記Gペア、前記Rペア、前記Gペア、及び前記Bペアをこの順に並べた単位を行方向にくり返し配置した行とが前記列方向に交互に並べられており、
偶数行と奇数行の他方だけをみたときに、前記Bペア、前記Gペア、前記Rペア、及び前記Gペアをこの順に並べた単位を行方向にくり返し配置した行と、前記Gペア、前記Bペア、前記Gペア、及び前記Rペアをこの順に並べた単位を行方向にくり返し配置した行とが前記列方向に交互に並べられている撮像素子。 - 請求項1〜4のいずれか1項記載の撮像素子を備える撮像装置。
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JP2014519881A JP5690977B2 (ja) | 2012-06-07 | 2013-04-25 | 撮像素子及び撮像装置 |
Applications Claiming Priority (4)
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---|---|---|---|
JP2012129816 | 2012-06-07 | ||
JP2012129816 | 2012-06-07 | ||
PCT/JP2013/062255 WO2013183382A1 (ja) | 2012-06-07 | 2013-04-25 | 撮像素子及び撮像装置 |
JP2014519881A JP5690977B2 (ja) | 2012-06-07 | 2013-04-25 | 撮像素子及び撮像装置 |
Publications (2)
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JP5690977B2 true JP5690977B2 (ja) | 2015-03-25 |
JPWO2013183382A1 JPWO2013183382A1 (ja) | 2016-01-28 |
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JP2014519881A Expired - Fee Related JP5690977B2 (ja) | 2012-06-07 | 2013-04-25 | 撮像素子及び撮像装置 |
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US (1) | US9386285B2 (ja) |
JP (1) | JP5690977B2 (ja) |
CN (1) | CN104350739B (ja) |
WO (1) | WO2013183382A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11381768B2 (en) | 2019-05-07 | 2022-07-05 | Samsung Electronics Co., Ltd. | Image sensor with pixels including photodiodes sharing floating diffusion region |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
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WO2014112002A1 (ja) * | 2013-01-15 | 2014-07-24 | オリンパス株式会社 | 撮像素子、及び撮像装置 |
KR102268712B1 (ko) * | 2014-06-23 | 2021-06-28 | 삼성전자주식회사 | 자동 초점 이미지 센서 및 이를 포함하는 디지털 영상 처리 장치 |
TWI709340B (zh) * | 2014-11-27 | 2020-11-01 | 日商索尼半導體解決方案公司 | 固體攝像元件及電子機器 |
WO2016115338A1 (en) * | 2015-01-14 | 2016-07-21 | Emanuele Mandelli | Phase-detect autofocus |
US10091488B2 (en) * | 2016-07-07 | 2018-10-02 | Visera Technologies Company Limited | 3D image sensor and 3D image-capturing device |
WO2018075581A1 (en) | 2016-10-20 | 2018-04-26 | Invisage Technologies, Inc. | Noise mitigation in image sensors with selectable row readout |
CN106488148B (zh) | 2016-11-01 | 2019-09-17 | 首都师范大学 | 一种超分辨率图像传感器及其构造方法 |
EP3590134A4 (en) * | 2017-02-28 | 2020-10-14 | BAE Systems Imaging Solutions Inc. | AUTOFOCUS SYSTEM FOR CMOS IMAGING SENSORS |
US10567636B2 (en) * | 2017-08-07 | 2020-02-18 | Qualcomm Incorporated | Resolution enhancement using sensor with plural photodiodes per microlens |
CN108776389A (zh) * | 2018-08-27 | 2018-11-09 | 张家港康得新光电材料有限公司 | 一种3d膜及3d显示装置 |
TWI743750B (zh) * | 2020-04-20 | 2021-10-21 | 錼創顯示科技股份有限公司 | 微型發光元件顯示裝置 |
KR20230118760A (ko) * | 2020-12-16 | 2023-08-14 | 소니 세미컨덕터 솔루션즈 가부시키가이샤 | 촬상 장치 |
CN115706176B (zh) * | 2021-08-09 | 2023-12-12 | 北京一径科技有限公司 | 光电探测器、设备及存储介质 |
WO2023162496A1 (ja) * | 2022-02-28 | 2023-08-31 | ソニーセミコンダクタソリューションズ株式会社 | 撮像装置 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2007317951A (ja) * | 2006-05-26 | 2007-12-06 | Nikon Corp | 光検出素子および撮像装置 |
WO2012042963A1 (ja) * | 2010-09-29 | 2012-04-05 | 富士フイルム株式会社 | 固体撮像素子及び撮像装置 |
WO2012161225A1 (ja) * | 2011-05-24 | 2012-11-29 | ソニー株式会社 | 固体撮像素子およびカメラシステム |
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US7522341B2 (en) * | 2005-07-12 | 2009-04-21 | Micron Technology, Inc. | Sharing of microlenses among pixels in image sensors |
JP5359465B2 (ja) * | 2009-03-31 | 2013-12-04 | ソニー株式会社 | 固体撮像装置、固体撮像装置の信号処理方法および撮像装置 |
JP5513623B2 (ja) * | 2010-08-24 | 2014-06-04 | 富士フイルム株式会社 | 固体撮像装置 |
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2013
- 2013-04-25 JP JP2014519881A patent/JP5690977B2/ja not_active Expired - Fee Related
- 2013-04-25 CN CN201380029917.8A patent/CN104350739B/zh active Active
- 2013-04-25 WO PCT/JP2013/062255 patent/WO2013183382A1/ja active Application Filing
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2014
- 2014-12-05 US US14/562,361 patent/US9386285B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007317951A (ja) * | 2006-05-26 | 2007-12-06 | Nikon Corp | 光検出素子および撮像装置 |
WO2012042963A1 (ja) * | 2010-09-29 | 2012-04-05 | 富士フイルム株式会社 | 固体撮像素子及び撮像装置 |
WO2012161225A1 (ja) * | 2011-05-24 | 2012-11-29 | ソニー株式会社 | 固体撮像素子およびカメラシステム |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11381768B2 (en) | 2019-05-07 | 2022-07-05 | Samsung Electronics Co., Ltd. | Image sensor with pixels including photodiodes sharing floating diffusion region |
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Publication number | Publication date |
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US9386285B2 (en) | 2016-07-05 |
CN104350739A (zh) | 2015-02-11 |
WO2013183382A1 (ja) | 2013-12-12 |
US20150092092A1 (en) | 2015-04-02 |
CN104350739B (zh) | 2016-05-11 |
JPWO2013183382A1 (ja) | 2016-01-28 |
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