JP5687450B2 - 被覆導体 - Google Patents
被覆導体 Download PDFInfo
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- JP5687450B2 JP5687450B2 JP2010168386A JP2010168386A JP5687450B2 JP 5687450 B2 JP5687450 B2 JP 5687450B2 JP 2010168386 A JP2010168386 A JP 2010168386A JP 2010168386 A JP2010168386 A JP 2010168386A JP 5687450 B2 JP5687450 B2 JP 5687450B2
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- coated conductor
- layer
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- temperature superconductor
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- 239000004020 conductor Substances 0.000 title claims description 102
- 239000000758 substrate Substances 0.000 claims description 61
- 239000002887 superconductor Substances 0.000 claims description 55
- 238000004519 manufacturing process Methods 0.000 claims description 20
- 239000000463 material Substances 0.000 claims description 20
- 230000007935 neutral effect Effects 0.000 claims description 15
- 239000000919 ceramic Substances 0.000 claims description 12
- 229910052727 yttrium Inorganic materials 0.000 claims description 7
- 229910052761 rare earth metal Inorganic materials 0.000 claims description 6
- 229910052797 bismuth Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052753 mercury Inorganic materials 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052716 thallium Inorganic materials 0.000 claims description 3
- 229910052765 Lutetium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims description 2
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 84
- 238000005452 bending Methods 0.000 description 22
- 229910052751 metal Inorganic materials 0.000 description 21
- 239000002184 metal Substances 0.000 description 21
- 238000000034 method Methods 0.000 description 18
- 238000000151 deposition Methods 0.000 description 8
- 239000010949 copper Substances 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 229910002480 Cu-O Inorganic materials 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 5
- 229910052788 barium Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000000465 moulding Methods 0.000 description 5
- 239000011241 protective layer Substances 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- -1 rare earth aluminate Chemical class 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000007735 ion beam assisted deposition Methods 0.000 description 3
- 229910052745 lead Inorganic materials 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 235000011499 Ferocactus hamatacanthus Nutrition 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 239000004696 Poly ether ether ketone Substances 0.000 description 2
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 2
- 229910052791 calcium Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910000510 noble metal Inorganic materials 0.000 description 2
- 125000002524 organometallic group Chemical group 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 238000004549 pulsed laser deposition Methods 0.000 description 2
- 229910001404 rare earth metal oxide Inorganic materials 0.000 description 2
- 150000002910 rare earth metals Chemical class 0.000 description 2
- 238000005096 rolling process Methods 0.000 description 2
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 241000954177 Bangana ariza Species 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- DTQVDTLACAAQTR-UHFFFAOYSA-M Trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-M 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000013522 chelant Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005315 distribution function Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000001017 electron-beam sputter deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000002595 magnetic resonance imaging Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000007770 physical coating process Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920013745 polyesteretherketone Polymers 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- WROMPOXWARCANT-UHFFFAOYSA-N tfa trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F.OC(=O)C(F)(F)F WROMPOXWARCANT-UHFFFAOYSA-N 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/20—Permanent superconducting devices
- H10N60/203—Permanent superconducting devices comprising high-Tc ceramic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
- H01B12/02—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
- H01B12/04—Single wire
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B12/00—Superconductive or hyperconductive conductors, cables, or transmission lines
- H01B12/02—Superconductive or hyperconductive conductors, cables, or transmission lines characterised by their form
- H01B12/06—Films or wires on bases or cores
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N60/00—Superconducting devices
- H10N60/01—Manufacture or treatment
- H10N60/0268—Manufacture or treatment of devices comprising copper oxide
- H10N60/0801—Manufacture or treatment of filaments or composite wires
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E40/00—Technologies for an efficient electrical power generation, transmission or distribution
- Y02E40/60—Superconducting electric elements or equipment; Power systems integrating superconducting elements or equipment
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49002—Electrical device making
- Y10T29/49014—Superconductor
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Toxicology (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Superconductors And Manufacturing Methods Therefor (AREA)
- Inorganic Compounds Of Heavy Metals (AREA)
Description
1. 金属カルボン酸塩化合物を使用する有機金属堆積法(MOD)、特に、前駆物質として、金属トリフルオル酢酸塩を使用するトリフルオル酢酸塩(TFA)ルート
2. 有機溶媒中において金属アルコキシドを前駆物質として使用するゾル・ゲル・有機金属ルート
3. 有機金属ルートの変形であるキレートプロセス
Claims (11)
- 本質的に丸い断面を備えた被覆導体を製造するための被覆導体製造方法であって、
第1の予め製造されたテープ形状の被覆導体(1)の最上層上に第2の基板層(2)を備え、第1の予め製造されたテープ形状の被覆導体の高温超伝導体層を、中立軸位置の領域とするステップと、
第2の基板層(2)で覆われた第1の予め製造されたテープ形状の被覆導体をその長手方向軸の周りに曲げて、内側の基板層と外側の基板層との間に挟まれた高温超伝導体層を備えた、本質的に丸い断面を備えた被覆導体を得るステップと、を含み、
第1の予め製造されたテープ形状の被覆導体(1)は、テープ形状の基板と、高温超伝導体層と、該テープ形状の基板と該高温超伝導体層との間に位置する少なくとも一つのバッファ層と、を含む被覆導体製造方法。 - 第2の基板層(2)が、第1の予め製造されたテープ形状の被覆導体(1)の基板層と同じ材料から作られ、同じ厚さを有する請求項1に記載の被覆導体製造方法。
- 第2の基板層(2)が、別の予め製造されたテープ形状の被覆導体であり、該別の予め製造されたテープ形状の被覆導体が、第1の予め製造されたテープ形状の被覆導体上に、両者の高温超伝導体層が向き合うように付される請求項1に記載の被覆導体製造方法。
- 高温超伝導体が、ビスマス、タリウム、イットリウム及び水銀をベースとしたセラミックス酸化物高温超伝導体からなるグループから選択される請求項1から3のいずれかに記載の被覆導体製造方法。
- セラミックス酸化物高温超伝導体が、Reは、Y またはY, La, Lu, Sc, Ce, Nd 及び Ybのグループから選択された少なくとも一つの希土類元素であり、yは酸素含有量を表すとして、一般的な式ReBaCuOyを有する請求項4に記載の被覆導体製造方法。
- 高温超伝導体材料が、Y1Ba2Cu3Oy または Y2BaCuOy である請求項5に記載の被覆導体製造方法。
- 第1の予め製造されたテープ形状の被覆導体の少なくとも一つの基板及び少なくとも一つのバッファ層が、2軸テクスチャを有する請求項1から6のいずれかに記載の被覆導体製造方法。
- 請求項1から7のいずれかに記載の被覆導体製造方法によって得ることのできる本質的に丸い断面を備えた被覆導体であって、
該被覆導体は、基板と、高温超伝導体層と、該基板と該高温超伝導体層との間に位置する少なくとも一つのバッファ層と、を含む第1の被覆導体(1)と、別の基板層(2)とからなり、該本質的に丸い断面を備えた被覆導体において、該高温超伝導体層は、第1の被覆導体(1)の基板層と該別の基板層(2)との間に挟まれており、該高温超伝導体層は、中立軸位置の領域に位置する被覆導体。 - 第1の被覆導体(1)の少なくとも一つの基板及び少なくとも一つのバッファ層が、2軸テクスチャを有する請求項8に記載の被覆導体。
- 該別の基板(2)の厚さは、第1の被覆導体(1)の基板の厚さ±5μmの範囲内である、請求項8または9に記載の被覆導体。
- 該別の基板(2)が、別の予め製造された被覆導体である請求項8または9に記載の被覆導体。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP09305752A EP2284917B1 (en) | 2009-08-13 | 2009-08-13 | Coated conductor |
EP09305752.9 | 2009-08-13 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011049160A JP2011049160A (ja) | 2011-03-10 |
JP5687450B2 true JP5687450B2 (ja) | 2015-03-18 |
Family
ID=41648479
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010168386A Expired - Fee Related JP5687450B2 (ja) | 2009-08-13 | 2010-07-27 | 被覆導体 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8644899B2 (ja) |
EP (1) | EP2284917B1 (ja) |
JP (1) | JP5687450B2 (ja) |
KR (1) | KR101696304B1 (ja) |
ES (1) | ES2389159T3 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2021262319A2 (en) * | 2020-05-07 | 2021-12-30 | Massachusetts Institute Of Technology | Cabling method of superconducting flat wires |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19724618A1 (de) * | 1997-06-11 | 1998-12-17 | Alsthom Cge Alcatel | Supraleiter aus einem längsnahtgeschweißten, gewellten Metallrohr mit einer supraleitfähigen Schicht auf der Basis keramischer Werkstoffe |
AU1750901A (en) * | 1999-07-23 | 2001-03-05 | American Superconductor Corporation | Dust cover/pellicle for a photomask |
US6765151B2 (en) * | 1999-07-23 | 2004-07-20 | American Superconductor Corporation | Enhanced high temperature coated superconductors |
US6745059B2 (en) * | 2001-11-28 | 2004-06-01 | American Superconductor Corporation | Superconductor cables and magnetic devices |
DK1916720T3 (da) | 2006-10-27 | 2009-04-14 | Nexans | Fremgangsmåde til fremstilling af en elektrisk leder med superledningsevne |
DE502006008727D1 (de) | 2006-11-17 | 2011-02-24 | Nexans | Verfahren zur Herstellung eines supraleitfähigen elektrischen Leiters |
EP2131407A1 (en) * | 2008-06-05 | 2009-12-09 | Nexans | Superconducting wire with low AC losses |
-
2009
- 2009-08-13 EP EP09305752A patent/EP2284917B1/en not_active Not-in-force
- 2009-08-13 ES ES09305752T patent/ES2389159T3/es active Active
-
2010
- 2010-07-15 US US12/836,775 patent/US8644899B2/en not_active Expired - Fee Related
- 2010-07-27 JP JP2010168386A patent/JP5687450B2/ja not_active Expired - Fee Related
- 2010-08-12 KR KR1020100077970A patent/KR101696304B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
JP2011049160A (ja) | 2011-03-10 |
ES2389159T3 (es) | 2012-10-23 |
US20120015815A1 (en) | 2012-01-19 |
KR20110017347A (ko) | 2011-02-21 |
EP2284917A1 (en) | 2011-02-16 |
US8644899B2 (en) | 2014-02-04 |
EP2284917B1 (en) | 2012-06-06 |
KR101696304B1 (ko) | 2017-01-23 |
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