JP5677222B2 - 炭化珪素半導体装置 - Google Patents
炭化珪素半導体装置 Download PDFInfo
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- JP5677222B2 JP5677222B2 JP2011162204A JP2011162204A JP5677222B2 JP 5677222 B2 JP5677222 B2 JP 5677222B2 JP 2011162204 A JP2011162204 A JP 2011162204A JP 2011162204 A JP2011162204 A JP 2011162204A JP 5677222 B2 JP5677222 B2 JP 5677222B2
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- 239000004065 semiconductor Substances 0.000 title claims description 83
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims description 64
- 229910010271 silicon carbide Inorganic materials 0.000 title claims description 63
- 229910052751 metal Inorganic materials 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 23
- 230000004888 barrier function Effects 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 12
- 229910008484 TiSi Inorganic materials 0.000 claims description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 230000002093 peripheral effect Effects 0.000 claims description 2
- 239000010408 film Substances 0.000 description 46
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
- 229920005591 polysilicon Polymers 0.000 description 23
- 239000010410 layer Substances 0.000 description 22
- 238000004519 manufacturing process Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 12
- 239000011229 interlayer Substances 0.000 description 11
- 238000001514 detection method Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 9
- 230000036413 temperature sense Effects 0.000 description 9
- 238000000059 patterning Methods 0.000 description 7
- 229910021332 silicide Inorganic materials 0.000 description 7
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 7
- 239000012535 impurity Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
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- H01L29/66068—Multistep manufacturing processes of devices having a semiconductor body comprising crystalline silicon carbide the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7803—Vertical DMOS transistors, i.e. VDMOS transistors structurally associated with at least one other device
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- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
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- General Physics & Mathematics (AREA)
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- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
Description
図1は、実施の形態1に係る炭化珪素半導体装置(以下「SiC半導体装置」)の構成を示す断面図である。ここではSiC半導体装置が半導体素子としてMOSFET(Metal-Oxide Semiconductor Field-Effect Transistor)を備える例を示す。このSiC半導体装置は、複数のMOSFETセルを有すると共に、それら複数のMOSFETセルが配設された領域を囲むように、電界集中を緩和するための終端構造が設けられた構造を有している。図1では活性領域の最外周のMOSFETセルおよび、その外側の終端構造の構成を示している。以下、MOSFETセルが配設される領域(図1の左部分)を「活性領域」、終端構造が配設される領域(図1の右部分)を「終端領域」と称す。
図10は、実施の形態2に係るSiC半導体装置のチップ30の上面図であり、測温抵抗体20のレイアウトを示している。図10において、図1に示したものに対応する要素には、それと同一の符号を付してある。
図11は、実施の形態3に係るSiC半導体装置のチップ30の上面図であり、測温抵抗体20のレイアウトを示している。図11においても、図1に示したものに対応する要素には、それと同一の符号を付してある。
実施の形態4では、測温抵抗体20に、終端構造の一部としてのフィールドプレートとしての機能を持たせる。本実施の形態における測温抵抗体20のレイアウトは、図11と同様であり、測温抵抗体20は無効領域に、チップ30の活性領域を取り囲むように配設される。
Claims (7)
- 炭化珪素基板に形成された半導体素子と、
前記炭化珪素基板上に配設され、底面にバリアメタルを備える配線層と、
前記配線層における前記バリアメタルの一部を用いて、前記半導体素子が形成された活性領域の外側の領域に形成した測温抵抗体と、を備える
ことを特徴とする炭化珪素半導体装置。 - 前記測温抵抗体は、平面視で、当該炭化珪素半導体装置のチップ中央部に配設される
請求項1記載の炭化珪素半導体装置。 - 前記測温抵抗体は、平面視で、当該炭化珪素半導体装置のチップ外周部の電流が流れない領域に配設されている
請求項1記載の炭化珪素半導体装置。 - 前記測温抵抗体は、平面視で、前記半導体素子が形成された活性領域を囲むように配設される
請求項1記載の炭化珪素半導体装置。 - 前記測温抵抗体は、前記半導体素子の外側の終端領域に配設されており、フィールドプレートとしても機能する
請求項4記載の炭化珪素半導体装置。 - 前記測温抵抗体の出力電圧を取り出すためのパッドは、前記配線層を用いて形成されている
請求項1から請求項5のいずれか一項記載の炭化珪素半導体装置。 - 前記バリアメタルは、Ti膜、TiN膜、TiSi膜、TiSi/TiN膜、TiSi/Ti膜、TiN/Ti膜、TiSi/TiN/Ti膜、Pt膜のいずれかである
請求項1から請求項6のいずれか一項記載の炭化珪素半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011162204A JP5677222B2 (ja) | 2011-07-25 | 2011-07-25 | 炭化珪素半導体装置 |
US13/417,755 US8587072B2 (en) | 2011-07-25 | 2012-03-12 | Silicon carbide semiconductor device |
CN201210117261.2A CN102903702B (zh) | 2011-07-25 | 2012-04-20 | 碳化硅半导体装置 |
DE102012207311.6A DE102012207311B4 (de) | 2011-07-25 | 2012-05-02 | Siliziumcarbid-halbleitervorrichtung und herstellungsverfahren einer siliziumcarbid-halbleitervorrichtung |
KR1020120073189A KR101286220B1 (ko) | 2011-07-25 | 2012-07-05 | 탄화 규소 반도체장치 |
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JP2011162204A JP5677222B2 (ja) | 2011-07-25 | 2011-07-25 | 炭化珪素半導体装置 |
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JP2013026563A JP2013026563A (ja) | 2013-02-04 |
JP5677222B2 true JP5677222B2 (ja) | 2015-02-25 |
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US (1) | US8587072B2 (ja) |
JP (1) | JP5677222B2 (ja) |
KR (1) | KR101286220B1 (ja) |
CN (1) | CN102903702B (ja) |
DE (1) | DE102012207311B4 (ja) |
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JP5994604B2 (ja) * | 2012-11-28 | 2016-09-21 | 住友電気工業株式会社 | 炭化珪素半導体装置およびその製造方法 |
JP6252585B2 (ja) | 2013-06-04 | 2017-12-27 | 富士電機株式会社 | 半導体装置 |
KR101917486B1 (ko) | 2014-01-29 | 2018-11-09 | 미쓰비시덴키 가부시키가이샤 | 전력용 반도체 장치 |
CN106463537B (zh) * | 2014-06-26 | 2020-01-03 | 三菱电机株式会社 | 半导体装置 |
US10128340B2 (en) * | 2015-03-18 | 2018-11-13 | Mitsubishi Electric Corporation | Power semiconductor device |
JP2017168602A (ja) * | 2016-03-15 | 2017-09-21 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6716985B2 (ja) * | 2016-03-16 | 2020-07-01 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN105895673A (zh) * | 2016-04-29 | 2016-08-24 | 佛山市南海区联合广东新光源产业创新中心 | 一种碳化硅半导体元件 |
JP6541620B2 (ja) | 2016-06-03 | 2019-07-10 | 三菱電機株式会社 | 半導体装置および半導体装置の製造方法 |
CN109716531B (zh) * | 2016-09-23 | 2022-07-29 | 三菱电机株式会社 | 碳化硅半导体装置 |
WO2018135147A1 (ja) * | 2017-01-17 | 2018-07-26 | 富士電機株式会社 | 半導体装置および半導体装置の製造方法 |
JP6638662B2 (ja) * | 2017-01-24 | 2020-01-29 | トヨタ自動車株式会社 | 半導体装置 |
DE112018006450T5 (de) * | 2017-12-19 | 2020-09-03 | Mitsubishi Electric Corporation | Siliciumcarbid-halbleiteranordnung und leistungswandler |
DE202019005650U1 (de) * | 2018-08-21 | 2021-07-06 | Mrinq Technologies Llp | System zur drahtlosen Steuerung von elektrischen Lasten |
JP7188210B2 (ja) * | 2019-03-22 | 2022-12-13 | 三菱電機株式会社 | 半導体装置 |
JP7262672B2 (ja) * | 2020-06-04 | 2023-04-21 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
JP7459292B2 (ja) | 2020-11-06 | 2024-04-01 | 三菱電機株式会社 | 半導体装置および電力変換装置 |
JP7261277B2 (ja) * | 2020-12-07 | 2023-04-19 | ローム株式会社 | 半導体装置 |
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JPH03276755A (ja) * | 1990-03-27 | 1991-12-06 | Nec Corp | 半導体装置の製造方法 |
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CN102903702B (zh) | 2016-06-22 |
US8587072B2 (en) | 2013-11-19 |
KR101286220B1 (ko) | 2013-07-15 |
DE102012207311A1 (de) | 2013-01-31 |
KR20130012548A (ko) | 2013-02-04 |
US20130026494A1 (en) | 2013-01-31 |
CN102903702A (zh) | 2013-01-30 |
DE102012207311B4 (de) | 2018-11-08 |
JP2013026563A (ja) | 2013-02-04 |
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