JP5675248B2 - Light source device and lighting device - Google Patents

Light source device and lighting device Download PDF

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JP5675248B2
JP5675248B2 JP2010218547A JP2010218547A JP5675248B2 JP 5675248 B2 JP5675248 B2 JP 5675248B2 JP 2010218547 A JP2010218547 A JP 2010218547A JP 2010218547 A JP2010218547 A JP 2010218547A JP 5675248 B2 JP5675248 B2 JP 5675248B2
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phosphor layer
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努 赤木
努 赤木
長崎　篤史
篤史 長崎
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Stanley Electric Co Ltd
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Description

本発明は、光源装置および照明装置に関する。   The present invention relates to a light source device and an illumination device.

従来、例えば特許文献１には、蛍光体を半導体レーザーで励起し、その蛍光を利用した光源、それを用いたプロジェクターが提案されている。   Conventionally, for example, Patent Document 1 proposes a light source that excites a phosphor with a semiconductor laser and uses the fluorescence, and a projector using the light source.

特開２０１０−０８６８１５号公報JP 2010-086815 A

ところで、低エネルギー密度の励起時には８０％以上の外部量子効率の蛍光体であっても、連続的に高密度エネルギー励起された場合において、蛍光体層の熱伝導が悪いと、蛍光体の発熱が蛍光体層に蓄積され蛍光体の量子効率を低下させ、更に発熱を引き起こし、その悪循環により、温度消光で輝度低下することが知られている。   By the way, even when a phosphor having an external quantum efficiency of 80% or more is excited at a low energy density, if the heat conduction of the phosphor layer is poor when the phosphor layer is continuously excited at a high density energy, the phosphor generates heat. It is known that the phosphor accumulated in the phosphor layer lowers the quantum efficiency of the phosphor, further generates heat, and due to its vicious cycle, the brightness is lowered by temperature quenching.

具体的には、蛍光体層には、一般に、シリコーン樹脂中に蛍光体を分散させたものが使用されている。ここで、蛍光体（例えばＹＡＧ結晶）の熱伝導率は１１．７Ｗ／ｍ・Ｋであるのに対して、一般的なシリコーン樹脂の熱伝導率は０．１〜０．４Ｗ／ｍ・Ｋであるため、熱伝導率の低いシリコーン樹脂成分の配合比が多いほど、蛍光体の発熱による蛍光強度低下が大きくなる。   Specifically, a phosphor layer in which a phosphor is dispersed in a silicone resin is generally used for the phosphor layer. Here, the thermal conductivity of the phosphor (for example, YAG crystal) is 11.7 W / m · K, whereas the thermal conductivity of a general silicone resin is 0.1 to 0.4 W / m · K. Therefore, the greater the compounding ratio of the silicone resin component having low thermal conductivity, the greater the decrease in fluorescence intensity due to the heat generated by the phosphor.

本発明は、シリコーン樹脂などの透明媒体中に蛍光体が分散されたものを蛍光体層に使用する場合にも、蛍光体の発熱による蛍光体層の温度上昇を抑制し、蛍光強度の低下を防止することの可能な光源装置および照明装置を提供することを目的としている。   In the present invention, even when a phosphor dispersed in a transparent medium such as a silicone resin is used for the phosphor layer, the temperature rise of the phosphor layer due to the heat generation of the phosphor is suppressed, and the fluorescence intensity is reduced. An object of the present invention is to provide a light source device and a lighting device that can be prevented.

上記目的を達成するために、請求項１記載の発明は、紫外光から緑色光までの波長領域のうちの所定の波長の光を発光する半導体レーザー光源と、前記半導体レーザー光源からの励起光により励起され前記半導体レーザー光源の発光波長より長波長の蛍光を発光する蛍光体層および前記蛍光体層を表面に設けた基板を有する蛍光体部とを備え、前記基板は、前記蛍光体層の前記励起光が入射する側の面とは反対の面側に設けられた金属材料もしくはセラミックス材料からなり、前記蛍光体層は、透明樹脂媒体中に前記透明樹脂よりも熱伝導率の高い蛍光体が分散され、厚さが７５μｍ〜１００μｍの範囲であり、前記蛍光体層における蛍光体の透明樹脂媒体に対する配合比は重量比で８０ｗｔ％〜８２ｗｔ％の範囲であり、前記蛍光体層は、熱拡散率が０．２６（×１０−６ｍ２Ｓ−１）以上であり、前記蛍光体層と前記基板表面が接着され、前記半導体レーザー光源からの励起光が、前記蛍光体層の表面側から入射し、前記基板の前記蛍光体層を接着した表面は、前記半導体レーザー光源からの励起光および前記蛍光体層からの蛍光を反射する反射面であることを特徴とする光源装置である。
In order to achieve the above object, the invention described in claim 1 is based on a semiconductor laser light source that emits light of a predetermined wavelength in a wavelength region from ultraviolet light to green light, and excitation light from the semiconductor laser light source. It is excited and a said phosphor unit having a substrate provided with a semiconductor laser light source phosphor layer and the phosphor layer than the emission wavelength to emit fluorescence having a long wavelength of the surface, the substrate, before Symbol phosphor layer The phosphor layer is made of a metal material or a ceramic material provided on the surface opposite to the surface on which the excitation light is incident, and the phosphor layer has a higher thermal conductivity than the transparent resin in the transparent resin medium. Is dispersed in a thickness of 75 μm to 100 μm, and a blending ratio of the phosphor to the transparent resin medium in the phosphor layer is in a range of 80 wt% to 82 wt% in weight ratio. The diffusivity is 0.26 (× 10 −6 m 2 S −1 ) or more, the phosphor layer and the substrate surface are bonded, and the excitation light from the semiconductor laser light source is on the surface side of the phosphor layer. The light source device is characterized in that the surface that is incident on the substrate and adheres the phosphor layer of the substrate is a reflection surface that reflects the excitation light from the semiconductor laser light source and the fluorescence from the phosphor layer.

また、請求項２記載の発明は、請求項１に記載の光源装置において、さらに回転駆動源を備えており、前記回転駆動源が、前記蛍光体層を回転軸の周りに回転させ、前記半導体レーザーが前記蛍光体層を照射する位置を分散することを特徴としている。
According to a second aspect of the present invention, the light source device according to the first aspect further comprises a rotational drive source, wherein the rotational drive source rotates the phosphor layer around a rotational axis, and the semiconductor It is characterized in that the positions where the laser irradiates the phosphor layer are dispersed .

また、請求項３記載の発明は、請求項１または請求項２に記載の光源装置と、前記光源装置からの出射光を制御する光学系とを備えたことを特徴とする照明装置である。
According to a third aspect of the present invention, there is provided an illuminating device comprising: the light source device according to the first or second aspect; and an optical system that controls light emitted from the light source device .

請求項１乃至請求項３記載の発明によれば、紫外光から緑色光までの波長領域のうちの所定の波長の光を発光する固体光源と、該固体光源からの励起光により励起され該固体光源の発光波長より長波長の蛍光を発光する蛍光体層とを備え、前記蛍光体層は、透明媒体中に蛍光体が分散されたものであって、前記蛍光体層における蛍光体の透明媒体に対する配合比は重量比で８０ｗｔ％〜８２ｗｔ％の範囲であり、前記蛍光体層の厚さは７５μｍ〜１００μｍの範囲であるので、シリコーン樹脂などの透明媒体中に蛍光体が分散されたものを蛍光体層に使用する場合にも、蛍光体の発熱による蛍光体層の温度上昇を抑制し、蛍光強度の低下を防止することができる。   According to the first to third aspects of the present invention, the solid light source that emits light having a predetermined wavelength in the wavelength region from ultraviolet light to green light, and the solid light that is excited by the excitation light from the solid light source. A phosphor layer that emits fluorescence having a wavelength longer than the emission wavelength of the light source, and the phosphor layer is a phosphor in which a phosphor is dispersed in a transparent medium, and the phosphor transparent medium in the phosphor layer The mixing ratio with respect to the weight ratio is in the range of 80 wt% to 82 wt%, and the thickness of the phosphor layer is in the range of 75 μm to 100 μm. Therefore, the phosphor is dispersed in a transparent medium such as a silicone resin. Even when used in the phosphor layer, the temperature rise of the phosphor layer due to the heat generation of the phosphor can be suppressed, and a decrease in fluorescence intensity can be prevented.

本発明の光源装置および照明装置の構成例を示す図である。It is a figure which shows the structural example of the light source device of this invention, and an illuminating device. 蛍光強度測定系を示す図である。It is a figure which shows a fluorescence intensity measurement system. 蛍光体層の蛍光体濃度をそれぞれ７５ｗｔ％、７８ｗｔ％、８０ｗｔ％、８２ｗｔ％としたときの、蛍光体層の厚さ（μｍ）に対する蛍光強度（ｍＷ）、蛍光体層の表面温度（℃）の測定結果を示す図である。Fluorescence intensity (mW) with respect to phosphor layer thickness (μm) and phosphor layer surface temperature (° C.) when the phosphor layer concentration is 75 wt%, 78 wt%, 80 wt%, and 82 wt%, respectively. It is a figure which shows the measurement result. 図３における蛍光体層の厚さ（μｍ）に対する蛍光強度（ｍＷ）の測定結果をグラフに示した図である。It is the figure which showed the measurement result of the fluorescence intensity (mW) with respect to the thickness (micrometer) of the fluorescent substance layer in FIG. 3 in the graph. 図３における蛍光体層の厚さ（μｍ）に対する蛍光体層の表面温度（℃）の測定結果をグラフに示した図である。It is the figure which showed the measurement result of the surface temperature (degreeC) of the fluorescent substance layer with respect to the thickness (micrometer) of the fluorescent substance layer in FIG. 加熱温度が１５０℃における蛍光体層２の熱拡散率の測定結果を示す図である。It is a figure which shows the measurement result of the thermal diffusivity of the fluorescent substance layer 2 in heating temperature 150 degreeC. 本発明の光源装置および照明装置の他の構成例を示す図である。It is a figure which shows the other structural example of the light source device of this invention, and an illuminating device. 本発明の光源装置および照明装置の他の構成例を示す図である。It is a figure which shows the other structural example of the light source device of this invention, and an illuminating device. 本発明の光源装置および照明装置の他の構成例を示す図である。It is a figure which shows the other structural example of the light source device of this invention, and an illuminating device. 本発明の光源装置および照明装置の他の構成例を示す図である。It is a figure which shows the other structural example of the light source device of this invention, and an illuminating device. 本発明の光源装置および照明装置の他の構成例を示す図である。It is a figure which shows the other structural example of the light source device of this invention, and an illuminating device. 本発明の光源装置および照明装置の他の構成例を示す図である。It is a figure which shows the other structural example of the light source device of this invention, and an illuminating device.

以下、本発明の実施形態を図面に基づいて説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings.

図１は、本発明の光源装置および照明装置の構成例を示す図である。図１の構成例では、光源装置は、紫外光から緑色光までの波長領域のうちの所定の波長の光を発光する固体光源５と、固体光源５からの励起光が入射する蛍光体部１２とを備えている。   FIG. 1 is a diagram illustrating a configuration example of a light source device and a lighting device according to the present invention. In the configuration example of FIG. 1, the light source device includes a solid-state light source 5 that emits light of a predetermined wavelength in a wavelength region from ultraviolet light to green light, and a phosphor portion 12 on which excitation light from the solid-state light source 5 is incident. And.

ここで、固体光源５には、紫外光から緑色光領域に発光波長をもつ発光ダイオードやレーザーダイオード（半導体レーザー）などが使用可能である。例えば、ＧａＮ系の材料を用いた約４６０ｎｍの青色光を発光するレーザーダイオードなどを用いることができる。   Here, a light emitting diode or a laser diode (semiconductor laser) having a light emission wavelength from ultraviolet light to green light can be used as the solid light source 5. For example, a laser diode that emits blue light of about 460 nm using a GaN-based material can be used.

また、蛍光体部１２は、固体光源５からの励起光により励起され固体光源５の発光波長よりも長波長の蛍光を発光する蛍光体層２と、蛍光体層２の前記励起光が入射する側の面とは反対の面側に設けられている基板６とを有している。   In addition, the phosphor portion 12 is excited by excitation light from the solid light source 5 and the phosphor layer 2 that emits fluorescence having a longer wavelength than the emission wavelength of the solid light source 5 and the excitation light of the phosphor layer 2 enter. And a substrate 6 provided on the side opposite to the side surface.

図１の構成例では、蛍光体層２は基板６上（例えば、基板６の凹部）に設けられている。また、基板６の少なくとも蛍光体層２側の面は、固体光源５からの励起光および蛍光体層２からの蛍光を反射する反射面となっている。すなわち、図１の構成例では、蛍光体層２の面のうち固体光源５からの励起光が入射する側の面とは反対側に設けられた反射面による反射を用いて蛍光などの光を取り出す方式（以下、反射方式と称す）が採用されている。   In the configuration example of FIG. 1, the phosphor layer 2 is provided on the substrate 6 (for example, a recess of the substrate 6). Further, at least the surface of the substrate 6 on the phosphor layer 2 side is a reflecting surface that reflects the excitation light from the solid light source 5 and the fluorescence from the phosphor layer 2. That is, in the configuration example of FIG. 1, light such as fluorescence is reflected using reflection by a reflection surface provided on the opposite side of the surface of the phosphor layer 2 from the surface on which excitation light from the solid light source 5 is incident. An extraction method (hereinafter referred to as a reflection method) is employed.

また、蛍光体層２に使用される蛍光体としては、紫外光から青色光領域の光を吸収し、励起光より長波長の光を発するものを用いることができる。例えば、赤色用にはＣａＡｌＳｉＮ３：Ｅｕ２＋、（Ｃａ，Ｓｒ）ＡｌＳｉＮ３：Ｅｕ２＋、Ｃａ２Ｓｉ５Ｎ８：Ｅｕ２＋、（Ｃａ，Ｓｒ）２Ｓｉ５Ｎ８：Ｅｕ２＋、ＫＳｉＦ６：Ｍｎ４＋、ＫＴｉＦ６：Ｍｎ４＋を用いることができ、黄色用にはＹ３Ａｌ５Ｏ１２：Ｃｅ３＋、（Ｓｒ，Ｂａ）２ＳｉＯ４：Ｅｕ２＋、Ｃａｘ（Ｓｉ，Ａｌ）１２（Ｏ，Ｎ）１６：Ｅｕ２＋を用いることができ、緑色用にはＬｕ３Ａｌ５Ｏ１２：Ｃｅ３＋、Ｙ３（Ｇａ，Ａｌ）５Ｏ１２：Ｃｅ３＋、Ｃａ３Ｓｃ２Ｓｉ３Ｏ１２：Ｃｅ３＋、ＣａＳｃ２Ｏ４：Ｅｕ２＋、（Ｂａ，Ｓｒ）２ＳｉＯ４：Ｅｕ２＋、Ｂａ３Ｓｉ６Ｏ１２Ｎ２：Ｅｕ２＋、（Ｓｉ，Ａｌ）６（Ｏ，Ｎ）８：Ｅｕ２＋、（Ｙ，Ｌｕ）３Ａｌ５Ｏ１２：Ｃｅ３＋等を用いることができる。ここで、青色光領域の光のみを吸収し励起光を発するものとしては、Ｙ３Ａｌ５Ｏ１２：Ｃｅ３＋、Ｌｕ３Ａｌ５Ｏ１２：Ｃｅ３＋，Ｙ３（Ａｌ，Ｇａ）５Ｏ１２：Ｃｅ３＋、（Ｙ，Ｌｕ）３Ａｌ５Ｏ１２：Ｃｅ３＋等を用いることができる。 Moreover, as a fluorescent substance used for the fluorescent substance layer 2, what absorbs the light of a blue light region from ultraviolet light and emits light with a longer wavelength than excitation light can be used. For example, for red, CaAlSiN 3 : Eu 2+ , (Ca, Sr) AlSiN 3 : Eu 2+ , Ca 2 Si 5 N 8 : Eu 2+ , (Ca, Sr) 2 Si 5 N 8 : Eu 2+ , KSiF 6 : Mn 4+ , KTiF 6 : Mn 4+ can be used, and for yellow, Y 3 Al 5 O 12 : Ce 3+ , (Sr, Ba) 2 SiO 4 : Eu 2+ , Ca x (Si, Al) 12 (O , N) 16 : Eu 2+ can be used. For green, Lu 3 Al 5 O 12 : Ce 3+ , Y 3 (Ga, Al) 5 O 12 : Ce 3+ , Ca 3 Sc 2 Si 3 O 12 : ce 3+, CaSc 2 O 4: Eu 2+, (Ba, Sr) 2 SiO 4: Eu 2+, Ba 3 Si 6 O 12 N 2: Eu 2+, (Si, Al) 6 (O, N) 8: E 2+, (Y, Lu) 3 Al 5 O 12: it can be used Ce 3+ and the like. Here, Y 3 Al 5 O 12 : Ce 3+ , Lu 3 Al 5 O 12 : Ce 3+ , Y 3 (Al, Ga) 5 O 12 can absorb only the light in the blue light region and emit excitation light. : Ce 3+ , (Y, Lu) 3 Al 5 O 12 : Ce 3+ and the like can be used.

そして、蛍光体層２には、固体光源５からの励起光により励起され固体光源５の発光波長よりも長波長の蛍光を発光する少なくとも１種類の蛍光体を含ませることができる。具体的には、固体光源５が例えば青色光を発光するものである場合、蛍光体層２には、例えば、緑、赤、黄色などの蛍光体のうち、少なくとも１種類の蛍光体を含ませることができる。固体光源５が例えば青色光を発光するものである場合、蛍光体層２が、例えば、緑、赤色の蛍光体を含んでいるときには（緑、赤色の蛍光体のそれぞれが例えば均一に分散されて混合されたものとなっているときには）、固体光源５からの青色光を蛍光体層２に照射するとき、反射光として白色などの照明光を得ることができる。また、固体光源５が例えば青色光を発光するものである場合、蛍光体層２が、例えば、黄色の蛍光体だけを含んでいるときには、固体光源５からの青色光を蛍光体層２に照射するとき、反射光として黄色または白色などの照明光を得ることができる。また、固体光源５が例えば青色光を発光するものである場合、蛍光体層２が、例えば、緑色の蛍光体だけを含んでいるときには、固体光源５からの青色光を蛍光体層２に照射するとき、反射光として緑色または青緑色などの照明光を得ることができる。   The phosphor layer 2 can include at least one phosphor that is excited by excitation light from the solid light source 5 and emits fluorescence having a longer wavelength than the emission wavelength of the solid light source 5. Specifically, when the solid light source 5 emits blue light, for example, the phosphor layer 2 includes at least one kind of phosphor among phosphors such as green, red, and yellow. be able to. When the solid light source 5 emits blue light, for example, when the phosphor layer 2 contains, for example, green and red phosphors (the green and red phosphors are dispersed uniformly, for example) When they are mixed), when the phosphor layer 2 is irradiated with blue light from the solid light source 5, illumination light such as white can be obtained as reflected light. In addition, when the solid light source 5 emits blue light, for example, when the phosphor layer 2 includes only a yellow phosphor, for example, the phosphor layer 2 is irradiated with blue light from the solid light source 5. When it does, illumination light, such as yellow or white, can be obtained as reflected light. In addition, when the solid light source 5 emits blue light, for example, when the phosphor layer 2 includes only a green phosphor, for example, the phosphor layer 2 is irradiated with blue light from the solid light source 5. When it does, illumination light, such as green or turquoise, can be obtained as reflected light.

また、本発明では、蛍光体層２には、シリコーン樹脂などの透明媒体中に蛍光体が分散されたものが用いられる。すなわち、蛍光体層２としては、上述の蛍光体粉末を樹脂やガラス中に分散させたものを用いることもでき、ガラス中に発光中心をドープしたものやセラミック蛍光体などを用いることも可能であるが、材料のコストが高いことや、加工性が低いことから、工業的には、シリコーン樹脂などの耐熱性の高い透明樹脂中に蛍光体を分散、塗布したものを用いる方が有利である。このことから、本発明では、蛍光体層２には、シリコーン樹脂などの透明媒体中に蛍光体が分散されたものを用いることを前提としている。   In the present invention, the phosphor layer 2 is made of a phosphor dispersed in a transparent medium such as a silicone resin. That is, as the phosphor layer 2, a material in which the above-described phosphor powder is dispersed in a resin or glass can be used, or a glass in which a light emission center is doped in glass or a ceramic phosphor can be used. However, since the cost of the material is high and the processability is low, it is industrially advantageous to use a product obtained by dispersing and applying a phosphor in a transparent resin having high heat resistance such as silicone resin. . Therefore, in the present invention, it is assumed that the phosphor layer 2 is a phosphor layer in which a phosphor is dispersed in a transparent medium such as a silicone resin.

また、基板６は、光（固体光源５からの励起光によって励起された蛍光体層２からの発光（蛍光）と、蛍光体層２で吸収されなかった固体光源５からの光）に対する反射面の役割と、蛍光体層２から放散してきた熱を外部へ放散させる役割と、蛍光体層２の支持基板の役割も担うものである。このため、高い光反射特性、伝熱特性、加工性が求められる。この基板６には、金属基板やアルミナなどの酸化物セラミックス、窒化アルミニウムなどの非酸化セラミックスなどが使用可能であるが、特に高い光反射特性、伝熱特性、加工性を併せ持つ金属基板が使用されるのが望ましい。   Further, the substrate 6 is a reflection surface for light (light emission (fluorescence) from the phosphor layer 2 excited by excitation light from the solid light source 5 and light from the solid light source 5 not absorbed by the phosphor layer 2). , The role of dissipating the heat dissipated from the phosphor layer 2 to the outside, and the role of the support substrate of the phosphor layer 2. For this reason, high light reflection characteristics, heat transfer characteristics, and workability are required. The substrate 6 can be a metal substrate, oxide ceramics such as alumina, or non-oxide ceramics such as aluminum nitride, but a metal substrate having particularly high light reflection characteristics, heat transfer characteristics, and workability is used. Is desirable.

ところで、蛍光体は、高密度エネルギー励起された場合には、吸収したエネルギーの一部を熱に変換する。蛍光体層２に使用される上述したような蛍光体は、低エネルギー密度の励起時には８０％以上の外部量子効率であり発熱も少なく急激な蛍光強度低下は無いが、連続的に高密度エネルギー励起された場合には、蛍光体層２の熱伝導が悪いときには、蛍光体の発熱が蓄積され蛍光体の量子効率を低下させ、更に発熱を引き起こし、蛍光強度が低下してしまう。このことから、蛍光強度の低下を防止するためには、蛍光体層２の熱伝導率（蛍光体層２全体の熱伝導）を高める必要がある。   By the way, when the phosphor is excited with high density energy, part of the absorbed energy is converted into heat. The above-described phosphor used for the phosphor layer 2 has an external quantum efficiency of 80% or more when excited at a low energy density, generates little heat, and does not rapidly decrease in fluorescence intensity. In this case, when the heat conduction of the phosphor layer 2 is poor, the heat generation of the phosphor is accumulated to reduce the quantum efficiency of the phosphor, further causing heat generation, and the fluorescence intensity is decreased. Therefore, in order to prevent a decrease in fluorescence intensity, it is necessary to increase the thermal conductivity of the phosphor layer 2 (thermal conduction of the entire phosphor layer 2).

蛍光体層２に、シリコーン樹脂などの透明媒体中に蛍光体が分散されたものを用いる場合に、蛍光体層２の熱伝導率は、蛍光体の透明媒体に対する配合比と蛍光体層２の厚さによって決定される。すなわち、蛍光体の熱伝導率は９〜１４（Ｗ／ｍ・Ｋ）であるのに対し、シリコーン樹脂の熱伝導率は０．１〜０．４（Ｗ／ｍ・Ｋ）と２桁程度低く、これらを混合して使用するときには、蛍光体濃度（蛍光体のシリコーン樹脂に対する配合比）や蛍光体層２の厚さによって、蛍光強度が大きく変化することになる。   When using a phosphor layer 2 in which a phosphor is dispersed in a transparent medium such as a silicone resin, the thermal conductivity of the phosphor layer 2 depends on the blending ratio of the phosphor to the transparent medium and the phosphor layer 2. Determined by thickness. That is, the thermal conductivity of the phosphor is 9 to 14 (W / m · K), whereas the thermal conductivity of the silicone resin is 0.1 to 0.4 (W / m · K), about two digits. When these are mixed and used, the fluorescence intensity greatly varies depending on the phosphor concentration (the blending ratio of the phosphor to the silicone resin) and the thickness of the phosphor layer 2.

すなわち、熱伝導率の低いシリコーン樹脂成分の配合比が少ないほど（蛍光体の配合比が多いほど）、蛍光体層２の熱伝導率、熱拡散率は高くなり、蛍光体層２の発熱による蛍光強度の低下を防止できると考えられる。   That is, the smaller the blending ratio of the silicone resin component having a low thermal conductivity (the greater the blending ratio of the phosphor), the higher the thermal conductivity and thermal diffusivity of the phosphor layer 2. It is considered that a decrease in fluorescence intensity can be prevented.

本願の発明者は、図１の構成の光源装置において、シリコーン樹脂中に蛍光体が分散されたものを蛍光体層２に用いる場合に、蛍光体濃度（蛍光体のシリコーン樹脂に対する配合比）、および、蛍光体層２の厚さが、蛍光強度、蛍光体層２の表面温度、蛍光体層２の熱拡散率にどのように影響するかを図２の蛍光強度測定系による測定によって調べた。   The inventor of the present application uses the phosphor layer (mixing ratio of the phosphor to the silicone resin) in the light source device having the configuration shown in FIG. Further, the influence of the thickness of the phosphor layer 2 on the fluorescence intensity, the surface temperature of the phosphor layer 2, and the thermal diffusivity of the phosphor layer 2 was examined by measurement using the fluorescence intensity measurement system of FIG. .

なお、図２の蛍光強度測定系は、作製した蛍光体層２（蛍光体部１２）を固定し、蛍光体層２の面に対して垂直な直線上の位置に主波長が４６０ｎｍの青色半導体レーザー５を配置し、蛍光体層２と青色半導体レーザー５との間に、蛍光体層２の表面に青色半導体レーザー５からの励起光を集光するレンズ２５と、蛍光体層２からの蛍光を反射するダイクロイックミラー２６とを配置し、ダイクロイックミラー２６からの反射光（すなわち、蛍光体層２からの蛍光）の強度をパワーメータ２７で測定するようになっている。   In the fluorescence intensity measurement system of FIG. 2, the produced phosphor layer 2 (phosphor portion 12) is fixed, and a blue semiconductor whose main wavelength is 460 nm at a position on a straight line perpendicular to the surface of the phosphor layer 2. A laser 5 is disposed, and between the phosphor layer 2 and the blue semiconductor laser 5, a lens 25 that collects excitation light from the blue semiconductor laser 5 on the surface of the phosphor layer 2, and fluorescence from the phosphor layer 2. And the intensity of the reflected light from the dichroic mirror 26 (that is, fluorescence from the phosphor layer 2) is measured by a power meter 27.

本願の発明者によるこの測定において、蛍光体層２の蛍光体にはＹ３（Ａｌ，Ｇａ）５Ｏ１２：Ｃｅ３＋を用いた。また、蛍光体層２上における青色半導体レーザー５からの励起光スポット径はφ２００μｍであり、励起エネルギーは７６８ｍＷであった。また、蛍光体層２発光時の蛍光体層２の表面の温度は、赤外線カメラ（ＦＬＩＲ ＳＹＳＴＥＭＳ社のＴｈｅｒｍａＣＡＭ ＳＣ６４０）で測定した。 In this measurement by the inventors of the present application, Y 3 (Al, Ga) 5 O 12 : Ce 3+ was used as the phosphor of the phosphor layer 2. The spot diameter of the excitation light from the blue semiconductor laser 5 on the phosphor layer 2 was φ200 μm, and the excitation energy was 768 mW. Moreover, the temperature of the surface of the fluorescent substance layer 2 at the time of fluorescent substance layer 2 light emission was measured with the infrared camera (ThermaCAM SC640 of FLIR SYSTEMS).

図３には、蛍光体層２の蛍光体濃度（蛍光体のシリコーン樹脂に対する配合比）を重量比でそれぞれ７５ｗｔ％、７８ｗｔ％、８０ｗｔ％、８２ｗｔ％としたときの、蛍光体層２の厚さ（μｍ）に対する蛍光強度（ｍＷ）、蛍光体層２の表面温度（℃）の測定結果が示されている。図４は、図３における蛍光体層２の厚さ（μｍ）に対する蛍光強度（ｍＷ）の測定結果をグラフに示した図である。また、図５は、図３における蛍光体層２の厚さ（μｍ）に対する蛍光体層２の表面温度（℃）の測定結果をグラフに示した図である。   FIG. 3 shows the thickness of the phosphor layer 2 when the phosphor concentration of the phosphor layer 2 (mixing ratio of the phosphor to the silicone resin) is 75 wt%, 78 wt%, 80 wt%, and 82 wt%, respectively. The measurement results of the fluorescence intensity (mW) with respect to the thickness (μm) and the surface temperature (° C.) of the phosphor layer 2 are shown. FIG. 4 is a graph showing the measurement result of the fluorescence intensity (mW) with respect to the thickness (μm) of the phosphor layer 2 in FIG. FIG. 5 is a graph showing measurement results of the surface temperature (° C.) of the phosphor layer 2 with respect to the thickness (μm) of the phosphor layer 2 in FIG.

図３、図４、図５の結果から、高密度エネルギー励起７６８ｍＷにおいて、蛍光体層２の厚さが１００μｍ以上になると、急激に蛍光体層２の表面温度が上昇し、蛍光強度が低下するのがわかる。そして、その変化の度合いは、蛍光体層２の蛍光体濃度が高い方が緩やかである。次に、蛍光体層２の厚さが１００μｍ以下の場合に着目すると、蛍光体層２の蛍光体濃度が高いときに（蛍光体濃度が８０ｗｔ％以上のときに）、蛍光強度が強く、蛍光体層表面温度が低くなる傾向が見られた。なお、蛍光体濃度が８２ｗｔ％以上の蛍光体層は作りづらく、従って、実用的な蛍光体濃度の上限は８２ｗｔ％である。また、蛍光体層２の厚さが７５μｍ以下の蛍光体層２は作りづらく、仮に作製できたとしても、厚さが薄い分、厚さ方向における蛍光体の量も少なくなり、蛍光強度が弱くなってしまう。   3, 4, and 5, when the thickness of the phosphor layer 2 becomes 100 μm or more in high-density energy excitation 768 mW, the surface temperature of the phosphor layer 2 rapidly increases and the fluorescence intensity decreases. I understand. The degree of change is more gradual when the phosphor concentration of the phosphor layer 2 is higher. Next, paying attention to the case where the thickness of the phosphor layer 2 is 100 μm or less, when the phosphor concentration of the phosphor layer 2 is high (when the phosphor concentration is 80 wt% or more), the fluorescence intensity is strong and the fluorescence There was a tendency for the body layer surface temperature to decrease. Note that it is difficult to form a phosphor layer having a phosphor concentration of 82 wt% or more. Therefore, the practical upper limit of the phosphor concentration is 82 wt%. In addition, it is difficult to manufacture the phosphor layer 2 having a thickness of 75 μm or less. Even if the phosphor layer 2 can be manufactured, the amount of the phosphor in the thickness direction is reduced because the thickness is small, and the fluorescence intensity is weak. turn into.

このことから、蛍光体層２の蛍光体濃度（蛍光体のシリコーン樹脂などの透明媒体に対する配合比）は重量比で８０ｗｔ％〜８２ｗｔ％の範囲であり、蛍光体層２の厚さは７５μｍ〜１００μｍの範囲であるのが好ましく、これが、蛍光体層２の蛍光体濃度と厚さの最適条件となることがわかった。なお、この最適条件は、蛍光体層２の蛍光体材料を変えた場合にも、同じであることが確かめられた。   From this, the phosphor concentration of the phosphor layer 2 (the blending ratio of the phosphor to the transparent medium such as silicone resin) is in the range of 80 wt% to 82 wt%, and the thickness of the phosphor layer 2 is 75 μm to The range of 100 μm is preferable, and it has been found that this is the optimum condition for the phosphor concentration and thickness of the phosphor layer 2. This optimum condition was confirmed to be the same even when the phosphor material of the phosphor layer 2 was changed.

また、本願の発明者は、蛍光体層２の蛍光体濃度（蛍光体のシリコーン樹脂に対する配合比）と蛍光体層２の厚さの違いによる蛍光体層２の熱拡散率（熱伝導率）の関係を、アルバック社製の周期加熱法熱拡散率測定装置（ＦＴＣ−１）で測定した。図６には、加熱温度が１５０℃における蛍光体層２の熱拡散率の測定結果が示されている。図６の結果から、蛍光体層２の熱拡散率は、蛍光体層２の厚さが１００μｍ以上では、蛍光体層２の蛍光体濃度（蛍光体のシリコーン樹脂に対する配合比）に依存することが強いことがわかった。また、蛍光体層２の熱拡散率を０．２６（×１０−６ｍ２Ｓ−１）以上の値にすることにより、蛍光強度、蛍光体層２の表面温度に大きな違いが見られないことが本願の発明者により見出された。 Further, the inventor of the present application provides the thermal diffusivity (thermal conductivity) of the phosphor layer 2 due to the difference in the phosphor concentration of the phosphor layer 2 (mixing ratio of the phosphor to the silicone resin) and the thickness of the phosphor layer 2. Was measured with a periodic heating method thermal diffusivity measuring apparatus (FTC-1) manufactured by ULVAC. FIG. 6 shows the measurement result of the thermal diffusivity of the phosphor layer 2 when the heating temperature is 150 ° C. From the results of FIG. 6, the thermal diffusivity of the phosphor layer 2 depends on the phosphor concentration of the phosphor layer 2 (mixing ratio of the phosphor to the silicone resin) when the thickness of the phosphor layer 2 is 100 μm or more. Was found to be strong. Moreover, when the thermal diffusivity of the phosphor layer 2 is set to a value of 0.26 (× 10 −6 m 2 S −1 ) or more, there is no significant difference in the fluorescence intensity and the surface temperature of the phosphor layer 2. Has been found by the inventors of the present application.

このことから、蛍光体層２は、熱拡散率が０．２６（×１０−６ｍ２Ｓ−１）以上であるのが好ましい。 From this, it is preferable that the phosphor layer 2 has a thermal diffusivity of 0.26 (× 10 −6 m 2 S −1 ) or more.

以上のことから、高密度エネルギー励起の場合における、蛍光体層２の蛍光体濃度の最適条件は、蛍光体のシリコーン樹脂に対する配合比が重量比で８０ｗｔ％〜８２ｗｔ％の範囲であり、蛍光体層２の厚さの最適条件は、７５μｍ〜１００μｍの範囲であり、更にその際の蛍光体層２の熱拡散率は０．２６（×１０−６ｍ２Ｓ−１）以上が好ましい。 From the above, the optimum condition of the phosphor concentration of the phosphor layer 2 in the case of high-density energy excitation is such that the blending ratio of the phosphor to the silicone resin is in the range of 80 wt% to 82 wt%. The optimum condition for the thickness of the layer 2 is in the range of 75 μm to 100 μm, and the thermal diffusivity of the phosphor layer 2 at that time is preferably 0.26 (× 10 −6 m 2 S −1 ) or more.

なお、図１の構成例では、固体光源５からの励起光を蛍光体層２に直接入射させているが、図７に示すように固体光源５と蛍光体層２との間に反射手段（例えばミラー）１６を設け、反射手段１６の向き（角度）を制御することで、固体光源５からの励起光の蛍光体層２への入射位置を精密に制御することもできる。   In the configuration example of FIG. 1, the excitation light from the solid light source 5 is directly incident on the phosphor layer 2, but reflection means (between the solid light source 5 and the phosphor layer 2, as shown in FIG. 7. For example, by providing the mirror 16 and controlling the direction (angle) of the reflecting means 16, the incident position of the excitation light from the solid light source 5 on the phosphor layer 2 can be precisely controlled.

また、図１、図７のように蛍光体層２を固定して使用する場合には、蛍光体層２を冷却効率の高い基板６上に接着し、蛍光体層２からの発熱を基板６の背面から放熱することで、蛍光体層２の発熱による蛍光強度の低下を防止することが出来る。このため、基板６には、特に、冷却効率の高い金属基板を使用するのが望ましい。金属としては、Ａｌ、Ｃｕ、Ｔｉ、Ｓｉ、Ａｇ、Ａｕ、Ｎｉ、Ｍｏ、Ｗ、Ｆｅ、Ｐｄなどの単体や、それらを含む合金が使用可能である。また、基板６の表面に増反射や腐食防止を目的としたコーティングを施しても良い。また、蛍光体層２すなわち蛍光体は、励起光を蛍光に変換する場合に発熱し、蛍光体は周囲温度が上昇すると、励起光から蛍光への変換効率が低下する温度消光という特性を持っている。従って、蛍光への変換効率低下を防ぐには、より積極的に蛍光体層２すなわち蛍光体を冷却する必要があり、このため、蛍光体層２の背面に冷却機構が設けられるのが良い。具体的に、冷却機構として、図８、図９に示すように基板６の背面に放熱フィン１０を設けても良いし、ファン等を用いて空冷しても良いし、ペルチェ素子の様な熱電素子を用いて冷却しても良い。このように、冷却機構を設けて基板６の放熱性を高め、蛍光体層２からの発熱を背面から放熱することで蛍光体層２の変換効率低下を防止することができる。すなわち、高輝度化を図ることができる。   When the phosphor layer 2 is used in a fixed state as shown in FIGS. 1 and 7, the phosphor layer 2 is bonded onto the substrate 6 having high cooling efficiency, and the heat generated from the phosphor layer 2 is transferred to the substrate 6. By radiating heat from the back surface of the phosphor layer, it is possible to prevent a decrease in fluorescence intensity due to heat generation of the phosphor layer 2. For this reason, it is desirable to use a metal substrate with high cooling efficiency as the substrate 6. As the metal, simple substances such as Al, Cu, Ti, Si, Ag, Au, Ni, Mo, W, Fe, Pd, and alloys containing them can be used. Further, the surface of the substrate 6 may be coated for the purpose of preventing reflection and corrosion. Further, the phosphor layer 2, that is, the phosphor generates heat when the excitation light is converted into fluorescence, and the phosphor has a characteristic of temperature quenching in which the conversion efficiency from the excitation light to the fluorescence decreases as the ambient temperature rises. Yes. Therefore, in order to prevent a decrease in the conversion efficiency to fluorescence, it is necessary to more actively cool the phosphor layer 2, that is, the phosphor. For this reason, a cooling mechanism is preferably provided on the back surface of the phosphor layer 2. Specifically, as the cooling mechanism, as shown in FIGS. 8 and 9, heat radiation fins 10 may be provided on the back surface of the substrate 6, air cooling may be performed using a fan or the like, or a thermoelectric device such as a Peltier element may be used. You may cool using an element. As described above, the cooling mechanism is provided to improve the heat dissipation of the substrate 6, and the heat generation from the phosphor layer 2 is radiated from the back surface, thereby preventing the conversion efficiency of the phosphor layer 2 from being lowered. That is, high luminance can be achieved.

また、図１、図７、図８、図９の光源装置では、蛍光体層２は、固定されたものとなっているが、蛍光体層２を移動可能に構成することもできる。例えば、図１０、図１１に示すように（図１０、図１１は、それぞれ、図１、図７に対応した図であり、図１、図７と同様の箇所には同じ符号を付し、説明を省略する）、蛍光体層２を回転軸Ｘの周りに回転させる（モーター等の回転駆動源によって回転させる）反射型蛍光回転体１として構成することもできる。すなわち、反射型蛍光回転体１は、蛍光体層２と基板６を接合したものをモーター等の回転駆動源と連結することで実現できる。また、この反射型蛍光回転体１において、基板６や、蛍光体層２と基板６との接合部が、励起光および蛍光の反射面として機能している。なお、基板６の形状は、円盤状や四角形などが考えられる。また回転の安定性を確保するために、円盤の一部を切り欠いたり、逆におもりをつけた形状とすることも可能である。   1, 7, 8, and 9, the phosphor layer 2 is fixed. However, the phosphor layer 2 can be configured to be movable. For example, as shown in FIG. 10 and FIG. 11 (FIG. 10 and FIG. 11 are diagrams corresponding to FIG. 1 and FIG. 7, respectively, and the same reference numerals are given to the same portions as FIG. 1 and FIG. The description may be omitted), and the phosphor layer 2 may be configured as a reflection type fluorescent rotator 1 that is rotated around a rotation axis X (rotated by a rotational drive source such as a motor). That is, the reflection type fluorescent rotator 1 can be realized by connecting the phosphor layer 2 and the substrate 6 joined to a rotational drive source such as a motor. Further, in the reflection type fluorescent rotating body 1, the substrate 6 and the junction between the phosphor layer 2 and the substrate 6 function as a reflection surface of excitation light and fluorescence. In addition, the shape of the board | substrate 6 can consider disk shape, a square shape, etc. In addition, in order to ensure the stability of rotation, it is possible to cut out a part of the disk or to have a shape with a weight on the contrary.

このように、蛍光体層２を回転軸Ｘの周りに回転させる（モーター等によって回転させる）反射型蛍光回転体１として構成することにより、すなわち、固体光源５に対して蛍光体層２を回転させることにより、固体光源５からの励起光が当たる場所を分散させ、光照射部での発熱を抑えることができ（この蛍光回転体１を用いることで、そもそも蛍光体の発熱を抑えることができ）、これにより、より一層の高輝度化が可能となる。   In this way, the phosphor layer 2 is rotated around the rotation axis X (rotated by a motor or the like) as the reflection-type fluorescence rotator 1, that is, the phosphor layer 2 is rotated with respect to the solid light source 5. As a result, it is possible to disperse the places where the excitation light from the solid-state light source 5 hits, and to suppress the heat generation in the light irradiation section (using this fluorescent rotating body 1 can suppress the heat generation of the phosphor in the first place). This makes it possible to further increase the brightness.

なお、図１０、図１１の例では、反射型蛍光回転体１の蛍光体層２としては、１種類の蛍光体層だけが用いられているが、例えば図１２に示すように複数の蛍光体層（図１２の例では、２種類の蛍光体層２ａ，２ｂ）を用いることもできる。すなわち、図１０、図１１の例のように蛍光体層２として１種類の蛍光体層だけが用いられている場合、この１種類の蛍光体層内に長波長蛍光体と短波長蛍光体とを混ぜ合わせて用いると、長波長蛍光体が短波長蛍光体の発光を再吸収してしまい、変換効率が低下することがある。これに対し、図１２の例のように２種類の蛍光体層２ａ，２ｂを用いる場合には、蛍光体層２ａを長波長蛍光体のものにし、蛍光体層２ｂを短波長蛍光体のものにするというように、長波長蛍光体と短波長蛍光体とを別々の領域に配置することで、長波長蛍光体が短波長蛍光体の発光を再吸収することを防止して、変換効率の低下を抑制することができる。   In the examples of FIGS. 10 and 11, only one type of phosphor layer is used as the phosphor layer 2 of the reflection type fluorescent rotator 1. For example, as shown in FIG. Layers (two types of phosphor layers 2a and 2b in the example of FIG. 12) can also be used. That is, when only one type of phosphor layer is used as the phosphor layer 2 as in the examples of FIGS. 10 and 11, a long wavelength phosphor and a short wavelength phosphor are included in the one type of phosphor layer. When used in combination, the long wavelength phosphor reabsorbs the light emitted from the short wavelength phosphor, which may reduce the conversion efficiency. In contrast, when two types of phosphor layers 2a and 2b are used as in the example of FIG. 12, the phosphor layer 2a is made of a long wavelength phosphor, and the phosphor layer 2b is made of a short wavelength phosphor. By arranging the long-wavelength phosphor and the short-wavelength phosphor in separate areas, the long-wavelength phosphor is prevented from reabsorbing the light emitted from the short-wavelength phosphor, and the conversion efficiency is improved. The decrease can be suppressed.

また、上述の各例において、上記光源装置と光学系（レンズ系）２０とを組み合わせることで（上記光源装置からの出射光を光学系（レンズ系）２０に通して照明光とすることで）、照明装置を構成することができる。   In each of the above-described examples, the light source device and the optical system (lens system) 20 are combined (by emitting light from the light source device through the optical system (lens system) 20 as illumination light). A lighting device can be configured.

また、上述の各例の光源装置および照明装置では、基板６に光反射性のものを用い、蛍光体層２の面のうち固体光源５からの励起光が入射する側の面とは反対側に設けられた反射面による反射を用いて蛍光などの光を取り出す方式（反射方式）の光源装置および照明装置として説明したが、本発明は、蛍光体層２の面のうち固体光源５からの励起光が入射する側の面とは反対側に設けられた面から透過する蛍光などの光を取り出す方式（透過方式）の光源装置および照明装置にも、同様に適用できる。   Moreover, in the light source device and the illuminating device of each example described above, a light reflective material is used for the substrate 6, and the surface of the phosphor layer 2 opposite to the surface on which the excitation light from the solid light source 5 is incident. Although the light source device and the illumination device of a method (reflection method) for extracting light such as fluorescence using reflection by a reflection surface provided on the light source have been described, the present invention can be applied to the surface of the phosphor layer 2 from the solid light source 5. The present invention can be similarly applied to a light source device and an illuminating device that take out light such as fluorescent light that is transmitted from a surface provided on the side opposite to the surface on which excitation light is incident (transmission method).

本発明は、自動車用照明装置、プロジェクター、一般照明などに利用可能である。   The present invention can be used for an automobile lighting device, a projector, general lighting, and the like.

１ 蛍光回転体
２ 蛍光体層
５ 固体光源
６ 基板
１６ 反射手段
２０ 光学系（レンズ系） DESCRIPTION OF SYMBOLS 1 Fluorescent rotating body 2 Fluorescent substance layer 5 Solid light source 6 Substrate 16 Reflecting means 20 Optical system (lens system)

Claims (3)

紫外光から緑色光までの波長領域のうちの所定の波長の光を発光する半導体レーザー光源と、
前記半導体レーザー光源からの励起光により励起され前記半導体レーザー光源の発光波長より長波長の蛍光を発光する蛍光体層および前記蛍光体層を表面に設けた基板を有する蛍光体部とを備え、
前記基板は、前記蛍光体層の前記励起光が入射する側の面とは反対の面側に設けられた金属材料もしくはセラミックス材料からなり、
前記蛍光体層は、透明樹脂媒体中に前記透明樹脂よりも熱伝導率の高い蛍光体が分散され、厚さが７５μｍ〜１００μｍの範囲であり、
前記蛍光体層における蛍光体の透明樹脂媒体に対する配合比は重量比で８０ｗｔ％〜８２ｗｔ％の範囲であり、
前記蛍光体層は、熱拡散率が０．２６（×１０−６ｍ２Ｓ−１）以上であり、
前記蛍光体層と前記基板表面が接着され、
前記半導体レーザー光源からの励起光が、前記蛍光体層の表面側から入射し、
前記基板の前記蛍光体層を接着した表面は、前記半導体レーザー光源からの励起光および前記蛍光体層からの蛍光を反射する反射面であることを特徴とする光源装置。
A semiconductor laser light source that emits light of a predetermined wavelength in a wavelength region from ultraviolet light to green light;
A phosphor layer that is excited by excitation light from the semiconductor laser light source and emits fluorescence having a wavelength longer than the emission wavelength of the semiconductor laser light source, and a phosphor part having a substrate provided with the phosphor layer on the surface;
The substrate is pre-SL of a metal material or ceramic material provided on the opposite side of said side surface on which the excitation light enters the phosphor layer,
The phosphor layer has a thickness of 75 μm to 100 μm in which a phosphor having a higher thermal conductivity than the transparent resin is dispersed in a transparent resin medium,
The blending ratio of the phosphor to the transparent resin medium in the phosphor layer is in the range of 80 wt% to 82 wt% by weight ratio,
The phosphor layer has a thermal diffusivity of 0.26 (× 10 −6 m 2 S −1 ) or more,
The phosphor layer and the substrate surface are bonded,
Excitation light from the semiconductor laser light source is incident from the surface side of the phosphor layer,
The surface of the substrate to which the phosphor layer is bonded is a reflecting surface that reflects excitation light from the semiconductor laser light source and fluorescence from the phosphor layer.
請求項１に記載の光源装置が、さらに回転駆動源を備えており、
前記回転駆動源が、前記蛍光体層を回転軸の周りに回転させ、前記半導体レーザーが前記蛍光体層を照射する位置を分散することを特徴とする光源装置。 The light source device according to claim 1 further includes a rotational drive source,
The light source device , wherein the rotation driving source rotates the phosphor layer around a rotation axis, and disperses positions where the semiconductor laser irradiates the phosphor layer . 請求項１または請求項２に記載の光源装置と、前記光源装置からの出射光を制御する光学系とを備えたことを特徴とする照明装置。 An illumination device comprising: the light source device according to claim 1; and an optical system that controls light emitted from the light source device.
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