JP5667136B2 - 窒化物系化合物半導体素子およびその製造方法 - Google Patents
窒化物系化合物半導体素子およびその製造方法 Download PDFInfo
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- JP5667136B2 JP5667136B2 JP2012210942A JP2012210942A JP5667136B2 JP 5667136 B2 JP5667136 B2 JP 5667136B2 JP 2012210942 A JP2012210942 A JP 2012210942A JP 2012210942 A JP2012210942 A JP 2012210942A JP 5667136 B2 JP5667136 B2 JP 5667136B2
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- 239000004065 semiconductor Substances 0.000 title claims description 66
- 150000004767 nitrides Chemical class 0.000 title claims description 24
- 150000001875 compounds Chemical class 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 60
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 59
- 239000001301 oxygen Substances 0.000 claims description 59
- 239000002131 composite material Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 24
- -1 nitride compound Chemical class 0.000 claims description 23
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 15
- 239000007789 gas Substances 0.000 claims description 14
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 7
- 229910001882 dioxygen Inorganic materials 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 4
- 230000004888 barrier function Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims 1
- 239000010410 layer Substances 0.000 description 200
- 230000005684 electric field Effects 0.000 description 21
- 238000005259 measurement Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 239000000203 mixture Substances 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 230000007774 longterm Effects 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
- H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
Description
図1は、本発明の実施の形態1に係る窒化物系化合物半導体素子であるショットキーバリアダイオード(Schottky Barrier Diode:SBD)の模式的な断面図である。図2は、図1に示すSBDの上面図である。
図10は、本発明の実施の形態2に係る窒化物系化合物半導体素子であるSBDの模式的な断面図である。図11は、図10に示すSBDのバッファ層80の構成を説明する図である。
20 介在層
30、80 バッファ層
31、32、33、34、35、36、81 複合層
31a、32a、33a、34a、35a、36a、81a 第1層
31b、32b、33b、34b、35b、36b、81b 第2層
40 電子走行層
50 電子供給層
60 アノード電極
70 カソード電極
P1、P2、P3 プローブ針
T1、T2、T3 時間
Claims (7)
- 基板と、
前記基板上に形成され、窒化物系化合物半導体からなる第1層と、前記第1層よりも格子定数が小さく、アルミニウムを含む窒化物系化合物半導体からなる第2層とが積層された複合層を複数層含むバッファ層と、
前記バッファ層上に形成された半導体動作層と、
前記半導体動作層上に形成された複数の電極と、
を備え、前記第2層の少なくとも一つは、濃度が1×10 19 cm -3 以上1×10 20 cm -3 より小さい範囲で酸素が添加されることにより、酸窒化アルミニウムの形成により前記第2層が高抵抗化され、かつ、アルミニウムサイトに前記酸素が置換したO Al のアクセプタ準位が発生して前記第2層と前記第1層との界面に発生する2次元電子ガスが補償されていることを特徴とする窒化物系化合物半導体素子。 - 前記第1層はGaNからなり、前記第2層はAlNからなることを特徴とする請求項1に記載の窒化物系化合物半導体素子。
- 少なくとも前記電極間に電圧を印加したときに最も高い電圧が掛かる前記複合層の第2層には酸素が添加されていることを特徴とする請求項1または請求項2に記載の窒化物系化合物半導体素子。
- 前記2次元電子ガスが発生している複合層のうち最も前記半導体動作層に近い位置にある前記複合層の第2層には酸素が添加されていることを特徴とする請求項1〜3のいずれか一つに記載の窒化物系化合物半導体素子。
- 電界効果トランジスタまたはショットキーバリアダイオードであることを特徴とする請求項1〜4のいずれか一つに記載の窒化物系化合物半導体素子。
- 基板上に、窒化物系化合物半導体からなる第1層と前記第1層よりも格子定数が小さく、アルミニウムを含む窒化物系化合物半導体からなる第2層とが積層された複合層を複数層含むバッファ層を形成する工程と、
前記バッファ層上に半導体動作層を形成する工程と、
前記半導体動作層上に複数の電極を形成する工程と、を含み、
前記バッファ層を形成する工程は、前記第2層の少なくとも1層に濃度が1×10 19 cm -3 以上1×10 20 cm -3 より小さい範囲で酸素を添加することにより、酸窒化アルミニウムの形成により前記第2層を高抵抗化し、かつ、アルミニウムサイトに前記酸素が置換したO Al のアクセプタ準位を発生させて前記第2層と前記第1層との界面に発生する2次元電子ガスを補償する工程を含むことを特徴とする窒化物系化合物半導体素子の製造方法。 - 前記バッファ層を形成する工程は、MOCVD法により前記第1層と前記第2層を形成し、該MOCVD法にてエピタキシャル成長させる際に用いる原料ガスに、酸素ガスおよび酸素を含むガスの少なくとも一方を混合することによって、前記第2層の少なくとも1層に酸素を添加する工程を含むことを特徴とする請求項6に記載の窒化物系化合物半導体素子の製造方法。
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JP2012210942A JP5667136B2 (ja) | 2012-09-25 | 2012-09-25 | 窒化物系化合物半導体素子およびその製造方法 |
US13/938,653 US8884393B2 (en) | 2012-09-25 | 2013-07-10 | Nitride compound semiconductor device and manufacturing method thereof |
CN201310288724.6A CN103681832A (zh) | 2012-09-25 | 2013-07-10 | 氮化物系化合物半导体元件及其制造方法 |
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JP2016100471A (ja) * | 2014-11-21 | 2016-05-30 | 住友電気工業株式会社 | 半導体装置及び半導体装置の製造方法 |
CN105336579B (zh) * | 2015-09-29 | 2018-07-10 | 安徽三安光电有限公司 | 一种半导体元件及其制备方法 |
CN108428619A (zh) * | 2018-03-16 | 2018-08-21 | 英诺赛科(珠海)科技有限公司 | 氮化物外延层及其制备方法 |
JP2021027296A (ja) * | 2019-08-08 | 2021-02-22 | 住友化学株式会社 | 窒化物半導体基板 |
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CN103681832A (zh) | 2014-03-26 |
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US8884393B2 (en) | 2014-11-11 |
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