JP5663030B2 - 太陽電池及びその製造方法 - Google Patents
太陽電池及びその製造方法 Download PDFInfo
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- JP5663030B2 JP5663030B2 JP2012536683A JP2012536683A JP5663030B2 JP 5663030 B2 JP5663030 B2 JP 5663030B2 JP 2012536683 A JP2012536683 A JP 2012536683A JP 2012536683 A JP2012536683 A JP 2012536683A JP 5663030 B2 JP5663030 B2 JP 5663030B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 27
- 239000000758 substrate Substances 0.000 claims description 103
- 230000031700 light absorption Effects 0.000 claims description 41
- 238000000034 method Methods 0.000 claims description 20
- 229920005989 resin Polymers 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 14
- 239000004593 Epoxy Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 229920000877 Melamine resin Polymers 0.000 claims description 5
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 claims description 5
- JDSHMPZPIAZGSV-UHFFFAOYSA-N melamine Chemical compound NC1=NC(N)=NC(N)=N1 JDSHMPZPIAZGSV-UHFFFAOYSA-N 0.000 claims description 5
- 229920002803 thermoplastic polyurethane Polymers 0.000 claims description 5
- 238000003848 UV Light-Curing Methods 0.000 claims description 2
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000000465 moulding Methods 0.000 claims description 2
- 229920000178 Acrylic resin Polymers 0.000 claims 2
- 230000000737 periodic effect Effects 0.000 claims 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 15
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000011787 zinc oxide Substances 0.000 description 8
- 238000000926 separation method Methods 0.000 description 7
- 239000010949 copper Substances 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- 229910052733 gallium Inorganic materials 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000003139 buffering effect Effects 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 229910052711 selenium Inorganic materials 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229920000307 polymer substrate Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 238000010297 mechanical methods and process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical compound [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 238000005546 reactive sputtering Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Description
この時、前記後面電極201は、前記凹凸パターン150の前記溝110内部にも挿入されて、前記後面電極201と基板100との結合力が増大されることができる。
(c)=X(d)・・・(2)
(d)=Y(e)・・・(3)
(f)=Z(g)・・・(4)
ここで、Wは0.17〜0.43、Xは0.03〜0.15、Yは0.04〜0.12、Zは1〜2の値を有する。
110 溝
120 突起
150 凹凸パターン
170 パターン層
200 後面電極
300 光吸収層
400 バッファ層
500 前面電極
Claims (18)
- 上面がフラットな基板上に配置されたパターン層と、
前記パターン層上に配置された後面電極と、
前記後面電極及びパターン層上に配置された光吸収層と、
前記光吸収層上に配置されたバッファ層と、
前記バッファ層上に配置された前面電極とを含み、
前記パターン層は凹凸パターンを含み、
前記後面電極が前記パターン層と接する面は、前記パターン層の凹凸パターンに対応する凹凸を有するように形成されて、前記後面電極の上面は前記基板と平行に形成され、
前記光吸収層が前記パターン層と接する面は、前記パターン層の凹凸パターンに対応する凹凸を有するように形成されて、前記光吸収層の上面は前記基板と平行に形成されることを特徴とする太陽電池。 - 前記凹凸パターンは、溝と突起が周期的に形成されたことを含むことを特徴とする請求項1に記載の太陽電池。
- 前記溝の幅は100〜300nmであり、前記突起の幅は100〜200nmであり、
前記溝と突起の高さは100〜300nmであり、
前記溝と突起を含む前記凹凸パターンの周期は、200〜500nmであることを含むことを特徴とする請求項2に記載の太陽電池。 - 前記基板、パターン層、後面電極に対して、
aは前記凹凸パターンの上面である前記突起の上面から前記後面電極の表面までの距離、bは前記溝の高さ、cは前記突起の高さ、dは前記パターン層で前記溝の底面から前記基板までの厚さであるとする時、
(a+b)=W(c+d)
の条件式を満足し、ここで、Wは0.17〜0.43の値を有することを特徴とする請求項2に記載の太陽電池。 - 前記パターン層に対して、
cは、前記突起の高さ、dは前記パターン層で前記溝の底面から前記基板までの厚さであるとする時、
(c)=X(d)
の条件式を満足し、ここで、Xは0.03〜0.15の値を有することを特徴とする請求項2に記載の太陽電池。 - 前記基板とパターン層に対して、
dは前記パターン層で前記溝の底面から前記基板までの厚さ、eは前記基板の厚さであるとする時、
(d)=Y(e)
の条件式を満足し、ここで、Yは0.04〜0.12の値を有することを特徴とする請求項2に記載の太陽電池。 - 前記パターン層に対して、
fは前記溝の幅、gは前記突起の幅とする時、
(f)=Z(g)
の条件式を満足し、ここで、Zは1〜2の値を有することを特徴とする請求項2に記載の太陽電池。 - 前記パターン層はエポキシ、エポキシメラミン、アクリル、ウレタン樹脂などの単独または混合物形態のレジン(resin)を含む物質で形成されたことを含むことを特徴とする請求項1に記載の太陽電池。
- 前記凹凸パターンは基板から後面電極に向けて幅が細くなるように形成されることを特徴とする請求項1に記載の太陽電池。
- 上面がフラットな基板上に凹凸パターンを含むパターン層を形成する段階と、
前記パターン層上に後面電極を形成する段階と、
前記後面電極及びパターン層上に光吸収層を形成する段階と、
前記光吸収層上にバッファ層を形成する段階と、
前記バッファ層上に前面電極を形成する段階とを含み、
前記後面電極が前記パターン層と接する面は、前記パターン層の凹凸パターンに対応する凹凸を有するように形成されて、前記後面電極の上面は前記基板と平行に形成され、
前記光吸収層が前記パターン層と接する面は、前記パターン層の凹凸パターンに対応する凹凸を有するように形成されて、前記光吸収層の上面は前記基板と平行に形成される太陽電池の製造方法。 - 前記パターン層を形成する段階は、
前記基板上に樹脂層を形成する段階と、
前記樹脂層に金型を利用したモールディング(molding)工程を進行しながら、UV硬化工程を同時に進行して、凹凸パターンが形成されたパターン層を形成する段階と、を含むことを特徴とする請求項10に記載の太陽電池の製造方法。 - 前記樹脂層はエポキシ、エポキシメラミン、アクリル、ウレタン樹脂などの単独または混合物形態のレジン(resin)を含む物質で形成されたことを含むことを特徴とする請求項11に記載の太陽電池の製造方法。
- 前記凹凸パターンは溝と突起が周期的に形成されたことを含むことを特徴とする請求項10に記載の太陽電池の製造方法。
- 前記溝の幅は100〜300nmであり、前記突起の幅は100〜200nmであり、
前記溝と突起の高さは100〜300nmであり、
前記溝と突起を含む前記凹凸パターンの周期は200〜500nmであることを含むことを特徴とする請求項13に記載の太陽電池の製造方法。 - 前記基板、パターン層、後面電極に対して、
aは前記凹凸パターンの上面である前記突起の上面から前記後面電極の表面までの距離、bは前記溝の高さ、cは前記突起の高さ、dは前記パターン層で前記溝の底面から前記基板までの厚さであるとする時、
(a+b)=W(c+d)
の条件式を満足し、ここでWは0.17〜0.43の値を有することを特徴とする請求項13に記載の太陽電池の製造方法。 - 前記パターン層に対して、
cは前記突起の高さ、dは前記パターン層で前記溝の底面から前記基板までの厚さであるとする時、
(c)=X(d)
の条件式を満足し、ここでXは0.03〜0.15の値を有することを特徴とする請求項13に記載の太陽電池の製造方法。 - 前記基板とパターン層に対して、
dは前記パターン層で前記溝の底面から前記基板までの厚さ、eは前記基板の厚さであるとする時、
(d)=Y(e)
の条件式を満足し、ここでYは0.04〜0.12の値を有することを特徴とする請求項13に記載の太陽電池の製造方法。 - 前記パターン層に対して、
fは前記溝の幅、gは前記突起の幅とする時、
(f)=Z(g)
の条件式を満足し、ここでZは1〜2の値を有することを特徴とする請求項13に記載の太陽電池の製造方法。
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