JP5654577B2 - ハーフトーンマスク及びその製造方法 - Google Patents
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- JP5654577B2 JP5654577B2 JP2012512963A JP2012512963A JP5654577B2 JP 5654577 B2 JP5654577 B2 JP 5654577B2 JP 2012512963 A JP2012512963 A JP 2012512963A JP 2012512963 A JP2012512963 A JP 2012512963A JP 5654577 B2 JP5654577 B2 JP 5654577B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 239000000463 material Substances 0.000 claims description 106
- 230000000903 blocking effect Effects 0.000 claims description 60
- 239000000758 substrate Substances 0.000 claims description 44
- 229920002120 photoresistant polymer Polymers 0.000 claims description 34
- 238000002834 transmittance Methods 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 239000000126 substance Substances 0.000 claims description 13
- 229910052715 tantalum Inorganic materials 0.000 claims description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 239000012780 transparent material Substances 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 5
- 229910052729 chemical element Inorganic materials 0.000 claims description 5
- 238000010030 laminating Methods 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 229910052726 zirconium Inorganic materials 0.000 claims description 3
- 239000012466 permeate Substances 0.000 claims 1
- 238000000034 method Methods 0.000 description 18
- 239000004973 liquid crystal related substance Substances 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 238000005530 etching Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0332—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their composition, e.g. multilayer masks, materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Liquid Crystal (AREA)
Description
例えば、3個以上の互いに異なる透過率を有する多重透過部を具現するには、互いに異なる透過率を有する3個の半透物質が必要とされる。すなわち、3個以上の多重半透過部を有するハーフトーンマスクを形成するためには、それに対応して半透過物質の数も増加させなければならないという問題点があった。
そして、前記半透過領域は、前記基板上に半透過物質が形成されて、光をX%透過させる第1半透過部と、前記半透過物質よりも厚く形成されて、光をY%透過させる第2半透過部と、前記半透過物質が2層で積層されて、光をZ%透過させる第3半透過部と、を含むことを特徴とする。
110 遮断層
112 第1半透過物質
114 第2半透過物質
120 フォトレジスト
Claims (6)
- 基板と、
前記基板上に形成され、照射される所定波長帯の光を透過させる透過領域と、
一つの半透過物質を使用し、前記半透過物質の厚さまたは積層数によって、前記基板上に照射される所定波長帯の光を多数個の互いに異なる透過率で透過させる多重半透過部を有する半透過領域と、を含み、
前記半透過領域は、
前記基板上に半透過物質が形成されて、光をX%透過させる第1半透過部と、
前記半透過物質よりも厚く形成されて、光をY%透過させる第2半透過部と、
前記半透過物質が2層で積層されて、光をZ%透過させる第3半透過部と、を含み、
前記第3半透過部は、前記半透過物質の2層が直接接触することを特徴とするハーフトーンマスク。 - 前記一つの半透過物質を積層し、積層した半透過物質の間に形成された遮断層を有する遮断領域をさらに含むことを特徴とする、請求項1に記載のハーフトーンマスク。
- 前記半透過物質の上部または下部に形成された遮断層を有する遮断領域をさらに含むことを特徴とする、請求項1に記載のハーフトーンマスク。
- 前記半透過物質は、Cr、Si、Mo、Ta、Ti、Al、Zr、Sn、Zn、In、Mg、Hf、V、Nd、Ge、MgO−Al2O3、Si3N4のいずれかの単一物質、これらのうち少なくとも2つが混合された複合物質、または、前記単一物質または複合物質に、COx、Ox、Nx、Cx、Fx、Bxの少なくとも1つが添加された物質であることを特徴とし、下付き文字xは自然数で、各化学元素の個数を表す、請求項1に記載のハーフトーンマスク。
- 基板上に第1半透過物質、遮断層、フォトレジストを積層した後、前記遮断層の必要領域が露出されるように前記フォトレジストを露光及び現像し、前記露出された遮断層、第1半透過物質を順に除去する段階と、
前記第1半透過物質及び遮断層の形成された基板上にフォトレジストを積層した後、前記遮断層の必要領域が露出されるように前記フォトレジストを露光及び現像して、前記露出された遮断層を除去する段階と、
前記露出された遮断層を除去した後、第2半透過物質、フォトレジストを順に積層して、前記第1及び第2半透過物質の間に遮断層が形成された遮断領域を形成する段階と、
前記第2半透過物質の必要領域が露出されるように前記フォトレジストを露光及び現像し、前記露出された第2半透過物質、遮断層を順に除去する段階と、
前記基板上に第1半透過物質が形成された第1半透過部と、前記基板上に第2半透過物質が形成された第2半透過部と、前記第1及び第2半透過物質が積層された第3半透過部を含む半透過領域を形成する段階と、を含み、
前記第1半透過物質及び第2半透過物質は、同じ半透過物質で形成し、前記第1半透過物質及び第2半透過物質は、互いに異なる厚さを有するように形成し、前記第3透過部で前記第1半透過物質と第2半透過物質が直接接触することを特徴とするハーフトーンマスクの製造方法。 - 前記半透過物質は、Cr、Si、Mo、Ta、Ti、Al、Zr、Sn、Zn、In、Mg、Hf、V、Nd、Ge、MgO−Al2O3、Si3N4のいずれかの単一物質、これらのうち少なくとも2つが混合された複合物質、または、前記単一物質または複合物質に、COx、Ox、Nx、Cx、Fx、Bxの少なくとも1つが添加された物質であることを特徴とし、下付き文字xは自然数で、各化学元素の個数を表す、請求項5に記載のハーフトーンマスクの製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020090045847A KR101095539B1 (ko) | 2009-05-26 | 2009-05-26 | 하프톤 마스크 및 이의 제조 방법 |
KR10-2009-0045847 | 2009-05-26 | ||
PCT/KR2010/003307 WO2010137857A2 (en) | 2009-05-26 | 2010-05-26 | Half tone mask and manufacturing method of the same |
Publications (2)
Publication Number | Publication Date |
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JP2012528354A JP2012528354A (ja) | 2012-11-12 |
JP5654577B2 true JP5654577B2 (ja) | 2015-01-14 |
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JP2012512963A Active JP5654577B2 (ja) | 2009-05-26 | 2010-05-26 | ハーフトーンマスク及びその製造方法 |
Country Status (5)
Country | Link |
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JP (1) | JP5654577B2 (ja) |
KR (1) | KR101095539B1 (ja) |
CN (1) | CN102449735B (ja) |
TW (1) | TWI434134B (ja) |
WO (1) | WO2010137857A2 (ja) |
Families Citing this family (1)
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JP6726553B2 (ja) * | 2015-09-26 | 2020-07-22 | Hoya株式会社 | フォトマスクの製造方法、及び表示装置の製造方法 |
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KR0161389B1 (ko) * | 1995-02-16 | 1999-01-15 | 윤종용 | 마스크 및 이를 사용한 패턴형성방법 |
US5914202A (en) * | 1996-06-10 | 1999-06-22 | Sharp Microeletronics Technology, Inc. | Method for forming a multi-level reticle |
KR20050104337A (ko) * | 2002-12-14 | 2005-11-02 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 액정 디스플레이 장치 제조 방법, 이 방법에 의해 제조된액정 디스플레이 장치 및 이 방법에 사용되는 마스크 |
GB0229228D0 (en) * | 2002-12-14 | 2003-01-22 | Koninkl Philips Electronics Nv | Manufacture of shaped structures in LCD cells,and masks therefor |
JP4933753B2 (ja) * | 2005-07-21 | 2012-05-16 | 信越化学工業株式会社 | 位相シフトマスクブランクおよび位相シフトマスクならびにこれらの製造方法 |
KR100787090B1 (ko) * | 2006-03-31 | 2007-12-21 | 엘지마이크론 주식회사 | 다중 반투과부를 구비한 하프톤 마스크 및 그 제조 방법 |
KR101255616B1 (ko) * | 2006-07-28 | 2013-04-16 | 삼성디스플레이 주식회사 | 다중톤 광마스크, 이의 제조방법 및 이를 이용한박막트랜지스터 기판의 제조방법 |
JP5105407B2 (ja) * | 2007-03-30 | 2012-12-26 | Hoya株式会社 | フォトマスクブランク、フォトマスク及びフォトマスクの製造方法 |
JP5239591B2 (ja) * | 2007-07-30 | 2013-07-17 | 大日本印刷株式会社 | 階調マスクおよびその製造方法 |
JP4934237B2 (ja) * | 2007-09-29 | 2012-05-16 | Hoya株式会社 | グレートーンマスクの製造方法及びグレートーンマスク、並びにパターン転写方法 |
-
2009
- 2009-05-26 KR KR1020090045847A patent/KR101095539B1/ko active IP Right Grant
-
2010
- 2010-05-26 CN CN201080023383.4A patent/CN102449735B/zh active Active
- 2010-05-26 TW TW099116829A patent/TWI434134B/zh active
- 2010-05-26 JP JP2012512963A patent/JP5654577B2/ja active Active
- 2010-05-26 WO PCT/KR2010/003307 patent/WO2010137857A2/en active Application Filing
Also Published As
Publication number | Publication date |
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KR20100127412A (ko) | 2010-12-06 |
WO2010137857A2 (en) | 2010-12-02 |
CN102449735B (zh) | 2016-01-20 |
TW201107877A (en) | 2011-03-01 |
TWI434134B (zh) | 2014-04-11 |
WO2010137857A3 (en) | 2011-03-03 |
JP2012528354A (ja) | 2012-11-12 |
CN102449735A (zh) | 2012-05-09 |
KR101095539B1 (ko) | 2011-12-19 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
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R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |