JP5643820B2 - イオン源 - Google Patents
イオン源 Download PDFInfo
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- JP5643820B2 JP5643820B2 JP2012519548A JP2012519548A JP5643820B2 JP 5643820 B2 JP5643820 B2 JP 5643820B2 JP 2012519548 A JP2012519548 A JP 2012519548A JP 2012519548 A JP2012519548 A JP 2012519548A JP 5643820 B2 JP5643820 B2 JP 5643820B2
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- 150000002500 ions Chemical class 0.000 claims description 79
- 238000010884 ion-beam technique Methods 0.000 claims description 63
- 238000000605 extraction Methods 0.000 claims description 44
- 239000012212 insulator Substances 0.000 claims description 42
- 238000009792 diffusion process Methods 0.000 claims description 12
- 230000005855 radiation Effects 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 230000004044 response Effects 0.000 claims description 7
- 239000010453 quartz Substances 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 230000005684 electric field Effects 0.000 description 9
- 230000001629 suppression Effects 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- 239000000284 extract Substances 0.000 description 3
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000013479 data entry Methods 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J27/00—Ion beam tubes
- H01J27/02—Ion sources; Ion guns
- H01J27/022—Details
- H01J27/024—Extraction optics, e.g. grids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/09—Diaphragms; Shields associated with electron or ion-optical arrangements; Compensation of disturbing fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0451—Diaphragms with fixed aperture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0451—Diaphragms with fixed aperture
- H01J2237/0453—Diaphragms with fixed aperture multiple apertures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/04—Means for controlling the discharge
- H01J2237/045—Diaphragms
- H01J2237/0456—Supports
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/065—Source emittance characteristics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/083—Beam forming
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/31—Processing objects on a macro-scale
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/961—Ion beam source and generation
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Combustion & Propulsion (AREA)
- Electron Sources, Ion Sources (AREA)
Description
Claims (16)
- 抽出開口を有するアークチャンバ内で発生されるプラズマと、
プラズマと前記抽出開口に隣接するプラズマシースとの間の境界の形状を制御するように構成されたプラズマシース変調器と、
を備え、
前記プラズマシース変調器はそれらの間にギャップを画成する1対の絶縁体を備え、前記ギャップの位置における前記境界の形状が凹面形状である、イオン源。 - 前記プラズマシース変調器は前記アークチャンバ内に定置される、請求項1記載のイオン源。
- 前記1対の絶縁体は1対の絶縁シートを備え、前記抽出開口はスリット状である、請求項1記載のイオン源。
- 前記ギャップの間隔を調整するために前記1対の絶縁体の少なくとも一つの絶縁体に機械的に結合されたアクチュエータを更に備える、請求項1記載のイオン源。
- 前記ギャップの間隔を調整するために前記1対の絶縁体に機械的に結合されたアクチュエータを更に備える、請求項1記載のイオン源。
- 前記1対の絶縁体は石英からなる、請求項1記載のイオン源。
- 前記プラズマシース変調器は前記抽出開口を経て抽出されるイオンビームの所望のイオンビーム電流密度に応答して定置される、請求項2記載のイオン源。
- 前記プラズマシース変調器は前記抽出開口を経て抽出されるイオンビームのイオンの所望の角拡散に応答して定置される、請求項2記載のイオン源。
- 前記プラズマシース変調器は前記抽出開口を経て抽出されるイオンビームの所望の放射力に応答して定置される、請求項2記載のイオン源。
- 前記抽出開口は円形形状を有し、前記プラズマシース変調器は円形開口を有する絶縁シートである、請求項2記載のイオン源。
- 前記絶縁シートの円形開口は前記抽出開口の円形形状と同心であり、前記円形開口は前記抽出開口を経て抽出されるイオンビームの所望のイオンビーム電流密度に応答して設定される可変の直径を有する、請求項10記載のイオン源、
- イオン源からイオンビームを発生させる方法であって、該方法は、
抽出開口を有する前記イオン源のアークチャンバ内にプラズマを発生させるステップと、
前記プラズマとプラズマシースとの間の境界の形状を制御するステップと、
を備え、
前記境界を制御するステップは、1対の絶縁体により画成されるギャップを生成するステップを含み、前記ギャップの位置における前記境界の形状は凹面形状である、方法 - 前記境界を制御するステップはプラズマシース変調器を前記アークチャンバ内に定置するステップを含む、請求項12記載の方法。
- 前記抽出開口を経て抽出される所望のイオンビームのイオンビーム電流密度に応答して前記プラズマシース変調器を定置するステップを更に備える、請求項13記載の方法。
- 前記抽出開口を経て抽出されるイオンビームの放射力に応答して前記プラズマシース変調器を定置するステップを更に備える、請求項14記載の方法。
- 前記キャップの間隔を調整するステップを更に備える、請求項12記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/417,929 US7767977B1 (en) | 2009-04-03 | 2009-04-03 | Ion source |
PCT/US2010/032016 WO2011155917A1 (en) | 2009-04-03 | 2010-04-22 | Ion source |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013525939A JP2013525939A (ja) | 2013-06-20 |
JP5643820B2 true JP5643820B2 (ja) | 2014-12-17 |
Family
ID=42358799
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012519548A Active JP5643820B2 (ja) | 2009-04-03 | 2010-04-22 | イオン源 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7767977B1 (ja) |
JP (1) | JP5643820B2 (ja) |
KR (1) | KR101668822B1 (ja) |
CN (1) | CN102439683B (ja) |
WO (1) | WO2011155917A1 (ja) |
Families Citing this family (46)
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US8187979B2 (en) | 2009-12-23 | 2012-05-29 | Varian Semiconductor Equipment Associates, Inc. | Workpiece patterning with plasma sheath modulation |
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US8592230B2 (en) | 2010-04-22 | 2013-11-26 | Varian Semiconductor Equipment Associates, Inc. | Method for patterning a substrate using ion assisted selective depostion |
US8435727B2 (en) | 2010-10-01 | 2013-05-07 | Varian Semiconductor Equipment Associates, Inc. | Method and system for modifying photoresist using electromagnetic radiation and ion implantation |
US20120213941A1 (en) * | 2011-02-22 | 2012-08-23 | Varian Semiconductor Equipment Associates, Inc. | Ion-assisted plasma treatment of a three-dimensional structure |
US8716682B2 (en) | 2011-04-04 | 2014-05-06 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for multiple slot ion implantation |
US8969181B2 (en) | 2011-04-11 | 2015-03-03 | Varian Semiconductor Equipment Associates, Inc. | Method for epitaxial layer overgrowth |
US8354655B2 (en) * | 2011-05-03 | 2013-01-15 | Varian Semiconductor Equipment Associates, Inc. | Method and system for controlling critical dimension and roughness in resist features |
US8288741B1 (en) | 2011-08-16 | 2012-10-16 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and method for three dimensional ion processing |
US8946061B2 (en) | 2011-08-30 | 2015-02-03 | Varian Semiconductor Equiptment Associates, Inc. | Engineering of porous coatings formed by ion-assisted direct deposition |
US8974683B2 (en) * | 2011-09-09 | 2015-03-10 | Varian Semiconductor Equipment Associates, Inc. | Method and system for modifying resist openings using multiple angled ions |
US9297063B2 (en) | 2012-04-26 | 2016-03-29 | Varian Semiconductor Equipment Associates, Inc. | Plasma potential modulated ion implantation system |
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US9288889B2 (en) | 2013-03-13 | 2016-03-15 | Varian Semiconductor Equipment Associates, Inc. | Apparatus and techniques for energetic neutral beam processing |
US20140360670A1 (en) * | 2013-06-05 | 2014-12-11 | Tokyo Electron Limited | Processing system for non-ambipolar electron plasma (nep) treatment of a substrate with sheath potential |
US9153444B2 (en) | 2013-06-19 | 2015-10-06 | Varian Semiconductor Equipment Associates, Inc. | Process flow for replacement metal gate transistors |
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-
2009
- 2009-04-03 US US12/417,929 patent/US7767977B1/en active Active
-
2010
- 2010-04-22 JP JP2012519548A patent/JP5643820B2/ja active Active
- 2010-04-22 CN CN201080020420.6A patent/CN102439683B/zh active Active
- 2010-04-22 KR KR1020117025073A patent/KR101668822B1/ko active IP Right Grant
- 2010-04-22 WO PCT/US2010/032016 patent/WO2011155917A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
WO2011155917A1 (en) | 2011-12-15 |
CN102439683A (zh) | 2012-05-02 |
KR20120130681A (ko) | 2012-12-03 |
KR101668822B1 (ko) | 2016-10-24 |
US7767977B1 (en) | 2010-08-03 |
JP2013525939A (ja) | 2013-06-20 |
CN102439683B (zh) | 2015-09-30 |
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