JP5643528B2 - 基板処理装置 - Google Patents
基板処理装置 Download PDFInfo
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- JP5643528B2 JP5643528B2 JP2010068354A JP2010068354A JP5643528B2 JP 5643528 B2 JP5643528 B2 JP 5643528B2 JP 2010068354 A JP2010068354 A JP 2010068354A JP 2010068354 A JP2010068354 A JP 2010068354A JP 5643528 B2 JP5643528 B2 JP 5643528B2
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- 238000012545 processing Methods 0.000 title claims description 144
- 239000000758 substrate Substances 0.000 title claims description 87
- 239000011347 resin Substances 0.000 claims description 7
- 229920005989 resin Polymers 0.000 claims description 7
- 239000000919 ceramic Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 5
- 238000005192 partition Methods 0.000 claims description 4
- 239000003990 capacitor Substances 0.000 description 43
- 238000009826 distribution Methods 0.000 description 27
- 230000008878 coupling Effects 0.000 description 18
- 238000010168 coupling process Methods 0.000 description 18
- 238000005859 coupling reaction Methods 0.000 description 18
- 230000008859 change Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- 230000004048 modification Effects 0.000 description 10
- 238000012986 modification Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 8
- 230000005684 electric field Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- -1 polytetrafluoroethylene Polymers 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 5
- 239000004810 polytetrafluoroethylene Substances 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000002159 abnormal effect Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 229920002493 poly(chlorotrifluoroethylene) Polymers 0.000 description 3
- 239000005023 polychlorotrifluoroethylene (PCTFE) polymer Substances 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 229910010293 ceramic material Inorganic materials 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229920001577 copolymer Polymers 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 239000000088 plastic resin Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 2
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32568—Relative arrangement or disposition of electrodes; moving means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32018—Glow discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32577—Electrical connecting means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32908—Utilities
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/02—Details
- H01J2237/024—Moving components not otherwise provided for
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/15—Means for deflecting or directing discharge
- H01J2237/1502—Mechanical adjustments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/327—Arrangements for generating the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Description
まず、基板処理装置10における第1のキャパシタ層32を厚さ1mmのテフロン(登録商標)シートを2枚重ねて形成し、第2のキャパシタ層33を1枚の厚さ1mmのテフロン(登録商標)シートで形成し、バイアス電力を印加することなく、所定の値のプラズマ生成電力を印加し、処理空間PS(ギャップ)の距離を所定の値に設定した場合の上部空間USにおけるプラズマの発生の有無を確認し、その結果を下記表1に示した。
また、基板処理装置10の上部空間USにキャパシタ層を配置せず、バイアス電力を印加することなく、所定の値のプラズマ生成電力を印加し、処理空間PS(ギャップ)の距離を所定の値に設定した場合の上部空間USにおけるプラズマの発生の有無を確認し、その結果を下記表2に示した。
PS 処理空間
US 上部空間
10,40,50 基板処理装置
11 チャンバ
12 サセプタ
13、53,63,73,83,93 側壁
14 蓋
23,41,51,61,71,81,91 シャワーヘッド
25,43 上部電極板
32 第1のキャパシタ層
33 第2のキャパシタ層
42 誘電体リング
44 誘電体部材
55,65,75,85,95 第1の誘電性部材
76,96 第2の誘電性部材
Claims (6)
- 基板を収容する筒状容器と、該筒状容器内において前記筒状容器の中心軸に沿って移動自在な移動電極と、前記筒状容器内において前記移動電極に対向する対向電極と、前記移動電極及び前記筒状容器の一方の端壁を接続する伸縮自在な隔壁とを備え、
前記移動電極または前記対向電極に高周波電力が印加されることにより前記移動電極及び前記対向電極の間に存在する第1の空間に高周波電力が印加されるとともに処理ガスが導入され、前記移動電極及び前記筒状容器の側壁は非接触である基板処理装置であって、
前記移動電極に対向する前記筒状容器の側壁に、前記移動電極の側面との重なり面積が前記移動電極の移動に伴って変化するように第1の誘電性部材が配設され、
前記第1の誘電性部材に対向する前記移動電極の側面に第2の誘電性部材が配設され、
前記基板を処理する際の前記移動電極の位置を前記基板の処理条件に応じて変えることによって、前記第1の誘電性部材と前記第2の誘電性部材との重なり面積を前記処理条件に応じて調整可能であることを特徴とする基板処理装置。 - 前記第1の誘電性部材の前記筒状容器の中心軸に沿った断面における前記中心軸に直交する方向の幅は前記中心軸に沿って一定であることを特徴とする請求項1記載の基板処理装置。
- 前記第1の誘電性部材の前記筒状容器の中心軸に沿った断面における前記中心軸に直交する方向の幅は前記中心軸に沿って順次変化することを特徴とする請求項1記載の基板処理装置。
- 前記第2の誘電性部材の前記筒状容器の中心軸に沿った断面における前記中心軸に直交する方向の幅は前記中心軸に沿って一定であることを特徴とする請求項1乃至3のいずれか1項に記載の基板処理装置。
- 前記第2の誘電性部材の前記筒状容器の中心軸に沿った断面における前記中心軸に直交する方向の幅は前記中心軸に沿って順次変化することを特徴とする請求項1乃至3のいずれか1項に記載の基板処理装置。
- 前記第1の誘電性部材及び前記第2の誘電性部材は、それぞれ石英、セラミック又は絶縁性樹脂からなることを特徴とする請求項1乃至5のいずれか1項に記載の基板処理装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010068354A JP5643528B2 (ja) | 2009-03-30 | 2010-03-24 | 基板処理装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2009081898 | 2009-03-30 | ||
JP2009081898 | 2009-03-30 | ||
JP2010068354A JP5643528B2 (ja) | 2009-03-30 | 2010-03-24 | 基板処理装置 |
Publications (2)
Publication Number | Publication Date |
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JP2010258422A JP2010258422A (ja) | 2010-11-11 |
JP5643528B2 true JP5643528B2 (ja) | 2014-12-17 |
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Family Applications (1)
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JP2010068354A Expired - Fee Related JP5643528B2 (ja) | 2009-03-30 | 2010-03-24 | 基板処理装置 |
Country Status (5)
Country | Link |
---|---|
US (2) | US8852390B2 (ja) |
JP (1) | JP5643528B2 (ja) |
KR (1) | KR101661222B1 (ja) |
CN (1) | CN101853767B (ja) |
TW (1) | TWI538567B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10131566B2 (en) | 2013-04-30 | 2018-11-20 | Corning Incorporated | Methods for modifying multi-mode optical fiber manufacturing processes |
US11698485B2 (en) | 2020-01-03 | 2023-07-11 | Corning Incorporated | Method for manufacturing multimode optical fibers |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5567392B2 (ja) * | 2010-05-25 | 2014-08-06 | 東京エレクトロン株式会社 | プラズマ処理装置 |
JP5700632B2 (ja) * | 2010-11-04 | 2015-04-15 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR101196422B1 (ko) * | 2011-02-22 | 2012-11-01 | 엘아이지에이디피 주식회사 | 플라즈마 처리장치 |
JP5902896B2 (ja) * | 2011-07-08 | 2016-04-13 | 東京エレクトロン株式会社 | 基板処理装置 |
CN103578903B (zh) * | 2012-07-18 | 2016-02-10 | 上海华虹宏力半导体制造有限公司 | 可调电极间距及平行度的刻蚀腔 |
EP2762607B1 (en) * | 2013-01-31 | 2018-07-25 | Applied Materials, Inc. | Deposition source with adjustable electrode |
US9449795B2 (en) * | 2013-02-28 | 2016-09-20 | Novellus Systems, Inc. | Ceramic showerhead with embedded RF electrode for capacitively coupled plasma reactor |
EP2784176B1 (en) | 2013-03-28 | 2018-10-03 | Applied Materials, Inc. | Deposition platform for flexible substrates |
JP6574547B2 (ja) | 2013-12-12 | 2019-09-11 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
CN105118767B (zh) * | 2015-07-27 | 2017-04-12 | 郑州大学 | 等离子体刻蚀设备 |
DE102016200506B4 (de) * | 2016-01-17 | 2024-05-02 | Robert Bosch Gmbh | Ätzvorrichtung und Ätzverfahren |
WO2020027567A1 (ko) * | 2018-07-31 | 2020-02-06 | 박문식 | 음료제조용 텀블러 및 이를 위한 첨가물 저장 캡슐 |
CN111211067A (zh) * | 2018-11-22 | 2020-05-29 | 东泰高科装备科技有限公司 | 工艺腔室和半导体处理设备 |
JP7296829B2 (ja) * | 2019-09-05 | 2023-06-23 | 東京エレクトロン株式会社 | プラズマ処理装置、処理方法、上部電極構造 |
CN111725099B (zh) * | 2020-06-15 | 2023-08-18 | 北京北方华创微电子装备有限公司 | 半导体工艺设备 |
US20220093436A1 (en) * | 2020-09-22 | 2022-03-24 | Applied Materials, Inc. | Movable electrode for process chamber |
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2010
- 2010-03-24 JP JP2010068354A patent/JP5643528B2/ja not_active Expired - Fee Related
- 2010-03-29 CN CN2010101405030A patent/CN101853767B/zh not_active Expired - Fee Related
- 2010-03-29 US US12/748,702 patent/US8852390B2/en not_active Expired - Fee Related
- 2010-03-29 TW TW099109295A patent/TWI538567B/zh not_active IP Right Cessation
- 2010-03-30 KR KR1020100028346A patent/KR101661222B1/ko active IP Right Grant
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2014
- 2014-08-19 US US14/462,657 patent/US10026596B2/en not_active Expired - Fee Related
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10131566B2 (en) | 2013-04-30 | 2018-11-20 | Corning Incorporated | Methods for modifying multi-mode optical fiber manufacturing processes |
US11708291B2 (en) | 2013-04-30 | 2023-07-25 | Corning Incorporated | Methods for modifying multi-mode optical fiber manufacturing processes |
US11698485B2 (en) | 2020-01-03 | 2023-07-11 | Corning Incorporated | Method for manufacturing multimode optical fibers |
Also Published As
Publication number | Publication date |
---|---|
US20100243167A1 (en) | 2010-09-30 |
US8852390B2 (en) | 2014-10-07 |
CN101853767B (zh) | 2012-10-24 |
JP2010258422A (ja) | 2010-11-11 |
US10026596B2 (en) | 2018-07-17 |
KR20100109477A (ko) | 2010-10-08 |
TWI538567B (zh) | 2016-06-11 |
US20140352890A1 (en) | 2014-12-04 |
TW201114333A (en) | 2011-04-16 |
CN101853767A (zh) | 2010-10-06 |
KR101661222B1 (ko) | 2016-09-29 |
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