JP5641505B2 - 窒化物系半導体発光素子の製造方法 - Google Patents
窒化物系半導体発光素子の製造方法 Download PDFInfo
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- JP5641505B2 JP5641505B2 JP2011096467A JP2011096467A JP5641505B2 JP 5641505 B2 JP5641505 B2 JP 5641505B2 JP 2011096467 A JP2011096467 A JP 2011096467A JP 2011096467 A JP2011096467 A JP 2011096467A JP 5641505 B2 JP5641505 B2 JP 5641505B2
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- 239000004065 semiconductor Substances 0.000 title claims description 163
- 150000004767 nitrides Chemical class 0.000 title claims description 104
- 238000000034 method Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 15
- 238000010438 heat treatment Methods 0.000 claims description 104
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 10
- 239000012298 atmosphere Substances 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
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- 239000010410 layer Substances 0.000 description 242
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 46
- 238000004220 aggregation Methods 0.000 description 45
- 229910002601 GaN Inorganic materials 0.000 description 41
- 239000011777 magnesium Substances 0.000 description 26
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- 238000002441 X-ray diffraction Methods 0.000 description 21
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- 238000002310 reflectometry Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 125000004429 atom Chemical group 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 239000013598 vector Substances 0.000 description 6
- 239000002019 doping agent Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910052594 sapphire Inorganic materials 0.000 description 5
- 239000010980 sapphire Substances 0.000 description 5
- 229910052984 zinc sulfide Inorganic materials 0.000 description 5
- 238000000985 reflectance spectrum Methods 0.000 description 4
- 239000011347 resin Substances 0.000 description 4
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- 238000005054 agglomeration Methods 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 125000004433 nitrogen atom Chemical group N* 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
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- 238000005520 cutting process Methods 0.000 description 2
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- 230000006866 deterioration Effects 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000005486 sulfidation Methods 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000005699 Stark effect Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000004931 aggregating effect Effects 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 230000002744 anti-aggregatory effect Effects 0.000 description 1
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- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005034 decoration Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007716 flux method Methods 0.000 description 1
- -1 gallium nitride compound Chemical class 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000010365 information processing Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000011835 investigation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000010180 surface X-ray diffraction Methods 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
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- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
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- Power Engineering (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Description
以下、本発明による窒化物系半導体発光素子の実施形態を、図面を参照しながら説明する。以下の図面においては、説明の簡潔化のため、実質的に同一の機能を有する構成要素を同一の参照符号で示す。なお、本発明は以下の実施形態に限定されない。
上述の実施形態に係る発光素子は、そのまま光源として使用されても良い。しかし、実施形態の発光素子は、波長変換のための蛍光物質を備える樹脂などと組み合わせれば、波長帯域の拡大した光源(例えば白色光源)として好適に使用され得る。
12 基板の成長面(m面)
13 p型コンタクト層の成長面(m面)
14 Ag電極の成長面
20 半導体積層構造
22 AlaInbGacN層
24 活性層
25 p型AldGaeN層
26 p型コンタクト層
30 Ag電極
40 n側電極
42 凹部
50、51 保護層
100 窒化物系半導体発光素子
200 樹脂層
220 支持部材
240 反射部材
Claims (4)
- 成長面がm面であるp型半導体領域を有する窒化物系半導体積層構造を形成する工程(a)と、
前記p型半導体領域の成長面に接し、AgのみからなるAg電極を形成する工程(b)と、
を含む窒化物半導体発光素子の製造方法であって、
前記工程(b)は、
200nm以上1000nm以下の厚さを有し、Agのみからなる前記Ag電極を形成する工程(b1)と、
窒素雰囲気、大気中、または酸素を含む雰囲気下において、500℃以上600℃以下の温度で前記Ag電極に対して加熱処理を行う工程(b2)と、を包含する窒化物半導体発光素子の製造方法。 - 前記工程(b1)では、前記Ag電極の厚さを200nm以上500nm以下とする請求項1に記載の窒化物系半導体発光素子の製造方法。
- 前記p型半導体領域は、4×1019cm-3以上2×1020cm-3以下のMgを含むコンタクト層を備え、
前記コンタクト層は、26nm以上60nm以下の厚さを有するAlxGayInzN(x+y+z=1、x≧0、y>0、z≧0)半導体から形成されている請求項1または2に記載の窒化物系半導体発光素子の製造方法。 - 前記工程(b)の後に、前記Ag電極の上に保護膜を形成する工程(c)をさらに備える請求項1から3のいずれかに記載の窒化物系半導体発光素子の製造方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011096467A JP5641505B2 (ja) | 2011-04-22 | 2011-04-22 | 窒化物系半導体発光素子の製造方法 |
US13/444,131 US20120267664A1 (en) | 2011-04-22 | 2012-04-11 | Nitride-based semiconductor light-emitting device and method for fabricating the same |
US14/800,852 US20150318445A1 (en) | 2011-04-22 | 2015-07-16 | Nitride-based semiconductor light-emitting device and method for fabricating the same |
Applications Claiming Priority (1)
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JP2011096467A JP5641505B2 (ja) | 2011-04-22 | 2011-04-22 | 窒化物系半導体発光素子の製造方法 |
Publications (2)
Publication Number | Publication Date |
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JP2012227494A JP2012227494A (ja) | 2012-11-15 |
JP5641505B2 true JP5641505B2 (ja) | 2014-12-17 |
Family
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JP2011096467A Expired - Fee Related JP5641505B2 (ja) | 2011-04-22 | 2011-04-22 | 窒化物系半導体発光素子の製造方法 |
Country Status (2)
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US (2) | US20120267664A1 (ja) |
JP (1) | JP5641505B2 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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JP6640815B2 (ja) | 2017-10-26 | 2020-02-05 | 日機装株式会社 | 半導体発光素子の製造方法 |
JP6689244B2 (ja) * | 2017-11-10 | 2020-04-28 | 日機装株式会社 | 半導体発光素子の製造方法 |
JP7044587B2 (ja) * | 2018-03-02 | 2022-03-30 | 株式会社アルバック | 半導体装置の製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US7960746B2 (en) * | 2004-01-06 | 2011-06-14 | Samsung Led Co., Ltd. | Low resistance electrode and compound semiconductor light emitting device including the same |
KR100725610B1 (ko) * | 2006-04-18 | 2007-06-08 | 포항공과대학교 산학협력단 | 오믹 전극 형성 방법 및 반도체 발광 소자 |
JP2008153285A (ja) * | 2006-12-14 | 2008-07-03 | Rohm Co Ltd | 窒化物半導体装置および窒化物半導体製造方法 |
JP4782022B2 (ja) * | 2007-01-09 | 2011-09-28 | 株式会社豊田中央研究所 | 電極の形成方法 |
JP4462289B2 (ja) * | 2007-05-18 | 2010-05-12 | ソニー株式会社 | 半導体層の成長方法および半導体発光素子の製造方法 |
JP2010056423A (ja) * | 2008-08-29 | 2010-03-11 | Meijo Univ | 半導体発光素子用電極及び半導体発光素子 |
JP5334601B2 (ja) * | 2009-01-21 | 2013-11-06 | 株式会社東芝 | 半導体発光ダイオード素子及び半導体発光装置 |
WO2010113237A1 (ja) * | 2009-04-03 | 2010-10-07 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
WO2010113238A1 (ja) * | 2009-04-03 | 2010-10-07 | パナソニック株式会社 | 窒化物系半導体素子およびその製造方法 |
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2011
- 2011-04-22 JP JP2011096467A patent/JP5641505B2/ja not_active Expired - Fee Related
-
2012
- 2012-04-11 US US13/444,131 patent/US20120267664A1/en not_active Abandoned
-
2015
- 2015-07-16 US US14/800,852 patent/US20150318445A1/en not_active Abandoned
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Publication number | Publication date |
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JP2012227494A (ja) | 2012-11-15 |
US20150318445A1 (en) | 2015-11-05 |
US20120267664A1 (en) | 2012-10-25 |
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