JP5630952B2 - 半導体発光素子 - Google Patents
半導体発光素子 Download PDFInfo
- Publication number
- JP5630952B2 JP5630952B2 JP2008289894A JP2008289894A JP5630952B2 JP 5630952 B2 JP5630952 B2 JP 5630952B2 JP 2008289894 A JP2008289894 A JP 2008289894A JP 2008289894 A JP2008289894 A JP 2008289894A JP 5630952 B2 JP5630952 B2 JP 5630952B2
- Authority
- JP
- Japan
- Prior art keywords
- light emitting
- luminescence conversion
- emitting device
- semiconductor light
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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Description
Claims (11)
- 半導体発光素子の作動中に電磁ビームを放射する半導体基体(1)と、該半導体基体(1)と導電的に接続されている少なくとも1つの第1の電気接続端子(2)及び少なくとも1つの第2の電気接続端子(3)と、少なくとも1つの蛍光物質を含有するルミネセンス変換エレメントとを備えた半導体発光素子において、
前記半導体基体(1)は半導体多層構造(7)を有し、該半導体多層構造(7)は前記半導体発光素子の作動中、第1の波長領域の青色のビームを放射し、
前記ルミネセンス変換エレメントは、前記第1の波長領域に由来するビームを該第1の波長領域とは異なる第2の波長領域のビームに変換して放射し、
前記半導体発光素子は前記第1の波長領域の可視のビームと前記第2の波長領域の可視のビームとからなる混色の白色光を放射し、該混色の白色光のスペクトルは青色のスペクトル領域において相対的な強度最大値を有し、且つ黄色光の波長において相対的な強度最大値を有し、少なくとも700nmの波長まで延びており、
前記ルミネセンス変換エレメントは、稀土類でドーピングされたチオガレート、稀土類でドーピングされたアルミン酸塩および稀土類でドーピングされたオルト珪酸塩を含むグループから選択されている無機の蛍光物質を有することを特徴とする、半導体発光素子。 - 前記黄色光の相対的な強度最大値における波長は520〜545nmまたは550〜580nmの範囲にある、請求項1記載の半導体発光素子。
- ルミネセンス変換エレメントとして、前記半導体基体(1)上に、又はその上方に少なくとも1つのルミネセンス変換層(4)が設けられている、請求項1または2記載の半導体発光素子。
- 前記半導体基体(1)はGaNをベースとする、請求項1から3までのいずれか1項記載の半導体発光素子。
- 前記半導体基体から放射されたビームスペクトルが420nmと460nmとの間での波長のもとでルミネセンス強度最大値を有する、請求項1から4までのいずれか1項記載の半導体発光素子。
- 前記ルミネセンス変換エレメントは、前記第1の波長領域のビームを、相互に異なるスペクトル部分領域から成る複数の第2の波長領域のビームに変換し、前記半導体発光素子は前記第1の波長領域の可視のビームと前記複数の第2の波長領域の可視のビームとからなる混色の白色光を放射する、請求項1から5までのいずれか1項記載の半導体発光素子。
- 前記ルミネセンス変換エレメントは複数の異なる蛍光物質を含有している、請求項1から6までのいずれか1項記載の半導体発光素子。
- 前記ルミネセンス変換エレメントは前記第1の波長領域のビームに対して部分的に透過性である、請求項1から7までのいずれか1項記載の半導体発光素子。
- 前記ルミネセンス変換エレメントは、前記半導体基体に直接的に被着されているルミネセンス変換層である、請求項1から8までのいずれか1項記載の半導体発光素子。
- 前記ルミネセンス変換エレメントは、前記半導体基体を少なくとも部分的に包囲するルミネセンス変換エンベロープである、請求項1から9までのいずれか1項記載の半導体発光素子。
- 前記ルミネセンス変換エレメントは、前記半導体基体から放射される、前記第1の波長領域のスペクトル部分領域のみに亘るビームをスペクトル的に選択的に吸収し、比較的長い前記第2の波長領域において放射する、請求項1から10までのいずれか1項記載の半導体発光素子。
Priority Applications (1)
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JP2008289894A JP5630952B6 (ja) | 1996-09-20 | 2008-11-12 | 半導体発光素子 |
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
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DE19625622A DE19625622A1 (de) | 1996-06-26 | 1996-06-26 | Lichtabstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
DE19638667A DE19638667C2 (de) | 1996-09-20 | 1996-09-20 | Mischfarbiges Licht abstrahlendes Halbleiterbauelement mit Lumineszenzkonversionselement |
DE19638667.5 | 1996-09-20 | ||
JP2007264556A JP5260018B2 (ja) | 1996-06-26 | 2007-10-10 | 半導体素子 |
JP2008289894A JP5630952B6 (ja) | 1996-09-20 | 2008-11-12 | 半導体発光素子 |
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JP2007264556A Division JP5260018B2 (ja) | 1996-06-26 | 2007-10-10 | 半導体素子 |
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