JP5615102B2 - 半導体製造方法及び半導体製造装置 - Google Patents
半導体製造方法及び半導体製造装置 Download PDFInfo
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- JP5615102B2 JP5615102B2 JP2010194323A JP2010194323A JP5615102B2 JP 5615102 B2 JP5615102 B2 JP 5615102B2 JP 2010194323 A JP2010194323 A JP 2010194323A JP 2010194323 A JP2010194323 A JP 2010194323A JP 5615102 B2 JP5615102 B2 JP 5615102B2
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- wafer
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- 239000004065 semiconductor Substances 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title claims description 20
- 230000015572 biosynthetic process Effects 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 23
- 230000008569 process Effects 0.000 claims description 22
- 230000007246 mechanism Effects 0.000 claims description 21
- 238000010926 purge Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000013022 venting Methods 0.000 claims description 4
- 230000003247 decreasing effect Effects 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 3
- 235000012431 wafers Nutrition 0.000 claims 20
- 239000007789 gas Substances 0.000 description 46
- 230000007423 decrease Effects 0.000 description 7
- 230000008859 change Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000036962 time dependent Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000001186 cumulative effect Effects 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
- 239000005052 trichlorosilane Substances 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Description
本発明の一態様の半導体製造装置は、ウェーハが搬入される反応室と、反応室内に設けられ、ウェーハを載置するための支持部材と、ウェーハの表面に、成膜時にはソースガスを含むプロセスガスを供給し、成膜後にはパージガスを供給するプロセス供給機構と、ガスを排出し、反応室内の圧力を制御し、成膜後にソースガスをベントするためのガス排出機構と、ウェーハの回転数を、成膜時には所定の第1の回転数に維持し、成膜後には第1の回転数から所定の第2の回転数に降下させ、ウェーハの温度が少なくとも所定温度より100℃下がるまで維持するように制御する回転駆動制御機構と、ウェーハを所定温度に加熱するためのヒータと、成膜時に、ヒータの出力を所定温度となるように制御し、成膜が終了し、ウェーハの回転数を第1の回転数から第2の回転数に降下させる際に、ヒータの出力を止める温度制御機構と、を備えることを特徴とする。
11a…石英カバー
12…プロセスガス供給機構
12a…ガス供給口
13…ガス排出機構
13a…ガス排出口
14…整流板
15…サセプタ
16…リング
17…回転駆動制御機構
18a…インヒータ
18b…アウトヒータ
19…温度制御機構
20…リフレクタ
21…突き上げピン
51、61…パージガス
Claims (5)
- 反応室内にウェーハを搬入し、支持部材上に載置し、
前記ウェーハの表面に、ソースガスを含むプロセスガスを供給し、前記ウェーハを所定の第1の回転数で回転させながら、ヒータの出力を制御して前記ウェーハを所定温度に加熱することにより、前記ウェーハの表面に成膜を行い、
成膜後には前記ソースガスの供給を止め、
前記ウェーハの表面にパージガスを供給しながら、前記ウェーハの回転数を、前記第1の回転数から前記ウェーハのオフセットバランスを保持可能な所定の第2の回転数に降下させて維持するとともに、前記ヒータの出力を止め、
前記ウェーハの温度が少なくとも前記所定温度より100℃下がるまで前記第2の回転数で回転させながら前記ウェーハを降温させる、
ことを特徴とする半導体製造方法。 - 前記ウェーハを降温させる際、前記ウェーハの表面に前記パージガスとしてH2ガスを供給することを特徴とする請求項1に記載の半導体製造方法。
- 前記第2の回転数は、前記第1の回転数の50%以上であることを特徴とする請求項1又は請求項2に記載の半導体製造方法。
- 前記成膜により、前記ウェーハ上に40μm以上の膜が形成されることを特徴とする請求項1から請求項3のいずれか1項に記載の半導体製造方法。
- ウェーハが搬入される反応室と、
前記反応室内に設けられ、ウェーハを載置するための支持部材と、
前記ウェーハの表面に、成膜時にはソースガスを含むプロセスガスを供給し、前記成膜後にはパージガスを供給するプロセス供給機構と、
ガスを排出し、反応室内の圧力を制御し、前記成膜後に前記ソースガスをベントするためのガス排出機構と、
前記ウェーハの回転数を、成膜時には所定の第1の回転数に維持し、前記成膜後には前記第1の回転数から所定の第2の回転数に降下させ、前記ウェーハの温度が少なくとも前記所定温度より100℃下がるまで維持するように制御する回転駆動制御機構と、
前記ウェーハを所定温度に加熱するためのヒータと、
前記成膜時に、前記ヒータの出力を所定温度となるように制御し、前記成膜が終了し、前記ウェーハの回転数を前記第1の回転数から前記第2の回転数に降下させる際に、前記ヒータの出力を止める温度制御機構と、
を備えることを特徴とする半導体製造装置。
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KR1020110049086A KR101237091B1 (ko) | 2010-08-31 | 2011-05-24 | 반도체 제조 방법 |
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CN104681402B (zh) * | 2015-03-16 | 2018-03-16 | 京东方科技集团股份有限公司 | 基板加热装置和基板加热方法 |
CN106653664B (zh) * | 2016-12-07 | 2019-11-15 | 南方科技大学 | 砷化镓晶圆用除氧托盘 |
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