JP5591695B2 - 薄膜カプセル内の半導体ウェハの再結晶化およびその関連工程 - Google Patents
薄膜カプセル内の半導体ウェハの再結晶化およびその関連工程 Download PDFInfo
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- JP5591695B2 JP5591695B2 JP2010514829A JP2010514829A JP5591695B2 JP 5591695 B2 JP5591695 B2 JP 5591695B2 JP 2010514829 A JP2010514829 A JP 2010514829A JP 2010514829 A JP2010514829 A JP 2010514829A JP 5591695 B2 JP5591695 B2 JP 5591695B2
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- 239000000463 material Substances 0.000 claims description 54
- 238000001816 cooling Methods 0.000 claims description 44
- 239000007788 liquid Substances 0.000 claims description 31
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 25
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 21
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 8
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 68
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- 238000011065 in-situ storage Methods 0.000 description 4
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
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- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
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- RHCSKNNOAZULRK-APZFVMQVSA-N 2,2-dideuterio-2-(3,4,5-trimethoxyphenyl)ethanamine Chemical compound NCC([2H])([2H])C1=CC(OC)=C(OC)C(OC)=C1 RHCSKNNOAZULRK-APZFVMQVSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 241001529739 Prunella <angiosperm> Species 0.000 description 1
- 229910004219 SiNi Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
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- 229910021431 alpha silicon carbide Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 238000013461 design Methods 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
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- 238000010574 gas phase reaction Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- 229910003465 moissanite Inorganic materials 0.000 description 1
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- 239000004482 other powder Substances 0.000 description 1
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- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B1/00—Single-crystal growth directly from the solid state
- C30B1/02—Single-crystal growth directly from the solid state by thermal treatment, e.g. strain annealing
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/02—Production of homogeneous polycrystalline material with defined structure directly from the solid state
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
- H01L21/02667—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Manufacturing & Machinery (AREA)
- Thermal Sciences (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
- Chemical Vapour Deposition (AREA)
- Silicon Compounds (AREA)
Description
2007年6月26日に出願された米国特許仮出願第60/937,129号「Casting and Directional Solidification of Photovoltaic Silicon Wafers in a Capsule and Related Processes(カプセル内の光起電シリコンウェハの鋳込および方向性凝固とその関連工程)」の利点をここに主張し、開示全体を引用により全体を本明細書に組み込む。
ウェハの形成
(部分的概要)
Claims (25)
- 半導体ウェハの作製方法であって、
a. 第1の平均粒子径を有する第1の粒子構造を有する50ミクロン超の厚さの自立構造の原半導体ウェハを提供するステップと、
b. 前記ウェハの表面全体を包囲する薄膜カプセルを提供してカプセル封入されたウェハを形成するステップと、
c. 前記原半導体ウエハが溶融し、その後前記第1の平均粒子径より大きな第2の平均粒子径の第2の粒子構造に再結晶化し、前記薄膜カプセルが損なわれない状態のままでいるような条件下で、前記カプセル封入されたウェハを加熱および冷却するステップと、
を含む、方法。 - 前記加熱および冷却するステップが大気中で実行される、請求項1に記載の方法。
- 前記第1の平均粒子径が10mm2未満であって、前記第2の平均粒子径が1mm2以上である、請求項1に記載の方法。
- 前記薄膜カプセルが、加熱および再結晶化中に前記ウェハが上下動するのを防止する、請求項1に記載の方法。
- 前記薄膜カプセルが、再結晶化中の粒子の核形成を促進しない表面を有する、請求項1に記載の方法。
- 前記薄膜カプセルが、再結晶が起こる環境内での要素による前記再結晶ウェハの汚染を防止する、請求項1に記載の方法。
- 前記薄膜カプセルを除去する前記ステップをさらに含む、請求項1に記載の方法。
- 前記薄膜カプセルを提供する前記ステップが酸化膜カプセルを提供することを含む、請求項1に記載の方法。
- 前記酸化膜カプセルは酸化シリコンである、請求項8に記載の方法。
- 前記薄膜カプセルを提供する前記ステップが、スピンオンガラス工程、スパッタリング、物理気相成長、及び化学気相蒸着から成る群から選ばれる方法を用いて、前記原半導体ウェハ上に前記薄膜カプセルを直接蒸着し、又は、乾燥酸化物の成長及び湿潤酸化物の成長から成る群から選ばれる方法を用いて、前記原半導体ウェハ上に前記薄膜カプセルを形成することを含む、請求項1に記載の方法。
- 前記再結晶化するステップの前に、前記薄膜カプセルのうち少なくとも1つの表面に隣接する少なくとも1つの支持要素を提供することをさらに含み、前記支持要素がほぼ平坦な状態を維持するように前記半導体ウェハ及びその前記薄膜カプセルを支持し、加熱および再結晶化中に、前記薄膜カプセル、及び、前記薄膜カプセルと前記少なくとも1つの支持要素との間に提供され得る任意の剥離材料の少なくとも一方が、前記原半導体ウェハが前記少なくとも1つの支持要素に付着することを防ぐ材料を含む、請求項1に記載の方法。
- 前記剥離材料が微粒子を含む、請求項11に記載の方法。
- 前記少なくとも1つの支持要素が一対の支持要素を含み、そのそれぞれが前記薄膜カプセルの2つの向面の一方と隣接する、請求項11に記載の方法。
- 前記少なくとも1つの支持要素が一対の支持要素を含み、前記少なくとも1つの一対の支持要素が不均一な厚さ及び互いに異なる熱特性を有する、請求項11に記載の方法。
- 前記少なくとも1つの支持要素が炭化ケイ素を含む、請求項11に記載の方法。
- 前記少なくとも1つの支持要素を提供するステップが、前記半導体ウェハの中央面に直角な線が局所重力場に対して垂直でないように配置されるべく、前記半導体ウェハを提供することを含む、請求項11に記載の方法。
- 前記冷却するステップが、前記加熱されたカプセル封入ウェハ内に、液状帯と再結品半導体帯との問に凝結界面を確立することを含み、前記凝結界面が前記ウェハ中央面に関して非対称である、請求項1に記載の方法。
- 前記加熱および冷却するステップが、前記加熱されたウェハの前記中央面に関して非対称な冷却環境を提供することを含む、請求項1に記載の方法。
- 前記薄膜がシリコン化合物と窒素、炭素、および酸素から成る群のうち少なくとも1つとを含む、請求項1に記載の方法。
- 前記原ウェハが50ミクロン〜400ミクロンの間の厚さを有し、前記カプセルの薄膜が0.25ミクロン〜5ミクロンの間の厚さを有する、請求項1に記載の方法。
- 前記原半導体ウェハを提供する前記ステップが、テクスチャ表面を有する半導体ウェハの提供を含む、請求項1に記載の方法。
- 薄膜カプセルを提供する前記ステップが、一緒に前記原半導体ウェハのほぼ全表面を囲む複数の入れ子状薄膜カプセルを提供することを含む、請求項1に記載の方法。
- 前記複数の入れ子状薄膜カプセルは、酸化シリコンを含む少なくとも1つの薄膜カプセル及び窒化シリコンを含む少なくとも1つの薄膜カプセルを含む、請求項22に記載の方法。
- 前記支持要素を間に有する少なくとも2つの前記カプセル封入されたウェハを少なくとも2つ以上の支持要素間に積み重ねるステップをさらに含み、前記カプセル封入されたウェハを加熱および冷却するステップが、一緒に積み重ねられた少なくとも2つの前記カプセル封入されたウェハを加熱および冷却することを含む、請求項11に記載の方法。
- 前記ウェハを加熱および冷却する前記ステップが、前記再結晶ウェハの後端部分が前記再結晶ウェハの他の部分よりも大きな不純物中央濃度を有するようにして、前記ウェハと前記ウェハ内で溶融帯を確立する加熱環境との間の相対運動を提供することを含み、前記再結晶ウェハの前記他の部分から後端部分を除去するステップをさらに含み、再結晶ウェハの噴出部が生じ、前記再結晶ウェハの前記他の部分から前記噴出部を除去するステップをさらに含む、請求項1に記載の方法。
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US93712907P | 2007-06-26 | 2007-06-26 | |
US60/937,129 | 2007-06-26 | ||
PCT/US2008/008030 WO2009002550A1 (en) | 2007-06-26 | 2008-06-26 | Recrystallization of semiconductor wafers in a thin film capsule and related processes |
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KR20100038306A (ko) | 2010-04-14 |
CN101790774A (zh) | 2010-07-28 |
WO2009002550A1 (en) | 2008-12-31 |
US20140124963A1 (en) | 2014-05-08 |
KR101527139B1 (ko) | 2015-06-08 |
EP2168145A1 (en) | 2010-03-31 |
HK1146765A1 (en) | 2011-07-08 |
JP2010532570A (ja) | 2010-10-07 |
US9932689B2 (en) | 2018-04-03 |
CN101790774B (zh) | 2012-05-02 |
EP2168145A4 (en) | 2011-06-29 |
US20100295061A1 (en) | 2010-11-25 |
US8633483B2 (en) | 2014-01-21 |
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