JP5582147B2 - 発光素子および該発光素子を用いた画像表示装置 - Google Patents
発光素子および該発光素子を用いた画像表示装置 Download PDFInfo
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- JP5582147B2 JP5582147B2 JP2011537201A JP2011537201A JP5582147B2 JP 5582147 B2 JP5582147 B2 JP 5582147B2 JP 2011537201 A JP2011537201 A JP 2011537201A JP 2011537201 A JP2011537201 A JP 2011537201A JP 5582147 B2 JP5582147 B2 JP 5582147B2
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- 230000010287 polarization Effects 0.000 claims description 49
- 239000004065 semiconductor Substances 0.000 description 24
- 238000010586 diagram Methods 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 10
- 230000000737 periodic effect Effects 0.000 description 10
- 239000000758 substrate Substances 0.000 description 10
- 238000003786 synthesis reaction Methods 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 230000003287 optical effect Effects 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 5
- 238000005286 illumination Methods 0.000 description 5
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 239000002184 metal Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 239000002070 nanowire Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/10—Beam splitting or combining systems
- G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
- G02B27/102—Beam splitting or combining systems for splitting or combining different wavelengths for generating a colour image from monochromatic image signal sources
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
- G02B27/28—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
- G02B27/283—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising used for beam splitting or combining
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Polarising Elements (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Devices (AREA)
Description
前記活性層にて発生した光のうち、第1の方向の偏光を透過させ、それ以外は反射させる第1の領域と、前記第1の方向と直交する第2の方向の偏光を透過させ、それ以外は反射させる第2の領域と、を備える偏光子層と、
前記第1の領域と第2の領域より出射した光を入射し、同じ偏光状態の光として出射する第3の領域および第4の領域を備える波長板層と、
前記第1の領域および第2の領域で反射された光を反射する反射層と、を有することを特徴とする。
101 サブマウント
102 P型電極
103 反射層
104 P型半導体層
105 活性層
106 N型半導体層
107 N型電極
108 偏光子層
109 1/2波長板層
Claims (10)
- 光を発生する活性層を備える発光素子であって、
前記活性層にて発生した光のうち、第1の方向の偏光を透過させ、それ以外は反射させる第1の領域と、前記第1の方向と直交する第2の方向の偏光を透過させ、それ以外は反射させる第2の領域と、を備える偏光子層と、
前記第1の領域と第2の領域より出射した光を入射し、同じ偏光状態の光として出射する第3の領域および第4の領域を備える波長板層と、
前記第1の領域および第2の領域で反射された光を反射する反射層と、を有することを特徴とする発光素子。 - 請求項1記載の発光素子において、
第1の領域と第2の領域、および、第3の領域と第4の領域は、縞状に隣接配置されていることを特徴とする発光素子。 - 請求項1記載の発光素子において、
第1の領域と第2の領域、および、第3の領域と第4の領域は、千鳥状に隣接配置されていることを特徴とする発光素子。 - 請求項1ないし請求項3のいずれかに記載の発光素子において、
第3の領域および第4の領域は、入射光に異なる偏光回転角をそれぞれ与えて出射することを特徴とする発光素子。 - 請求項4記載の発光素子において、
第4の領域は入射光に対して第3の領域で与えられる偏光回転角に90度の偏光回転角を加えて出射することを特徴とする発光素子。 - 請求項1ないし請求項3のいずれかに記載の発光素子において、
第3の領域および第4の領域は、入射光の直交する2つの偏光成分に異なる位相差をそれぞれ与えて円偏光として出射することを特徴とする発光素子。 - 請求項1ないし請求項6のいずれかに記載の発光素子において、
第1の領域と第2の領域の幅を加えたものをP、偏光子層の厚さ方向の中心と反射層の厚さ方向の中心の間の距離をL1、活性層の厚さ方向の中心から偏光子層の中心までの距離をL2、としたときに、
P/(2L1+L2)が0.9から6.5の間であることを特徴とする発光素子。 - 請求項7記載の発光素子において、
P/(2L1+L2)が1.2から4.5の間であることを特徴とする発光素子。 - 請求項7記載の発光素子において、
P/(2L1+L2)が2.3であることを特徴とする発光素子。 - 請求項1ないし請求項9のいずれかに記載の発光素子を用いた画像表示装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011537201A JP5582147B2 (ja) | 2009-10-22 | 2010-10-06 | 発光素子および該発光素子を用いた画像表示装置 |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009243367 | 2009-10-22 | ||
JP2009243367 | 2009-10-22 | ||
JP2011537201A JP5582147B2 (ja) | 2009-10-22 | 2010-10-06 | 発光素子および該発光素子を用いた画像表示装置 |
PCT/JP2010/067539 WO2011048951A1 (ja) | 2009-10-22 | 2010-10-06 | 発光素子および該発光素子を用いた画像表示装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2011048951A1 JPWO2011048951A1 (ja) | 2013-03-07 |
JP5582147B2 true JP5582147B2 (ja) | 2014-09-03 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011537201A Expired - Fee Related JP5582147B2 (ja) | 2009-10-22 | 2010-10-06 | 発光素子および該発光素子を用いた画像表示装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8643050B2 (ja) |
JP (1) | JP5582147B2 (ja) |
CN (1) | CN102576791B (ja) |
WO (1) | WO2011048951A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102576792B (zh) * | 2009-10-22 | 2015-06-17 | 日本电气株式会社 | 发光元件和使用该发光元件的图像显示设备 |
CN109065600B (zh) | 2018-08-24 | 2020-07-28 | 京东方科技集团股份有限公司 | 一种偏光模组和显示面板 |
CN110967860B (zh) * | 2018-09-28 | 2021-12-03 | 京东方科技集团股份有限公司 | 显示面板和显示装置 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10160932A (ja) * | 1996-11-27 | 1998-06-19 | Sharp Corp | 偏光素子およびその製造方法 |
JP2005084634A (ja) * | 2003-09-11 | 2005-03-31 | Seiko Epson Corp | 光源装置、光源装置の製造方法、投射型表示装置 |
JP2006276239A (ja) * | 2005-03-28 | 2006-10-12 | Fujinon Corp | 偏光変換素子及びその製造方法並びに光源ユニット |
JP2007109689A (ja) * | 2005-10-11 | 2007-04-26 | Seiko Epson Corp | 発光素子、発光素子の製造方法及び画像表示装置 |
JP2008060534A (ja) * | 2006-08-30 | 2008-03-13 | Samsung Electro Mech Co Ltd | 偏光発光ダイオード |
JP2008122618A (ja) * | 2006-11-10 | 2008-05-29 | Ricoh Co Ltd | 偏光光源ユニット |
JP2009239075A (ja) * | 2008-03-27 | 2009-10-15 | Rohm Co Ltd | 発光素子 |
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US5327285A (en) * | 1990-06-11 | 1994-07-05 | Faris Sadeg M | Methods for manufacturing micropolarizers |
JP2001051122A (ja) | 1999-06-01 | 2001-02-23 | Autocloning Technology:Kk | 複屈折性周期構造体、位相板、回折格子型の偏光ビームスプリッタ及びそれらの作製方法 |
GB9916145D0 (en) | 1999-07-10 | 1999-09-08 | Secr Defence | Control of polarisation of vertical cavity surface emitting lasers |
JP2001215444A (ja) | 2000-02-02 | 2001-08-10 | Konica Corp | 三次元画像表示装置 |
JP2002098954A (ja) * | 2000-07-21 | 2002-04-05 | Citizen Watch Co Ltd | 半透過反射型液晶表示装置 |
JP3707420B2 (ja) * | 2001-10-24 | 2005-10-19 | セイコーエプソン株式会社 | 液晶表示装置および電子機器 |
US6665119B1 (en) * | 2002-10-15 | 2003-12-16 | Eastman Kodak Company | Wire grid polarizer |
WO2005029050A1 (ja) * | 2003-09-17 | 2005-03-31 | Photonic Lattice Inc. | 偏光解析装置および偏光解析方法 |
US7408201B2 (en) * | 2004-03-19 | 2008-08-05 | Philips Lumileds Lighting Company, Llc | Polarized semiconductor light emitting device |
US7808011B2 (en) * | 2004-03-19 | 2010-10-05 | Koninklijke Philips Electronics N.V. | Semiconductor light emitting devices including in-plane light emitting layers |
US7293876B2 (en) * | 2004-03-24 | 2007-11-13 | Seiko Epson Corporation | Light source unit and projector |
KR100634681B1 (ko) * | 2005-05-23 | 2006-10-13 | 엘지전자 주식회사 | 편광판, 백라이트 장치 및 이에 사용되는 편광판의제조방법 |
WO2007108212A1 (ja) | 2006-03-17 | 2007-09-27 | Japan Science And Technology Agency | 周期構造体及び周期構造の作製方法並びに応用製品 |
JP2009111012A (ja) | 2007-10-26 | 2009-05-21 | Rohm Co Ltd | 半導体発光素子 |
JP2009117641A (ja) | 2007-11-07 | 2009-05-28 | Rohm Co Ltd | 半導体発光素子 |
-
2010
- 2010-10-06 WO PCT/JP2010/067539 patent/WO2011048951A1/ja active Application Filing
- 2010-10-06 JP JP2011537201A patent/JP5582147B2/ja not_active Expired - Fee Related
- 2010-10-06 CN CN201080047424.3A patent/CN102576791B/zh not_active Expired - Fee Related
- 2010-10-06 US US13/503,284 patent/US8643050B2/en not_active Expired - Fee Related
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10160932A (ja) * | 1996-11-27 | 1998-06-19 | Sharp Corp | 偏光素子およびその製造方法 |
JP2005084634A (ja) * | 2003-09-11 | 2005-03-31 | Seiko Epson Corp | 光源装置、光源装置の製造方法、投射型表示装置 |
JP2006276239A (ja) * | 2005-03-28 | 2006-10-12 | Fujinon Corp | 偏光変換素子及びその製造方法並びに光源ユニット |
JP2007109689A (ja) * | 2005-10-11 | 2007-04-26 | Seiko Epson Corp | 発光素子、発光素子の製造方法及び画像表示装置 |
JP2008060534A (ja) * | 2006-08-30 | 2008-03-13 | Samsung Electro Mech Co Ltd | 偏光発光ダイオード |
JP2008122618A (ja) * | 2006-11-10 | 2008-05-29 | Ricoh Co Ltd | 偏光光源ユニット |
JP2009239075A (ja) * | 2008-03-27 | 2009-10-15 | Rohm Co Ltd | 発光素子 |
Also Published As
Publication number | Publication date |
---|---|
WO2011048951A1 (ja) | 2011-04-28 |
US20120217529A1 (en) | 2012-08-30 |
CN102576791B (zh) | 2014-11-19 |
JPWO2011048951A1 (ja) | 2013-03-07 |
CN102576791A (zh) | 2012-07-11 |
US8643050B2 (en) | 2014-02-04 |
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