JP5572623B2 - 基板処理チャンバを洗浄する方法 - Google Patents
基板処理チャンバを洗浄する方法 Download PDFInfo
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- JP5572623B2 JP5572623B2 JP2011516399A JP2011516399A JP5572623B2 JP 5572623 B2 JP5572623 B2 JP 5572623B2 JP 2011516399 A JP2011516399 A JP 2011516399A JP 2011516399 A JP2011516399 A JP 2011516399A JP 5572623 B2 JP5572623 B2 JP 5572623B2
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- 238000012545 processing Methods 0.000 title claims description 167
- 239000000758 substrate Substances 0.000 title claims description 140
- 238000000034 method Methods 0.000 title claims description 65
- 238000004140 cleaning Methods 0.000 title claims description 62
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 39
- 230000008569 process Effects 0.000 claims description 38
- 239000003361 porogen Substances 0.000 claims description 32
- 239000001307 helium Substances 0.000 claims description 22
- 229910052734 helium Inorganic materials 0.000 claims description 22
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- 239000003989 dielectric material Substances 0.000 claims description 13
- 239000007789 gas Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 238000005086 pumping Methods 0.000 claims description 9
- 229910052710 silicon Inorganic materials 0.000 claims description 9
- 239000010703 silicon Substances 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- YHQGMYUVUMAZJR-UHFFFAOYSA-N α-terpinene Chemical compound CC(C)C1=CC=C(C)CC1 YHQGMYUVUMAZJR-UHFFFAOYSA-N 0.000 claims description 8
- 239000002243 precursor Substances 0.000 claims description 7
- 238000012546 transfer Methods 0.000 claims description 5
- WSTYNZDAOAEEKG-UHFFFAOYSA-N Mayol Natural products CC1=C(O)C(=O)C=C2C(CCC3(C4CC(C(CC4(CCC33C)C)=O)C)C)(C)C3=CC=C21 WSTYNZDAOAEEKG-UHFFFAOYSA-N 0.000 claims description 4
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 claims description 4
- 238000001723 curing Methods 0.000 description 20
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 15
- 239000000463 material Substances 0.000 description 12
- 238000003848 UV Light-Curing Methods 0.000 description 11
- 238000005229 chemical vapour deposition Methods 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 9
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 235000012239 silicon dioxide Nutrition 0.000 description 7
- 239000010453 quartz Substances 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
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- 230000008021 deposition Effects 0.000 description 4
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- 238000013461 design Methods 0.000 description 2
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- 238000011065 in-situ storage Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000012805 post-processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
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- 238000012937 correction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000593 degrading effect Effects 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229940104869 fluorosilicate Drugs 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000010943 off-gassing Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/6719—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the processing chambers, e.g. modular processing chambers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Drying Of Semiconductors (AREA)
- Formation Of Insulating Films (AREA)
Description
Claims (9)
- 処理チャンバを洗浄する方法であって、
(a)基板のバッチからの基板を前記基板上に堆積された誘電材料からポロゲンを取り除くため、前記処理チャンバ内で処理することと、
(b)前記基板を前記処理チャンバから取り除くことと、
(c) 前記処理チャンバを5Torrまで加圧すること、
前記処理チャンバを385℃まで加熱すること、
オゾンを前記処理チャンバ内に、10標準リットル/分で導入すること、および、
前記処理チャンバを紫外光に15秒から30秒間暴露すること、
を含む急速チャンバ洗浄を実行することと、
(d)前記(a)から(c)をバッチ内の最後の基板が前記(a)における処理を終えるまで繰り返すことと、
(e)前記バッチ内の前記最後の基板を処理した後に、前記最後の基板を前記処理チャンバから取り除くことと、
(f) 前記処理チャンバを5Torrまで加圧すること、
前記処理チャンバを385℃まで加熱すること、
オゾンを前記処理チャンバ内に、10標準リットル/分で導入すること、および、
前記処理チャンバを紫外光に3分から15分間暴露すること、
を含むバッチチャンバ洗浄を実行することと、
を含む処理チャンバを洗浄する方法。 - 前記急速チャンバ洗浄が、
前記(d)の前に、前記処理チャンバを10標準リットル/分のヘリウムで10秒間浄化することと、
前記処理チャンバを10秒間ポンピングすることと、
をさらに含む、請求項1に記載の方法。 - 基板処理チャンバを洗浄する方法であって、
(a)シリコン含有前駆体とポロゲンの混合ガスを、第1の処理チャンバへ流入させることと、
(b)前記第1のチャンバ内において、低誘電率誘電膜を基板のバッチからの基板上へ堆積させることと、
(c)前記基板に堆積された前記低誘電率誘電膜からポロゲンを除去するために、前記基板のバッチからの前記基板を第2の処理チャンバ内で処理することと、
(d)前記基板を前記第2の処理チャンバから取り除くことと、
(e) 前記第2の処理チャンバを5Torrまで加圧すること、
前記第2の処理チャンバを385℃まで加熱すること、
オゾンを前記第2の処理チャンバ内に導入すること、および、
前記第2の処理チャンバを紫外光に15秒から30秒間暴露すること、
を含む急速チャンバ洗浄を実施することと、
(f)前記(a)から(e)を前記基板のバッチが前記(d)における処理を終えるまで繰り返すことと、
(g) 前記第2の処理チャンバを5Torrまで加圧すること、
前記第2の処理チャンバを385℃まで加熱すること、
オゾンを前記第2の処理チャンバ内に導入すること、および、
前記第2の処理チャンバを紫外光に3分から15分間暴露すること、
を含むバッチチャンバ洗浄を実行することと、
を含む基板処理チャンバを洗浄する方法。 - 前記シリコン含有前駆体がメチルジエトキシシランを含み、前記ポロゲンがアルファテルピネンを含む、請求項3に記載の方法。
- 前記急速チャンバ洗浄は前記基板の搬送中のチャンバのアイドルタイムよりも短い時間周期で実行される請求項3に記載の方法。
- 前記(e)と(g)における前記第2の処理チャンバの圧力は5Torrである請求項3に記載の方法。
- 前記(e)が、前記第2の処理チャンバを10標準リットル/分のヘリウムで10秒間浄化することと、
前記第2の処理チャンバを10秒間ポンピングすることと、
をさらに含む、請求項3に記載の方法。 - 前記第2の処理チャンバを50Torrまで加圧し、前記第2の処理チャンバを385℃まで加熱し、前記第2の処理チャンバに10標準リットル/分のヘリウムを導入しながら、前記基板を300℃より高い温度で165秒間紫外光に暴露することによって、前記低誘電率誘電膜からポロゲンが除去される請求項3に記載の方法。
- 前記第2の処理チャンバに10標準リットル/分のアルゴンを導入することをさらに含む請求項8に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7653708P | 2008-06-27 | 2008-06-27 | |
US61/076,537 | 2008-06-27 | ||
US12/178,523 | 2008-07-23 | ||
US12/178,523 US20100018548A1 (en) | 2008-07-23 | 2008-07-23 | Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance |
PCT/US2009/046270 WO2009158169A1 (en) | 2008-06-27 | 2009-06-04 | Superimposition of rapid periodic and extensive post multiple substrate uv-ozone clean sequences for high throughput and stable substrate to substrate performance |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2011526077A JP2011526077A (ja) | 2011-09-29 |
JP2011526077A5 JP2011526077A5 (ja) | 2012-07-19 |
JP5572623B2 true JP5572623B2 (ja) | 2014-08-13 |
Family
ID=41444874
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011516399A Expired - Fee Related JP5572623B2 (ja) | 2008-06-27 | 2009-06-04 | 基板処理チャンバを洗浄する方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP5572623B2 (ja) |
KR (1) | KR101631586B1 (ja) |
CN (1) | CN102077316A (ja) |
TW (1) | TWI465298B (ja) |
WO (1) | WO2009158169A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US8911553B2 (en) * | 2010-10-19 | 2014-12-16 | Applied Materials, Inc. | Quartz showerhead for nanocure UV chamber |
TWI476144B (zh) * | 2012-05-14 | 2015-03-11 | Univ Nat Taiwan | 週期性奈米孔洞狀結構陣列之製造方法及其用途 |
CN104916522B (zh) * | 2014-03-10 | 2017-12-22 | 中芯国际集成电路制造(上海)有限公司 | 去除hasti制备过程中形成的残留颗粒的方法 |
JP7304768B2 (ja) * | 2019-08-16 | 2023-07-07 | 株式会社Screenホールディングス | 熱処理装置および熱処理装置の洗浄方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US6254689B1 (en) * | 1999-03-09 | 2001-07-03 | Lucent Technologies Inc. | System and method for flash photolysis cleaning of a semiconductor processing chamber |
US6843858B2 (en) * | 2002-04-02 | 2005-01-18 | Applied Materials, Inc. | Method of cleaning a semiconductor processing chamber |
TW535222B (en) * | 2002-06-11 | 2003-06-01 | Toppoly Optoelectronics Corp | Method for depositing thin film using plasma chemical vapor deposition |
US6911233B2 (en) * | 2002-08-08 | 2005-06-28 | Toppoly Optoelectronics Corp. | Method for depositing thin film using plasma chemical vapor deposition |
TW200410337A (en) * | 2002-12-02 | 2004-06-16 | Au Optronics Corp | Dry cleaning method for plasma reaction chamber |
US7265061B1 (en) * | 2003-05-09 | 2007-09-04 | Novellus Systems, Inc. | Method and apparatus for UV exposure of low dielectric constant materials for porogen removal and improved mechanical properties |
US20050161060A1 (en) * | 2004-01-23 | 2005-07-28 | Johnson Andrew D. | Cleaning CVD chambers following deposition of porogen-containing materials |
US7709814B2 (en) * | 2004-06-18 | 2010-05-04 | Axcelis Technologies, Inc. | Apparatus and process for treating dielectric materials |
TWI424460B (zh) * | 2004-06-18 | 2014-01-21 | Axcelis Tech Inc | 用於處理介電材料之設備及製程 |
US20060249175A1 (en) * | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | High efficiency UV curing system |
US20060251827A1 (en) * | 2005-05-09 | 2006-11-09 | Applied Materials, Inc. | Tandem uv chamber for curing dielectric materials |
US20070134435A1 (en) * | 2005-12-13 | 2007-06-14 | Ahn Sang H | Method to improve the ashing/wet etch damage resistance and integration stability of low dielectric constant films |
US7589336B2 (en) * | 2006-03-17 | 2009-09-15 | Applied Materials, Inc. | Apparatus and method for exposing a substrate to UV radiation while monitoring deterioration of the UV source and reflectors |
JP5258241B2 (ja) * | 2006-09-19 | 2013-08-07 | 日本エー・エス・エム株式会社 | Uv照射チャンバーをクリーニングする方法 |
-
2009
- 2009-06-04 KR KR1020117002159A patent/KR101631586B1/ko active IP Right Grant
- 2009-06-04 WO PCT/US2009/046270 patent/WO2009158169A1/en active Application Filing
- 2009-06-04 CN CN200980125854XA patent/CN102077316A/zh active Pending
- 2009-06-04 JP JP2011516399A patent/JP5572623B2/ja not_active Expired - Fee Related
- 2009-06-23 TW TW098121035A patent/TWI465298B/zh active
Also Published As
Publication number | Publication date |
---|---|
TW201008671A (en) | 2010-03-01 |
KR101631586B1 (ko) | 2016-06-17 |
CN102077316A (zh) | 2011-05-25 |
KR20110025227A (ko) | 2011-03-09 |
WO2009158169A1 (en) | 2009-12-30 |
TWI465298B (zh) | 2014-12-21 |
JP2011526077A (ja) | 2011-09-29 |
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