JP5529836B2 - 相変化メモリ材料を製造するためのテルル(Te)前駆体 - Google Patents
相変化メモリ材料を製造するためのテルル(Te)前駆体 Download PDFInfo
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- JP5529836B2 JP5529836B2 JP2011262709A JP2011262709A JP5529836B2 JP 5529836 B2 JP5529836 B2 JP 5529836B2 JP 2011262709 A JP2011262709 A JP 2011262709A JP 2011262709 A JP2011262709 A JP 2011262709A JP 5529836 B2 JP5529836 B2 JP 5529836B2
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- 239000002243 precursor Substances 0.000 title claims description 50
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 title description 21
- 229910052714 tellurium Inorganic materials 0.000 title description 13
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000000463 material Substances 0.000 title description 3
- 238000000034 method Methods 0.000 claims description 34
- 238000000151 deposition Methods 0.000 claims description 33
- 125000004122 cyclic group Chemical group 0.000 claims description 18
- 230000008021 deposition Effects 0.000 claims description 15
- 229910052739 hydrogen Inorganic materials 0.000 claims description 15
- 239000001257 hydrogen Substances 0.000 claims description 15
- 239000012782 phase change material Substances 0.000 claims description 15
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 13
- 125000000217 alkyl group Chemical group 0.000 claims description 12
- 229910052805 deuterium Inorganic materials 0.000 claims description 12
- YZCKVEUIGOORGS-OUBTZVSYSA-N Deuterium Chemical compound [2H] YZCKVEUIGOORGS-OUBTZVSYSA-N 0.000 claims description 11
- 150000004770 chalcogenides Chemical class 0.000 claims description 9
- NNCGPRGCYAWTAF-UHFFFAOYSA-N tellurium hexafluoride Chemical compound F[Te](F)(F)(F)(F)F NNCGPRGCYAWTAF-UHFFFAOYSA-N 0.000 claims description 8
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- GMEFXBFKMIZRMO-UHFFFAOYSA-N aminogermanium Chemical compound [Ge]N GMEFXBFKMIZRMO-UHFFFAOYSA-N 0.000 claims description 5
- SBBIQGKTWQQQQB-UHFFFAOYSA-N [SbH2]N Chemical compound [SbH2]N SBBIQGKTWQQQQB-UHFFFAOYSA-N 0.000 claims description 4
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 15
- 239000000203 mixture Substances 0.000 description 15
- TULWUZJYDBGXMY-UHFFFAOYSA-N tellurophene Chemical compound [Te]1C=CC=C1 TULWUZJYDBGXMY-UHFFFAOYSA-N 0.000 description 11
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 10
- 238000000231 atomic layer deposition Methods 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- -1 aminogermanium compound Chemical class 0.000 description 8
- 125000004663 dialkyl amino group Chemical group 0.000 description 5
- 125000003342 alkenyl group Chemical group 0.000 description 4
- 238000009835 boiling Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- 238000004821 distillation Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- 125000003800 germyl group Chemical group [H][Ge]([H])([H])[*] 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 125000003808 silyl group Chemical group [H][Si]([H])([H])[*] 0.000 description 4
- 229910000059 tellane Inorganic materials 0.000 description 4
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 4
- 229910000618 GeSbTe Inorganic materials 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 3
- 125000003118 aryl group Chemical group 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical group [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 150000003498 tellurium compounds Chemical class 0.000 description 3
- OKKJLVBELUTLKV-MZCSYVLQSA-N Deuterated methanol Chemical compound [2H]OC([2H])([2H])[2H] OKKJLVBELUTLKV-MZCSYVLQSA-N 0.000 description 2
- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 125000003277 amino group Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- IJOOHPMOJXWVHK-UHFFFAOYSA-N chlorotrimethylsilane Chemical compound C[Si](C)(C)Cl IJOOHPMOJXWVHK-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 125000002147 dimethylamino group Chemical group [H]C([H])([H])N(*)C([H])([H])[H] 0.000 description 2
- LFQSCWFLJHTTHZ-LIDOUZCJSA-N ethanol-d6 Chemical compound [2H]OC([2H])([2H])C([2H])([2H])[2H] LFQSCWFLJHTTHZ-LIDOUZCJSA-N 0.000 description 2
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 2
- JKUUTODNPMRHHZ-UHFFFAOYSA-N n-methyl-n-[tris(dimethylamino)germyl]methanamine Chemical group CN(C)[Ge](N(C)C)(N(C)C)N(C)C JKUUTODNPMRHHZ-UHFFFAOYSA-N 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002244 precipitate Substances 0.000 description 2
- 238000010926 purge Methods 0.000 description 2
- 238000006722 reduction reaction Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 150000004772 tellurides Chemical class 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- MSZZQUKSERFTTQ-UHFFFAOYSA-N N[Sb] Chemical compound N[Sb] MSZZQUKSERFTTQ-UHFFFAOYSA-N 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 235000011089 carbon dioxide Nutrition 0.000 description 1
- 229910052800 carbon group element Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- LFQSCWFLJHTTHZ-WFVSFCRTSA-N deuteriooxyethane Chemical compound [2H]OCC LFQSCWFLJHTTHZ-WFVSFCRTSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 150000002291 germanium compounds Chemical class 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 230000005445 isotope effect Effects 0.000 description 1
- CQRPUKWAZPZXTO-UHFFFAOYSA-M magnesium;2-methylpropane;chloride Chemical compound [Mg+2].[Cl-].C[C-](C)C CQRPUKWAZPZXTO-UHFFFAOYSA-M 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- OKKJLVBELUTLKV-VMNATFBRSA-N methanol-d1 Chemical compound [2H]OC OKKJLVBELUTLKV-VMNATFBRSA-N 0.000 description 1
- POPACFLNWGUDSR-UHFFFAOYSA-N methoxy(trimethyl)silane Chemical compound CO[Si](C)(C)C POPACFLNWGUDSR-UHFFFAOYSA-N 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- ZUSRFDBQZSPBDV-UHFFFAOYSA-N n-[bis(dimethylamino)stibanyl]-n-methylmethanamine Chemical compound CN(C)[Sb](N(C)C)N(C)C ZUSRFDBQZSPBDV-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229910052696 pnictogen Inorganic materials 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000003463 sulfur Chemical class 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- DDJAGKOCVFYQOV-UHFFFAOYSA-N tellanylideneantimony Chemical compound [Te]=[Sb] DDJAGKOCVFYQOV-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
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- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B19/00—Selenium; Tellurium; Compounds thereof
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/305—Sulfides, selenides, or tellurides
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
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Description
R−Te−D
の一般構造を有する重水素化された有機テルロールであって、式中、Rが、1〜10個の炭素を直鎖、分枝又は環状の形態で有するアルキル基又はアルケニル基;C6-12の芳香族基;ジアルキルアミノ基;有機シリル基;及び有機ゲルミルからなる群より選択される重水素化された有機テルロールを含む。
(a)R−Te−R’
の一般構造を有する有機テルロールであって、式中、Rが、1〜10個の炭素を直鎖、分枝又は環状の形態で有するアルキル基又はアルケニル基;C6-12の芳香族基;ジアルキルアミノ基;有機シリル基;及び有機ゲルミルからなる群より選択され、R’が水素及び重水素からなる群より選択される有機テルロールと、
(b)R”2Te
の一般構造を有する組成物であって、式中、R”が水素及び重水素からなる群より選択される組成物と、
(c)六フッ化テルルと
からなる群より選択されるTe前駆体を堆積することによって調製される。
(a)R−Te−R’
の一般構造を有する有機テルロールであって、式中、Rが、1〜10個の炭素を直鎖、分枝又は環状の形態で有するアルキル基又はアルケニル基;C6-12の芳香族基;ジアルキルアミノ基;有機シリル基;及び有機ゲルミルからなる群より選択され、R’が水素及び重水素からなる群より選択される有機テルロールと、
(b)R”2Te
の一般構造を有する組成物であって、式中、R”が水素及び重水素からなる群より選択される組成物と、
(c)アンモニアと反応する六フッ化テルルと
からなる群より選択されるTe含有組成物を含むTe前駆体を堆積する工程;
(R1R2N)4Geの一般構造を有するアミノゲルマンを含むGe前駆体であって、式中、R1及びR2が1〜10個の炭素を直鎖、分枝又は環状の形態で有するアルキル基であるGe前駆体を堆積する工程;及び
(R1R2N)3Sbの一般構造を有するアミノスチバンを含むSb前駆体であって、式中、R1及びR2が1〜10個の炭素を直鎖、分枝又は環状の形態で有するアルキル基であるSb前駆体を堆積する工程
を含む。
R−Te−R’
の一般式を有し、式中、Rは、1〜10個の炭素を直鎖、分枝又は環状の形態で有するアルキル基又はアルケニル基、フェニルなどのC6-12の芳香族基、ジアルキルアミノ基、有機シリル基、又は有機ゲルミル基であり、R’は水素又は重水素である。
(R1R2N)4Ge及び(R1R2N)3Sb
の一般構造を有するアミノゲルマン及びアミノスチバンであり、式中、R1及びR2は独立して1〜10個の炭素を直鎖、分枝又は環状の形態で有するアルキル基である。
TeF6 + NH3 → [Te(NH2)n] + NH4F
200メッシュのテルル粉末6.4g(0.05mol)、ジエチルエーテル100ml及びヘキサン中2.5Mのn−ブチルリチウム20mlを250mlのフラスコに添加した。0℃で混合物を8時間撹拌した。テルルのすべての黒色粉末が見えなくなり、濁った色の沈殿を形成した。この混合物にトリメチルクロロシラン5.4g(0.05mol)を添加した。混合物を室温まで温めた。2時間撹拌した後、重水素化されたメタノール(MeOD)2.0g(0.06mol)をゆっくりと添加した。1時間撹拌した後、混合物を不活性雰囲気下で濾過した。溶媒及び副生成物のメトキシトリメチルシランを蒸留によって除去した。減圧蒸留によりn−ブチルテルロール−Dを得た。沸点は85℃/100mmHgである。
200メッシュのテルル粉末12.8g(0.10mol)、ジエチルエーテル250ml及びジエチルエーテル中2.0Mのt−ブチルマグネシウムクロリド溶液50mlを500mlのフラスコに添加した。室温で混合物を24時間撹拌した。テルルのすべての黒色粉末が見えなくなり、薄灰色の沈殿を形成した。混合物をドライアイスの浴で−50℃に冷却した。この混合物に重水素化されたエタノール(EtOD)10.0g(0.21mol)をゆっくりと添加した。混合物を室温まで温めた。2時間撹拌した後、混合物を不活性雰囲気下で濾過した。溶媒のエーテルを蒸留によって除去した。減圧蒸留によりt−ブチルテルロール−Dを得た。沸点は65℃/100mmHgである。
Claims (8)
- (a)テルル化重水素と、
(b)六フッ化テルルと
からなる群より選択されるTe前駆体から合成された、Te含有カルコゲニドの相変化材料。 - テルル化重水素を含むTe前駆体を堆積する工程;
(R1R2N)4Geの一般構造を有するアミノゲルマンを含むGe前駆体であって、式中、R1及びR2が1〜10個の炭素を直鎖、分枝又は環状の形態で有するアルキル基であるGe前駆体を堆積する工程;及び
(R1R2N)3Sbの一般構造を有するアミノスチバンを含むSb前駆体であって、式中、R1及びR2が1〜10個の炭素を直鎖、分枝又は環状の形態で有するアルキル基であるSb前駆体を堆積する工程
を含む、Te含有カルコゲニドの相変化材料を基材上に堆積する方法。 - 六フッ化テルルをアンモニアと反応させることによってアミノテルルを含むTe前駆体を堆積する工程;
(R1R2N)4Geの一般構造を有するアミノゲルマンを含むGe前駆体であって、式中、R1及びR2が1〜10個の炭素を直鎖、分枝又は環状の形態で有するアルキル基であるGe前駆体を堆積する工程;及び
(R1R2N)3Sbの一般構造を有するアミノスチバンを含むSb前駆体であって、式中、R1及びR2が1〜10個の炭素を直鎖、分枝又は環状の形態で有するアルキル基であるSb前駆体を堆積する工程
を含む、Te含有カルコゲニドの相変化材料を基材上に堆積する方法。 - 各堆積工程の後に水素又は水素プラズマを導入する工程をさらに含む、請求項2又は3に記載の方法。
- 前記3つの堆積工程の後に水素又は水素プラズマを導入する工程をさらに含む、請求項2又は3に記載の方法。
- 前記3つの堆積工程が連続して又は同時に実施される、請求項2又は3に記載の方法。
- 前記3つの堆積工程のうち任意の2つが同時に実施される、請求項2又は3に記載の方法。
- 前記の堆積が、ALD、CVD及びサイクリックCVDプロセスからなる群より選択されるプロセスによって実施される、請求項2又は3に記載の方法。
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US8377341B2 (en) | 2013-02-19 |
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TW200844084A (en) | 2008-11-16 |
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