JP5513707B2 - 半導体発光デバイスの相互接続 - Google Patents
半導体発光デバイスの相互接続 Download PDFInfo
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- JP5513707B2 JP5513707B2 JP2006279265A JP2006279265A JP5513707B2 JP 5513707 B2 JP5513707 B2 JP 5513707B2 JP 2006279265 A JP2006279265 A JP 2006279265A JP 2006279265 A JP2006279265 A JP 2006279265A JP 5513707 B2 JP5513707 B2 JP 5513707B2
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- metal layer
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- emitting device
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- 239000004065 semiconductor Substances 0.000 title claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 115
- 239000002184 metal Substances 0.000 claims description 115
- 238000000034 method Methods 0.000 claims description 38
- 238000007747 plating Methods 0.000 claims description 12
- 229910052737 gold Inorganic materials 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 150000002739 metals Chemical class 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 5
- 238000001459 lithography Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 description 25
- 230000008569 process Effects 0.000 description 16
- 239000010931 gold Substances 0.000 description 10
- 239000000758 substrate Substances 0.000 description 8
- 239000004593 Epoxy Substances 0.000 description 6
- 230000035882 stress Effects 0.000 description 6
- 239000010949 copper Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000005496 eutectics Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 238000001465 metallisation Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical group N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000005555 metalworking Methods 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 238000001429 visible spectrum Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical group [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910007116 SnPb Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 229910002056 binary alloy Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Chemical group 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/06102—Disposition the bonding areas being at different heights
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01046—Palladium [Pd]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/013—Alloys
- H01L2924/0132—Binary Alloys
- H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
71 n型コンタクト
72 p型コンタクト
73 基板
74 半導体発光デバイス層
75a〜75e 金属間相互接続
Claims (15)
- n型領域とp型領域との間に配置された発光層と、前記n型領域及びp型領域に電気的に接続されたコンタクトと、該コンタクトのうちの1つの上に形成された第1の金属層とを備える半導体発光デバイスを準備する段階と、
マウント上にリソグラフィーにより所定のパターンに形成される第2の金属層と、該第2の金属層を覆ってメッキされる第3の金属層とを備える前記マウントを準備する段階と、
メッキ後に前記第3の金属層をアニーリングする段階と、
前記第1、第2、及び第3の金属層の相互拡散を引き起こすことによって、前記半導体発光デバイスを前記マウントに物理的に接続する段階と、
を含み、
前記第3の金属層が、前記第2の金属層よりも厚く形成され、
前記第3の金属層が前記半導体発光デバイスの面積の少なくとも20%の横方向範囲を有し、
前記相互拡散を引き起こすことが、前記半導体発光デバイスを振動させること、及び圧力を前記半導体発光デバイスに印加することの一方又は双方を含む
ことを特徴とする方法。 - 前記第1及び第2の金属が各々Au、Cu、Ni、及びAlのうちの1つを含む請求項1に記載の方法。
- 前記第3の金属が、Au、Cu、Ni、及びAlのうちの1つを含む請求項1に記載の方法。
- 前記第1の金属層をリソグラフィーによりパターン形成し、所定のパターンを形成する段階を更に含む請求項1に記載の方法。
- 前記相互拡散を引き起こすことが、150〜600℃の周囲温度を提供することを含む請求項1に記載の方法。
- 前記第3の金属層の厚みが1〜50ミクロンである請求項1に記載の方法。
- 前記第3の金属層の厚みが5〜20ミクロンである請求項1に記載の方法。
- 前記第3の金属層が前記半導体発光デバイスの面積の少なくとも30%の横方向範囲を有する請求項1に記載の方法。
- 前記第3の金属層が前記半導体発光デバイスの面積の少なくとも40%の横方向範囲を有する請求項1に記載の方法。
- n型領域とp型領域との間に配置された発光層と、前記n型領域及びp型領域に電気的に接続されたコンタクトとを備える半導体発光デバイスを準備する段階と、
前記コンタクトのうちの1つの上に第1の金属層を所定のパターンに形成する段階と、
前記第1の金属層上に第2の金属層をメッキする段階と、
メッキ後に前記第2の金属層をアニーリングする段階と、
第3の金属層が上に形成されるマウントを準備する段階と、
前記第1、第2、及び第3の金属層の相互拡散を引き起こすことによって、前記半導体発光デバイスを前記マウントに物理的に接続する段階と、
を含み、
第2の金属層が、前記第1の金属層よりも厚く形成され、
前記第2の金属層が前記半導体発光デバイスの面積の少なくとも20%の横方向範囲を有し、
前記相互拡散を引き起こすことが、前記半導体発光デバイスを振動させること、及び圧力を前記半導体発光デバイスに印加することの一方又は双方を含む
ことを特徴とする方法。 - 前記第1及び第3の金属が各々Au、Cu、Ni、及びAlのうちの1つを含む請求項10に記載の方法。
- 前記第2の金属が、Au、Cu、Ni、及びAlのうちの1つを含む請求項10に記載の方法。
- 前記相互拡散を引き起こすことが、150〜600℃の周囲温度を提供することを含む請求項10に記載の方法。
- 前記第2の金属層の厚みが1〜50ミクロンである請求項10に記載の方法。
- 前記第2の金属層の厚みが5〜20ミクロンである請求項10に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/226,151 | 2005-09-13 | ||
US11/226,151 US7348212B2 (en) | 2005-09-13 | 2005-09-13 | Interconnects for semiconductor light emitting devices |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007081417A JP2007081417A (ja) | 2007-03-29 |
JP5513707B2 true JP5513707B2 (ja) | 2014-06-04 |
Family
ID=37648079
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006279265A Active JP5513707B2 (ja) | 2005-09-13 | 2006-09-13 | 半導体発光デバイスの相互接続 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7348212B2 (ja) |
EP (1) | EP1927142A1 (ja) |
JP (1) | JP5513707B2 (ja) |
CN (1) | CN101263614B (ja) |
TW (1) | TWI427815B (ja) |
WO (1) | WO2007031893A1 (ja) |
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US20070057271A1 (en) | 2007-03-15 |
US7348212B2 (en) | 2008-03-25 |
CN101263614A (zh) | 2008-09-10 |
WO2007031893A1 (en) | 2007-03-22 |
EP1927142A1 (en) | 2008-06-04 |
TWI427815B (zh) | 2014-02-21 |
US20080142833A1 (en) | 2008-06-19 |
CN101263614B (zh) | 2010-05-19 |
TW200802960A (en) | 2008-01-01 |
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