JP5506531B2 - 発光装置及びその製造方法 - Google Patents
発光装置及びその製造方法 Download PDFInfo
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- JP5506531B2 JP5506531B2 JP2010111302A JP2010111302A JP5506531B2 JP 5506531 B2 JP5506531 B2 JP 5506531B2 JP 2010111302 A JP2010111302 A JP 2010111302A JP 2010111302 A JP2010111302 A JP 2010111302A JP 5506531 B2 JP5506531 B2 JP 5506531B2
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- light
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 5
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- 238000013507 mapping Methods 0.000 description 4
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Description
前記発光素子の発光輝度に応じて前記素子搭載領域における前記発光素子の搭載位置を設定するステップと、設定された搭載位置に前記発光素子を搭載するステップと、を含むことを特徴とする発光装置の製造方法。
11 基板
12 ボンディングパッド
13 素子搭載領域
13A 平坦部
13B 凹部
13C 凹部
14 ダイアタッチ材
15 LED素子
16 ボンディングワイヤ
17 封止樹脂
18 外部端子
19 サーマルビア
Claims (8)
- 主面上に素子搭載領域を有する基板と、
前記基板の前記素子搭載領域に搭載された少なくとも1つの発光素子と、を含む発光装置であって、
前記発光素子から発せられた熱の前記基板を経由する放熱経路の熱抵抗が、前記素子搭載領域内における前記発光素子の搭載位置に応じて変化するように構成されていることを特徴とする発光装置。 - 前記基板には前記基板と熱伝導率が異なる部材が設けられ、
前記発光素子の搭載位置に応じて前記放熱経路に含まれる前記部材の体積が変化することを特徴とする請求項1に記載の発光装置。 - 前記素子搭載領域には、前記基板の主面上に設けられた平坦部と、前記基板の主面から前記基板の裏面に向けて凹んだ凹部とが設けられ、
前記発光素子は、前記平坦部から前記凹部に亘る素子搭載表面が平坦となるように前記平坦部と前記凹部を覆うダイアタッチ材を介して前記基板に接合され、
前記ダイアタッチ材は、前記基板の熱伝導率とは異なる熱伝導率を有していることを特徴とする請求項1に記載の発光装置。 - 前記凹部は、前記平坦部に隣接し且つ前記基板の主面から前記凹部の底面に向けて傾斜している側面を有し、前記側面の傾斜角度は前記基板の主面に対して45°未満であることを特徴とする請求項3に記載の発光装置。
- 前記発光装置は複数の発光素子を有し、前記複数の発光素子の各々は、前記素子搭載領域内の、前記複数の発光素子の各々の発光輝度と目標輝度とが一致するように決定された位置に搭載されていることを特徴とする請求項1乃至4のいずれか1つに記載の発光装置。
- 前記素子搭載領域は、階段状の溝からなる凹部を有しており、
前記発光素子は、長方形であり且つ前記凹部に充填されたダイアタッチ材を介して前記基板に接合され、
前記発光装置は、前記ダイアタッチ材の充填量および前記基板に対する前記発光素子の搭載角度に応じて前記発光素子の直下の前記基板厚みが変化するように構成されていることを特徴とする請求項1又は2に記載の発光装置。 - 前記発光装置は複数の発光素子を有しており、前記複数の発光素子の各々は、前記素子搭載領域内において、前記複数の発光素子の各々の発光輝度と目標輝度とが一致するように決定された搭載角度で搭載されていることを特徴とする請求項6に記載の発光装置。
- 所定条件下における発光素子の発光輝度を得るステップと、
素子搭載領域内における前記発光素子の搭載位置に応じて前記発光素子から発せられる熱の放熱経路の熱抵抗が変化するように構成されている基板を用意するステップと、
前記発光素子の発光輝度に応じて前記素子搭載領域における前記発光素子の搭載位置を設定するステップと、
設定された搭載位置に前記発光素子を搭載するステップと、を含むことを特徴とする発光装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2010111302A JP5506531B2 (ja) | 2010-05-13 | 2010-05-13 | 発光装置及びその製造方法 |
US13/104,259 US8659047B2 (en) | 2010-05-13 | 2011-05-10 | Light emitting device and manufacturing method thereof |
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JP2010111302A JP5506531B2 (ja) | 2010-05-13 | 2010-05-13 | 発光装置及びその製造方法 |
Publications (2)
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JP2011238879A JP2011238879A (ja) | 2011-11-24 |
JP5506531B2 true JP5506531B2 (ja) | 2014-05-28 |
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JP2010111302A Active JP5506531B2 (ja) | 2010-05-13 | 2010-05-13 | 発光装置及びその製造方法 |
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JP (1) | JP5506531B2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013247340A (ja) * | 2012-05-29 | 2013-12-09 | Toyoda Gosei Co Ltd | 発光装置 |
JP6056213B2 (ja) * | 2012-06-26 | 2017-01-11 | 東芝ライテック株式会社 | 発光モジュール及び照明装置 |
CN103344662B (zh) * | 2013-07-08 | 2016-03-30 | 上海大学 | 半导体器件瞬态热测试装置 |
CN103344902B (zh) * | 2013-07-10 | 2016-02-17 | 上海大学 | 一种led瞬态热阻测量*** |
CN106684226A (zh) * | 2016-12-09 | 2017-05-17 | 青岛海信电器股份有限公司 | 一种双色芯片led***和双色芯片led |
JP6583247B2 (ja) | 2016-12-21 | 2019-10-02 | 日亜化学工業株式会社 | 発光装置 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
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US6501103B1 (en) * | 2001-10-23 | 2002-12-31 | Lite-On Electronics, Inc. | Light emitting diode assembly with low thermal resistance |
JP2007096079A (ja) * | 2005-09-29 | 2007-04-12 | Stanley Electric Co Ltd | 半導体発光装置 |
JP4971623B2 (ja) | 2005-11-04 | 2012-07-11 | コーア株式会社 | Led光源装置の製造方法 |
US8044418B2 (en) * | 2006-07-13 | 2011-10-25 | Cree, Inc. | Leadframe-based packages for solid state light emitting devices |
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2010
- 2010-05-13 JP JP2010111302A patent/JP5506531B2/ja active Active
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2011
- 2011-05-10 US US13/104,259 patent/US8659047B2/en active Active
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Publication number | Publication date |
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JP2011238879A (ja) | 2011-11-24 |
US20110278602A1 (en) | 2011-11-17 |
US8659047B2 (en) | 2014-02-25 |
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