JP5501457B2 - 太陽電池製造装置及び太陽電池製造方法 - Google Patents
太陽電池製造装置及び太陽電池製造方法 Download PDFInfo
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- 229910004613 CdTe Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
- H01L21/2236—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase from or into a plasma phase
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Description
前記イオンガンは、前記イオン照射面から基板に向かう側を下として、不純物のイオンを含むプラズマを発生し得るプラズマ発生室と、このプラズマ発生室の下端部に設けられてイオン照射面を構成するグリッド板とを備え、このグリッド板に複数の透孔が形成され、この透孔が形成された領域は基板面積より大きく、このグリッド板を所定電圧に保持してプラズマ発生室内に発生させたプラズマ中の不純物のイオンが各透孔を通して下方に引き出されるように構成され、前記搬送手段は、イオン照射面に平行な同一平面で回転自在であり、周方向に所定間隔で複数枚の基板を保持し得る基板用の回転テーブルであることを特徴とする。
Claims (2)
- 大気雰囲気と真空雰囲気とを切り替えて基板の出し入れを可能とするロードロック室と、真空雰囲気にて太陽電池用の基板に対し、pn接合形成用の不純物のイオンを導入する処理室と、ロードロック室と処理室との間で基板を搬送する搬送手段が内蔵された搬送室と、を備え、前記不純物のイオンの導入がイオンガンからの不純物のイオンの照射にて行われ、イオンガンは、そのイオン照射面が処理室に搬送されてくる基板に対向するように設けられ、
前記イオンガンは、前記イオン照射面から基板に向かう側を下として、不純物のイオンを含むプラズマを発生し得るプラズマ発生室と、このプラズマ発生室の下端部に設けられてイオン照射面を構成するグリッド板とを備え、このグリッド板に複数の透孔が形成され、この透孔が形成された領域は基板面積より大きく、このグリッド板を所定電圧に保持してプラズマ発生室内に発生させたプラズマ中の不純物のイオンが各透孔を通して下方に引き出されるように構成され、
前記搬送手段は、イオン照射面に平行な同一平面で回転自在であり、周方向に所定間隔で複数枚の基板を保持し得る基板用の回転テーブルであり、
前記イオン照射面と基板との間に位置して基板を局所的に遮蔽するマスクと、このマスクをイオン照射面と基板との間の遮蔽位置に進退自在に移送する移送手段とを更に備え、前記移送手段は、基板用の回転テーブル上でこの基板用の回転テーブルの回転中心を中心として回転自在であり、周方向に所定間隔で複数枚のマスクを保持し得るマスク用の回転テーブルであることを特徴とする太陽電池製造装置。 - テクスチャ構造を有する太陽電池用の基板に対し、この基板に対向配置されたイオンガンのイオン照射面から、P、As、Sb、Bi、B、Al、Ga及びInの中から選択された不純物のイオンを照射するイオン照射処理工程と、イオン照射処理工程により基板内に生じた欠陥をアニール処理にて修復する欠陥修復工程と、このアニール処理により不純物を拡散させる不純物拡散工程と、を含み、
前記イオンガンは、前記イオン照射面から基板に向かう側を下として、不純物のイオンを含むプラズマを発生し得るプラズマ発生室と、このプラズマ発生室の下端部に設けられてイオン照射面を構成するグリッド板とを備え、このグリッド板に複数の透孔が形成され、この透孔が形成された領域は基板面積より大きく、このグリッド板を所定電圧に保持してプラズマ発生室内に発生させたプラズマ中の不純物のイオンが各透孔を通して下方に引き出されるように構成され、
前記搬送手段は、イオン照射面に平行な同一平面で回転自在であり、周方向に所定間隔で複数枚の基板を保持し得る基板用の回転テーブルであり、
前記イオン照射処理工程は、イオン照射面と基板との間に基板を局所的に遮蔽するマスクを移送し、このマスクを用いて基板の所定箇所にイオンを照射する工程であり、前記マスクを移送する移送手段は、基板用の回転テーブル上でこの基板用の回転テーブルの回転中心を中心として回転自在であり、周方向に所定間隔で複数枚のマスクを保持し得るマスク用の回転テーブルであることを特徴とする太陽電池の製造方法。
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JP2012519257A JP5501457B2 (ja) | 2010-06-10 | 2011-06-08 | 太陽電池製造装置及び太陽電池製造方法 |
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JP2010133319 | 2010-06-10 | ||
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PCT/JP2011/003243 WO2011155199A1 (ja) | 2010-06-10 | 2011-06-08 | 太陽電池製造装置及び太陽電池製造方法 |
JP2012519257A JP5501457B2 (ja) | 2010-06-10 | 2011-06-08 | 太陽電池製造装置及び太陽電池製造方法 |
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US (1) | US8932896B2 (ja) |
JP (1) | JP5501457B2 (ja) |
KR (1) | KR101456842B1 (ja) |
CN (1) | CN102934206B (ja) |
DE (1) | DE112011101956T5 (ja) |
TW (1) | TWI482303B (ja) |
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US20130192761A1 (en) * | 2012-01-31 | 2013-08-01 | Joseph Yudovsky | Rotary Substrate Processing System |
JP5892802B2 (ja) * | 2012-02-09 | 2016-03-23 | 住友重機械工業株式会社 | イオン注入方法、搬送容器及びイオン注入装置 |
FR3005202B1 (fr) | 2013-04-30 | 2016-10-14 | Commissariat Energie Atomique | Procede de formation d'une zone implantee pour un transistor a heterojonction de type normalement bloque |
CN115799364B (zh) | 2023-02-07 | 2023-05-26 | 天合光能股份有限公司 | 一种太阳能电池 |
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JPH0661515A (ja) * | 1991-12-27 | 1994-03-04 | Rudolf Hezel | 太陽電池及びその製造方法 |
JPH08213339A (ja) * | 1995-02-02 | 1996-08-20 | Hitachi Ltd | イオン注入方法およびその装置 |
JP2000011905A (ja) * | 1998-06-19 | 2000-01-14 | Japan Aviation Electronics Ind Ltd | イオンガン用グリッド |
JP2001267314A (ja) * | 2000-03-17 | 2001-09-28 | Sony Corp | 半導体装置およびその製造方法 |
WO2005119745A1 (ja) * | 2004-06-04 | 2005-12-15 | Matsushita Electric Industrial Co., Ltd. | 不純物導入方法 |
JP2007023380A (ja) * | 2005-07-19 | 2007-02-01 | Applied Materials Inc | ハイブリッドpvd−cvdシステム |
JP2009283277A (ja) * | 2008-05-22 | 2009-12-03 | Renesas Technology Corp | 半導体装置の製造方法 |
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US8765583B2 (en) * | 2011-02-17 | 2014-07-01 | Varian Semiconductor Equipment Associates, Inc. | Angled multi-step masking for patterned implantation |
US9437392B2 (en) * | 2011-11-02 | 2016-09-06 | Varian Semiconductor Equipment Associates, Inc. | High-throughput ion implanter |
US8507298B2 (en) * | 2011-12-02 | 2013-08-13 | Varian Semiconductor Equipment Associates, Inc. | Patterned implant of a dielectric layer |
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2011
- 2011-06-08 US US13/696,880 patent/US8932896B2/en active Active
- 2011-06-08 CN CN201180028449.3A patent/CN102934206B/zh active Active
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- 2011-06-08 JP JP2012519257A patent/JP5501457B2/ja not_active Expired - Fee Related
- 2011-06-08 WO PCT/JP2011/003243 patent/WO2011155199A1/ja active Application Filing
- 2011-06-08 KR KR1020137000150A patent/KR101456842B1/ko active IP Right Grant
- 2011-06-10 TW TW100120351A patent/TWI482303B/zh active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
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JPS61188845A (ja) * | 1985-02-15 | 1986-08-22 | Matsushita Electronics Corp | イオン注入装置 |
JPH0661515A (ja) * | 1991-12-27 | 1994-03-04 | Rudolf Hezel | 太陽電池及びその製造方法 |
JPH08213339A (ja) * | 1995-02-02 | 1996-08-20 | Hitachi Ltd | イオン注入方法およびその装置 |
JP2000011905A (ja) * | 1998-06-19 | 2000-01-14 | Japan Aviation Electronics Ind Ltd | イオンガン用グリッド |
JP2001267314A (ja) * | 2000-03-17 | 2001-09-28 | Sony Corp | 半導体装置およびその製造方法 |
WO2005119745A1 (ja) * | 2004-06-04 | 2005-12-15 | Matsushita Electric Industrial Co., Ltd. | 不純物導入方法 |
JP2007023380A (ja) * | 2005-07-19 | 2007-02-01 | Applied Materials Inc | ハイブリッドpvd−cvdシステム |
JP2009283277A (ja) * | 2008-05-22 | 2009-12-03 | Renesas Technology Corp | 半導体装置の製造方法 |
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TWI482303B (zh) | 2015-04-21 |
WO2011155199A1 (ja) | 2011-12-15 |
KR101456842B1 (ko) | 2014-11-04 |
KR20130031877A (ko) | 2013-03-29 |
CN102934206B (zh) | 2015-08-05 |
TW201214739A (en) | 2012-04-01 |
DE112011101956T5 (de) | 2013-05-02 |
JPWO2011155199A1 (ja) | 2013-08-01 |
US20130052771A1 (en) | 2013-02-28 |
US8932896B2 (en) | 2015-01-13 |
CN102934206A (zh) | 2013-02-13 |
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