JP5493549B2 - Light emitting device and manufacturing method thereof - Google Patents

Light emitting device and manufacturing method thereof Download PDF

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JP5493549B2
JP5493549B2 JP2009177611A JP2009177611A JP5493549B2 JP 5493549 B2 JP5493549 B2 JP 5493549B2 JP 2009177611 A JP2009177611 A JP 2009177611A JP 2009177611 A JP2009177611 A JP 2009177611A JP 5493549 B2 JP5493549 B2 JP 5493549B2
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light emitting
emitting device
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JP2011035040A (en
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卓史 杉山
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Nichia Corp
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    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
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    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H01L2924/01—Chemical elements
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Description

本発明は、表示装置、照明器具、ディスプレイ、液晶ディスプレイのバックライト光源などに利用可能な発光装置に関し、特に、薄型／小型タイプで光の取り出し効率に優れ、歩留まり良く得られる発光装置及びその製造方法に関する。   The present invention relates to a light-emitting device that can be used for a display device, a lighting fixture, a display, a backlight light source of a liquid crystal display, and the like. Regarding the method.

近年、電子機器の小型化・軽量化に伴い、それらに搭載される発光装置（発光ダイオード）も小型化されたものが種々開発されている。これらの発光装置は、例えば、絶縁基板の両面にそれぞれ形成された一対の金属導体パターンが形成された両面スルーホールプリント基板上に発光素子を載置し、ワイヤなどを用いて金属導体パターンと発光素子とを電気的に導通させるような構造を有している。   In recent years, along with the downsizing and weight reduction of electronic devices, various types of light emitting devices (light emitting diodes) mounted thereon have been developed. In these light emitting devices, for example, a light emitting element is placed on a double-sided through-hole printed board on which a pair of metal conductor patterns formed on both sides of an insulating substrate is formed, and light is emitted from the metal conductor pattern using a wire or the like. It has a structure for electrically connecting the element.

しかしながら、このような発光装置は、両面スルーホールプリント基板を使用することが必須条件であり、この両面スルーホールプリント基板が少なくとも０．１ｍｍ程度以上の厚みがあるため、表面実装型発光装置の徹底した薄型化を阻害する要因となっている。そのため、このようなプリント基板を使用しない構造の発光装置が開発されている（例えば特許文献１）。   However, it is essential for such a light-emitting device to use a double-sided through-hole printed circuit board, and since this double-sided through-hole printed circuit board has a thickness of at least about 0.1 mm, the surface-mount type light-emitting device is thoroughly implemented. This is a factor that hinders the reduction in thickness. Therefore, a light emitting device having a structure that does not use such a printed circuit board has been developed (for example, Patent Document 1).

特開２００５−７９３２９号公報JP 2005-79329 A

特許文献１に開示されている発光装置は、基板に蒸着などによって薄い金属膜を形成し、これを電極とし、発光素子とともに透光性樹脂で封止することで、従来の表面実装型の発光装置に比べて薄型化が可能となっている。   The light-emitting device disclosed in Patent Document 1 forms a thin metal film on a substrate by vapor deposition or the like, uses this as an electrode, and seals it with a light-transmitting resin together with a light-emitting element. Thinning is possible compared to the device.

しかしながら、透光性樹脂のみを用いているため、光が発光素子から下面方向に抜けてしまい、光の取り出し効率が低下しやすい。擂鉢状の金属膜を設けて光を反射させるような構造も開示されているが、このような金属膜を設けるには基板に凹凸を設ける必要がある。そうすると、発光装置が小型化されているためこの凹凸も極めて微細なものになり、加工が困難になるだけでなく、凹凸構造により基板の剥離時に破損しやすくなり歩留まりが低下するなどの問題が生じやすい。また、ディスプレイなどに用いる場合、透光性樹脂のみを用いているとコントラストが悪くなり易い。   However, since only the translucent resin is used, the light escapes from the light emitting element in the lower surface direction, and the light extraction efficiency tends to be lowered. Although a structure in which a mortar-shaped metal film is provided to reflect light is disclosed, in order to provide such a metal film, it is necessary to provide unevenness on the substrate. Then, since the light emitting device is miniaturized, the unevenness becomes extremely fine, which makes it difficult to process, and the uneven structure easily breaks when the substrate is peeled off, resulting in a decrease in yield. Cheap. Moreover, when using for a display etc., when only translucent resin is used, contrast will deteriorate easily.

また、近年、更なる高出力化が求められており、発光素子の出力が向上される傾向にあるが、そのような高出力の発光を得る際に発生する熱量も増大化している。そのため、発光装置を構成する各部材の耐熱性が要求されている。   In recent years, there has been a demand for higher output and the output of the light emitting element tends to be improved. However, the amount of heat generated when obtaining such high output light emission is also increasing. Therefore, the heat resistance of each member which comprises a light-emitting device is requested | required.

以上の課題を解決するために、本発明の半導体発光素子の製造方法は、ステンレスからなる支持基板上に、複数の開口部を有する保護膜を形成後、開口部内に、Ａｕとの拡散係数が支持基板中の金属よりも小さい金属を含む金属層を形成し、その上にＡｕを主成分とする第１層及び該第１層上に積層されＡｕと異なる金属を主成分とする第２層とを有する導電部材を複数個所形成する第１の工程と、保護膜を除去後、複数の導電部材の間に露出される支持基板上に、遮光性樹脂からなる基体を設ける第２の工程と、導電部材又は基体の上面に、金属を含有している接着部材を介して発光素子を載置して、金属層の融点よりも低い温度で加熱して接着部材を溶融させる第３の工程と、発光素子を透光性の封止部材で被覆する第４の工程と、金属層と第１の層との間で剥離することで支持基板を除去し、除去することで、基体の下面を導電部材の下面よりも下側に突出させた後、発光装置を個片化する第５の工程と、を有することを特徴とする。これにより、薄型で発光効率が高く、耐熱性に優れた発光装置を歩留まり良く得ることができる。
In order to solve the above-described problems, the method for manufacturing a semiconductor light emitting device of the present invention has a diffusion coefficient with Au in the opening after a protective film having a plurality of openings is formed on a support substrate made of stainless steel. A metal layer containing a metal smaller than the metal in the support substrate is formed, and a first layer containing Au as a main component and a second layer containing a metal different from Au stacked on the first layer as a main component. And a second step of providing a base made of a light-shielding resin on a support substrate exposed between the plurality of conductive members after removing the protective film, A third step of placing the light emitting element on the upper surface of the conductive member or the base via the adhesive member containing metal and heating the adhesive member at a temperature lower than the melting point of the metal layer; A fourth step of covering the light emitting element with a translucent sealing member, and a metal The support substrate is removed by peeling between the first layer and the first layer, and the lower surface of the base is protruded downward from the lower surface of the conductive member by removing, and then the light emitting device is separated. And a fifth step. Accordingly, a light-emitting device that is thin, has high light emission efficiency, and excellent heat resistance can be obtained with high yield.

本発明の請求項７に記載の発光装置は、請求項１乃至請求項６のいずれか１項の発光装置の製造方法によって得られる。   The light emitting device according to claim 7 of the present invention is obtained by the method for manufacturing a light emitting device according to any one of claims 1 to 6.

本発明により、薄型の発光装置を、歩留まり良く容易に形成させることができる。また、薄型の発光装置であっても、発光素子からの光が下面側から漏れ出すのを防ぐことができるため、光の取り出し効率が向上された発光装置や、コントラストが向上された発光装置が得られる。また、耐熱性に優れた発光装置を容易に得ることができる。   According to the present invention, a thin light-emitting device can be easily formed with high yield. In addition, even a thin light-emitting device can prevent light from the light-emitting element from leaking from the lower surface side, so that a light-emitting device with improved light extraction efficiency and a light-emitting device with improved contrast are available. can get. In addition, a light emitting device having excellent heat resistance can be easily obtained.

図１Ａは、本発明係る発光装置の全体及び内部を示す斜視図である。FIG. 1A is a perspective view showing the whole and the inside of a light emitting device according to the present invention. 図１Ｂは、図１Ａに係る発光装置のＡ−Ａ’断面における断面図である。1B is a cross-sectional view of the light emitting device according to FIG. 1A taken along the line A-A ′. 図１Ｃは、本発明に係る発光装置の製造方法を説明する工程図である。FIG. 1C is a process diagram illustrating a method for manufacturing a light emitting device according to the present invention. 図１Ｄは、本発明に係る発光装置に製造方法を説明する工程図である。FIG. 1D is a process diagram illustrating a method for manufacturing a light-emitting device according to the present invention. 図２Ａは、本発明に係る発光装置の製造方法を説明する工程図である。FIG. 2A is a process diagram illustrating a method for manufacturing a light-emitting device according to the present invention. 図２Ｂは、本発明に係る発光装置に製造方法を説明する工程図である。FIG. 2B is a process diagram illustrating a method for manufacturing the light emitting device according to the present invention. 図２Ｃは、本発明に係る発光装置の断面図及び部分拡大図である。FIG. 2C is a cross-sectional view and a partially enlarged view of the light emitting device according to the present invention.

本発明を実施するための最良の形態を、以下に図面を参照しながら説明する。ただし、以下に示す形態は、本発明の発光装置及びその製造方法を例示するものであって、本発明を以下の形態に限定するものではない。   The best mode for carrying out the present invention will be described below with reference to the drawings. However, the form shown below illustrates the light emitting device of the present invention and the manufacturing method thereof, and the present invention is not limited to the following form.

また、本明細書は、特許請求の範囲に示される部材を、実施の形態の部材に限定するものでは決してない。特に、実施の形態に記載されている構成部品の寸法、材質、形状、その相対的配置等は、限定的な記載がない限りは、本発明の範囲をそれのみに限定する趣旨ではなく、単なる説明例にすぎない。尚、各図面が示す部材の大きさや位置関係等は、説明を明確にするため誇張していることがある。さらに以下の説明において、同一の名称、符号については同一もしくは同質の部材を示しており、詳細説明を適宜省略する。   Moreover, this specification does not limit the member shown by the claim to the member of embodiment. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the components described in the embodiments are not intended to limit the scope of the present invention only to the extent that there is no limited description, It is just an example. It should be noted that the size and positional relationship of the members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, in the following description, the same name and symbol indicate the same or the same members, and detailed description thereof will be omitted as appropriate.

＜実施の形態１＞
本実施の形態の発光装置１００を、図１Ａ、図１Ｂに示す。図１Ａは発光装置１００の斜視図、図１Ｂは、図１Ａに示す発光装置１００のＡ−Ａ’断面における断面図を示す。 <Embodiment 1>
A light-emitting device 100 of the present embodiment is shown in FIGS. 1A and 1B. 1A is a perspective view of the light-emitting device 100, and FIG. 1B is a cross-sectional view taken along the line AA ′ of the light-emitting device 100 shown in FIG. 1A.

本実施の形態において、発光装置１００は、発光素子１０２と、発光素子１０２と電気的に接続される上面を有する一対の導電部材１０１と、導電部材１０１の外縁と接して保持する基体１０３とを有している。基体１０３は、遮光性を有する各種充填材等を添加することで発光素子１０２からの光を遮光可能な樹脂であり、底面部１０３ａと側壁１０３ｂからなる凹部Ｓを有し、この凹部Ｓの底面において、一対の導電部材１０１の上面の一部が露出している。導電部材１０１の下面は、基体１０３の下面（裏面）から露出されている。発光素子１０２と導電部材１０１とは、導電性ワイヤ１０５を介して電気的に接続されており、封止部材１０６がこれらの電子部品を被覆するよう、凹部Ｓ内に設けられている。   In this embodiment mode, the light-emitting device 100 includes a light-emitting element 102, a pair of conductive members 101 having an upper surface that is electrically connected to the light-emitting element 102, and a base 103 that is held in contact with an outer edge of the conductive member 101. Have. The base 103 is a resin capable of blocking light from the light emitting element 102 by adding various light-shielding fillers, etc., and has a recess S composed of a bottom surface portion 103a and a side wall 103b. In FIG. 2, a part of the upper surface of the pair of conductive members 101 is exposed. The lower surface of the conductive member 101 is exposed from the lower surface (back surface) of the base body 103. The light emitting element 102 and the conductive member 101 are electrically connected via a conductive wire 105, and the sealing member 106 is provided in the recess S so as to cover these electronic components.

このような発光装置１００は、以下のような製造方法によって得ることができる。図１Ｃ、図１Ｄは、発光装置の集合体１０００を形成する工程を説明する図であり、この集合体１０００を切断して個片化することで、図１Ａに示す発光装置１００を得ることができる。   Such a light emitting device 100 can be obtained by the following manufacturing method. 1C and 1D are diagrams illustrating a process of forming a light emitting device assembly 1000, and the light emitting device 100 illustrated in FIG. 1A can be obtained by cutting the assembly 1000 into pieces. it can.

１．第１の工程
まず、図１Ｃ（ａ）に示すように、ステンレスからなる平板状の支持基板１０７０を用意する。この支持基板の上面に、金属層１０８０を形成する。金属層は、Ａｕとの拡散係数が支持基板中の金属よりも小さい金属を含むものであり、鍍金、蒸着、スパッタ等の方法を用いることができ、支持基板の上面のほぼ全面に均一な膜厚で設けるのが好ましい。 1. First Step First, as shown in FIG. 1C (a), a flat support substrate 1070 made of stainless steel is prepared. A metal layer 1080 is formed on the upper surface of the support substrate. The metal layer contains a metal whose diffusion coefficient with Au is smaller than that of the metal in the support substrate, and can use a method such as plating, vapor deposition, sputtering, etc., and a uniform film on almost the entire upper surface of the support substrate. It is preferable to provide the thickness.

次いで、この金属層の表面に支持基板の表面に保護膜としてレジスト１０９０を塗布する。このレジスト１０９０の厚みによって後に形成される導電部材の厚みを調整することができる。尚、ここでは、支持基板１０７０の上面（導電部材を形成する側の面）にのみレジスト１０９０を設けているが、更に、下面（反対側の面）に形成してもよい。これにより、後述の鍍金によって支持基板の下面側に導電部材が形成されるのを防ぐことができる。   Next, a resist 1090 is applied to the surface of the metal layer as a protective film on the surface of the support substrate. The thickness of the conductive member formed later can be adjusted by the thickness of the resist 1090. Here, the resist 1090 is provided only on the upper surface (surface on which the conductive member is formed) of the support substrate 1070, but may be formed on the lower surface (opposite surface). Thereby, it can prevent that a conductive member is formed in the lower surface side of a support substrate by the below-mentioned plating.

尚、用いる保護膜（レジスト）はフォトリソグラフィによって形成されるレジストの場合、ポジ型、ネガ型のいずれを用いてもよい。ここでは、ポジ型のレジストを用いる方法について説明するが、ポジ型、ネガ型を組み合わせて用いてもよい。また、スクリーン印刷により形成させるレジストや、シート状のレジストを貼り付けるなどの方法も用いることができる。   The protective film (resist) to be used may be either a positive type or a negative type in the case of a resist formed by photolithography. Although a method using a positive resist is described here, a positive resist and a negative resist may be used in combination. In addition, a method of attaching a resist formed by screen printing or a sheet-like resist can be used.

塗布したレジストを乾燥させた後、その上部に開口部を有するマスク１１００を直接又は間接的に配置させて、図中の矢印のように紫外線を照射して露光する。ここで用いる紫外線は、レジスト１０９０の感度等によって適した波長を選択することができる。その後、エッチング剤で処理することで図１Ｃ（ｂ）に示すように開口部Ｋを有する保護膜１０９０が形成される。ここで、必要であれば酸活性処理などを行ってもよい。   After the applied resist is dried, a mask 1100 having an opening on the top is directly or indirectly disposed, and exposure is performed by irradiating ultraviolet rays as indicated by arrows in the drawing. For the ultraviolet rays used here, a wavelength suitable for the sensitivity of the resist 1090 and the like can be selected. Thereafter, a protective film 1090 having an opening K is formed as shown in FIG. Here, if necessary, acid activation treatment or the like may be performed.

更に、金属層を設けた後、又はレジストを設けた後に、後述の第３の工程の加熱温度よりも高い温度で加熱する工程を行うのが好ましい。好ましくは、レジストを設ける前に行う。また、加熱温度は、好ましくは、３４０〜５００℃、更に好ましくは３８０〜４２０℃の範囲である。これにより、金属層と支持基板とを合金化、又は密着性を向上させることがで、その結果、導電部材と金属層との密着性よりも高い密着性とすることができ、支持基板を除去する際に、導電部材と金属層との間で剥離し易くすることができ、歩留まりよく発光装置を得ることができる。   Furthermore, after providing the metal layer or after providing the resist, it is preferable to perform a step of heating at a temperature higher than the heating temperature of the third step described later. Preferably, it is performed before providing the resist. The heating temperature is preferably in the range of 340 to 500 ° C, more preferably 380 to 420 ° C. Thereby, the metal layer and the support substrate can be alloyed or the adhesion can be improved, and as a result, the adhesion can be higher than the adhesion between the conductive member and the metal layer, and the support substrate can be removed. In this case, separation between the conductive member and the metal layer can be facilitated, and a light-emitting device can be obtained with high yield.

次いで、金（Ａｕ）を主成分とする第１層と、更にその上にＡｕと異なる金属を主成分とする第２層とを鍍金により形成することで、図１Ｃ（ｃ）に示すように保護膜１０９０の開口部Ｋ内に導電部材１０１０を形成させる。このとき、鍍金条件を調整することでレジスト１０９０の膜厚よりも厚くなるように鍍金することができ、これにより導電部材を保護膜の上面にまで形成させ、図１Ａに示すような側面に突起部有する導電部材を形成させることができる。   Next, as shown in FIG. 1C (c), a first layer mainly composed of gold (Au) and a second layer mainly composed of a metal different from Au are formed thereon by plating. A conductive member 1010 is formed in the opening K of the protective film 1090. At this time, the plating condition can be adjusted so that the thickness of the resist 1090 is larger than that of the resist 1090, whereby the conductive member is formed even on the upper surface of the protective film, and the protrusion is formed on the side surface as shown in FIG. 1A. A conductive member having a part can be formed.

鍍金方法としては、用いる金属によって、又は目的の膜厚や平坦度に応じて適宜選択することができ、電解鍍金、無電解鍍金を用いることができる。特に、電解鍍金を用いるのが好ましく、これによりレジスト（保護膜）を除去し易く、導電部材を均一な形状で形成し易くなる。また、最上層（例えばＡｇ）との密着性を向上させるため、その下に形成されている第２層として、Ｎｉ（又はＣｕ）の上にさらにストライク鍍金によって例えばＡｕなど形成させた２層からなる第２層とするのが好ましい。   As a plating method, it can select suitably according to the metal to be used or according to the target film thickness and flatness, and an electrolytic plating and an electroless plating can be used. In particular, it is preferable to use electrolytic plating, which makes it easy to remove the resist (protective film) and to form the conductive member in a uniform shape. Further, in order to improve the adhesion with the uppermost layer (for example, Ag), as a second layer formed under the upper layer (for example, Ag), two layers formed on the Ni (or Cu), for example, Au by strike plating are used. It is preferable to use the second layer.

鍍金後、保護膜１０９０を洗浄して除去することで、図１Ｃ（ｄ）に示すように互いに離間する導電部材が複数箇所に形成される。   After plating, the protective film 1090 is washed and removed, thereby forming conductive members spaced apart from each other as shown in FIG. 1C (d).

２．第２の工程
次いで、図１Ｄ（ａ）に示すように、発光素子からの光を反射可能な遮光性樹脂からなる基体１０３０を形成する。ここでは、導電部材１０１０の間に基体の底面部１０３０ａ及び基体の側壁１０３０ｂを同時に形成しているが、それぞれ別工程で形成してもよく、その場合、同一の遮光性樹脂を用いるのが好ましいが、目的や用途に応じて、異なる遮光性樹脂を用いても構わない。 2. Second Step Next, as shown in FIG. 1D (a), a base body 1030 made of a light shielding resin capable of reflecting light from the light emitting element is formed. Here, the base portion 1030a of the base and the side wall 1030b of the base are formed at the same time between the conductive members 1010. However, they may be formed in separate steps, and in that case, it is preferable to use the same light-shielding resin. However, different light-shielding resins may be used depending on the purpose and application.

基体の形成方法は、射出成形、トランスファモールド、圧縮成型等の方法を用いることができる。例えばトランスファモールドにより基体１０３０を形成する場合、複数の導電部材を形成した支持基板を、上型及び下型からなる金型の内に挟み込むようにセットする。このとき、離型シートなどを介して金型内にセットしてもよい。金型を内には基体の原料である樹脂ペレットが挿入されており、支持基板と樹脂ペレットとを加熱する。樹脂ペレット溶融後、加圧して金型内に充填する。加熱温度や加熱時間、また圧力等については用いる樹脂の組成等に応じて適宜調整することができる。硬化後金型から取り出し、図１Ｄ（ａ）に示す成型品を得ることができる。   As a method for forming the substrate, methods such as injection molding, transfer molding, and compression molding can be used. For example, when the base 1030 is formed by transfer molding, the support substrate on which a plurality of conductive members are formed is set so as to be sandwiched in a mold composed of an upper mold and a lower mold. At this time, you may set in a metal mold | die via a release sheet | seat. Resin pellets, which are base materials, are inserted into the mold, and the support substrate and the resin pellets are heated. After melting the resin pellets, pressurize and fill the mold. The heating temperature, heating time, pressure, and the like can be appropriately adjusted according to the composition of the resin used. It can take out from the metal mold | die after hardening and the molded article shown to FIG. 1D (a) can be obtained.

３．第３の工程
次いで、図１Ｄ（ｂ）に示すように、基体の側壁１０３０ｂに囲まれた導電部材１０１０上に、金属を含有している接着部材（図示せず）を用いて発光素子１０２０を接合し、導電性ワイヤ１０５０を用いて発光素子の電極と導電部材１０１０とを接続する。尚、ここでは、同一面側に正負電極を有する発光素子を用いているが、正負電極が異なる面に形成されている発光素子を用いることもできる。 3. Third Step Next, as shown in FIG. 1D (b), the light emitting element 1020 is formed on the conductive member 1010 surrounded by the side wall 1030b of the base using an adhesive member (not shown) containing metal. The electrodes of the light emitting element and the conductive member 1010 are connected using the conductive wire 1050. Although the light emitting element having positive and negative electrodes on the same surface side is used here, a light emitting element having positive and negative electrodes formed on different surfaces can also be used.

次いで、金属層の融点よりも低い温度で加熱して接着部材を溶融させ、発光素子１０２０と導電部材１０１０とを強固に接着させる。加熱温度は、金属層や接着部材の材料にもよるが、２００〜３８０℃程度の範囲が好ましく、更に好ましくは２７０〜３４０℃である。例えば、Ａｕ：Ｓｎ＝８０：２０のはんだ共晶材料は、共晶温度が２８０〜３２０℃の範囲であるため、この範囲温度で加熱するのが好ましい。ここでの加熱工程が、第１の工程で金属層を形成した後の加熱工程以降で最も高い温度が加わる工程であり、この温度領域ではＡｕとステンレス中の金属（Ｆｅ、Ｎｉ、Ｃｒ等）との拡散係数は大きく、特に、Ａｕ中にＦｅ、Ｎｉ、Ｃｒ等が拡散し易い環境となる。そして、樹脂のみからなる接着部材の加熱温度よりも高いものであり、このような高温で加熱した場合であっても、ステンレスからなる支持基板と導電部材の最下層にある第１層（Ａｕ）とが、それらの間に設けられる金属層によって合金化層が形成されるのを抑制することができる。   Next, the adhesive member is melted by heating at a temperature lower than the melting point of the metal layer, and the light emitting element 1020 and the conductive member 1010 are firmly bonded. Although heating temperature is based also on the material of a metal layer or an adhesive member, the range of about 200-380 degreeC is preferable, More preferably, it is 270-340 degreeC. For example, a solder eutectic material of Au: Sn = 80: 20 has a eutectic temperature in the range of 280 to 320 ° C., and is preferably heated at this range temperature. The heating step here is a step in which the highest temperature is applied after the heating step after the metal layer is formed in the first step. In this temperature range, the metal in Au and stainless steel (Fe, Ni, Cr, etc.) The diffusion coefficient is large, and in particular, an environment in which Fe, Ni, Cr, etc. easily diffuses in Au. And even if it is a case where it is higher than the heating temperature of the adhesive member made of resin alone and is heated at such a high temperature, the support layer made of stainless steel and the first layer (Au) in the lowermost layer of the conductive member However, it can suppress that an alloying layer is formed by the metal layer provided between them.

４．第４の工程
第４の工程では、図１Ｃ（ｃ）に示すように、基体の側壁１０３０ｂに囲まれて形成される凹部に透光性樹脂からなる封止部材１０６０をトランスファモールド、ポッティング、印刷などの方法で形成する。凹部を有する基体の場合、ポッティングを用いて透光性樹脂を凹部内に充填するのが好ましい。このようにして、発光素子１０２０や導電性ワイヤ１０５０を封止部１０６０材で被覆する。ここでは、封止部材１０６０は、側壁１０３０ｂと略同一高さになるように設けられているが、これに限らず、側壁１０３０ｂよりも低く又は高くなるよう形成してもよい。また、このように上面が平坦な面としてもよく、或いは、中央が凹んだ、又は突出したような曲面状に形成してもよい。また、封止部材は１層構造、又は組成や特性が異なる２層以上の多層構造としてもよい。 4). Fourth Step In the fourth step, as shown in FIG. 1C (c), a sealing member 1060 made of a translucent resin is transferred, potted, and printed in a recess formed by being surrounded by the side wall 1030b of the substrate. It is formed by the method. In the case of a substrate having a recess, it is preferable to fill the recess with a translucent resin using potting. In this manner, the light emitting element 1020 and the conductive wire 1050 are covered with the sealing portion 1060 material. Here, the sealing member 1060 is provided so as to have substantially the same height as the side wall 1030b. However, the sealing member 1060 is not limited thereto, and may be formed to be lower or higher than the side wall 1030b. In addition, the upper surface may be a flat surface as described above, or may be formed in a curved shape in which the center is recessed or protruded. Further, the sealing member may have a single-layer structure or a multilayer structure of two or more layers having different compositions and characteristics.

５．第５の工程
第５の工程では、封止部材１０６０が硬化後に、図１Ｄ（ｃ）に示すように、支持基板１０７０を剥離するが、この際、金属層１０８０と導電部材１０１０の第１層との間を分離するような位置で剥離して除去する。すなわち、金属層１０８０は支持基板１０７０の表面に形成されたままの状態で除去する。 5). Fifth Step In the fifth step, after the sealing member 1060 is cured, the support substrate 1070 is peeled off as shown in FIG. 1D (c). At this time, the metal layer 1080 and the first layer of the conductive member 1010 are peeled off. Are removed by peeling at a position where they are separated from each other. That is, the metal layer 1080 is removed as it is formed on the surface of the support substrate 1070.

以上のような工程を経て、図１Ｄ（ｄ）に示すような発光装置に集合体１０００を得ることができる。最後に、図１Ｄ（ｄ）中に示す破線部、すなわち、基体の側壁１０３０ｂを切断するような位置で基体１０３０及び導電部材１０１０を切断することで個片化し、図１Ａに示すような発光装置１００を得ることができる。個片化の方法としては、ブレードによるダイシング、レーザ光によるダイシング等種々の方法を用いることができる。   Through the above steps, the aggregate 1000 can be obtained in the light emitting device as shown in FIG. 1D (d). Finally, the broken line portion shown in FIG. 1D (d), that is, the base 1030 and the conductive member 1010 are cut into individual pieces at a position where the side wall 1030b of the base is cut, and the light emitting device as shown in FIG. 1A 100 can be obtained. Various methods such as dicing with a blade and dicing with a laser beam can be used as the method of dividing into pieces.

ここでは、側壁１０３０ｂを切断し、封止部材１０６０が切断されないような位置で切断することで、光の取り出し方向を、発光装置１００の上方向のみに限定することができる。これにより、上方向への光の取り出しが効率よく行われる。尚、図１Ｄ（ｄ）では、導電部材を含む位置で切断しているが、これに限らず、導電部材から離間する位置で切断してもよい。導電部材を含む位置で切断すると、発光装置の側面にも導電部材が露出しているようになり、はんだ等が接合し易くなる。また、導電部材から離間する位置で切断する場合、切断されるのが基体や封止部材など樹脂のみとなるため、導電部材と樹脂とを合わせて切断するのに比して容易に切断することができる。   Here, the light extraction direction can be limited to only the upward direction of the light emitting device 100 by cutting the side wall 1030b and cutting at a position where the sealing member 1060 is not cut. Thereby, the extraction of light in the upward direction is efficiently performed. In addition, in FIG. 1D (d), although it cut | disconnected in the position containing a conductive member, you may cut | disconnect not only in this but in the position spaced apart from a conductive member. If the conductive member is cut at a position including the conductive member, the conductive member is exposed also on the side surface of the light emitting device, and solder or the like is easily joined. In addition, when cutting at a position away from the conductive member, since only the resin such as the base and the sealing member is cut, it is easier to cut compared to cutting the conductive member and the resin together. Can do.

以下、本発明の発光装置の各部材について、詳説する。   Hereinafter, each member of the light emitting device of the present invention will be described in detail.

（基体）
本実施の形態において、基体は、一対の導電部材の間に設けられる底面部と側壁とからなる凹部を有する樹脂であり、遮光性を有する各種充填材等を添加することで発光素子からの光を遮光可能な樹脂からなる。このような遮光性の基体を設けることで、発光素子からの光が、発光装置の下面（裏面）側から外部に漏れ出すのを抑制することができ、上面方向への光の取り出し効率を向上させることができる。尚、側壁を有していない基体、すなわち、底面部のみの基体でもよい。基体の底面部及び側壁とも、その厚みは、発光素子からの光の漏れを抑制できる厚さであればよい。 (Substrate)
In this embodiment mode, the base is a resin having a concave portion including a bottom surface portion and a side wall provided between a pair of conductive members, and light from the light emitting element is added by adding various light-shielding fillers. Is made of a resin capable of shielding light. By providing such a light-shielding substrate, light from the light emitting element can be prevented from leaking to the outside from the lower surface (back surface) side of the light emitting device, and the light extraction efficiency in the upper surface direction is improved. Can be made. In addition, the base | substrate which does not have a side wall, ie, a base | substrate only of a bottom face part, may be sufficient. The thickness of the bottom surface and the side wall of the substrate may be any thickness that can suppress light leakage from the light emitting element.

基体は発光素子からの光が遮光可能な部材であればよく、また、支持基板との線膨張係数の差が小さいものが好ましい。さらに、絶縁性部材を用いるのが好ましい。好ましい材料としては、熱硬化性樹脂、熱可塑性樹脂などの樹脂を用いることができる。特に、導電部材の膜厚が２５μｍ〜２００μｍ程度の極薄い厚みの場合は、熱硬化性樹脂が好ましく、これによって極めて薄型の基体を得ることができる。具体的にはエポキシ樹脂組成物、シリコーン樹脂組成物、シリコーン変性エポキシ樹脂などの変性エポキシ樹脂組成物、エポキシ変性シリコーン樹脂などの変性シリコーン樹脂組成物、ポリイミド樹脂組成物、変性ポリイミド樹脂組成物などをあげることができる。   The substrate may be any member that can block light from the light emitting element, and preferably has a small difference in linear expansion coefficient from the support substrate. Furthermore, it is preferable to use an insulating member. As a preferable material, a resin such as a thermosetting resin or a thermoplastic resin can be used. In particular, when the conductive member has a very thin thickness of about 25 μm to 200 μm, a thermosetting resin is preferable, and an extremely thin substrate can be obtained. Specifically, epoxy resin composition, silicone resin composition, modified epoxy resin composition such as silicone modified epoxy resin, modified silicone resin composition such as epoxy modified silicone resin, polyimide resin composition, modified polyimide resin composition, etc. I can give you.

特に、熱硬化性樹脂が好ましく、特開２００６−１５６７０４に記載されている樹脂が好ましい。例えば、熱硬化性樹脂のうち、エポキシ樹脂、変性エポキシ樹脂、シリコーン樹脂、変性シリコーン樹脂、アクリレート樹脂、ウレタン樹脂等が好ましい。具体的には、（ｉ）トリグリシジルイソシアヌレート、水素化ビスフェノールＡジグリシジルエーテルからなるエポキシ樹脂と、（ｉｉ）ヘキサヒドロ無水フタル酸、３−メチルヘキサヒドロ無水フタル酸、４−メチルヘキサヒドロ無水フタル酸からなる酸無水物とを、エポキシ樹脂へ当量となるよう溶解混合した無色透明な混合物を含む固形状エポキシ樹脂組成物を用いるのが好ましい。さらにこれら混合物１００重量部に対して、硬化促進剤としてＤＢＵ（１，８−Ｄｉａｚａｂｉｃｙｃｌｏ（５，４，０）ｕｎｄｅｃｅｎｅ−７）を０．５重量部、助触媒としてエチレングリコールを１重量部、酸化チタン顔料を１０重量部、ガラス繊維を５０重量部添加し、加熱により部分的に硬化反応させ、Ｂステージ化した固形状エポキシ樹脂組成物が好ましい。   In particular, a thermosetting resin is preferable, and a resin described in JP-A-2006-156704 is preferable. For example, among thermosetting resins, epoxy resins, modified epoxy resins, silicone resins, modified silicone resins, acrylate resins, urethane resins and the like are preferable. Specifically, (i) an epoxy resin composed of triglycidyl isocyanurate and hydrogenated bisphenol A diglycidyl ether, and (ii) hexahydrophthalic anhydride, 3-methylhexahydrophthalic anhydride, 4-methylhexahydrophthalic anhydride It is preferable to use a solid epoxy resin composition containing a colorless and transparent mixture obtained by dissolving and mixing an acid anhydride composed of an acid with an epoxy resin so as to have an equivalent amount. Furthermore, with respect to 100 parts by weight of these mixtures, 0.5 parts by weight of DBU (1,8-Diazabicyclo (5,4,0) undecene-7) as a curing accelerator, 1 part by weight of ethylene glycol as a co-catalyst, oxidation A solid epoxy resin composition in which 10 parts by weight of a titanium pigment and 50 parts by weight of glass fiber are added and partially cured by heating to form a B stage is preferable.

また、国際公開番号ＷＯ２００７／０１５４２６号公報に記載の、トリアジン誘導体エポキシ樹脂を含むエポキシ樹脂を必須成分とする熱硬化性エポキシ樹脂組成物が好ましい。例えば、１，３，５−トリアジン核誘導体エポキシ樹脂を含むことが好ましい。特にイソシアヌレート環を有するエポキシ樹脂は、耐光性や電気絶縁性に優れている。一つのイソシアヌレート環に対して、２価の、より好ましくは３価のエポキシ基を有することが望ましい。具体的には、トリス（２，３−エポキシプロピル）イソシアヌレート、トリス（α−メチルグリシジル）イソシアヌレート等を用いることができる。トリアジン誘導体エポキシ樹脂の軟化点は９０〜１２５℃であることが好ましい。また、これらトリアジン誘導体エポキシ樹脂に、水素添加エポキシ樹脂や、その他のエポキシ樹脂を併用してもよい。更に、シリコーン樹脂組成物の場合、メチルシリコーンレジンを含むシリコーン樹脂が好ましい。   Moreover, the thermosetting epoxy resin composition which has the epoxy resin containing a triazine derivative epoxy resin as an essential component as described in international publication number WO2007 / 015426 is preferable. For example, it is preferable to include a 1,3,5-triazine nucleus derivative epoxy resin. In particular, an epoxy resin having an isocyanurate ring is excellent in light resistance and electrical insulation. It is desirable to have a divalent, more preferably a trivalent epoxy group for one isocyanurate ring. Specifically, tris (2,3-epoxypropyl) isocyanurate, tris (α-methylglycidyl) isocyanurate, or the like can be used. The softening point of the triazine derivative epoxy resin is preferably 90 to 125 ° C. These triazine derivative epoxy resins may be used in combination with a hydrogenated epoxy resin or other epoxy resins. Furthermore, in the case of a silicone resin composition, a silicone resin containing a methyl silicone resin is preferable.

特に、トリアジン誘導体エポキシ樹脂を用いる場合について具体的に説明する。トリアジン誘導体エポキシ樹脂に、硬化剤として作用する酸無水物を用いるのが好ましく、特に、非芳香族であり、かつ、炭素炭素２重結合を有さない酸無水物を用いることで耐光性を向上させることができる。具体的には、ヘキサヒドロ無水フタル酸、メチルヘキサヒドロ無水フタル酸、トリアルキルテトラヒドロ無水フタル酸、水素化メチルナジック酸無水物などが挙げられ、特にメチルヘキサヒドロ無水フタル酸が好ましい。また、酸化防止剤を用いるのが好ましく、例えば、フェノール系、硫黄系酸化防止剤を使用することができる。   In particular, the case where a triazine derivative epoxy resin is used will be specifically described. It is preferable to use an acid anhydride that acts as a curing agent for the triazine derivative epoxy resin. In particular, light resistance is improved by using an acid anhydride that is non-aromatic and does not have a carbon-carbon double bond. Can be made. Specific examples include hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, hydrogenated methylnadic acid anhydride, and the like, and methylhexahydrophthalic anhydride is particularly preferable. Moreover, it is preferable to use antioxidant, for example, phenol type and sulfur type antioxidant can be used.

そして、これら樹脂中に遮光性を付与するための充填材や、必要に応じて各種添加剤を混入させることができ、本発明ではこれらを含めて基体を構成する遮光性樹脂と称する。例えば、充填材（フィラー）としてＴｉＯ２、ＳｉＯ２、Ａｌ２Ｏ３、ＭｇＯ、ＭｇＣＯ３、ＣａＣＯ３、Ｍｇ（ＯＨ）２、Ｃａ（ＯＨ）２などの微粒子などを混入させることで光の透過率を調整し、発光素子からの光の約６０％以上を遮光するよう、より好ましくは約９０％を遮光するようにするのが好ましい。尚、ここでは基体によって光を反射するか、又は吸収するかどちらでもよいが、発光装置を照明などの用途に用いる場合は、より好ましくは反射させることによって遮光するのが好ましい。そのため、発光素子からの光に対する反射率が６０％以上であるものが好ましく、より好ましくは９０％以上反射するものが好ましい。 These resins can be mixed with a filler for imparting light-shielding properties and various additives as required. In the present invention, these are referred to as light-shielding resins constituting the substrate. For example, light can be transmitted by mixing fine particles such as TiO 2 , SiO 2 , Al 2 O 3 , MgO, MgCO 3 , CaCO 3 , Mg (OH) 2 , and Ca (OH) 2 as a filler (filler). It is preferable to adjust the rate so that about 60% or more of the light from the light emitting element is shielded, more preferably about 90%. Here, either the light may be reflected or absorbed by the substrate, but when the light-emitting device is used for illumination or the like, it is more preferable to shield the light by reflecting it. Therefore, it is preferable that the reflectance with respect to the light from the light emitting element is 60% or more, more preferably 90% or more.

上記のような各種充填材は、１種類のみ、或いは２種類以上を組み合わせて用いることができ、例えば、反射率を調整するための充填材と、後述のように線膨張係数を調整するための充填材とを併用するなどの用い方ができる。   The various fillers as described above can be used alone or in combination of two or more. For example, the filler for adjusting the reflectance and the linear expansion coefficient as described later can be used. It can be used in combination with fillers.

例えば、白色の充填材としてＴｉＯ２を用いる場合は、好ましくは１０〜３０ｗｔ％、より好ましくは１５〜２５ｗｔ％配合させるのがよい。ＴｉＯ２は、ルチル形、アナタース形のどちらを用いても良い。遮光性や耐光性の点からルチル形が好ましい。更に、分散性、耐光性を向上させたい場合、表面処理により改質した充填材も使用できる。ＴｉＯ２から成る充填材の表面処理にはアルミナ、シリカ、酸化亜鉛等の水和酸化物、酸化物等を用いることができる。また、これらに加え、充填材として主として線膨張係数を調整するための充填材としてＳｉＯ２を６０〜８０ｗｔ％の範囲で用いるのが好ましく、さらに、６５〜７５ｗｔ％用いるのが好ましい。また、ＳｉＯ２としては、結晶性シリカよりも線膨張係数の小さい非晶質シリカが好ましい。また、粒径が１００μｍ以下の充填材、更には６０μｍ以下の充填材が好ましい。更に、形状は球形の充填材が好ましく、これにより基体成型時の充填性を向上させることができる。また、ディスプレイなどに用いる場合であって、コントラストを向上させたい場合は、発光素子からの光の吸収率が６０％以上、より好ましくは９０％以上吸収するものが好ましい。このような場合、充填材としては、アセチレンブラック、活性炭、黒鉛などのカーボンや、酸化鉄、二酸化マンガン、酸化コバルト、酸化モリブデンなどの遷移金属酸化物、もしくは有色有機顔料などを目的に応じて利用する事ができる。 For example, when TiO 2 is used as a white filler, it is preferably added in an amount of 10 to 30 wt%, more preferably 15 to 25 wt%. TiO 2 may be either a rutile type or an anatase type. The rutile type is preferable from the viewpoint of light shielding properties and light resistance. Furthermore, when it is desired to improve dispersibility and light resistance, a filler modified by surface treatment can also be used. For the surface treatment of the filler made of TiO 2, hydrated oxides such as alumina, silica, and zinc oxide, and oxides can be used. In addition to these, it is preferable to use SiO 2 in the range of 60 to 80 wt%, and more preferably 65 to 75 wt% as a filler mainly for adjusting the linear expansion coefficient. As the SiO 2, less amorphous silica coefficient of linear expansion than the crystalline silica is preferable. Further, a filler having a particle size of 100 μm or less, and further a filler of 60 μm or less is preferable. Furthermore, a spherical filler is preferable, which can improve the filling property when molding the substrate. In the case of use in a display or the like, in order to improve the contrast, it is preferable that the light absorption rate from the light emitting element is 60% or more, more preferably 90% or more. In such cases, as the filler, carbon such as acetylene black, activated carbon, graphite, transition metal oxides such as iron oxide, manganese dioxide, cobalt oxide, molybdenum oxide, or colored organic pigments are used depending on the purpose. I can do it.

また、基体の線膨張係数は、個片化する前に除去（剥離）される支持基板の線膨張係数との差が小さくなるように制御するのが好ましい。好ましくは３０％以下、より好ましくは１０％以下の差とするのがよい。支持基板としてＳＵＳ板を用いる場合、線膨張係数の差は２０ｐｐｍ以下が好ましく、１０ｐｐｍ以下がより好ましい。この場合、充填材を７０ｗｔ％以上、好ましくは８５ｗｔ％以上配合させるのが好ましい。これにより、支持基板と基体との残留応力を制御（緩和）することができるため、個片化する前の発光装置の集合体の反りを少なくすることができる。反りを少なくすることで、導電性ワイヤの切断など内部損傷を低減し、また、個片化する際の位置ズレを抑制して歩留まりよく製造することができる。例えば、基体の線膨張係数を５〜２５×１０−６／Ｋに調整することが好ましく、さらに好ましくは７〜１５×１０−６／Ｋに調整することが望ましい。これにより、基体成型後、冷却時に生じる反りを抑制し易くすることができ、歩留まりよく製造することができる。尚、本明細書において線膨張係数とは、各種充填材等で調整された遮光性樹脂からなる基体のガラス転移温度以下での線膨張係数を指す。この温度領域における線膨張係数が、支持基板の線膨張係数と近いものが好ましい。 Further, it is preferable to control the linear expansion coefficient of the substrate so that the difference from the linear expansion coefficient of the support substrate to be removed (peeled) before being separated into pieces is reduced. The difference is preferably 30% or less, more preferably 10% or less. When a SUS plate is used as the support substrate, the difference in coefficient of linear expansion is preferably 20 ppm or less, and more preferably 10 ppm or less. In this case, it is preferable to add 70 wt% or more, preferably 85 wt% or more of the filler. Thereby, since the residual stress between the support substrate and the base can be controlled (relaxed), the warpage of the assembly of the light emitting devices before being separated into pieces can be reduced. By reducing the warpage, internal damage such as cutting of the conductive wire can be reduced, and the positional deviation at the time of singulation can be suppressed, and manufacturing can be performed with high yield. For example, it is preferable to adjust the linear expansion coefficient of the substrates 5~25 × 10 -6 / K, more preferably it is desirable to adjust the 7~15 × 10 -6 / K. Thereby, it is possible to easily suppress the warpage that occurs during cooling after the base is molded, and it is possible to manufacture with high yield. In addition, in this specification, a linear expansion coefficient refers to the linear expansion coefficient below the glass transition temperature of the base | substrate which consists of light-shielding resin adjusted with various fillers. It is preferable that the linear expansion coefficient in this temperature region is close to the linear expansion coefficient of the support substrate.

また、別の観点から、基体の線膨張係数は、第１及び第２の導電部材の線膨張係数との差が小さくなるように制御するのが好ましい。好ましくは４０％以下、より好ましくは２０％以下の差とするのがよい。これにより、個片化後の発光装置において、第１及び第２の導電部材と基体とが剥離するのを抑制し、信頼性に優れた発光装置とすることができる。   From another point of view, it is preferable to control the linear expansion coefficient of the base so that the difference between the linear expansion coefficients of the first and second conductive members is small. The difference is preferably 40% or less, more preferably 20% or less. Thereby, in the light emitting device after separation, the first and second conductive members and the base are prevented from being peeled off, and the light emitting device having excellent reliability can be obtained.

（導電部材）
導電部材は、発光素子に直接又は間接的に電気的に接続して外部から供給される電気を通電させるための一対の電極として機能させるものであり、少なくとも１つの導電部材は発光素子が載置可能な大きさであり、他方は導電性ワイヤが接続可能な大きさを有している。導電部材の下面は、発光装置の外面を構成するよう第１層（Ａｕ）が露出されており、これにより、回路基板との密着性の優れた電極として機能させることができ、良好に導通させることができる。 (Conductive member)
The conductive member functions as a pair of electrodes that are electrically connected directly or indirectly to the light emitting element and energizes electricity supplied from the outside. At least one conductive member is mounted on the light emitting element. The other has a size that can be connected to a conductive wire. The first layer (Au) is exposed on the lower surface of the conductive member so as to constitute the outer surface of the light emitting device. This allows the electrode to function as an electrode having excellent adhesion to the circuit board, and makes it electrically conductive. be able to.

導電部材の側面は、平坦な面でもよいが基体との密着性等を考慮すると、図１Ｂに示すような突起部を有するようにするのが好ましい。この突起部は、導電部材１０１の下面から離間した位置に設けるのが好ましく、これにより導電部材１０１が基体１０３から脱落するなどの問題が生じにくくなる。このような突起部は、導電部材の周囲の任意の位置に設けることができ、例えば、上面視四角形の導電部材の対向する２つの側面にのみ設けるなど、部分的に設けることができる。より確実に脱落を防ぐためには、導電部材の周囲全体に渡って形成するのが好ましい。   The side surface of the conductive member may be a flat surface, but it is preferable to have a protrusion as shown in FIG. 1B in consideration of adhesion to the substrate. This protrusion is preferably provided at a position separated from the lower surface of the conductive member 101, thereby preventing problems such as the conductive member 101 falling off the base 103. Such a protrusion can be provided at an arbitrary position around the conductive member, and can be provided partially, for example, only on two opposing side surfaces of the conductive member having a quadrangular view in top view. In order to prevent dropping more reliably, it is preferable to form the entire periphery of the conductive member.

導電部材の膜厚については、１０μｍ〜１００μｍ程度が好ましく、特に４５μｍ〜９５μｍ以下程度が好ましい。このような薄い導電部材は、後述のように支持基板に鍍金することで得ることができる。上記範囲の厚さとすることで、比較的均一な膜厚の導電部材とすることができる。   The film thickness of the conductive member is preferably about 10 μm to 100 μm, and particularly preferably about 45 μm to 95 μm. Such a thin conductive member can be obtained by plating on a support substrate as described later. By setting it as the thickness of the said range, it can be set as the electrically-conductive member of a comparatively uniform film thickness.

本願において導電部材は、Ａｕを主成分とする第１層と、その上にＡｕと異なる金属を主成分とする第２層とを有している。   In the present application, the conductive member has a first layer containing Au as a main component and a second layer containing a metal different from Au as a main component thereon.

導電部材のＡｕを主成分とする第１層は、支持基板及び金属層を除去した後に、発光装置の裏面に露出されるものであり、回路基板への実装に用いられる半田の濡れ性に優れた部材である。そのため、第１層として主成分をＡｕ、好ましくはＡｕとしておくことで、更なる鍍金工程を必要としない。第１層の膜厚は、０．０４μｍ〜１μｍ程度が好ましく、より好ましくは０．１〜０．５μｍ程度である。   The first layer composed mainly of Au of the conductive member is exposed on the back surface of the light emitting device after removing the support substrate and the metal layer, and is excellent in the wettability of the solder used for mounting on the circuit board. It is a member. Therefore, by setting the main component as Au, preferably Au as the first layer, no further plating process is required. The thickness of the first layer is preferably about 0.04 μm to 1 μm, more preferably about 0.1 to 0.5 μm.

導電部材の第２層は、Ａｕと異なる金属を主成分とする層であり、目的や用途に応じて、銅、ニッケル、鉄、パラジウムなどを好適に用いることができる。例えば、導電部材や発光装置の機械的強度を向上させるためには、耐食性の高いＮｉを主成分として用いるのが好ましく、また、放熱性を向上させるためには、熱伝導率の高い銅を用いるなど、目的や用途に応じて、種々選択することができる。これらは単体で用いることができるが、機械的強度や接合性、量産性、コスト等を考慮して、その他の金属との合金や、更には第１層と第２層との間や第２層の上にそれらを積層してもよい。このような材料としては、アルミニウム、金、銀、タングステン、モリブデン、コバルト等の金属又これらの合金（鉄−ニッケル合金等）、りん青銅、鉄入り銅、ＡｕＳｎなどのはんだ共晶材料、ＳｎＡｇＣｕ、ＳｎＡｇＣｕＩｎなどのはんだ、ＩＴＯ等が挙げられる。はんだ材料の中でも、はんだ粒子が一旦溶融し凝固するとはんだにより接合する金属とはんだが合金化して融点が上昇し、リフロー実装時などの追加の熱処理時に再溶解しない組成に調整したものが好ましい。第２層の膜厚は、０．０４μｍ〜２００μｍ程度が好ましく、より好ましくは４０〜８０μｍ程度である。   The second layer of the conductive member is a layer containing a metal different from Au as a main component, and copper, nickel, iron, palladium, or the like can be suitably used depending on the purpose and application. For example, in order to improve the mechanical strength of the conductive member and the light emitting device, it is preferable to use Ni having high corrosion resistance as a main component, and in order to improve heat dissipation, copper having high thermal conductivity is used. Various selections can be made according to the purpose and application. These can be used alone, but in consideration of mechanical strength, bondability, mass productivity, cost, etc., alloys with other metals, or between the first layer and the second layer, or the second layer. They may be laminated on the layer. Examples of such materials include metals such as aluminum, gold, silver, tungsten, molybdenum, and cobalt, or alloys thereof (iron-nickel alloy, etc.), phosphor bronze, iron-containing copper, solder eutectic materials such as AuSn, SnAgCu, Examples thereof include solder such as SnAgCuIn and ITO. Among the solder materials, it is preferable that the solder particles are once melted and solidified so that the metal and the solder to be joined are alloyed and the melting point is increased, and the composition is adjusted so as not to be re-dissolved during additional heat treatment such as reflow mounting. The film thickness of the second layer is preferably about 0.04 μm to 200 μm, more preferably about 40 to 80 μm.

また、導電部材の最表面（最上面）には、発光素子や波長変換部材からの光を反射可能な材料を設けるのが好ましく、具体的には金、銀、銅、Ｐｔ、Ｐｄ、Ａｌ、Ｗ、Ｍｏ、Ｒｕ、Ｒｈ等が好ましい。更に最表面の導電部材は高反射率、高光沢である事が好ましい。具体的には可視域の反射率は７０％以上である事が好ましく、その際はＡｕ、Ａｌ、Ａｇ、Ｒｕ、Ｒｈ、Ｐｔ、Ｐｄなどが好ましく、特にＡｇが好ましい。また、導電部材の表面光沢も高いほうが好ましい。具体的に光沢度は好ましくは０．５以上、より好ましくは１．０以上である。ここで示される光沢度は日本電色工業製 微小面色差計ＶＳＲ ３００Ａを用い、４５°照射、垂直受光で得られる数字である。また、支持基板側は回路基板等への実装に有利なＡｕ、Ｓｎ、Ｓｎ合金、ＡｕＳｎなどの共晶はんだ鍍金等が好ましい。   In addition, it is preferable to provide a material capable of reflecting light from the light emitting element or the wavelength conversion member on the outermost surface (uppermost surface) of the conductive member. Specifically, gold, silver, copper, Pt, Pd, Al, W, Mo, Ru, Rh and the like are preferable. Furthermore, it is preferable that the outermost conductive member has high reflectivity and high gloss. Specifically, the reflectance in the visible region is preferably 70% or more. In this case, Au, Al, Ag, Ru, Rh, Pt, Pd and the like are preferable, and Ag is particularly preferable. Further, it is preferable that the surface gloss of the conductive member is high. Specifically, the glossiness is preferably 0.5 or more, more preferably 1.0 or more. The glossiness shown here is a number obtained by 45 ° irradiation and vertical light reception using a Nippon Denshoku Industries micro surface color difference meter VSR 300A. Further, eutectic solder plating such as Au, Sn, Sn alloy, AuSn and the like, which are advantageous for mounting on a circuit board or the like, is preferable on the support substrate side.

上記のような導電部材は、鍍金方法によって形成される鍍金（鍍金層）であることが好ましく、特に、積層された鍍金（層）であることが好ましい。   The conductive member as described above is preferably a plating (plating layer) formed by a plating method, and particularly preferably a laminated plating (layer).

また、比較的支持基板との線膨張係数が近いものが好ましい。例えば、支持基板として、線膨張係数が１０．４×１０−６／ＫであるＳＵＳ４３０を用い、その上に導電部材として、第１層として、線膨張係数１４．２×１０−６／ＫであるＡｕ（０．０４〜０．１μｍ）、その上に第２層として線膨張係数１２．８×１０−６／ＫであるＮｉ（又は線膨張係数１６．８×１０−６／ＫであるＣｕ）（４０〜７０μｍ）／Ａｕ（０．０１〜０．０７μｍ）、更に最表面層として線膨張係数１１９．７×１０−６／ＫであるＡｇ（２〜６μｍ）等の積層構造が好ましい。最上層のＡｇは線膨張係数が他の層の金属と大きく異なるが、発光素子からの光の反射率を優先しているためであり、極めて薄い厚みとしているため反りに対する影響は極めて微弱であり、実用的に問題はない程度である。 Moreover, the thing with a comparatively near linear expansion coefficient with a support substrate is preferable. For example, SUS430 having a linear expansion coefficient of 10.4 × 10 −6 / K is used as the support substrate, and a conductive member is formed thereon, and the first layer has a linear expansion coefficient of 14.2 × 10 −6 / K. A certain Au (0.04 to 0.1 μm), and Ni (or linear expansion coefficient 16.8 × 10 −6 / K) as the second layer on top of it is 12.8 × 10 −6 / K Cu) (40 to 70 μm) / Au (0.01 to 0.07 μm), and a laminated structure such as Ag (2 to 6 μm) having a linear expansion coefficient of 119.7 × 10 −6 / K as the outermost surface layer is preferable. . The top layer of Ag has a linear expansion coefficient that is significantly different from that of other layers of metal, but it is because priority is given to the reflectance of light from the light emitting element, and the influence on the warp is extremely weak because of its extremely thin thickness. There is no practical problem.

（封止部材）
封止部材は、発光素子、受光素子、保護素子、更には導電性ワイヤなどの電子部品を、塵芥や水分、更には外力などから保護する部材であり、本実施の形態においては、図１Ａ、図１Ｂに示すように、基体１０３の凹部Ｓ内に充填されている。 (Sealing member)
The sealing member is a member that protects electronic components such as a light emitting element, a light receiving element, a protective element, and a conductive wire from dust, moisture, and external force. In the present embodiment, FIG. As shown in FIG. 1B, the concave portion S of the base 103 is filled.

封止部材の材料としては、発光素子からの光を透過可能な透光性を有し、且つ、それらによって劣化しにくい耐光性を有するものが好ましい。具体的な材料としては、シリコーン樹脂組成物、変性シリコーン樹脂組成物、エポキシ樹脂組成物、変性エポキシ樹脂組成物、アクリル樹脂組成物等発光素子からの光を透過可能な透光性を有する絶縁樹脂組成物を挙げることができる。更に、シリコーン樹脂、エポキシ樹脂、ユリア樹脂、フッ素樹脂及びこれらの樹脂を少なくとも１種以上含むハイブリッド樹脂等も用いることができる。さらにまた、これらの有機物に限られず、ガラス、シリカゾル等の無機物も用いることができる。このような材料に加え、所望に応じて着色剤、光拡散剤、光反射材、各種フィラー、波長変換部材（蛍光部材）などを含有させることもできる。封止部材の充填量は、上記電子部品が被覆される量であればよい。   As a material for the sealing member, a material having a light-transmitting property capable of transmitting light from the light-emitting element and having light resistance that is not easily deteriorated by them is preferable. Specific examples of the material include a silicone resin composition, a modified silicone resin composition, an epoxy resin composition, a modified epoxy resin composition, and an acrylic resin composition. A composition can be mentioned. Furthermore, a silicone resin, an epoxy resin, a urea resin, a fluororesin, and a hybrid resin containing at least one of these resins can also be used. Furthermore, it is not limited to these organic materials, and inorganic materials such as glass and silica sol can also be used. In addition to such materials, a colorant, a light diffusing agent, a light reflecting material, various fillers, a wavelength conversion member (fluorescent member), and the like can be included as desired. The filling amount of the sealing member may be an amount that covers the electronic component.

封止樹部材の外表面の形状については配光特性などに応じて種々選択することができる。例えば、上面を凸状レンズ形状、凹状レンズ形状、フレネルレンズ形状などとすることで、指向特性を調整することができる。また、封止部材に加え別に、レンズ部材を設けてもよい。さらに、蛍光部材入り成形体、例えば蛍光部材入り板状成形体、ドーム状成形体等を用いる場合には、封止部材としては密着性に優れた材料を選択することが好ましい。蛍光部材入り成形体は樹脂組成物の他、ガラス等の無機物を用いることができる。   The shape of the outer surface of the sealing tree member can be variously selected according to the light distribution characteristics. For example, the directivity can be adjusted by making the upper surface into a convex lens shape, a concave lens shape, a Fresnel lens shape, or the like. In addition to the sealing member, a lens member may be provided. Furthermore, when using a molded article containing a fluorescent member, for example, a plate-like molded article containing a fluorescent member, a dome-shaped molded article, etc., it is preferable to select a material having excellent adhesion as the sealing member. In addition to the resin composition, the fluorescent member-containing molded body may be made of an inorganic material such as glass.

尚、主として発光装置について上述のように説明したが、受光装置についてもほぼ上記と同様であり、用いる封止部材として、光の入射効率を高めるたり、受光装置内部での２次反射を避ける目的で白色もしくは黒色などの有色フィラーを用いても良い。特に赤外線発光装置や赤外線検知装置には可視光の影響を避けるために黒色の有色フィラー含有の封止部材を用いるのが好ましい。   Although the light emitting device has been mainly described above, the light receiving device is substantially the same as described above. As a sealing member to be used, the purpose is to increase the light incident efficiency or avoid secondary reflection inside the light receiving device. A colored filler such as white or black may be used. In particular, in order to avoid the influence of visible light, it is preferable to use a black colored filler-containing sealing member for an infrared light emitting device or an infrared detection device.

また、上述の遮光性樹脂からなる基体の代わりに、上記封止部材として用いられる樹脂で、導電部材とその上に載置される各電子部品とを一体的に保持するようにしてもよい。   Further, instead of the base made of the above light-shielding resin, the conductive member and each electronic component placed thereon may be integrally held with the resin used as the sealing member.

（接着部材）
接着部材は、金属を含有する部材であり、金属層の融点よりも低い温度の加熱によって溶融して発光素子と導電部材とを接着可能な部材である。このような接着部材は、樹脂のみからなる接着部材よりも高い温度での加熱が必要であるが、その分、耐熱性に優れた部材であり、発光素子の高出力化に伴う高温の発熱によっても劣化しにくく、密着性が低下しにくい。接着部材の好ましい材料としては、銀、金、パラジウムなどの導電性ペーストや、ＡｕＳｎなどのはんだ共晶材料、低融点金属等のろう材を用いることができ、特にＡｕ：Ｓｎ＝１０：９０、Ａｕ：Ｓｎ＝８０：２０の共晶材料が好ましい。特にＡｕ：Ｓｎ＝８０：２０のはんだ共晶材料は、共晶温度が２８０〜３２０℃の範囲であり、高い流動性と濡れ性を有しているため発光素子の接着を強固なものとすることができる。 (Adhesive member)
The adhesive member is a member containing a metal, and is a member that can be melted by heating at a temperature lower than the melting point of the metal layer to bond the light emitting element and the conductive member. Such an adhesive member needs to be heated at a higher temperature than an adhesive member made only of resin, but is a member excellent in heat resistance, and due to high-temperature heat generation accompanying the increase in output of the light emitting element. Are less likely to deteriorate and adhesion is less likely to decrease. As a preferable material for the adhesive member, a conductive paste such as silver, gold or palladium, a solder eutectic material such as AuSn, or a brazing material such as a low melting point metal can be used. In particular, Au: Sn = 10: 90, A eutectic material of Au: Sn = 80: 20 is preferred. In particular, a solder eutectic material of Au: Sn = 80: 20 has a eutectic temperature in the range of 280 to 320 ° C., and has high fluidity and wettability, so that the light-emitting element is firmly bonded. be able to.

（導電性ワイヤ）
発光素子の電極と、直接又は間接的に導電部材とを接続する導電性ワイヤは、金、銅、白金、アルミニウム等の金属及びそれらの合金を用いた導電性ワイヤが挙げられる。特に、熱抵抗などに優れた金を用いるのが好ましい。 (Conductive wire)
Examples of the conductive wire that directly or indirectly connects the electrode of the light emitting element and the conductive member include conductive wires using metals such as gold, copper, platinum, and aluminum, and alloys thereof. In particular, it is preferable to use gold excellent in thermal resistance.

（波長変換部材）
上記封止部材中に、波長変換部材として発光素子からの光の少なくとも一部を吸収して異なる波長を有する光を発する蛍光部材を含有させることもできる。 (Wavelength conversion member)
In the sealing member, a fluorescent member that emits light having a different wavelength by absorbing at least a part of light from the light emitting element may be contained as a wavelength conversion member.

蛍光部材としては、発光素子からの光を、それより長波長に変換させるものの方が効率がよい。しかしながら、これに限らず、発光素子からの光を、短波長に変換させるもの、或いは、他の蛍光部材によって変換された光を更に変換させるものなど、種々の蛍光部材を用いることができる。このような波長変換部材は、１種の蛍光部材を単層で形成してもよいし、２種以上の蛍光部材が混合された単層を形成してもよいし、１種の蛍光部材を含有する単層を２層以上積層させてもよいし、２種以上の蛍光部材がそれぞれ混合された単層を２層以上積層させてもよい。   As the fluorescent member, it is more efficient to convert the light from the light emitting element into a longer wavelength. However, the present invention is not limited to this, and various fluorescent members such as one that converts light from the light emitting element into a short wavelength or one that further converts light converted by another fluorescent member can be used. Such a wavelength conversion member may form one type of fluorescent member as a single layer, may form a single layer in which two or more types of fluorescent members are mixed, or one type of fluorescent member. Two or more monolayers may be laminated, or two or more monolayers in which two or more kinds of fluorescent members are mixed may be laminated.

蛍光部材としては、例えば、発光素子として窒化物系半導体を発光層とする半導体発光素子を用いる場合、その発光素子からの光を吸収し異なる波長の光に波長変換するものであればよい。例えば、Ｅｕ、Ｃｅ等のランタノイド系元素で主に賦活される窒化物系蛍光体・酸窒化物系蛍光体、より具体的には、（ａ）Ｅｕ賦活されたα若しくはβサイアロン型蛍光体、各種アルカリ土類金属窒化シリケート、各種アルカリ土類金属窒化アルミニウムケイ素（例：ＣａＳｉＡｌＮ３：Ｅｕ、ＳｒＡｌＳｉ４Ｎ７：Ｅｕなど）、（ｂ）Ｅｕ等のランタノイド系の元素、Ｍｎ等の遷移金属系の元素により主に賦活されるアルカリ土類金属ハロゲンアパタイト、アルカリ土類金属のハロシリケート、アルカリ土類金属シリケート、アルカリ土類金属ホウ酸ハロゲン、アルカリ土類金属アルミン酸塩、アルカリ土類金属硫化物、アルカリ土類金属チオガレート、アルカリ土類金属窒化ケイ素、ゲルマン酸塩、または、（ｃ）Ｃｅ等のランタノイド系元素で主に賦活される希土類アルミン酸塩、希土類ケイ酸塩、アルカリ土類金属希土類ケイ酸塩（ｄ）Ｅｕ等のランタノイド系元素で主に賦活される有機及び有機錯体等から選ばれる少なくともいずれか１以上であることが好ましい。好ましくは、Ｃｅ等のランタノイド系元素で主に賦活される希土類アルミン酸塩蛍光体である、Ｙ３Ａｌ５Ｏ１２：Ｃｅ、（Ｙ０．８Ｇｄ０．２）３Ａｌ５Ｏ１２：Ｃｅ、Ｙ３（Ａｌ０．８Ｇａ０．２）５Ｏ１２：Ｃｅ、（Ｙ，Ｇｄ）３（Ａｌ，Ｇａ）５Ｏ１２の組成式で表されるＹＡＧ系蛍光体である。また、Ｙの一部もしくは全部をＴｂ、Ｌｕ等で置換したＴｂ３Ａｌ５Ｏ１２：Ｃｅ、Ｌｕ３Ａｌ５Ｏ１２：Ｃｅなどもある。さらに、上記蛍光部材以外の蛍光部材であって、同様の性能、作用、効果を有する蛍光部材も使用することができる。 As the fluorescent member, for example, when a semiconductor light-emitting element having a nitride-based semiconductor as a light-emitting layer is used as the light-emitting element, any member that absorbs light from the light-emitting element and converts it into light of a different wavelength may be used. For example, a nitride-based phosphor / oxynitride-based phosphor mainly activated by a lanthanoid element such as Eu or Ce, more specifically, (a) an Eu-activated α- or β-sialon-type phosphor, Various alkaline earth metal nitride silicates, various alkaline earth metal aluminum nitride silicon (eg, CaSiAlN 3 : Eu, SrAlSi 4 N 7 : Eu, etc.), (b) lanthanoid elements such as Eu, transition metal systems such as Mn Alkaline earth metal halogenapatite, alkaline earth metal halosilicate, alkaline earth metal silicate, alkaline earth metal borate, alkaline earth metal aluminate, alkaline earth metal sulfide , Alkaline earth metal thiogallate, alkaline earth metal silicon nitride, germanate, or (c) lanthanum such as Ce Selected from organic and organic complexes mainly activated by lanthanoid elements such as rare earth aluminates, rare earth silicates, alkaline earth metal rare earth silicates (d) Eu, which are mainly activated by id elements It is preferable that it is at least any one or more. Preferably, Y 3 Al 5 O 12 : Ce, (Y 0.8 Gd 0.2 ) 3 Al 5 O 12 : Ce, which is a rare earth aluminate phosphor mainly activated by a lanthanoid element such as Ce. Y 3 (Al 0.8 Ga 0.2 ) 5 O 12 : Ce, (Y, Gd) 3 (Al, Ga) 5 O 12 is a YAG phosphor represented by a composition formula. Further, there are Tb 3 Al 5 O 12 : Ce, Lu 3 Al 5 O 12 : Ce, etc. in which a part or all of Y is substituted with Tb, Lu, or the like. Furthermore, fluorescent members other than the above-described fluorescent members, which have similar performance, action, and effect, can be used.

また、蛍光部材をガラス、樹脂組成物等他の成形体に塗布したものも用いることができる。さらに、蛍光部材入り成形体も用いることができる。具体的には、蛍光部材入りガラスや、ＹＡＧ焼結体、ＹＡＧとＡｌ２Ｏ３、ＳｉＯ２、Ｂ２Ｏ３などの焼結体、無機融液中でＹＡＧを析出させた結晶化無機バルク体などを用いたり、蛍光部材をエポキシ、シリコーン、ハイブリッド樹脂等で一体成形したものも用いたりすることができる。 Moreover, what apply | coated the fluorescent member to other molded objects, such as glass and a resin composition, can also be used. Furthermore, a molded body containing a fluorescent member can also be used. Specifically, fluorescent member-containing glass, YAG sintered body, sintered body such as YAG and Al 2 O 3 , SiO 2 , B 2 O 3 , crystallized inorganic bulk in which YAG is precipitated in an inorganic melt A body or the like, or a fluorescent member integrally formed with epoxy, silicone, hybrid resin, or the like can be used.

（発光素子）
本発明においては、発光素子として、同一面側に正負電極が形成された構造、或いは異なる面に正負電極が形成された構造、成長基板とは異なる基板を貼り合わせた構造等、種々の構造の半導体素子を用いることができる。 (Light emitting element)
In the present invention, the light emitting element has various structures such as a structure in which positive and negative electrodes are formed on the same surface side, a structure in which positive and negative electrodes are formed on different surfaces, and a structure in which a substrate different from the growth substrate is bonded. A semiconductor element can be used.

半導体発光素子は、任意の波長のものを選択することができる。例えば、青色、緑色の発光素子としては、ＺｎＳｅや窒化物系半導体（ＩｎＸＡｌＹＧａ１−Ｘ−ＹＮ、０≦Ｘ、０≦Ｙ、Ｘ＋Ｙ≦１）、ＧａＰを用いたものを用いることができる。また、赤色の発光素子としては、ＧａＡｌＡｓ、ＡｌＩｎＧａＰなどを用いることができる。さらに、これ以外の材料からなる半導体発光素子を用いることもできる。用いる発光素子の組成や発光色、大きさや、個数などは目的に応じて適宜選択することができる。 A semiconductor light emitting device having an arbitrary wavelength can be selected. For example, the blue, the green light emitting element, ZnSe and nitride semiconductor (In X Al Y Ga 1- X-Y N, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1), used after using GaP be able to. As the red light emitting element, GaAlAs, AlInGaP, or the like can be used. Furthermore, a semiconductor light emitting element made of a material other than this can also be used. The composition, emission color, size, number, and the like of the light emitting element to be used can be appropriately selected according to the purpose.

波長変換部材を有する発光装置とする場合には、その波長変換部材を効率良く励起できる短波長が発光可能な窒化物半導体（ＩｎＸＡｌＹＧａ１−Ｘ−ＹＮ、０≦Ｘ、０≦Ｙ、Ｘ＋Ｙ≦１）が好適に挙げられる。半導体層の材料やその混晶度によって発光波長を種々選択することができる。 In the case of a light emitting device having a wavelength conversion member, a nitride semiconductor capable of emitting a short wavelength that can efficiently excite the wavelength conversion member (In X Al Y Ga 1- XYN, 0 ≦ X, 0 ≦ Y, X + Y ≦ 1) is preferred. Various emission wavelengths can be selected depending on the material of the semiconductor layer and the degree of mixed crystal.

また、可視光領域の光だけでなく、紫外線や赤外線を出力する発光素子とすることができる。さらには、発光素子とともに、もしくは単独で、受光素子などを搭載することができ、保護素子なども搭載することができる。また、導電部材の上に直接接着部材を介して接合させる他、台座部材などの別部材を介して間接的に導電部材を載置してもよい。   Further, a light-emitting element that outputs not only light in the visible light region but also ultraviolet rays and infrared rays can be obtained. Furthermore, a light receiving element or the like can be mounted together with or independently of the light emitting element, and a protective element or the like can also be mounted. In addition, the conductive member may be indirectly mounted via another member such as a pedestal member in addition to being directly bonded onto the conductive member via the adhesive member.

（支持基板）
支持基板は、導電部材を形成するために用いる板状又はシート状部材であり、個片化する前に除去するため、発光装置には具備されていない部材である。 (Support substrate)
The support substrate is a plate-like or sheet-like member used for forming the conductive member, and is a member that is not included in the light-emitting device because it is removed before being separated into individual pieces.

支持基板は、ステンレス（ＳＵＳ）からなり、アルテンサイト系、フェライト系、オーステナイト系等、種々のステンレスを用いることができる。好ましくは、フェライト系のステンレスであり、特に好ましくは、４００系、３００系のものであり、更に、ＳＵＳ４３０（１０．４×１０−６／Ｋ）、ＳＵＳ４４４（１０．６×１０−６／Ｋ）、ＳＵＳ３０３（１８．７×１０−６／Ｋ）、ＳＵＳ３０４（１７．３×１０−６／Ｋ）等が好適に用いられる。４００系のステンレスは、鍍金の前処理として酸処理を行うと、３００系に比し表面が荒れやすくなる。したがって、酸処理を行った４００系のステンレスの上に鍍金層を形成すると、その鍍金層の表面も荒れやすくなる。これにより封止部材や基体を構成する樹脂との密着性を良くすることができる。また、３００系は酸処理では表面が荒れにくい。このため３００系のステンレスを用いれば、鍍金層の表面の光沢度を向上させやすく、これにより発光素子からの反射率を向上して光取り出し効率の高い発光装置とすることができる。 The support substrate is made of stainless steel (SUS), and various types of stainless steel such as altensite, ferrite, and austenite can be used. Preferably, a stainless ferritic, particularly preferably 400 system, are of 300 system, further, SUS430 (10.4 × 10 -6 /K),SUS444(10.6×10 -6 / K ), SUS303 (18.7 × 10 -6 /K),SUS304(17.3×10 -6 / K) and the like are preferably used. When the 400 series stainless steel is subjected to an acid treatment as a pretreatment for plating, the surface becomes more rough than the 300 series stainless steel. Accordingly, when a plating layer is formed on 400 series stainless steel that has been subjected to acid treatment, the surface of the plating layer is also likely to be rough. Thereby, adhesiveness with resin which comprises a sealing member and a base | substrate can be improved. In addition, the surface of 300 series is hardly roughened by acid treatment. For this reason, if 300 series stainless steel is used, it is easy to improve the glossiness of the surface of the plating layer, whereby the reflectance from the light emitting element is improved and a light emitting device with high light extraction efficiency can be obtained.

支持基板の厚みは、１０μｍ〜３００μｍ程度の板状部材を用いるのが好ましく、また、樹脂成形後の反りを緩和するために支持基板にスリット、溝、波形状の加工を施していてもよい。   The thickness of the support substrate is preferably a plate-shaped member having a thickness of about 10 μm to 300 μm, and the support substrate may be slit, grooved, or corrugated to reduce warpage after resin molding.

（金属層）
金属層は、ステンレスからなる支持基板上に設けられるものであり、Ａｕとの拡散係数が支持基板中の金属よりも小さい金属を含む。これにより、発光素子を導電部材に接合させる際の加熱によって、支持基板中に含まれるＦｅ、Ｎｉ、Ｃｒ等が、導電部材の第１層に拡散するのを抑制するバリア層として機能する。
これにより、支持基板と導電部材の間で合金化するのを抑制することができるため、後工程で支持基板を除去しやすくし、歩留まりよく発光装置を得ることができる。 (Metal layer)
A metal layer is provided on the support substrate which consists of stainless steel, and contains the metal whose diffusion coefficient with Au is smaller than the metal in a support substrate. This functions as a barrier layer that suppresses diffusion of Fe, Ni, Cr, and the like contained in the support substrate to the first layer of the conductive member due to heating when the light emitting element is bonded to the conductive member.
Accordingly, since alloying between the support substrate and the conductive member can be suppressed, the support substrate can be easily removed in a later process, and a light-emitting device can be obtained with high yield.

このような金属層として好ましい材料は、Ｔｉ、Ｐｔ、Ｐｄ、Ａｌ、Ｒｈ、Ｍｏ等が挙げられる。金属層の膜厚は、０．０２μｍ〜５μｍ程度が好ましく、更に０．０２μｍ〜１μｍ程度が好ましい。金属層は、導電部材と同様に、鍍金で形成することができる他、スパッタや蒸着等の方法でも形成することができる。   Preferred materials for such a metal layer include Ti, Pt, Pd, Al, Rh, Mo and the like. The thickness of the metal layer is preferably about 0.02 μm to 5 μm, more preferably about 0.02 μm to 1 μm. Similar to the conductive member, the metal layer can be formed by plating, or by a method such as sputtering or vapor deposition.

＜実施の形態２＞
本実施の形態の発光装置２００及びその製造方法を、図２Ａ〜図２Ｃに示す。図２Ｃは発光装置２００の断面図及びその部分拡大図を示す。 <Embodiment 2>
2A to 2C show a light emitting device 200 and a manufacturing method thereof according to the present embodiment. FIG. 2C shows a cross-sectional view of the light emitting device 200 and a partially enlarged view thereof.

本実施の形態において、発光装置２００は、図１Ａに示す発光装置と略同様の外観をしており、発光素子２０２と、発光素子２０２と電気的に接続される上面を有する一対の導電部材２０１と、導電部材２０１の外縁と接して保持する基体２０３とを有している。基体２０３は底面部２０３ａと側壁２０３ｂからなる凹部を有しており、凹部の底面において、一対の導電部材２０１の上面の一部が露出している。導電部材２０１の下面は、基体２０３の下面（裏面）から露出されている。発光素子２０２と導電部材１０１とは、導電性ワイヤ２０５を介して電気的に接続されており、封止部材２０６がこれらの電子部品を被覆するよう、凹部内に設けられている。そして、実施の形態２では、基体２０３の下面が、導電部材２０１の下面よりも下側に突出していることを特徴とする。これによって、プリント基板等の実装基板への実装時等に短絡を生じにくくすることができる。   In this embodiment mode, the light-emitting device 200 has substantially the same appearance as the light-emitting device illustrated in FIG. 1A, and has a pair of conductive members 201 having a light-emitting element 202 and an upper surface that is electrically connected to the light-emitting element 202. And a base 203 held in contact with the outer edge of the conductive member 201. The base 203 has a recess composed of a bottom surface portion 203a and a side wall 203b, and a part of the upper surface of the pair of conductive members 201 is exposed at the bottom surface of the recess. The lower surface of the conductive member 201 is exposed from the lower surface (back surface) of the base body 203. The light emitting element 202 and the conductive member 101 are electrically connected via a conductive wire 205, and a sealing member 206 is provided in the recess so as to cover these electronic components. The second embodiment is characterized in that the lower surface of the base 203 protrudes below the lower surface of the conductive member 201. As a result, it is possible to make it difficult for a short circuit to occur during mounting on a mounting board such as a printed board.

このような発光装置２００は、以下のような製造方法によって得ることができる。図２Ａ、図２Ｂは、発光装置の集合体２０００を形成する工程を説明する図であり、この集合体２０００を切断して個片化することで、図２Ｃに示す発光装置２００を得ることができる。実施の形態２の製造方法は、支持基板に設ける金属層と保護膜との形成順序を、実施の形態１と逆にする、すなわち、先に保護膜を形成した後に金属層を形成する点が実施の形態１と異なる。以下、主として実施の形態１と異なる点について説明し、他の方法については実施の形態１と同様の方法を用いることができるため適宜省略する。   Such a light emitting device 200 can be obtained by the following manufacturing method. 2A and 2B are diagrams for explaining a process of forming the light emitting device assembly 2000. By cutting the assembly 2000 into pieces, the light emitting device 200 shown in FIG. 2C can be obtained. it can. In the manufacturing method of the second embodiment, the formation order of the metal layer and the protective film provided on the support substrate is reversed from that of the first embodiment, that is, the metal layer is formed after the protective film is first formed. Different from the first embodiment. Hereinafter, differences from Embodiment 1 will be mainly described, and other methods can be omitted as appropriate because the same methods as Embodiment 1 can be used.

１．第１の工程
まず、図２Ａ（ａ）に示すように、ステンレスからなる平板状の支持基板２０７０を用意する。この支持基板の表面に、保護膜としてレジスト２０９０を塗布する。塗布したレジスト２０７０を乾燥させた後、その上部に開口部を有するマスク２１００を直接又は間接的に配置させて、図中の矢印のように紫外線を照射して露光する。その後、エッチング剤で処理することで図２Ａ（ｂ）に示すように開口部Ｋを有する保護膜２０９０が形成される。 1. First Step First, as shown in FIG. 2A (a), a flat support substrate 2070 made of stainless steel is prepared. A resist 2090 is applied as a protective film on the surface of the support substrate. After the applied resist 2070 is dried, a mask 2100 having an opening is directly or indirectly disposed on the resist 2070, and exposure is performed by irradiating ultraviolet rays as indicated by arrows in the drawing. Thereafter, a protective film 2090 having an opening K is formed as shown in FIG.

次いで、Ａｕとの拡散係数が支持基板中の金属よりも小さい金属を含む金属層２０８０を保護膜２０９０の開口部Ｋ内に露出される支持基板上に形成させる。その後、実施の形態１と同様に、第３の工程での加熱温度よりも高い温度で加熱するのが好ましい。   Next, a metal layer 2080 containing a metal whose diffusion coefficient with Au is smaller than that of the metal in the support substrate is formed on the support substrate exposed in the opening K of the protective film 2090. Thereafter, similarly to Embodiment 1, it is preferable to heat at a temperature higher than the heating temperature in the third step.

次いで、金属層２０８０の上に、金（Ａｕ）を主成分とする第１層と、更にその上にＡｕと異なる金属を主成分とする第２層とを鍍金により形成することで、図２Ａ（ｃ）に示すように保護膜２０９０の開口部Ｋ内に、金属層２０８０及びその上の導電部材２０１０が形成される。このように、金属層２０８０が導電部材２０１０と同じ形状で形成される点が実施の形態１と異なる。ここでは、金属層２０８０は導電部材２０１０に比して極めて薄く形成するのが好ましい。すなわち、この金属層２０８０は、最終工程において支持基板と共に除去されてしまうものであるため、厚く形成すると剥離しにくくなり、また、導電部材の裏面と基体の裏面との高低差が大きくなってしまうと回路基板等への実装時に不良が生じ易くなるため、薄く形成するのが好ましく、例えば、０．０２μｍ〜３μｍ程度が好ましく、更には０．０２μｍ〜１μｍ程度が好ましい。   Next, a first layer containing gold (Au) as a main component and a second layer containing a metal different from Au as a main component are formed on the metal layer 2080 by plating. As shown in (c), the metal layer 2080 and the conductive member 2010 thereon are formed in the opening K of the protective film 2090. Thus, the point that the metal layer 2080 is formed in the same shape as the conductive member 2010 is different from the first embodiment. Here, the metal layer 2080 is preferably formed extremely thin as compared with the conductive member 2010. That is, since the metal layer 2080 is removed together with the support substrate in the final step, if it is formed thick, it is difficult to peel off, and the difference in height between the back surface of the conductive member and the back surface of the base member becomes large. Therefore, it is preferable to form a thin film, for example, about 0.02 μm to 3 μm, and more preferably about 0.02 μm to 1 μm.

鍍金後、保護膜２０９０を洗浄して除去することで、図２Ａ（ｄ）に示すように互いに離間する金属層２０８０及び導電部材２０１０が複数形成される。   After plating, the protective film 2090 is washed away to form a plurality of metal layers 2080 and conductive members 2010 that are spaced apart from each other as shown in FIG. 2A (d).

２．第２の工程
次いで、図２Ｂ（ａ）に示すように、発光素子からの光を反射可能な遮光性樹脂からなり、底面部２０３０ａ及び側壁２０３０ｂを有する基体２０３０を形成する。 2. Second Step Next, as shown in FIG. 2B (a), a base body 2030 made of a light shielding resin capable of reflecting light from the light emitting element and having a bottom surface portion 2030a and side walls 2030b is formed.

３．第３の工程
次いで、図２Ｂ（ｂ）に示すように、基体の側壁２０３０ｂに囲まれた導電部材２０１０上に、金属を含有している接着部材（図示せず）を用いて発光素子２０２０を接合し、導電性ワイヤ２０５０を用いて発光素子の電極と導電部材２０１０とを接続する。 3. Third Step Next, as shown in FIG. 2B (b), the light emitting element 2020 is formed on the conductive member 2010 surrounded by the side wall 2030b of the base using an adhesive member (not shown) containing metal. The electrodes of the light emitting element and the conductive member 2010 are connected using the conductive wire 2050.

次いで、金属層の融点よりも低い温度で加熱して接着部材を溶融させ、発光素子２０２０と導電部材２０１０とを強固に接着させる。   Next, the adhesive member is melted by heating at a temperature lower than the melting point of the metal layer, and the light emitting element 2020 and the conductive member 2010 are firmly bonded.

４．第４の工程
第４の工程では、図２Ｂ（ｃ）に示すように、基体の側壁２０３０ｂに囲まれて形成される凹部に透光性樹脂からなる封止部材２０６０を形成する。 4). Fourth Step In the fourth step, as shown in FIG. 2B (c), a sealing member 2060 made of a translucent resin is formed in a recess formed by being surrounded by the side wall 2030b of the substrate.

５．第５の工程
第５の工程では、封止部材２０６０が硬化後に、図２Ｂ（ｃ）に示すように、支持基板２０７０を剥離するが、この際、金属層２０８０と導電部材２０１０の第１層との間を分離するような位置で剥離して除去する。ここで、金属層２０８０が、支持基板２０７０の上面の全面ではなく、導電部材２０６０と同じようにそれぞれ離間するように複数形成されているため、剥離後の支持基板２０７０の上面に、それぞれ離間する金属層２０８０が残存するように剥離させる。 5). Fifth Step In the fifth step, after the sealing member 2060 is cured, the support substrate 2070 is peeled off as shown in FIG. 2B (c). At this time, the metal layer 2080 and the first layer of the conductive member 2010 are peeled off. Are removed by peeling at a position where they are separated from each other. Here, since the plurality of metal layers 2080 are formed so as to be separated from each other in the same manner as the conductive member 2060 instead of the entire upper surface of the support substrate 2070, the metal layers 2080 are separated from the upper surface of the support substrate 2070 after peeling. The metal layer 2080 is peeled off so as to remain.

以上のような工程を経て、図２Ｂ（ｄ）に示すような発光装置に集合体２０００を得ることができる。最後に、図２Ｂ（ｄ）中に示す破線部、すなわち、基体の側壁２０３０ｂを切断するような位置で基体２０３０及び導電部材２０１０を切断することで個片化し、図２Ｃに示すような、基体（底面部）２０３の下面が、導電部材２０１の下面よりも突出している発光装置２００を得ることができる。尚、図２Ｃでは、基体の底面部２０３ａの下面が導電部材２０１の下面よりも突出している例を図示してあるが、基体の側壁２０３ｂの下面も導電部材２０１の下面よりも突出するようにすることもでき、これによりバランスよく実装することができ好ましい。   Through the above steps, the assembly 2000 can be obtained in the light emitting device as shown in FIG. 2B (d). Finally, the broken line portion shown in FIG. 2B (d), that is, the base 2030 and the conductive member 2010 are cut into pieces at a position where the side wall 2030b of the base is cut, and the base as shown in FIG. 2C. The light emitting device 200 in which the lower surface of the (bottom surface portion) 203 protrudes from the lower surface of the conductive member 201 can be obtained. 2C shows an example in which the lower surface of the bottom surface portion 203a of the base body protrudes from the lower surface of the conductive member 201, but the lower surface of the side wall 203b of the base body also protrudes from the lower surface of the conductive member 201. This is preferable because it can be mounted in a balanced manner.

本発明に係る発光装置は、小型で軽量であって、耐熱性に優れ、且つ、光取り出し効率の発光装置を得ることができ、各種表示装置、照明器具、ディスプレイ、液晶ディスプレイのバックライト光源などにも利用することができる。   The light-emitting device according to the present invention is small and lightweight, has excellent heat resistance, and can obtain a light-emitting device with light extraction efficiency. Various display devices, lighting fixtures, displays, backlight light sources for liquid crystal displays, etc. Can also be used.

１００、２００・・・発光装置
１０１、２０１・・・導電部材
１０２、２０２・・・発光素子
１０３、２０３・・・基体
１０３ａ、２０３ａ・・・基体の底面部
１０３ｂ、２０３ｂ・・・基体の側壁
Ｓ・・・基体の凹部
１０４・・・保護素子
１０５、２０５・・・導電性ワイヤ
１０６、２０６・・・封止部材
１０００、２０００・・・発光素子の集合体
１０１０、２０１０・・・導電部材
１０２０、２０２０・・・発光素子
１０３０、２０３０・・・基体
１０３０ａ、２０３０ａ・・・基体の底面部
１０３０ｂ、２０３０ｂ・・・基体の側壁
１０５０、２０５０・・・導電性ワイヤ
１０６０、２０６０・・・封止部材
１０７０、２０７０・・・支持基板
１０８０、２０８０・・・金属層
１０９０、２０９０・・・保護膜（レジスト）
１１００、２１００・・・マスク 100, 200: Light emitting devices 101, 201: Conductive members 102, 202: Light emitting elements 103, 203 ... Base body 103a, 203a ... Bottom surface of base body 103b, 203b ... Side wall of base body S: concave portion 104 of substrate 104 ... protective element 105, 205 ... conductive wire 106, 206 ... sealing member 1000, 2000 ... aggregate of light emitting elements 1010, 2010 ... conductive member 1020, 2020 ... Light emitting elements 1030, 2030 ... Base 1030a, 2030a ... Bottom of base 1030b, 2030b ... Side walls 1050, 2050 ... Conductive wires 1060, 2060 ... Sealed Stop member 1070, 2070 ... Support substrate 1080, 2080 ... Metal layer 1090, 2090 ... Protective film (resist)
1100, 2100 ... Mask

Claims (6)

ステンレスからなる支持基板上に、複数の開口部を有する保護膜を形成後、該開口部内に、Ａｕとの拡散係数が前記支持基板中の金属よりも小さい金属を含む金属層を形成し、その上にＡｕを主成分とする第１層及び該第１層上に積層されＡｕと異なる金属を主成分とする第２層とを有する導電部材を複数個所形成する第１の工程と、
前記保護膜を除去後、複数の導電部材の間に露出される前記支持基板上に、遮光性樹脂からなる基体を設ける第２の工程と、
前記導電部材又は基体の上面に、金属を含有している接着部材を介して発光素子を載置して、前記金属層の融点よりも低い温度で加熱して接着部材を溶融させる第３の工程と、
前記発光素子を透光性の封止部材で被覆する第４の工程と、
前記金属層と前記第１の層との間で剥離することで前記支持基板を除去し、除去することで、前記基体の下面を前記導電部材の下面よりも下側に突出させた後、発光装置を個片化する第５の工程と、
を有することを特徴とする発光装置の製造方法。
 After forming a protective film having a plurality of openings on a support substrate made of stainless steel, a metal layer containing a metal having a diffusion coefficient with Au smaller than that of the metal in the support substrate is formed in the openings. A first step of forming a plurality of conductive members having a first layer containing Au as a main component and a second layer stacked on the first layer and containing a metal different from Au as a main component;
A second step of providing a base made of a light-shielding resin on the support substrate exposed between the plurality of conductive members after removing the protective film ;
A third step of placing the light emitting element on the upper surface of the conductive member or the base via an adhesive member containing a metal and heating the adhesive member at a temperature lower than the melting point of the metal layer. When,
A fourth step of covering the light emitting element with a translucent sealing member;
The support substrate is removed by peeling between the metal layer and the first layer, and the lower surface of the base is protruded below the lower surface of the conductive member by removing the light. A fifth step of dividing the device into pieces;
A method for manufacturing a light-emitting device, comprising:
前記第１の工程は、前記第３の工程の加熱温度よりも高い温度で加熱する工程を含む請求項１に記載の発光装置の製造方法。
The method for manufacturing a light emitting device according to claim 1, wherein the first step includes a step of heating at a temperature higher than a heating temperature of the third step.
前記金属層は、Ｔｉ、Ｐｔ、Ｐｄ、Ａｌ、Ｒｈ、Ｍｏのいずれか１つを含む請求項１又は至請求項２に記載の発光装置の製造方法。
The light emitting device manufacturing method according to claim 1, wherein the metal layer includes any one of Ti, Pt, Pd, Al, Rh, and Mo.
前記接着部材は、共晶材料である請求項１乃至請求項３のいずれか１項に記載の発光装置の製造方法。
The method for manufacturing a light emitting device according to any one of claims 1 to 3, wherein the adhesive member is a eutectic material.
前記第２の工程は、基体として、導電部材の間に設けられる底面部と、側壁とを設ける請求項１乃至請求項４のいずれか１項に記載の発光装置の製造方法。
5. The method for manufacturing a light emitting device according to claim 1, wherein in the second step, a bottom surface provided between conductive members and a side wall are provided as a base.
前記請求項１乃至請求項５のいずれか１項に記載の発光装置の製造方法によって得られる発光装置。 The light-emitting device obtained by the manufacturing method of the light-emitting device of any one of the said Claim 1 thru | or 5 .
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