JP5493290B2 - Electronic component package - Google Patents

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JP5493290B2
JP5493290B2 JP2008121104A JP2008121104A JP5493290B2 JP 5493290 B2 JP5493290 B2 JP 5493290B2 JP 2008121104 A JP2008121104 A JP 2008121104A JP 2008121104 A JP2008121104 A JP 2008121104A JP 5493290 B2 JP5493290 B2 JP 5493290B2
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substrate
spacer
electronic component
component package
substrates
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JP2009272420A (en
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幸弘 前川
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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Description

本発明は、２枚の基板を接合部材、あるいは接合部材とスペーサによって接合した電子部品パッケージおよびその接合方法に関するものである。   The present invention relates to an electronic component package in which two substrates are joined by a joining member, or a joining member and a spacer, and a joining method thereof.

従来、半導体加速度センサや圧力センサ等においては、表面に第１の電極が形成された基板と、第２の電極が形成された可動部（振動部）を有する基板との少なくとも一方に接合部材、または接合材料とスペーサを備え、第１の電極と第２の電極を対向配置し、かつ接合部材やスペーサを介して接合した構成となっており、可動部の変位により加速度や圧力等の物理量を電気信号に変換して取り出すようになっている。   Conventionally, in a semiconductor acceleration sensor, a pressure sensor, or the like, at least one of a substrate having a first electrode formed on the surface and a substrate having a movable part (vibrating part) having a second electrode formed thereon is a bonding member, Alternatively, a bonding material and a spacer are provided, the first electrode and the second electrode are arranged to face each other and bonded via a bonding member or a spacer, and a physical quantity such as acceleration or pressure is obtained by displacement of the movable part. It is converted into an electrical signal and taken out.

このような電子部品パッケージの製造方法においては、第１の電極と第２の電極とのギャップのばらつきを抑えることがセンサの品質のばらつきを抑えることになる。このため接合部に用いられるスペーサの高さはセンサ間、または１つのセンサ内においてできるだけ一定に保つことが望ましいとされている。   In such an electronic component package manufacturing method, suppressing variations in the gap between the first electrode and the second electrode suppresses variations in sensor quality. For this reason, it is desirable to keep the height of the spacer used for the joint as constant as possible between sensors or within one sensor.

図９は特許文献１に記載された従来の静電容量式圧力センサおよびその製造方法を示すものである。図９において、１０１はダイアフラム、１０２は固定基板、１０３は第１の電極、１０４は第２の電極、１０５はスペーサ層、１０６はスペーサを示している。   FIG. 9 shows a conventional capacitive pressure sensor described in Patent Document 1 and a manufacturing method thereof. In FIG. 9, 101 is a diaphragm, 102 is a fixed substrate, 103 is a first electrode, 104 is a second electrode, 105 is a spacer layer, and 106 is a spacer.

特許文献１には、固定基板１０２とダイアフラム１０１との少なくとも一方の周縁にスペーサ層１０５とスペーサ１０６とを分離することにより、製造時は固定基板１０２とダイアフラム１０１との間隔を変形のしないスペーサ１０６で保持しながら、スペーサ層１０５を形成できるので、スペーサ層１０５の厚みをほぼ一定にでき、静電容量式圧力センサの容量ばらつきを小さくすることが記載されている。
特開平８−２４０５００号公報 In Patent Document 1, a spacer layer 105 and a spacer 106 are separated on at least one peripheral edge of the fixed substrate 102 and the diaphragm 101, so that the distance between the fixed substrate 102 and the diaphragm 101 does not change during manufacture. It is described that the spacer layer 105 can be formed while being held in place, so that the thickness of the spacer layer 105 can be made substantially constant, and the capacitance variation of the capacitive pressure sensor can be reduced.
JP-A-8-240500

しかしながら、電子部品パッケージの小型化、薄型化が急速に進み、構造も複雑になる中、前記特許文献１に記載の従来の製造方法では、２つの電極間のギャップを精度よく制御することが困難になってきている。   However, as the electronic component package is rapidly becoming smaller and thinner, and the structure is complicated, it is difficult to accurately control the gap between the two electrodes with the conventional manufacturing method described in Patent Document 1. It is becoming.

まず、電子部品パッケージの薄型化のため、２つの基板の厚み、および２つの基板間のギャップが小さくなってきているが、基板が薄くなることにより基板の加工、回路形成時に発生する反りが大きくなる傾向があるとともに、接合時などの荷重負荷時において基板が変形しやすくなっている。さらに、ギャップの設計値が小さくなることにより、これら基板の反りおよび変形がギャップに与える影響が大きくなっている。   First, the thickness of the two substrates and the gap between the two substrates are becoming smaller for the purpose of reducing the thickness of the electronic component package. However, the thinner the substrate, the greater the warpage that occurs when processing the substrate and forming the circuit. In addition, the substrate tends to be deformed when a load is applied such as during bonding. Furthermore, the influence of the warpage and deformation of the substrate on the gap increases as the design value of the gap decreases.

また、可動部の構造が小型化、複雑化することによっても、２つの基板が変形しやすくなり、ギャップの制御が困難になってきている。   Further, even when the structure of the movable part is reduced in size and complicated, the two substrates are easily deformed, and the control of the gap has become difficult.

さらに、電子部品パッケージの小型化、薄型化、構造の複雑化はギャップの制御以外にも、製造工程におけるハンドリングの困難さという問題も引き起こしている。   Furthermore, the downsizing, thinning, and complexity of the electronic component package have caused problems such as difficulty in handling in the manufacturing process in addition to the gap control.

本発明は、前記従来技術の問題を解決することに指向するものであり、電子部品パッケージの小型化、薄型化、構造の複雑化に対応して、接合する２つの基板間のギャップを精度よく制御し、優れた電子部品パッケージおよびそれを形成するため接合方法を提供することを目的とする。   The present invention is directed to solving the above-described problems of the prior art, and the gap between two substrates to be bonded can be accurately adjusted in response to downsizing, thinning, and complicated structure of electronic component packages. It is an object of the present invention to provide a controlled electronic component package and a bonding method for forming the same.

前記の目的を達成するために、本発明に係る請求項１に記載した電子部品パッケージは、第１の基板と第２の基板の面を対向配置し、第１，第２の基板の周囲の少なくとも一部を接合部材により接合してなる電子部品パッケージにおいて、第１の基板の周囲に配置され、第１の基板の辺に沿って第一基板の辺の中央部に近づくにつれて低くなるように高さを変化させた複数のスペーサと、接合部材を複数のスペーサの間に配置し、かつ接合部材の両側のスペーサの平均高さより、接合部材の高さを高く形成した接合部材とで、対向配置した基板間の距離が基板の周囲よりも中央部を小さくなるように接合部材により第１の基板と第２の基板とを接合し、スペーサを、第１基板の平面上に第１基板の各辺に垂直な方向に配置している、ことを特徴とする。 In order to achieve the above object, an electronic component package according to claim 1 according to the present invention is configured such that the surfaces of the first substrate and the second substrate are arranged to face each other and around the first and second substrates. In an electronic component package in which at least a part is bonded by a bonding member, the electronic component package is arranged around the first substrate, and becomes lower along the side of the first substrate toward the center of the side of the first substrate. A plurality of spacers having different heights are opposed to a joining member in which the joining member is disposed between the plurality of spacers and the height of the joining member is higher than the average height of the spacers on both sides of the joining member. The first substrate and the second substrate are bonded by a bonding member so that the distance between the arranged substrates is smaller in the center than the periphery of the substrate, and the spacer is placed on the plane of the first substrate on the first substrate. are arranged in a direction perpendicular to each side, the Japanese To.

また、請求項２に記載した発明は、請求項１の電子部品パッケージにおいて、第２の基板には穴が形成されていることを特徴とする。 Further, the invention described in claim 2, in the electronic component package according to claim 1, the second substrate, characterized that you have a hole is formed.

また、請求項３に記載した発明は、請求項１または２の電子部品パッケージにおいて、接合部材の硬度はスペーサの硬度より低いことを特徴とする。 According to a third aspect of the present invention, in the electronic component package of the first or second aspect , the hardness of the joining member is lower than the hardness of the spacer .

前記電子部パッケージの構成および接合方法によれば、電子部品パッケージとなる対向配置した第１，第２の基板の距離を制御して、精度よく接合することができる。   According to the configuration and the bonding method of the electronic part package, the distance between the first and second substrates arranged to face each other as the electronic component package can be controlled and bonded with high accuracy.

本発明によれば、電子部品パッケージの小型化、薄型化、構造の複雑化に対応して、２つの基板間の距離（ギャップ）を精度よく制御して接合することができるという効果を奏する。   According to the present invention, there is an effect that the distance (gap) between two substrates can be accurately controlled and bonded in response to the downsizing, thinning, and complicated structure of the electronic component package.

以下、図面を参照して本発明における実施の形態を詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

（実施形態１）
図１は本発明の実施形態１における電子部品パッケージの断面図を示す図である。図１に示すように電極が形成された第１の基板１と加速度センサの機能素子が形成された第２の基板２とが、基板の辺に近づくにつれて高くなるように高さを変えた複数のスペーサ３、およびスペーサ３同士の間およびスペーサ３と基板の辺との間に配置されて、基板の辺に近づくにつれて高くなるように高さを変えた接合部材４とによって対向して接合される。このスペーサ３と接合部材４とによる接合によって、第１の基板１と第２の基板２の間には精度よく制御されたギャップ５が形成される。また、このギャップ５により第２の基板２は反った状態で第１の基板１に接合される。 (Embodiment 1)
1 is a cross-sectional view of an electronic component package according to Embodiment 1 of the present invention. As shown in FIG. 1, the first substrate 1 on which the electrodes are formed and the second substrate 2 on which the functional elements of the acceleration sensor are formed have a plurality of heights that are increased so as to approach the sides of the substrate. The spacers 3 and the spacers 3 and between the spacers 3 and between the spacers 3 and the sides of the substrate are bonded oppositely by the bonding member 4 whose height is increased so as to approach the sides of the substrate. The A gap 5 controlled with high accuracy is formed between the first substrate 1 and the second substrate 2 by the bonding by the spacer 3 and the bonding member 4. Further, the second substrate 2 is bonded to the first substrate 1 in a warped state by the gap 5.

図２（ａ）は本発明の実施形態１における第１の基板の平面図、（ｂ）は断面図を示す図である。図２（ａ）、（ｂ）に示すように、第１の基板１に高さの異なる複数のスペーサ３が基板の各辺に平行に２列ずつ形成されており、スペーサ３とスペーサ３の間およびスペーサ３と基板の辺との間に、接合部材４がスペーサ３よりも高くなるように形成されている。   FIG. 2A is a plan view of the first substrate in Embodiment 1 of the present invention, and FIG. 2B is a cross-sectional view. As shown in FIGS. 2A and 2B, a plurality of spacers 3 having different heights are formed on the first substrate 1 in two rows parallel to each side of the substrate. The joining member 4 is formed so as to be higher than the spacer 3 between the spacer 3 and the side of the substrate.

第１の基板１の材料はシリコン、ガラスなどが使用されることが多いが、その他どのような材料でも構わない。第１の基板１のサイズは電子部品パッケージの小型、薄型化に伴い、数ｍｍ角、厚さ１００μｍ〜２００μｍ程度の場合が多くなってきている。   The material of the first substrate 1 is often silicon, glass, etc., but any other material may be used. The size of the first substrate 1 is increasing in the order of several mm square and thickness of about 100 μm to 200 μm as the electronic component package becomes smaller and thinner.

また、スペーサ３は基板をエッチングなどにより加工して形成する。あるいは、Ｎｉなど硬度の高い材料をメッキなどで形成する方法などが考えられ、この高さは数μｍ程度の場合が多い。接合部材４はスペーサ３よりも高さが高くなるように形成し、材料としてはスペーサ３よりも硬度が低いものがよい。例えば、Ａｕメッキ、樹脂系の接着剤などである。接合部材４の高さをスペーサ３の高さより高くしておくのは、第１の基板１と第２の基板２を加圧接合する際に、まず接合部材４と第２の基板２が接触し、接合部材４が変形することによって十分な接合強度をもたせるためである。接合部材４の断面形状については、図２では長方形の断面になっているが、台形、三角、円などどのような形状でもよい。   The spacer 3 is formed by processing the substrate by etching or the like. Alternatively, a method of forming a high hardness material such as Ni by plating or the like can be considered, and this height is often about several μm. The joining member 4 is formed to have a height higher than that of the spacer 3, and a material having a hardness lower than that of the spacer 3 is preferable. For example, Au plating, resin adhesive, and the like. The reason why the height of the bonding member 4 is set higher than the height of the spacer 3 is that when the first substrate 1 and the second substrate 2 are pressure bonded, the bonding member 4 and the second substrate 2 are first brought into contact with each other. This is because the joining member 4 is deformed to provide sufficient joining strength. The cross-sectional shape of the joining member 4 is a rectangular cross-section in FIG. 2, but any shape such as a trapezoid, a triangle, or a circle may be used.

図３（ａ）は本実施形態１における第２の基板の平面図、（ｂ）は断面図を示す図である。図３（ａ），（ｂ）に示すように、加速度センサでは一般的におもり７が梁６によって支持されている構造となっており、基板上に穴８が形成されている場合が多い。   FIG. 3A is a plan view of the second substrate in Embodiment 1, and FIG. 3B is a cross-sectional view. As shown in FIGS. 3A and 3B, the acceleration sensor generally has a structure in which the weight 7 is supported by the beam 6, and a hole 8 is often formed on the substrate.

また、第２の基板２の材料はシリコンを使用する場合が多いが、どのような材料でも構わない。サイズは前述した第１の基板１と同様で、数ｍｍ角、厚さ１００μｍ〜２００μｍ程度の場合が多い。ただし、梁６の部分は数十μｍ以下になるなど非常に弱い構造になる場合がある。このような構造および薄さのために、基板が図３（ｂ）の断面図に示すように反っている場合が多い。反り量としては、サブミクロン〜１μｍと小さいが、図１に示す２つの基板の接合後のギャップ５は数μｍであることを考えると影響が非常に大きい。   The material of the second substrate 2 often uses silicon, but any material may be used. The size is the same as that of the first substrate 1 described above, and is often several mm square and a thickness of about 100 μm to 200 μm. However, the beam 6 may have a very weak structure, such as a few tens of μm or less. Due to such a structure and thinness, the substrate is often warped as shown in the cross-sectional view of FIG. The amount of warping is as small as submicron to 1 μm, but the influence is very large considering that the gap 5 after joining the two substrates shown in FIG. 1 is several μm.

従来は基板に薄膜形成、穴加工などを施す際に、できるだけ反りが発生しないような回路パターン設計、薄膜形成条件出し、穴加工条件出しなどを行っていたが、反りを小さくしようとすると上に凸になるか下に凸になるかが個々の基板によってばらついてしまう。本発明では、このような加工工程で発生する反りをなくすのではなく、第１の基板１と対向する面の中央部が凸になるように加工条件出しを行う。一般に反りをなくすようにするのは困難であるが、ある一定の方向に反らせるというのは容易にできる場合が多い。形状については、本実施形態１では、図３のような形状を例としているが、基板厚さが薄いもの、構造が複雑でなく剛性がないもの、膜の構成が複雑で反りやすいものは特にどのような形状のものであっても本発明による効果が大きい。   Conventionally, when performing thin film formation and hole processing on a substrate, circuit pattern design, thin film formation condition determination, hole processing condition determination, etc. that do not cause warpage as much as possible were performed, but when trying to reduce warpage Whether it becomes convex or convex downward varies depending on the individual substrates. In the present invention, the processing conditions are determined so that the central portion of the surface facing the first substrate 1 is convex, instead of eliminating the warp that occurs in such a processing step. In general, it is difficult to eliminate warping, but it is often easy to warp in a certain direction. As for the shape, in Embodiment 1, the shape as shown in FIG. 3 is taken as an example. However, the substrate having a thin thickness, the structure is not complicated and not rigid, and the film configuration is complicated and easily warps. The effect of the present invention is great regardless of the shape.

図４は本実施形態１における接合方法を示す図である。図４に示すように、第１の基板１と第２の基板２を加圧して接合するが、基板が反っていない場合は、基板保持部９のようにできる限り平面で硬度の高いもので加圧することが望ましい。一方、基板が反っている場合には、図４に示すように弾性体１０を介して加圧する。あるいは、基板の反り形状に近い形状に加工した硬度の高い材料で加圧する。   FIG. 4 is a diagram showing a bonding method according to the first embodiment. As shown in FIG. 4, the first substrate 1 and the second substrate 2 are pressed and joined, but when the substrates are not warped, they are as flat and as hard as possible like the substrate holding portion 9. It is desirable to apply pressure. On the other hand, when the substrate is warped, pressure is applied through the elastic body 10 as shown in FIG. Alternatively, pressure is applied with a material having high hardness processed into a shape close to the warped shape of the substrate.

また、第１の基板１のスペーサ３の高さは、第２の基板２の反り形状に近くなるように決定することが望ましく、第１の基板１の接合部材４の配置は、図４のような基板の場合はスペーサ３とスペーサ３の間およびスペーサ３と基板の辺の間に配置するのがよい。これは、圧接された接合部材４に、接合完了後に弾性で元に戻ろうとする力が働き、第１の基板１と第２の基板２を接合した後の形状が、基板の中央部よりも辺に近い部分のほうが、ギャップ５が大きくなる方向に変形するように働くためである。   Further, it is desirable that the height of the spacer 3 of the first substrate 1 is determined so as to be close to the warped shape of the second substrate 2, and the arrangement of the bonding members 4 of the first substrate 1 is as shown in FIG. In the case of such a board | substrate, it is good to arrange | position between the spacer 3 and the spacer 3, and between the spacer 3 and the edge | side of a board | substrate. This is because the force that is elastically restored to the original state is applied to the bonded member 4 that has been pressed, and the shape after the first substrate 1 and the second substrate 2 are bonded is more than the central portion of the substrate. This is because the portion closer to the side works to be deformed in the direction in which the gap 5 becomes larger.

接合方法としては、加熱圧接でもよいが、望ましくは、接合部材４としてＡｕを用いて、真空中でプラズマ処理した後、常温または低温で圧接することが望ましい。この例では、第１の基板１にスペーサ３と接合部材４の両方を配置して、第２の基板２はいずれも配置していないが、第１の基板１にスペーサ３を配置し、第２の基板２に接合部材４を配置してもよい。また、接合部材４は２枚の基板の両方に配置してもよい。   As a bonding method, heating and pressure welding may be used. Preferably, Au is used as the bonding member 4 and plasma treatment is performed in vacuum, and then pressure bonding is performed at room temperature or low temperature. In this example, both the spacer 3 and the bonding member 4 are arranged on the first substrate 1, and neither the second substrate 2 is arranged, but the spacer 3 is arranged on the first substrate 1, The bonding member 4 may be disposed on the two substrates 2. Further, the joining member 4 may be disposed on both of the two substrates.

（実施の形態２）
図５（ａ）は本発明の実施形態２における第１の基板の平面図、（ｂ）は側面図を示す図である。前述した図２（ａ）と同様に、第２の基板２と接合する場合に、図５（ａ），（ｂ）に示すように、第１の基板１には、基板の辺に沿って中央部に近づくにつれて低くなるように高さを変化させたスペーサ３が形成され、そのスペーサ３とスペーサ３の間に接合部材４を配置してもよい。このとき接合部材４の高さは、各接合部材４の両側にあるスペーサ３の平均高さより高くすることが望ましい。これは、２つの基板を接合する際に、スペーサ３と第２の基板２が接触するよりも前に接合部材４が第２の基板２と接触するようにするためである。このほか、スペーサ３、接合部材４の配置については、さまざまなものが考えられるが、接合する第２の基板２の反り形状に近い形になるようにスペーサ３の高さ決定、接合部材４の配置をすればよい。 (Embodiment 2)
FIG. 5A is a plan view of the first substrate in Embodiment 2 of the present invention, and FIG. 5B is a side view. Similar to FIG. 2A described above, when joining to the second substrate 2, as shown in FIGS. 5A and 5B, the first substrate 1 is provided along the side of the substrate. A spacer 3 whose height is changed so as to become lower as it approaches the central portion may be formed, and the bonding member 4 may be disposed between the spacer 3 and the spacer 3. At this time, the height of the joining member 4 is preferably higher than the average height of the spacers 3 on both sides of each joining member 4. This is because when the two substrates are bonded, the bonding member 4 comes into contact with the second substrate 2 before the spacer 3 and the second substrate 2 come into contact with each other. In addition, various arrangements of the spacer 3 and the joining member 4 are conceivable. However, the height of the spacer 3 is determined so as to be a shape close to the warped shape of the second substrate 2 to be joined. Just place it.

（実施の形態３）
図６（ａ）は本発明の実施形態３における第１の基板の平面図、（ｂ）は側面図を示す図である。前述した図２（ａ）と同様に、第２の基板２と接合する場合に、図６（ａ），（ｂ）に示すように、第１の基板１には、複数のスペーサ３が形成され、それぞれのスペーサ３の上面は基板と平行ではなく中央部分が両端部より低くなるように形成されてなり、これらのスペーサ３の外側にスペーサ３よりも高さが高くなるように接合部材４を配置してもよい。 (Embodiment 3)
FIG. 6A is a plan view of the first substrate in Embodiment 3 of the present invention, and FIG. As in the case of FIG. 2A described above, when bonding to the second substrate 2, a plurality of spacers 3 are formed on the first substrate 1 as shown in FIGS. 6A and 6B. In addition, the upper surface of each spacer 3 is not parallel to the substrate but is formed so that the central portion is lower than both ends, and the joining member 4 is formed so that the height of the spacer 3 is higher than the spacer 3 outside the spacer 3. May be arranged.

これらのような各実施形態の構成をとることにより、図７に示す従来のように、第１の基板１に同じ高さのスペーサ３を配置し、反っている第２の基板２と対向させて加圧接合した場合、第２の基板２の反りが中央部で凸になったり凹になったりして安定しなかったものが、安定して第２の基板２の接合前の状態を保つことができるようになる。結果として、２つの基板間のギャップ５が安定し、電子部品パッケージの品質を安定させることができる。   By adopting the configuration of each of the embodiments as described above, the spacer 3 having the same height is arranged on the first substrate 1 so as to face the warped second substrate 2 as in the prior art shown in FIG. When the pressure bonding is performed, the warp of the second substrate 2 is not stable because the warp of the second substrate 2 becomes convex or concave at the center, and the state before the bonding of the second substrate 2 is stably maintained. Will be able to. As a result, the gap 5 between the two substrates is stabilized, and the quality of the electronic component package can be stabilized.

また、従来は、２つの基板を接合する際に、一方の基板が反っていた場合、接合時に反っている基板を吸着などで強制的にフラットにした状態で接合を行っていた。このような接合を行うと、前述したように接合後の反りが安定しない場合が多い。もし、反りが安定したとしても、接合部に残留応力が発生した状態になっているため、経時変化、熱負荷などによって接合部の強度低下、断線などが発生する可能性がある。   Conventionally, when one substrate is warped when two substrates are joined, joining is performed in a state where the warped substrate is forcibly flattened by suction or the like. When such joining is performed, warping after joining is often not stable as described above. Even if the warpage is stabilized, there is a possibility that a residual stress is generated in the joint portion, so that the strength of the joint portion may be reduced due to a change with time, a thermal load, or the like.

一方、本発明では、基板が反った状態を保持したまま接合するため、接合後も接合部に残留応力が発生することがなく、信頼性が向上する。   On the other hand, in the present invention, since the substrates are bonded while maintaining the warped state, no residual stress is generated in the bonded portion even after bonding, and the reliability is improved.

また、２次的な効果として、接合後の第２の基板２の形状が中央部で凸になることにより、電子部品パッケージのハンドリングが容易になるという利点もある。すなわち、従来では、図８に示すように第２の基板２の下面（第１の基板１と対向する面の反対側）に設けていたキャビティ１１を設けなくても、図示しない搬送アーム、ステージなどに，図３（ａ）の梁６やおもり７が接触することがなくなり、破損、傷などが発生しなくなる。   Further, as a secondary effect, there is an advantage that the electronic component package can be easily handled because the shape of the second substrate 2 after the bonding becomes convex at the center. That is, as shown in FIG. 8, the transfer arm and stage (not shown) can be provided without providing the cavity 11 provided on the lower surface of the second substrate 2 (opposite the surface facing the first substrate 1). For example, the beam 6 and the weight 7 in FIG. 3 (a) do not come into contact with each other, and breakage and scratches do not occur.

本発明の電子部品パッケージおよびその接合方法は、電子部品パッケージの小型化、薄型化、構造の複雑化に対応して、２つの基板間のギャップを精度よく制御して接合することができるという特徴を有し、電子部品パッケージの製造において、薄い、反りがある、変形しやすいなどの問題がある基板間のギャップを精度よく形成する必要がある場合に利用可能である。   The electronic component package and the bonding method thereof according to the present invention can be bonded by accurately controlling the gap between two substrates in response to downsizing, thinning, and complicated structures of the electronic component package. In the manufacture of electronic component packages, it can be used when it is necessary to accurately form a gap between substrates having problems such as thinness, warpage, and easy deformation.

本発明の実施形態１における電子部品パッケージの断面図Sectional drawing of the electronic component package in Embodiment 1 of this invention 本発明の実施形態１における第１の基板の（ａ）は平面図、（ｂ）は断面図(A) of the 1st board | substrate in Embodiment 1 of this invention is a top view, (b) is sectional drawing. 本実施形態１における第２の基板の（ａ）は平面図、（ｂ）は断面図(A) of the 2nd board | substrate in this Embodiment 1 is a top view, (b) is sectional drawing. 本実施形態１における接合方法を示す図The figure which shows the joining method in this Embodiment 1. 本発明の実施形態２における第１の基板の（ａ）は平面図、（ｂ）は側面図(A) of the 1st board | substrate in Embodiment 2 of this invention is a top view, (b) is a side view. 本発明の実施形態３における第１の基板の（ａ）は平面図、（ｂ）は側面図(A) of the 1st board | substrate in Embodiment 3 of this invention is a top view, (b) is a side view. 従来の第１の基板を用いた接合方法を示す図The figure which shows the joining method using the conventional 1st board | substrate. 従来の接合方法を示す図Diagram showing conventional joining method 従来の静電容量式圧力センサを示す（ａ）は正面図、（ｂ）は断面図(A) is a front view showing a conventional capacitive pressure sensor, and (b) is a sectional view.

符号の説明Explanation of symbols

１ 第１の基板
２ 第２の基板
３ スペーサ
４ 接合部材
５ ギャップ
６ 梁
７ おもり
８ 穴
９ 基板保持部
１０ 弾性体
１１ キャビティ
１０１ ダイアフラム
１０２ 固定基板
１０３ 第１の電極
１０４ 第２の電極
１０５ スペーサ層
１０６ スペーサ DESCRIPTION OF SYMBOLS 1 1st board | substrate 2 2nd board | substrate 3 Spacer 4 Joining member 5 Gap 6 Beam 7 Weight 8 Hole 9 Substrate holding part 10 Elastic body 11 Cavity 101 Diaphragm 102 Fixed substrate 103 1st electrode 104 2nd electrode 105 Spacer layer 106 Spacer

Claims (3)

第１の基板と第２の基板の面を対向配置し、前記第１，第２の基板の周囲の少なくとも一部を接合部材により接合してなる電子部品パッケージにおいて、
前記第１の基板の周囲に配置され、前記第１の基板の辺に沿って前記第一基板の辺の中央部に近づくにつれて低くなるように高さを変化させた複数のスペーサと、
前記接合部材を前記複数のスペーサの間に配置し、かつ前記接合部材の両側の前記スペーサの平均高さより、前記接合部材の高さを高く形成した前記接合部材とで、
前記対向配置した基板間の距離が前記基板の周囲よりも中央部を小さくなるように前記接合部材により前記第１の基板と前記第２の基板とを接合し、前記スペーサを、前記第１基板の平面上に前記第１基板の各辺に垂直な方向に配置している、ことを特徴とする電子部品パッケージ。 In an electronic component package in which the surfaces of the first substrate and the second substrate are arranged to face each other, and at least a part of the periphery of the first and second substrates is bonded by a bonding member.
A plurality of spacers arranged around the first substrate and having a height changed so as to approach the center of the side of the first substrate along the side of the first substrate;
The bonding member is disposed between the plurality of spacers, and the bonding member is formed such that the height of the bonding member is higher than the average height of the spacers on both sides of the bonding member.
The first substrate and the second substrate are bonded by the bonding member so that the distance between the substrates arranged opposite to each other is smaller in the center than the periphery of the substrate, and the spacer is connected to the first substrate. An electronic component package, wherein the electronic component package is disposed in a direction perpendicular to each side of the first substrate on a plane of the first substrate . 前記第２の基板には穴が形成されていることを特徴とする請求項１に記載の電子部品パッケージ。   The electronic component package according to claim 1, wherein a hole is formed in the second substrate. 前記接合部材の硬度は前記スペーサの硬度より低いことを特徴とする請求項１または２に記載の電子部品パッケージ。   The electronic component package according to claim 1, wherein a hardness of the joining member is lower than a hardness of the spacer.
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