JP5479796B2 - Component arrangement structure of magnetic sensor - Google Patents

Component arrangement structure of magnetic sensor Download PDF

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JP5479796B2
JP5479796B2 JP2009169059A JP2009169059A JP5479796B2 JP 5479796 B2 JP5479796 B2 JP 5479796B2 JP 2009169059 A JP2009169059 A JP 2009169059A JP 2009169059 A JP2009169059 A JP 2009169059A JP 5479796 B2 JP5479796 B2 JP 5479796B2
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達之 山口
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Tokai Rika Co Ltd
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Description

本発明は、自身にかかる磁界の向きや強さを検出し、その検出量に応じた検出信号を出力可能な磁気センサの部品配置構造に関する。   The present invention relates to a component arrangement structure of a magnetic sensor capable of detecting the direction and strength of a magnetic field applied to itself and outputting a detection signal corresponding to the detected amount.

従来から周知のように、被検出体の位置や回転量等を検出するセンサの一種として、周囲に発生する磁界の変化量を検出することでこれらの位置変化を求める磁気センサが広く使用されている。磁気センサには、例えば磁石から磁気検出素子チップにバイアス磁界を付与し、被検出体の接近や離間により変化するバイアス磁界の変化を磁気検出素子で検出することで位置変化を見る種類のもの（例えば特許文献１〜６等参照）が周知である。この種の磁気センサは、例えば微弱な磁界でも検出可能であるので、極めて検出感度の高い磁気センサとして種々の分野で使用されている。   As is well known in the art, as a type of sensor that detects the position, rotation amount, etc. of a detected object, magnetic sensors that obtain these position changes by detecting the amount of change in the magnetic field generated around them are widely used. Yes. For example, the magnetic sensor applies a bias magnetic field from a magnet to a magnetic detection element chip, and detects a change in the bias magnetic field that changes due to the approach or separation of the detected object by the magnetic detection element (see FIG. For example, see Patent Documents 1 to 6). Since this type of magnetic sensor can detect even a weak magnetic field, for example, it is used in various fields as a magnetic sensor with extremely high detection sensitivity.

特開２００７−２１８７００号公報JP 2007-218700 A 特開２００６−３２９８８８号公報JP 2006-329888 A 特開２００６−２６７１１８号公報JP 2006-267118 A 特開平９−７９８６５号公報JP-A-9-79865 特開平５−３４１０２６号公報JP-A-5-341026 特開平５−１１３４７２号公報Japanese Patent Laid-Open No. 5-113472

この磁気センサは、磁気検出素子チップと磁石とが一体に組み付けられた構造をとるが、これら２者間には、製造精度の上限の関係から、どうしても実装バラツキが発生してしまう現状がある。ところが、このような実装バラツキが存在すると、磁石から磁気検出素子チップに付与されるバイアス磁界がばらつくことになるので、これが磁気センサの検出精度の低下に繋がる問題が発生してしまう。しかし、これら２者を寸分違わず組み付けることは、製造精度上、どうしても不可能であり、このような実装バラツキを許容して、センサの検出精度を確保することができる技術の開発が要望されていた。   This magnetic sensor has a structure in which a magnetic detection element chip and a magnet are integrally assembled. However, due to the upper limit of manufacturing accuracy, there is a situation in which mounting variations are inevitably generated between the two. However, when such mounting variations exist, the bias magnetic field applied from the magnet to the magnetic detection element chip varies, which causes a problem that the detection accuracy of the magnetic sensor is lowered. However, it is impossible to assemble these two parts without any difference in terms of manufacturing accuracy, and there is a demand for the development of a technology that allows such mounting variations and ensures sensor detection accuracy. It was.

本発明の目的は、磁気検出部材とバイアス磁界発生源の磁石との間に実装バラツキが存在していても、バイアス磁界のバラツキを低く抑えることができる磁気センサの部品配置構造を提供することにある。   An object of the present invention is to provide a component arrangement structure of a magnetic sensor that can suppress variations in bias magnetic field even if there is mounting variation between a magnetic detection member and a magnet of a bias magnetic field generation source. is there.

前記問題点を解決するために、本発明では、くしば状の配置状態をとる少なくとも一対の検出素子を持った磁気検出部材と、前記検出素子にバイアス磁界を印加する磁石とを一体に備え、前記バイアス磁界の変化量を前記検出素子により検出する磁気センサの部品配置構造において、前記バイアス磁界の発生面である前記磁石の発磁面の幅を、一対の前記検出素子の並び方向の幅であるパターン幅よりも大きく設定し、かつ前記磁石の幅直交方向の端縁から前記検出素子の該幅直交方向の真ん中までの距離と、前記発磁面から前記磁気検出部材の実装面までの垂直方向の距離とを同じに設定したことを要旨とする。 In order to solve the above problems, in the present invention, a magnetic detection member having at least a pair of detection elements in a comb-like arrangement state, and a magnet for applying a bias magnetic field to the detection elements are integrally provided, In the component arrangement structure of the magnetic sensor that detects the amount of change in the bias magnetic field by the detection element, the width of the magnetism generation surface of the magnet, which is the generation surface of the bias magnetic field, is the width in the arrangement direction of the pair of detection elements. The distance between the edge of the magnet in the direction perpendicular to the width of the magnet and the center of the detection element in the direction perpendicular to the width of the magnet is set to be larger than a certain pattern width, and the vertical from the magnetism generation surface to the mounting surface of the magnetic detection member The gist is that the distance in the direction is set to be the same .

この構成によれば、発磁面の幅を検出素子のパターン幅よりも大きく設定したので、発磁面の磁界の強い箇所に磁気検出部材を配置することが可能となる。よって、磁気検出部材と磁石とを一体組み付けするに際し、磁気検出部が磁石に対して幅方向においてばらついて実装バラツキが発生しても、このバラツキ前後で大きな差のない強度のバイアス磁界が磁石から磁気検出部材に付与される。このため、もし仮に磁気検出部材が磁石に対してその幅方向にばらついても、同方向におけるバイアス磁界のバラツキを少なく抑えることが可能となる。   According to this configuration, since the width of the magnetism generating surface is set to be larger than the pattern width of the detection element, it is possible to arrange the magnetism detection member at a location where the magnetic field of the magnetism generating surface is strong. Therefore, when the magnetic detection member and the magnet are assembled together, even if the magnetic detection unit varies in the width direction with respect to the magnet and mounting variation occurs, a bias magnetic field with a strength that does not greatly differ between before and after the variation is generated from the magnet. Applied to the magnetic detection member. For this reason, even if the magnetic detection member varies in the width direction with respect to the magnet, it is possible to suppress variations in the bias magnetic field in the same direction.

また、磁石の幅直交方向の端縁から検出素子の同方向の真ん中までの距離と、発磁面から磁気検出部材の実装面までの垂直方向の距離とを同じに設定したので、バイアス磁界のうち水平部分をより多く磁気検出部材に印加することが可能となる。よって、磁気検出部材と磁石とを一体組み付けするに際し、磁気検出部材が磁石に対して長さ方向にばらついて実装バラツキが発生しても、センサ出力に変動の少ない磁界方向をとるバイアス磁界が磁気検出部材に変わらず印加される。このため、もし仮に磁気検出部材が磁石に対してその長さ方向にばらついても、同方向におけるバイアス磁界のバラツキを少なく抑えることが可能となる。 In addition, since the distance from the edge in the direction perpendicular to the width of the magnet to the center of the detection element in the same direction and the distance in the vertical direction from the magnetism generation surface to the mounting surface of the magnetic detection member are set to be the same , It becomes possible to apply more horizontal portions to the magnetic detection member. Therefore, when the magnetic detection member and the magnet are assembled together, even if the magnetic detection member varies in the length direction with respect to the magnet and mounting variations occur, a bias magnetic field that takes a magnetic field direction with little fluctuation in the sensor output is magnetic. Applied to the detection member without change. For this reason, even if the magnetic detection member varies in the length direction with respect to the magnet, it is possible to suppress variations in the bias magnetic field in the same direction.

本発明では、前記一対の検出素子の組は、２組設けられていることを要旨とする。
この構成によれば、検出素子の組を２組設けたので、被検出体の検出範囲をより広くとることが可能となる。 The gist of the present invention is that two sets of the pair of detection elements are provided.
According to this configuration, since two sets of detection elements are provided, the detection range of the detection target can be made wider.

本発明では、前記発磁面の前記幅直交方向に沿う長さを、当該幅直交方向に沿って２組設けた前記検出素子の同方向長さであるパターン間隔よりも小さく設定したことを要旨とする。   In the present invention, the length along the width orthogonal direction of the magnetomotive surface is set to be smaller than the pattern interval which is the same direction length of the two detection elements provided along the width orthogonal direction. And

この構成によれば、磁石の形状が直方体形状で済み、また検出素子の組数も２組で済むので、磁気センサを構造が簡素なものとして提供することが可能となる。
本発明では、前記一対の検出素子の組は、前記幅直交方向に沿って同一直線上に配置されるとともに、当該幅直交方向において前記磁石を挟んだ両側に配置されていることを要旨とする。 According to this configuration, the shape of the magnet may be a rectangular parallelepiped, and the number of detection elements may be two, so that the magnetic sensor can be provided with a simple structure.
The gist of the present invention is that the pair of detection elements is arranged on the same straight line along the width orthogonal direction and is arranged on both sides of the magnet in the width orthogonal direction. .

この構成によれば、磁石を挟んでその両側に移動する被検出体の動きを検出することが可能となるので、被検出体の位置をより広い範囲で検出することが可能となる。   According to this configuration, since it is possible to detect the movement of the detection object that moves to both sides of the magnet, it is possible to detect the position of the detection object in a wider range.

本発明によれば、磁気検出部材とバイアス磁界発生源の磁石との間に実装バラツキが存在していても、バイアス磁界のバラツキを低く抑えることができる。   According to the present invention, even when there is a mounting variation between the magnetic detection member and the magnet of the bias magnetic field generation source, the variation of the bias magnetic field can be suppressed low.

一実施形態における磁気センサの外観を示す斜視図。The perspective view which shows the external appearance of the magnetic sensor in one Embodiment. 磁気検出素子チップの回路構成を示す回路図。The circuit diagram which shows the circuit structure of a magnetic detection element chip | tip. 磁気センサの内部構成を示す斜視図。The perspective view which shows the internal structure of a magnetic sensor. 検出素子と磁石との配置関係を示す平面図。The top view which shows the arrangement | positioning relationship between a detection element and a magnet. （ａ）〜（ｄ）は磁気センサの製造手順を示す説明図。(A)-(d) is explanatory drawing which shows the manufacture procedure of a magnetic sensor. Ｙ−Ｚ平面視の部品配置関係と磁界強度の分布とを示す説明図。Explanatory drawing which shows the components arrangement | positioning relationship of YZ planar view, and distribution of magnetic field strength. Ｘ−Ｚ平面視の部品配置関係と磁界方向の分布とを示す説明図。Explanatory drawing which shows the components arrangement | positioning relationship of XZ planar view, and distribution of a magnetic field direction. 別例における磁気センサの一例を示す模式図。The schematic diagram which shows an example of the magnetic sensor in another example.

以下、本発明を具体化した磁気センサの部品配置構造の一実施形態を図１〜図７に従って説明する。
図１及び図３に示すように、外部からの印加磁界を検出するセンサとして、周囲発生磁界の変化量を見ることで被検出体の位置変化を検出する磁気センサ１がある。本例の磁気センサ１は、図３に示すように、周囲発生磁界を検出する磁気検出素子チップ２と、この磁気検出素子チップ２にバイアス磁界Ｈｂ（図６や図７等参照）を印加する磁石３とが一体に組み付けられている。磁気センサ１は、外部磁界によって変化するバイアス磁界Ｈｂの変化量を磁気検出素子チップ２で検知することにより、印加磁界を検出する。この磁気センサ１は、例えば電流センサ等に使用されている。なお、磁気検出素子チップ２が磁気検出部材に相当する。 Hereinafter, an embodiment of a component arrangement structure of a magnetic sensor embodying the present invention will be described with reference to FIGS.
As shown in FIGS. 1 and 3, there is a magnetic sensor 1 that detects a change in the position of a detected object by looking at the amount of change in a magnetic field generated as a sensor that detects an externally applied magnetic field. As shown in FIG. 3, the magnetic sensor 1 of the present example applies a magnetic detection element chip 2 that detects an ambient generated magnetic field and a bias magnetic field Hb (see FIG. 6, FIG. 7, etc.) to the magnetic detection element chip 2. The magnet 3 is integrally assembled. The magnetic sensor 1 detects the applied magnetic field by detecting the change amount of the bias magnetic field Hb, which is changed by the external magnetic field, by the magnetic detection element chip 2. The magnetic sensor 1 is used, for example, as a current sensor. The magnetic detection element chip 2 corresponds to a magnetic detection member.

図３に示すように、磁気センサ１には、各種部品の取り付け先としてリードフレーム４が設けられている。このリードフレーム４は、例えば金属板からなり、周縁に磁気センサ１の接続端子５が複数（本例は８つ）形成されている。本例の場合、図１及び図３の紙面左上から時計回りの順に、第１接続端子５ａ、第２接続端子５ｂ、第３接続端子５ｃ、第４接続端子５ｄ、第５接続端子５ｅ、第６接続端子５ｆ、第７接続端子５ｇ、第８接続端子５ｈとなっている。磁気センサ１は、これら接続端子５ａ〜５ｈを残してリードフレーム４を樹脂６によりモールドされることでパッケージ化されている。   As shown in FIG. 3, the magnetic sensor 1 is provided with a lead frame 4 as an attachment destination of various components. The lead frame 4 is made of, for example, a metal plate, and a plurality of connection terminals 5 (eight in this example) of the magnetic sensor 1 are formed on the periphery. In the case of this example, the first connection terminal 5a, the second connection terminal 5b, the third connection terminal 5c, the fourth connection terminal 5d, the fifth connection terminal 5e, 6 connection terminal 5f, 7th connection terminal 5g, and 8th connection terminal 5h. The magnetic sensor 1 is packaged by molding the lead frame 4 with a resin 6 while leaving these connection terminals 5a to 5h.

図３及び図４に示すように、リードフレーム４の上面中心には、ワイヤボンディングによって磁気検出素子チップ２が実装されている。磁気検出素子チップ２は、例えば１つのチップ部品からなるとともに、ＧＭＲ（Giant Magneto Resistive effect）が使用されている。磁気検出素子チップ２のチップ基板７には、同チップ２の検出素子８が複数（本例は４つ）実装されている。磁気検出素子チップ２は、これら検出素子８，８…で磁石３のバイアス磁界を検出することにより検出信号を出力する。   As shown in FIGS. 3 and 4, the magnetic detection element chip 2 is mounted at the center of the upper surface of the lead frame 4 by wire bonding. The magnetic detection element chip 2 is made of, for example, one chip component and uses GMR (Giant Magneto Resistive effect). A plurality (four in this example) of detection elements 8 of the chip 2 are mounted on the chip substrate 7 of the magnetic detection element chip 2. The magnetic detection element chip 2 outputs a detection signal by detecting the bias magnetic field of the magnet 3 with these detection elements 8, 8.

これら検出素子８，８…は、磁気抵抗から形成されるとともに、２つで１つの組をなしている。このように、検出素子８を２つで１組とするのは、磁気検出素子チップ２を２重系とするためである。本例の場合、第１検出素子８ａと第２検出素子８ｂとが組をなし、第３検出素子８ｃと第４検出素子８ｄとが組をなすとともに、８ａ，８ｂの組と８ｃ，８ｄの組とが互いに対向する位置に配置されている。これら検出素子８ａ〜８ｄは、くしば状（つづら折り形状）に折り返されたパターン形状をとり、組をなすもの同士が互い違いに折り返されて１つの組を形成している。なお、くしば状とは、組をなす検出素子８，８同士が違いに向き合うとともに、矩形状に互い違いに折り返された形状をいう。   These detection elements 8, 8... Are formed of a magnetic resistance and form a set of two. The reason why the two detection elements 8 are combined into one set is to make the magnetic detection element chip 2 a double system. In the case of this example, the first detection element 8a and the second detection element 8b form a set, the third detection element 8c and the fourth detection element 8d form a set, and the set of 8a and 8b and the set of 8c and 8d. The set is disposed at a position facing each other. These detection elements 8a to 8d have a pattern shape that is folded back into a comb shape (a zigzag folded shape), and the elements that form a pair are alternately folded back to form one set. The comb-like shape refers to a shape in which the detection elements 8 and 8 forming a pair face each other and are folded back into a rectangular shape.

また、第１検出素子８ａと第２検出素子８ｂとの組は、チップ基板７の一方側の半面９（図４の紙面上側の半面）に取り付けられ、ともに同一方向の磁界を検出する。第１検出素子８ａは、その一端Ｐ１がボンディングワイヤ１０を介して第１接続端子５ａに接続され、その他端Ｐ８がボンディングワイヤ１１を介して第８接続端子５ｈに接続されている。第２検出素子８ｂは、その一端Ｐ２がボンディングワイヤ１２を介して第２接続端子５ｂに接続され、その他端Ｐ７がボンディングワイヤ１３を介して第７接続端子５ｇに接続されている。なお、パターン長さ方向Ｘとは検出素子８の長手方向の向きのことをいい、幅直交方向に相当する。   The set of the first detection element 8a and the second detection element 8b is attached to one half surface 9 of the chip substrate 7 (the half surface on the upper side of FIG. 4), and both detect magnetic fields in the same direction. The first detection element 8a has one end P1 connected to the first connection terminal 5a via the bonding wire 10 and the other end P8 connected to the eighth connection terminal 5h via the bonding wire 11. One end P2 of the second detection element 8b is connected to the second connection terminal 5b via the bonding wire 12, and the other end P7 is connected to the seventh connection terminal 5g via the bonding wire 13. The pattern length direction X refers to the longitudinal direction of the detection element 8 and corresponds to the width orthogonal direction.

更に、第３検出素子８ｃと第４検出素子８ｄとの組は、チップ基板７の他方側の半面１４（図４の紙面下側の半面）に取り付けられ、第１検出素子８ａ及び第２検出素子８ｂとは逆方向を向く磁界を検出する。８ａ，８ｂの組と、８ｃ，８ｄの組とは、検出素子８のパターン長さ方向（図３及び図４の矢印Ｘ方向）において同一直線上に配置されている。第３検出素子８ｃは、その一端Ｐ３がボンディングワイヤ１５を介して第３接続端子５ｃに接続され、その他端Ｐ６がボンディングワイヤ１６を介して第６接続端子５ｆに接続されている。また、第４検出素子８ｄは、その一端Ｐ４がボンディングワイヤ１７を介して第４接続端子５ｄに接続され、その他端Ｐ５がボンディングワイヤ１８を介して第５接続端子５ｅに接続されている。   Further, the set of the third detection element 8c and the fourth detection element 8d is attached to the other half surface 14 of the chip substrate 7 (the half surface on the lower side in FIG. 4), and the first detection element 8a and the second detection element 8a. A magnetic field directed in the opposite direction to the element 8b is detected. The set of 8a and 8b and the set of 8c and 8d are arranged on the same straight line in the pattern length direction of the detection element 8 (the direction of the arrow X in FIGS. 3 and 4). The third detection element 8c has one end P3 connected to the third connection terminal 5c via the bonding wire 15 and the other end P6 connected to the sixth connection terminal 5f via the bonding wire 16. The fourth detection element 8d has one end P4 connected to the fourth connection terminal 5d via the bonding wire 17 and the other end P5 connected to the fifth connection terminal 5e via the bonding wire 18.

また、リードフレーム４の裏面には、例えば接着剤等により磁石３が取り付けられている。磁石３は、例えば永久磁石が使用され、チップ基板７の垂直方向（図３の矢印Ｚ方向）に着磁されている。本例の場合、磁石３の上面がＮ極で、下面がＳ極に着磁されている。磁石３は、自身の上面を磁界発生面、即ち発磁面１９としてバイアス磁界Ｈｂを検出素子８に付与する。発磁面１９は、チップ基板７の実装面７ａに対して平行に沿う平面をとっている。また、磁石３は、検出素子８のパターン長さ方向Ｘにおいて長く、パターン幅方向（図３及び図４の矢印Ｙ方向）において短い直方体形状をとっている。なお、パターン幅方向Ｙとは組をなす検出素子８，８のパターの重なり方向に沿う向きのことをいい、並び方向に相当する。   Moreover, the magnet 3 is attached to the back surface of the lead frame 4 by, for example, an adhesive. For example, a permanent magnet is used as the magnet 3 and is magnetized in the vertical direction of the chip substrate 7 (the arrow Z direction in FIG. 3). In this example, the upper surface of the magnet 3 is magnetized with an N pole, and the lower surface is magnetized with an S pole. The magnet 3 applies a bias magnetic field Hb to the detection element 8 with its upper surface as a magnetic field generating surface, that is, a magnetic generating surface 19. The magnetism generating surface 19 is a plane that is parallel to the mounting surface 7 a of the chip substrate 7. The magnet 3 has a rectangular parallelepiped shape that is long in the pattern length direction X of the detection element 8 and short in the pattern width direction (arrow Y direction in FIGS. 3 and 4). The pattern width direction Y refers to the direction along the overlapping direction of the putters of the detection elements 8 and 8 forming a pair, and corresponds to the arrangement direction.

ここで、磁気検出素子チップ２に磁界が付与された際は、図２に示すように、第１検出素子８ａ及び第２検出素子８ｂには、同じ方向の磁界が印加され、第３検出素子８ｃ及び第４検出素子８ｄには、第１検出素子８ａ及び第２検出素子８ｂとは逆方向の磁界が付与される。そして、第１検出素子８ａと第３検出素子８ｃとの間の電位差ΔＶａ、或いは第２検出素子８ｂと第４検出素子８ｄの間の電位差ΔＶｂが、磁気検出素子チップ２（磁気センサ１）の検出信号として出力される。   Here, when a magnetic field is applied to the magnetic detection element chip 2, a magnetic field in the same direction is applied to the first detection element 8a and the second detection element 8b as shown in FIG. A magnetic field in a direction opposite to that of the first detection element 8a and the second detection element 8b is applied to the 8c and the fourth detection element 8d. The potential difference ΔVa between the first detection element 8a and the third detection element 8c, or the potential difference ΔVb between the second detection element 8b and the fourth detection element 8d is the magnetic detection element chip 2 (magnetic sensor 1). It is output as a detection signal.

また、磁気センサ１を製造する際、まずは図５（ａ）に示すように、用意したリードフレーム４の上面中央に磁気検出素子チップ２を乗せ、この磁気検出素子チップ２をワイヤボンディングによりリードフレーム４に実装する。続いて、同図（ｂ）に示すように、リードフレーム４の裏面において、磁気検出素子チップ２の直下位置に未着磁の磁石３を実装する。そして、同図（ｃ）に示すように、リードフレーム４を樹脂６によりパッケージ化し、パッケージ化の後、磁石３を着磁する。続いて、同図（ｄ）に示すように、リードフレーム４から不要な箇所を切断し、切り残した箇所を接続端子５ａ〜５ｈとする。以上の工程を経て、磁気センサ１が製造される。   When the magnetic sensor 1 is manufactured, first, as shown in FIG. 5A, the magnetic detection element chip 2 is placed on the center of the upper surface of the prepared lead frame 4, and the magnetic detection element chip 2 is attached to the lead frame by wire bonding. 4 is implemented. Subsequently, as shown in FIG. 2B, an unmagnetized magnet 3 is mounted on the back surface of the lead frame 4 at a position directly below the magnetic detection element chip 2. Then, as shown in FIG. 3C, the lead frame 4 is packaged with a resin 6, and the magnet 3 is magnetized after packaging. Subsequently, as shown in FIG. 4D, unnecessary portions are cut from the lead frame 4, and the remaining portions are defined as connection terminals 5a to 5h. The magnetic sensor 1 is manufactured through the above steps.

図６に示すように、磁石３の発磁面１９の幅（以下、発磁面幅Ｗａと記す）は、検出素子８のパターン幅Ｗｂよりも大きく設定されている。なお、検出素子８のパターン幅Ｗｂよりも大きくとは、同図を見ても分かるように、非常に大きな差をもってサイズを大きくすることをいう。また、発磁面幅Ｗａの中心とパターン幅Ｗｂの中心とは一致するここで、発磁面幅Ｗａは、磁石３の発磁面１９におけるパターン幅方向Ｙのサイズ（大きさ）に相当する。また、検出素子８のパターン幅Ｗｂは、同一の組の２つの検出素子８，８においてそのパターン幅方向Ｙに沿う部材厚さに相当する。   As shown in FIG. 6, the width of the magnetism generating surface 19 of the magnet 3 (hereinafter referred to as magnetism generating surface width Wa) is set larger than the pattern width Wb of the detection element 8. Note that “larger than the pattern width Wb of the detection element 8” means increasing the size with a very large difference, as can be seen from FIG. Further, the center of the magnetomotive surface width Wa coincides with the center of the pattern width Wb. Here, the magnetomotive surface width Wa corresponds to the size (size) in the pattern width direction Y of the magnetism generating surface 19 of the magnet 3. . Further, the pattern width Wb of the detection element 8 corresponds to a member thickness along the pattern width direction Y in the two detection elements 8 and 8 of the same set.

また、図７に示すように、磁石３の発磁面１９においてパターン長さ方向Ｘの端縁２０から検出素子８の同方向の真ん中２１までの距離（以下、第１距離Ｌ１と記す）と、発磁面１９からチップ基板７の実装面７ａまでの垂直方向Ｚの距離（以下、第２距離Ｌ２と記す）とが同程度に設定されている。即ち、磁石３の発磁面１９の長さ（以下、発磁面長さＫ１と記す）は、検出素子８のパターン間隔Ｋ２よりも小さく設定されている。また、発磁面長さＫ１の中心とパターン間隔Ｋ２の中心とは一致する。なお、発磁面長さＫ１は、磁石３のパターン長さ方向Ｘにおけるサイズ（大きさ）に相当する。また、検出素子８のパターン間隔Ｋ２は、一方の組の検出素子８ａ（８ｂ）の真ん中２１から他方の組の検出素子８ｃ（８ｄ）の真ん中２１の間の距離に相当する。   Further, as shown in FIG. 7, the distance from the edge 20 in the pattern length direction X to the middle 21 in the same direction of the detection element 8 on the magnetism generating surface 19 of the magnet 3 (hereinafter referred to as a first distance L1). The distance in the vertical direction Z (hereinafter referred to as the second distance L2) from the magnetism generating surface 19 to the mounting surface 7a of the chip substrate 7 is set to be approximately the same. That is, the length of the magnetism generating surface 19 of the magnet 3 (hereinafter referred to as the magnetizing surface length K1) is set to be smaller than the pattern interval K2 of the detection element 8. Further, the center of the magnetomotive surface length K1 coincides with the center of the pattern interval K2. The magnetomotive surface length K1 corresponds to the size (size) of the magnet 3 in the pattern length direction X. The pattern interval K2 of the detection elements 8 corresponds to the distance between the middle 21 of one set of detection elements 8a (8b) and the middle 21 of the other set of detection elements 8c (8d).

さて、図６の磁界強度の分布図に示すように、発磁面１９のバイアス磁界Ｈｂは、パターン長さ方向Ｘの中央部分に高い値が集まって出力される傾向がある。そこで、本例においては、発磁面幅Ｗａを検出素子８のパターン幅Ｗｂよりも大きく設定したので、もし仮に実装時において磁気検出素子チップ２と磁石３との間に実装バラツキが発生しても、結果として検出素子８が磁界強度の高い箇所に位置する状態が保たれる。よって、磁気検出素子チップ２と磁石３との間に実装バラツキが発生しても、常に高いバイアス磁界Ｈｂが検出素子８に付与されるので、実装バラツキがバイアス磁界Ｈｂのバラツキに影響を及ぼし難くなる。   Now, as shown in the distribution diagram of the magnetic field strength in FIG. 6, the bias magnetic field Hb of the magnetism generating surface 19 tends to be gathered and output at a central portion in the pattern length direction X. Therefore, in this example, since the magnetomotive surface width Wa is set to be larger than the pattern width Wb of the detection element 8, there is a variation in mounting between the magnetic detection element chip 2 and the magnet 3 during mounting. However, as a result, the state where the detection element 8 is located at a location where the magnetic field strength is high is maintained. Therefore, even if a mounting variation occurs between the magnetic detection element chip 2 and the magnet 3, a high bias magnetic field Hb is always applied to the detection element 8, so that the mounting variation hardly affects the variation of the bias magnetic field Hb. Become.

また、図７の磁界方向の分布図に示すように、発磁面１９から発生するバイアス磁界Ｈｂは、磁石３の端縁２０から少し外側に離れた箇所において水平成分２２が多くとれる傾向にある。検出素子８は水平成分２２の検出時に高出力を出すので、水平成分２２の分布帯に検出素子８が位置していれば、検出素子８の安定した出力の確保に効果が高い。よって、本例の場合、発磁面長さＫ１を検出素子８のパターン間隔Ｋ２よりも小さく設定したので、バイアス磁界Ｈｂの水平成分２２を、より多く検出素子８に付与可能となる。このため、磁気検出素子チップ２と磁石３との間に実装バラツキが発生しても、これがバイアス磁界Ｈｂのバラツキに影響を及ぼし難くなる。   Further, as shown in the distribution diagram in the magnetic field direction of FIG. 7, the bias magnetic field Hb generated from the magnetic surface 19 tends to have a large horizontal component 22 at a position slightly away from the edge 20 of the magnet 3. . Since the detection element 8 outputs a high output when the horizontal component 22 is detected, if the detection element 8 is located in the distribution band of the horizontal component 22, the effect of securing a stable output of the detection element 8 is high. Therefore, in the case of this example, since the magnetomotive surface length K1 is set to be smaller than the pattern interval K2 of the detection element 8, more horizontal component 22 of the bias magnetic field Hb can be applied to the detection element 8. For this reason, even if a mounting variation occurs between the magnetic detection element chip 2 and the magnet 3, this hardly affects the variation of the bias magnetic field Hb.

本実施形態の構成によれば、以下に記載の効果を得ることができる。
（１）発磁面幅Ｗａを検出素子８のパターン幅Ｗｂよりも大きく設定し、磁石３の端縁２０から検出素子８の真ん中２１までの第１距離Ｌ１と、発磁面１９から実装面７ａまでの第２距離Ｌ２とを同程度に設定した。このため、磁気検出素子チップ２と磁石３とを一体に組み付けた際に、これら２者の間に実装バラツキが発生しても、これがバイアス磁界Ｈｂのバラツキに影響を与え難くなる。よって、部品組み付けの実装バラツキが発生しても、位置検出精度の悪化に影響を及ぼし難くすることができる。 According to the configuration of the present embodiment, the following effects can be obtained.
(1) The magnetomotive surface width Wa is set larger than the pattern width Wb of the detection element 8, the first distance L1 from the edge 20 of the magnet 3 to the middle 21 of the detection element 8, and the magnetomotive surface 19 to the mounting surface The second distance L2 up to 7a was set to the same level. For this reason, when the magnetic detection element chip 2 and the magnet 3 are assembled together, even if a mounting variation occurs between the two, this hardly affects the variation in the bias magnetic field Hb. Therefore, even if there is a variation in the assembly of parts, it is possible to make it difficult to affect the deterioration of position detection accuracy.

（２）磁石３を挟んでチップ基板７の長さ方向の両側に検出素子８を配置し、これら検出素子８によって被検出体の位置を測定する。このため、検出素子８による検知エリアをより広くとることが可能となるので、被検出体を広い範囲で位置検出することができる。   (2) The detection elements 8 are arranged on both sides in the length direction of the chip substrate 7 with the magnet 3 interposed therebetween, and the position of the detection object is measured by these detection elements 8. For this reason, since it becomes possible to make the detection area by the detection element 8 wider, it is possible to detect the position of the detection object in a wide range.

（３）磁石３により磁気検出素子チップ２にバイアス磁界Ｈｂを印加し、このバイアス磁界Ｈｂの変化を見ることで被検出体の位置を見る形式をとる。よって、僅かな磁界変化でも反応するバイアス磁界Ｈｂにより位置検出を行うので、被検出体の位置をより感度よく測定することができる。   (3) A bias magnetic field Hb is applied to the magnetic detection element chip 2 by the magnet 3, and the change of the bias magnetic field Hb is observed to observe the position of the detected object. Therefore, since the position detection is performed by the bias magnetic field Hb that reacts even with a slight magnetic field change, the position of the detected object can be measured with higher sensitivity.

（４）磁気検出素子チップ２に同じ機能を持つ検出素子８を２つ設けて二重系としたので、もし仮に一方の検出素子８が故障しても、他方の検出素子８によって正確な位置検出を継続することが可能となる。よって、磁気センサ１が故障してもフェールセーフを確保することができる。   (4) Since two detection elements 8 having the same function are provided in the magnetic detection element chip 2 to form a double system, even if one of the detection elements 8 breaks down, the other detection element 8 can correct the position. The detection can be continued. Therefore, even if the magnetic sensor 1 breaks down, fail safe can be ensured.

（５）本例の場合、検出素子８及び磁石３の形状（大きさ）や配置位置を工夫することにより、バイアス磁界Ｈｂのバラツキを低く抑える。よって、部品の形状や配置位置を変えるという簡素な方式によって、バイアス磁界Ｈｂのバラツキを低く抑えることができる。   (5) In the case of this example, the variation in the bias magnetic field Hb is kept low by devising the shape (size) and arrangement position of the detection element 8 and the magnet 3. Therefore, the variation of the bias magnetic field Hb can be suppressed to a low level by a simple method of changing the shape and arrangement position of the components.

なお、実施形態はこれまでに述べた構成に限らず、以下の態様に変更してもよい。
・ 磁気センサ１は、検出素子８，８の組が２組からなり、しかも磁石３が立方体形状をとるものに限定されない。例えば、図８に示すように、磁石３として円板形状のものを使用し、検出素子８，８の組が隣同士のものに対して等間隔の角度をとって複数（ここでは６組）配置されるもの、即ち検出素子，８の組が円板中心を基準に放射状に配置されるものでもよい。 Note that the embodiment is not limited to the configuration described so far, and may be modified as follows.
The magnetic sensor 1 is not limited to one in which the detection elements 8 and 8 are composed of two sets, and the magnet 3 has a cubic shape. For example, as shown in FIG. 8, a disc-shaped magnet 3 is used, and a plurality of detection elements 8 and 8 are set at an equal angle with respect to adjacent ones (here, six sets). What is arranged, that is, a set of detection elements 8 may be arranged radially with respect to the center of the disk.

・ 磁気検出素子チップ２は、必ずしもＧＭＲに限定されるものではなく、例えばＭＲＥ（Magneto Resistive Element）やホール素子等を採用可能である。
・ 磁気検出素子チップ２は、１チップ部品であることに限らず、例えば１チップ化されていないものでもよい。 The magnetic detection element chip 2 is not necessarily limited to the GMR, and for example, an MRE (Magneto Resistive Element) or a Hall element can be used.
The magnetic detection element chip 2 is not limited to being a one-chip component, and for example, may not be a single chip.

・ 検出素子８は、必ずしも２組設けることに限らず、単に１組だけとしてもよい。即ち、実施形態で設けた２組の検出素子群を、単に片方のみとしてもよい。
・ 検出素子８の組は、必ずしも２組であることに限定されず、３組以上としてもよい。 The detection elements 8 are not necessarily provided in two sets, but may be provided in only one set. That is, the two detection element groups provided in the embodiment may be simply one.
The number of detection elements 8 is not necessarily limited to two, and may be three or more.

・ 磁石３の形状は、必ずしも長細い立方体形状をとることに限定されず、例えば円柱形状としてもよい。
・ 磁石３のＮ極及びＳ極の着磁向きは、上がＮ極、下がＳ極であることに限らず、上下逆にしてもよい。 -The shape of the magnet 3 is not necessarily limited to taking a long and thin cube shape, and may be a cylindrical shape, for example.
The magnetization direction of the N pole and the S pole of the magnet 3 is not limited to the N pole on the upper side and the S pole on the lower side, and may be reversed upside down.

・ 磁石３の材料は、例えばフェライト磁石等の種々のものが採用可能である。
・ 発磁面１９の形状は、四角形状に限定されず、例えば円柱磁石を使用した場合に、円形状をとっていてもよい。 As the material of the magnet 3, various materials such as a ferrite magnet can be used.
The shape of the magnetism generating surface 19 is not limited to a quadrangular shape, and may be circular when, for example, a cylindrical magnet is used.

・ 第１距離Ｌ１と第２距離Ｌ２とを同程度に設定するが、これは必ずしも距離が正確に同じ値をとることに限定されず、若干差を含むものとする。要は、バイアス磁界Ｈｂの水平成分２２が多く検出素子８に付与される位置関係を、これら２者がとっていればよい。   The first distance L1 and the second distance L2 are set to be approximately the same, but this is not necessarily limited to the distance having the exact same value, and includes a slight difference. In short, it is only necessary that these two members take a positional relationship in which the horizontal component 22 of the bias magnetic field Hb is applied to the detection element 8 in a large amount.

・ 第２距離Ｌ２は発磁面１９と実装面７ａとの間と距離であるが、これは必ずしも正確に垂直方向Ｚに沿う距離をとることに限定されず、若干傾く状態を含むものとする。
・ 磁気センサ１は、電流センサとして使用されることに限らず、例えば磁石から発生する磁界や、磁性体の距離によるバイアス磁界分布の変化を見ることにより被検出部（磁石や磁性体）の位置を検出する、いわゆる位置検出センサとして使用してもよい。 The second distance L2 is a distance between the magnetism generating surface 19 and the mounting surface 7a, but this is not necessarily limited to taking a distance along the vertical direction Z accurately, and includes a slightly inclined state.
The magnetic sensor 1 is not limited to being used as a current sensor. For example, the position of the detected portion (magnet or magnetic body) can be determined by observing changes in the bias magnetic field distribution depending on the magnetic field generated from the magnet or the distance of the magnetic body. May be used as a so-called position detection sensor.

次に、上記実施形態及び別例から把握できる技術的思想について、それらの効果とともに以下に追記する。
（イ）請求項３又は４において、前記パターン間隔は、２組ある前記検出素子のうち一方の該検出素子の長手方向の真ん中から、他方の該検出素子の長手方向の真ん中までの距離である。この構成によれば、バイアス磁界の水平成分を、より多く検出素子に印加することが可能となる。 Next, technical ideas that can be grasped from the above-described embodiment and other examples will be described below together with their effects.
(A) In claim 3 or 4, the pattern interval is a distance from the center in the longitudinal direction of one of the two detection elements to the center in the longitudinal direction of the other detection element. . According to this configuration, it is possible to apply more horizontal component of the bias magnetic field to the detection element.

１…磁気センサ、２…磁気検出部材としての磁気検出素子チップ、３…磁石、７ａ…実装面、８（８ａ〜８ｄ）…検出素子、１９…発磁面、２０…磁石の端縁、２１…検出素子の真ん中、Ｈｂ…バイアス磁界、Ｗａ…発磁面の幅（発磁面幅）、Ｗｂ…パターン幅、Ｘ…幅直交方向としてのパターン長さ方向、Ｙ…並び方向としてのパターン幅方向、Ｋ１…発磁面の幅直交方向に沿う長さとしての発磁面長さ、Ｋ２…パターン間隔、Ｌ１…端縁から真ん中までの距離としての第１距離、Ｌ２…発磁面から実装面までの距離としての第２距離、Ｚ…垂直方向。   DESCRIPTION OF SYMBOLS 1 ... Magnetic sensor, 2 ... Magnetic detection element chip | tip as a magnetic detection member, 3 ... Magnet, 7a ... Mounting surface, 8 (8a-8d) ... Detection element, 19 ... Magnetization surface, 20 ... Edge of magnet, 21 In the middle of the detection element, Hb: Bias magnetic field, Wa: Magnetization surface width (magnetization surface width), Wb: Pattern width, X: Pattern length direction as width orthogonal direction, Y: Pattern width as alignment direction Direction, K1 ... length of the magnetism surface as a length along the direction perpendicular to the width of the magnetism surface, K2 ... pattern interval, L1 ... first distance as a distance from the edge to the middle, L2 ... mounting from the magnetism surface Second distance as the distance to the surface, Z ... vertical direction.

Claims (4)

くしば状の配置状態をとる少なくとも一対の検出素子を持った磁気検出部材と、前記検出素子にバイアス磁界を印加する磁石とを一体に備え、前記バイアス磁界の変化量を前記検出素子により検出する磁気センサの部品配置構造において、
前記バイアス磁界の発生面である前記磁石の発磁面の幅を、一対の前記検出素子の並び方向の幅であるパターン幅よりも大きく設定し、かつ前記磁石の幅直交方向の端縁から前記検出素子の該幅直交方向の真ん中までの距離と、前記発磁面から前記磁気検出部材の実装面までの垂直方向の距離とを同じに設定したことを特徴とする磁気センサの部品配置構造。 A magnetic detection member having at least a pair of detection elements in a comb-like arrangement state and a magnet for applying a bias magnetic field to the detection elements are integrally provided, and the change amount of the bias magnetic field is detected by the detection elements. In the component arrangement structure of the magnetic sensor,
The width of the magnetism generation surface of the magnet, which is the generation surface of the bias magnetic field, is set to be larger than the pattern width, which is the width in the arrangement direction of the pair of detection elements, and from the edge in the direction perpendicular to the width of the magnet A component arrangement structure of a magnetic sensor , wherein a distance from the magnetism generation surface to a mounting surface of the magnetic detection member is set to be the same as a distance from the magnetism generation surface to the middle of the width orthogonal direction of the detection element. 前記一対の検出素子の組は、２組設けられていることを特徴とする請求項１に記載の磁気センサの部品配置構造。   2. The component arrangement structure of a magnetic sensor according to claim 1, wherein two sets of the pair of detection elements are provided. 前記発磁面の前記幅直交方向に沿う長さを、当該幅直交方向に沿って２組設けた前記検出素子の同方向長さであるパターン間隔よりも小さく設定したことを特徴とする請求項１又は２に記載の磁気センサの部品配置構造。   The length along the width orthogonal direction of the magnetomotive surface is set to be smaller than a pattern interval which is the same direction length of the detection elements provided in two sets along the width orthogonal direction. The component arrangement structure of the magnetic sensor of 1 or 2. 前記一対の検出素子の組は、前記幅直交方向に沿って同一直線上に配置されるとともに、当該幅直交方向において前記磁石を挟んだ両側に配置されていることを特徴とする請求項１〜３のうちいずれか一項に記載の磁気センサの部品配置構造。   The pair of detection elements is arranged on the same straight line along the width orthogonal direction, and is arranged on both sides of the magnet in the width orthogonal direction. The component arrangement structure of the magnetic sensor according to claim 1.
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