JP5468133B2 - 固体撮像装置 - Google Patents
固体撮像装置 Download PDFInfo
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- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
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Description
本発明の実施の形態1に係る固体撮像装置は、複数の画素が2次元状に配列された固体撮像装置であって、半導体基板の第1主面の上方に複数の画素に対応して形成された複数のカラーフィルタを備え、隣り合うカラーフィルタとの間の領域であって半導体基板側の領域に、カラーフィルタより屈折率が低い低屈折率領域が形成され、複数のカラーフィルタのそれぞれは、低屈折率領域の上方で、隣り合うカラーフィルタと接している。
本発明の実施の形態2に係る固体撮像装置は、複数の画素が2次元状に配列された固体撮像装置であって、半導体基板の第1主面(光入射面)の上方に複数の画素に対応して形成された複数のカラーフィルタを備え、隣り合うカラーフィルタの間の領域であって、半導体基板側の領域に、カラーフィルタより屈折率が低い低屈折率領域が形成され、複数のカラーフィルタのそれぞれは、低屈折率領域の上方で、隣り合うカラーフィルタと接している。さらに、低屈折率領域内には、光を遮るための遮光部が形成されている。
11 光電変換部
12 浮遊拡散層
13 転送トランジスタ
14 増幅トランジスタ
15 リセットトランジスタ
16 選択トランジスタ
17 撮像領域
18 垂直シフトレジスタ
19 水平シフトレジスタ
20 出力信号線
21 出力端
100、200 画素部
101 シリコン層
102、310 支持基板
111、301 フォトダイオード
112 トランジスタ
112a 拡散領域
112b STI分離領域
112c ゲート電極
113、119、228 絶縁膜
114 多層配線
115、117 シリコン酸化膜
116 シリコン窒化膜
118 金属膜
120、220、319 分離領域
121 凸部
121a、230 シリコン凸部
122a、122b、122c、309 カラーフィルタ
123 平坦化膜
124 レンズ
125、229 シリコン膜
126 孔
221 低屈折率領域
221a 空洞
227 遮光部
305 層間絶縁膜
306 配線
308 接着剤層
315 中空部
317 キャップ層
Claims (10)
- 複数の画素が2次元状に配列された固体撮像装置であって、
半導体基板と、
前記半導体基板内に前記複数の画素に対応して形成された、入射した光を光電変換することで信号電荷を生成する複数の光電変換部と、
前記半導体基板の上方に前記複数の画素に対応して形成された複数のカラーフィルタとを備え、
隣り合う前記カラーフィルタとの間の領域であって前記半導体基板側の領域に、前記カラーフィルタより屈折率が低い低屈折率領域が形成され、
前記低屈折率領域の内部には、光を遮るための金属からなる第1遮光部が形成され、
前記複数のカラーフィルタのそれぞれは、
前記低屈折率領域の上方で、隣り合う前記カラーフィルタと接しており、
前記低屈折率領域の底面、前記第1遮光部の底面及び前記複数のカラーフィルタの底面は、同一面上に形成されている
固体撮像装置。 - 前記低屈折率領域は、空洞、又は、前記カラーフィルタより屈折率が低い材料を含む領域である
請求項1記載の固体撮像装置。 - 前記低屈折率領域は、前記カラーフィルタより屈折率が低いシリコン酸化物を含む
請求項2記載の固体撮像装置。 - 前記第1遮光部は、タングステン、アルミニウム、銅、及び、チタンの少なくとも1つを含む
請求項1〜3のいずれか1項に記載の固体撮像装置。 - 前記固体撮像装置は、さらに、前記複数の光電変換部間に形成され、前記複数の光電変換部とは異なる導電型の複数の不純物領域を含む分離部を備え、
前記低屈折率領域の前記半導体基板側の面の幅は、前記分離部の前記カラーフィルタ側の面の幅より短い
請求項1〜4のいずれか1項に記載の固体撮像装置。 - 前記固体撮像装置は、さらに、前記低屈折率領域と前記半導体基板との間に形成された、光を遮る第2遮光部を備える
請求項1〜5のいずれか1項に記載の固体撮像装置。 - 前記固体撮像装置は、さらに、前記低屈折率領域と前記半導体基板との間に形成された、前記カラーフィルタより屈折率が高い高屈折率膜を備える
請求項1〜6のいずれか1項に記載の固体撮像装置。 - 前記高屈折率膜は、チタン酸化物、シリコン窒化物、及び、タンタル酸化物の少なくとも1つを含む
請求項7記載の固体撮像装置。 - 前記固体撮像装置は、さらに、前記複数のカラーフィルタの上方に前記複数の画素に対応して形成された複数のレンズを備える
請求項1〜8のいずれか1項に記載の固体撮像装置。 - 前記固体撮像装置は、さらに、前記半導体基板の下方に形成された、前記複数の光電変換部によって生成された信号電荷を検出する検出回路部を備える
請求項1〜9のいずれか1項に記載の固体撮像装置。
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JP2012514683A JP5468133B2 (ja) | 2010-05-14 | 2011-02-17 | 固体撮像装置 |
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JP2012514683A JP5468133B2 (ja) | 2010-05-14 | 2011-02-17 | 固体撮像装置 |
PCT/JP2011/000873 WO2011142065A1 (ja) | 2010-05-14 | 2011-02-17 | 固体撮像装置及びその製造方法 |
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JP (1) | JP5468133B2 (ja) |
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