JP5461836B2 - 低抵抗薄膜有機太陽電池電極 - Google Patents
低抵抗薄膜有機太陽電池電極 Download PDFInfo
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- JP5461836B2 JP5461836B2 JP2008526970A JP2008526970A JP5461836B2 JP 5461836 B2 JP5461836 B2 JP 5461836B2 JP 2008526970 A JP2008526970 A JP 2008526970A JP 2008526970 A JP2008526970 A JP 2008526970A JP 5461836 B2 JP5461836 B2 JP 5461836B2
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- 239000010409 thin film Substances 0.000 title 1
- 239000004020 conductor Substances 0.000 claims description 52
- 238000000034 method Methods 0.000 claims description 36
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 29
- 239000011368 organic material Substances 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 11
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- 229920000642 polymer Polymers 0.000 claims description 9
- 238000000576 coating method Methods 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims description 3
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- 239000000463 material Substances 0.000 description 73
- 239000010410 layer Substances 0.000 description 72
- 239000000370 acceptor Substances 0.000 description 40
- 210000004027 cell Anatomy 0.000 description 18
- 230000005693 optoelectronics Effects 0.000 description 16
- 230000006798 recombination Effects 0.000 description 15
- 238000005215 recombination Methods 0.000 description 15
- 150000003384 small molecules Chemical class 0.000 description 13
- 230000005670 electromagnetic radiation Effects 0.000 description 11
- 239000012044 organic layer Substances 0.000 description 10
- 238000012546 transfer Methods 0.000 description 9
- 238000013086 organic photovoltaic Methods 0.000 description 8
- 238000004768 lowest unoccupied molecular orbital Methods 0.000 description 7
- 230000032258 transport Effects 0.000 description 7
- 238000004770 highest occupied molecular orbital Methods 0.000 description 6
- 238000000926 separation method Methods 0.000 description 6
- 230000000903 blocking effect Effects 0.000 description 5
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- 238000005191 phase separation Methods 0.000 description 3
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- 238000013461 design Methods 0.000 description 2
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- 230000005284 excitation Effects 0.000 description 2
- 238000003306 harvesting Methods 0.000 description 2
- 125000001183 hydrocarbyl group Chemical group 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 239000003446 ligand Substances 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
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- 150000002902 organometallic compounds Chemical class 0.000 description 2
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- 238000010129 solution processing Methods 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 235000004522 Pentaglottis sempervirens Nutrition 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 210000002457 barrier cell Anatomy 0.000 description 1
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- 230000008859 change Effects 0.000 description 1
- 150000005829 chemical entities Chemical class 0.000 description 1
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- 230000032798 delamination Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- -1 properties Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/80—Constructional details
- H10K30/81—Electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
- H10K30/20—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising organic-organic junctions, e.g. donor-acceptor junctions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K39/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic radiation-sensitive element covered by group H10K30/00
- H10K39/10—Organic photovoltaic [PV] modules; Arrays of single organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
- Electroluminescent Light Sources (AREA)
Description
本発明は、米国空軍科学調査室によって与えられた契約第339-6002号および米国エネルギー省国立再生可能エネルギー研究所によって与えられた契約第341-4141号の下での米国政府支援で行われた。政府は、この発明に特定の権利を有する。
特許が請求された発明は、大学-企業共同研究協定の以下のパーティ、すなわちプリンストン大学、南カリフォルニア大学、および国際光エネルギー株式会社の1つまたは複数によって、これらのために、および/またはこれらの共同で行われた。この協定は、特許請求された発明が成された日以前に有効であり、特許が請求される発明は、この協定の範囲内で行われた活動の結果として成された。
120 陽極
122 陽極平坦化層
150、150'、350 光活性領域
152 ドナー(層)
153 混合層
154 アクセプタ(層)
156、156' 励起子ブロッキング層
170 陰極
252、254 バルク層
300 有機感光性光電子デバイス
320 透明コンタクト
358 有機光伝導性材料
370 ショットキコンタクト
460 介在伝導領域
920 第1の導電材料
924 第2の導電材料(内曲構造)
930 マスク層
932 開口
950 有機層
970 第3の伝導性材料
975 ギャップ
Claims (13)
- 透明基板上に配置された、第1の導電材料を含む透明膜を設ける段階と、
マスクの開口が、前記基板に近づくにつれて狭くなる傾斜側面を有するように、前記第1の導電材料の上に前記マスクを堆積させパターン形成する段階と、
前記マスクの前記開口中に露出された前記第1の導電材料の直ぐ上に第2の導電材料を堆積させ、前記開口を少なくとも部分的に満たす段階と、
前記マスクを取り除き、前記堆積によって前記マスクの前記開口中に形成された前記第2の導電材料の内曲構造を残す段階と、
前記取り除きの後で、前記内曲構造の間の前記第1の導電材料の上に第1の有機材料を堆積させる段階と、
前記内曲構造の間に堆積された前記第1の有機材料の上に第3の導電材料を堆積させる段階であって、前記内曲構造の上縁部は、前記第3の導電材料が前記第1および第2の導電材料に直接接触しないように堆積を位置合わせする段階と、を含む方法。 - 前記第2の導電材料は、前記第1の導電材料よりも高導電性である、請求項1に記載の方法。
- 前記第1の導電材料は、酸化物または重合体である、請求項1に記載の方法。
- 前記酸化物は、縮退半導体酸化物である、請求項3に記載の方法。
- 前記第2の導電材料は、金属である、請求項3に記載の方法。
- 前記透明膜の前記第1の導電材料は、金属の透明なコーティングである、請求項1に記載の方法。
- 前記第2の導電材料は、金属である、請求項1に記載の方法。
- 前記内曲構造の間に堆積された前記第3の導電材料を電気的に相互接続する段階をさらに含む、請求項1に記載の方法。
- 前記第1の有機材料の上に第2の有機材料を堆積させる段階をさらに含み、前記第1および第2の有機材料は、平面、バルク、または混成のドナー-アクセプタヘテロ接合を形成する、請求項1に記載の方法。
- 前記第1の有機材料と共に第2の有機材料を堆積させる段階をさらに含み、前記第1および第2の有機材料は、混合、バルク、または混成のドナー-アクセプタヘテロ接合を形成する、請求項1に記載の方法。
- 前記第1の導電材料は、金属であり、前記透明膜および前記第1の有機材料は、ショットキ障壁ヘテロ接合を形成する、請求項1に記載の方法。
- 前記第3の導電材料は、金属であり、前記第3の導電材料および前記第1の有機材料は、ショットキ障壁ヘテロ接合を形成する、請求項1に記載の方法。
- 前記透明膜は、前記透明基板と物理的に接触したシートである、請求項1に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/205,122 | 2005-08-17 | ||
US11/205,122 US7314773B2 (en) | 2005-08-17 | 2005-08-17 | Low resistance thin film organic solar cell electrodes |
PCT/US2006/030258 WO2008005027A2 (en) | 2005-08-17 | 2006-08-02 | Low resistance thin film organic solar cell electrodes |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009505422A JP2009505422A (ja) | 2009-02-05 |
JP5461836B2 true JP5461836B2 (ja) | 2014-04-02 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008526970A Expired - Fee Related JP5461836B2 (ja) | 2005-08-17 | 2006-08-02 | 低抵抗薄膜有機太陽電池電極 |
Country Status (10)
Country | Link |
---|---|
US (2) | US7314773B2 (ja) |
EP (1) | EP1920480B1 (ja) |
JP (1) | JP5461836B2 (ja) |
KR (1) | KR101332490B1 (ja) |
CN (1) | CN101390229B (ja) |
AR (1) | AR055122A1 (ja) |
DE (1) | DE602006007594D1 (ja) |
HK (1) | HK1116925A1 (ja) |
TW (1) | TWI330892B (ja) |
WO (1) | WO2008005027A2 (ja) |
Families Citing this family (21)
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ATE416480T1 (de) * | 2005-06-16 | 2008-12-15 | Asulab Sa | Herstellungsverfahren für ein transparentes element mit transparenten elektroden und entsprechendes element |
US7314773B2 (en) * | 2005-08-17 | 2008-01-01 | The Trustees Of Princeton University | Low resistance thin film organic solar cell electrodes |
US20090229667A1 (en) * | 2008-03-14 | 2009-09-17 | Solarmer Energy, Inc. | Translucent solar cell |
KR100953448B1 (ko) | 2008-04-02 | 2010-04-20 | 한국기계연구원 | 반도체 나노소재를 이용한 광전 변환 장치 및 그 제조 방법 |
JP2010041022A (ja) * | 2008-07-08 | 2010-02-18 | Sumitomo Chemical Co Ltd | 光電変換素子 |
US20100018581A1 (en) * | 2008-07-24 | 2010-01-28 | Solarmer Energy, Inc. | Large area solar cell |
US8367798B2 (en) * | 2008-09-29 | 2013-02-05 | The Regents Of The University Of California | Active materials for photoelectric devices and devices that use the materials |
FR2939239B1 (fr) | 2008-12-03 | 2010-12-31 | Ecole Polytech | Module photovoltaique comprenant une electrode transparente conductrice d'epaisseur variable et procedes de fabrication d'un tel module |
US20100276071A1 (en) * | 2009-04-29 | 2010-11-04 | Solarmer Energy, Inc. | Tandem solar cell |
US20100279458A1 (en) * | 2009-04-29 | 2010-11-04 | Du Pont Apollo Ltd. | Process for making partially transparent photovoltaic modules |
US20100276731A1 (en) * | 2009-05-04 | 2010-11-04 | Brookhaven Science Associates, Llc. | Inorganic Nanocrystal Bulk Heterojunctions |
KR101570535B1 (ko) * | 2009-05-12 | 2015-11-20 | 엘지디스플레이 주식회사 | 유기발광다이오드 표시장치의 제조방법 |
KR101068646B1 (ko) | 2009-05-20 | 2011-09-28 | 한국기계연구원 | 쇼트키 접합 태양 전지 및 이의 제조 방법 |
US20100294352A1 (en) * | 2009-05-20 | 2010-11-25 | Uma Srinivasan | Metal patterning for electrically conductive structures based on alloy formation |
KR101028971B1 (ko) * | 2009-05-26 | 2011-04-19 | 한국과학기술원 | 집적형 박막 태양전지 및 그의 제조 방법 |
US8440496B2 (en) * | 2009-07-08 | 2013-05-14 | Solarmer Energy, Inc. | Solar cell with conductive material embedded substrate |
US8372945B2 (en) | 2009-07-24 | 2013-02-12 | Solarmer Energy, Inc. | Conjugated polymers with carbonyl substituted thieno[3,4-B]thiophene units for polymer solar cell active layer materials |
KR101094300B1 (ko) * | 2009-10-12 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 유기 발광 조명 장치 및 그 제조 방법 |
US8399889B2 (en) | 2009-11-09 | 2013-03-19 | Solarmer Energy, Inc. | Organic light emitting diode and organic solar cell stack |
US10446772B2 (en) | 2013-06-14 | 2019-10-15 | Lg Chem, Ltd. | Organic solar cell and method of manufacturing the same |
US20170179198A1 (en) * | 2014-01-31 | 2017-06-22 | Champ Great Int'l Corporation | Tandem organic photovoltaic devices that include a metallic nanostructure recombination layer |
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US7314773B2 (en) * | 2005-08-17 | 2008-01-01 | The Trustees Of Princeton University | Low resistance thin film organic solar cell electrodes |
-
2005
- 2005-08-17 US US11/205,122 patent/US7314773B2/en active Active
-
2006
- 2006-08-02 JP JP2008526970A patent/JP5461836B2/ja not_active Expired - Fee Related
- 2006-08-02 WO PCT/US2006/030258 patent/WO2008005027A2/en active Application Filing
- 2006-08-02 DE DE602006007594T patent/DE602006007594D1/de active Active
- 2006-08-02 KR KR1020087006295A patent/KR101332490B1/ko not_active IP Right Cessation
- 2006-08-02 EP EP06851424A patent/EP1920480B1/en not_active Expired - Fee Related
- 2006-08-02 CN CN2006800377393A patent/CN101390229B/zh not_active Expired - Fee Related
- 2006-08-16 TW TW095130117A patent/TWI330892B/zh not_active IP Right Cessation
- 2006-08-16 AR ARP060103580A patent/AR055122A1/es not_active Application Discontinuation
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2007
- 2007-12-27 US US12/005,773 patent/US20080131993A1/en not_active Abandoned
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2008
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Publication number | Publication date |
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WO2008005027A2 (en) | 2008-01-10 |
US20080131993A1 (en) | 2008-06-05 |
US20070178619A1 (en) | 2007-08-02 |
AR055122A1 (es) | 2007-08-08 |
TWI330892B (en) | 2010-09-21 |
WO2008005027A3 (en) | 2008-05-29 |
US7314773B2 (en) | 2008-01-01 |
TW200735385A (en) | 2007-09-16 |
CN101390229B (zh) | 2010-08-25 |
KR20080044295A (ko) | 2008-05-20 |
EP1920480B1 (en) | 2009-07-01 |
JP2009505422A (ja) | 2009-02-05 |
HK1116925A1 (en) | 2009-01-02 |
EP1920480A2 (en) | 2008-05-14 |
DE602006007594D1 (de) | 2009-08-13 |
KR101332490B1 (ko) | 2013-11-26 |
CN101390229A (zh) | 2009-03-18 |
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