JP5458693B2 - 終点検出装置 - Google Patents
終点検出装置 Download PDFInfo
- Publication number
- JP5458693B2 JP5458693B2 JP2009152547A JP2009152547A JP5458693B2 JP 5458693 B2 JP5458693 B2 JP 5458693B2 JP 2009152547 A JP2009152547 A JP 2009152547A JP 2009152547 A JP2009152547 A JP 2009152547A JP 5458693 B2 JP5458693 B2 JP 5458693B2
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- JP
- Japan
- Prior art keywords
- end point
- emission spectrum
- etched
- etching
- plasma emission
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000001514 detection method Methods 0.000 title claims description 23
- 238000000295 emission spectrum Methods 0.000 claims description 49
- 238000005530 etching Methods 0.000 claims description 38
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 239000000463 material Substances 0.000 claims description 33
- 239000007789 gas Substances 0.000 claims description 24
- 235000012239 silicon dioxide Nutrition 0.000 claims description 21
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 19
- 239000011737 fluorine Substances 0.000 claims description 19
- 229910052731 fluorine Inorganic materials 0.000 claims description 19
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- 239000001301 oxygen Substances 0.000 claims description 8
- 229910052760 oxygen Inorganic materials 0.000 claims description 8
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 6
- 239000011651 chromium Substances 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 239000010937 tungsten Substances 0.000 claims description 3
- 238000005070 sampling Methods 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 description 19
- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 16
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 16
- 239000007795 chemical reaction product Substances 0.000 description 10
- 238000000034 method Methods 0.000 description 9
- 239000010453 quartz Substances 0.000 description 9
- QVGXLLKOCUKJST-IGMARMGPSA-N oxygen-16 atom Chemical compound [16O] QVGXLLKOCUKJST-IGMARMGPSA-N 0.000 description 5
- 230000007423 decrease Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000000903 blocking effect Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 238000009412 basement excavation Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
Description
Claims (1)
- 二酸化珪素上に積層されたモリブデン、クロム、タンタル、タングステン、シリコンの
いずれかによる被エッチング材料をフッ素ガスでエッチングして前記被エッチング材料の終点を検出する終点検出装置において、
(1) フッ素ガスと同様の波長を有するレーザをレーザ光発生装置から発生させ、前記フッ素ガスによる742〜748nmの波長帯のプラズマ発光スペクトル強度を取得し、
(2) 前記被エッチング材料を前記エッチングすることで前記二酸化珪素から発生するフッ化珪素及び酸素による776nm〜778nmの波長帯のプラズマ発光スペクトル強度を取得し、
(3) 前記フッ素ガスの波長帯の前記プラズマ発光スペクトル強度を前記フッ化珪素及び前記酸素の波長帯の前記プラズマ発光スペクトル強度で除算した演算データを用いて前記被エッチング材料の終点検出を行う、
制御装置と、
を備え、
前記終点検出は、前記演算データの大きさがサンプリング時間として1秒間に0.5%以上減少することが3回連続で繰り返された時点を終点とすることを特徴とする終点検出装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009152547A JP5458693B2 (ja) | 2009-06-26 | 2009-06-26 | 終点検出装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009152547A JP5458693B2 (ja) | 2009-06-26 | 2009-06-26 | 終点検出装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011009546A JP2011009546A (ja) | 2011-01-13 |
JP5458693B2 true JP5458693B2 (ja) | 2014-04-02 |
Family
ID=43565847
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009152547A Active JP5458693B2 (ja) | 2009-06-26 | 2009-06-26 | 終点検出装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5458693B2 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6239294B2 (ja) | 2013-07-18 | 2017-11-29 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置及びプラズマ処理装置の運転方法 |
JP6560909B2 (ja) | 2015-01-19 | 2019-08-14 | 株式会社日立ハイテクノロジーズ | プラズマ処理方法およびプラズマ処理装置 |
US9865439B2 (en) | 2015-01-19 | 2018-01-09 | Hitachi High-Technologies Corporation | Plasma processing apparatus |
WO2021130798A1 (ja) * | 2019-12-23 | 2021-07-01 | 株式会社日立ハイテク | プラズマ処理方法およびプラズマ処理に用いる波長選択方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961036A (ja) * | 1982-09-29 | 1984-04-07 | Fujitsu Ltd | プラズマエツチング終点検出方法 |
JPH01111335A (ja) * | 1987-10-26 | 1989-04-28 | Nippon Telegr & Teleph Corp <Ntt> | ドライエツチングの終点検出方法および装置 |
JPH02285633A (ja) * | 1989-04-27 | 1990-11-22 | Toshiba Corp | エッチング処理方法 |
JPH102859A (ja) * | 1996-06-19 | 1998-01-06 | Matsushita Electric Ind Co Ltd | プラズマモニタリング方法 |
JP2003028801A (ja) * | 2001-07-13 | 2003-01-29 | Matsushita Electric Ind Co Ltd | モニタリング方法 |
JP2007193036A (ja) * | 2006-01-18 | 2007-08-02 | Fujitsu Ltd | フォトマスクの製造方法 |
-
2009
- 2009-06-26 JP JP2009152547A patent/JP5458693B2/ja active Active
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