JP5443676B2 - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
- Publication number
- JP5443676B2 JP5443676B2 JP2007213000A JP2007213000A JP5443676B2 JP 5443676 B2 JP5443676 B2 JP 5443676B2 JP 2007213000 A JP2007213000 A JP 2007213000A JP 2007213000 A JP2007213000 A JP 2007213000A JP 5443676 B2 JP5443676 B2 JP 5443676B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- epitaxial semiconductor
- bit line
- semiconductor layers
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 199
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000000758 substrate Substances 0.000 claims description 58
- 238000005498 polishing Methods 0.000 claims description 23
- 238000003860 storage Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 19
- 238000002513 implantation Methods 0.000 claims description 8
- 150000002500 ions Chemical class 0.000 claims description 7
- 239000010410 layer Substances 0.000 description 243
- 230000015654 memory Effects 0.000 description 51
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 16
- 229920000642 polymer Polymers 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 239000011229 interlayer Substances 0.000 description 8
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 5
- 229910021332 silicide Inorganic materials 0.000 description 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- -1 Silicon Oxide Nitride Chemical class 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Chemical group 0.000 description 1
- 239000010949 copper Chemical group 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Description
12 溝
14 ビットライン
15 エピタキシャル半導体層
18 ポケット注入領域
20 ONO膜
21 トンネル酸化膜
22 トラップ層
23 トップ酸化膜
28 ワードライン
54 下部マスク層
56 研磨ストッパ層
58 マスク層
Claims (8)
- 半導体基板上に設けられた2つのエピタキシャル半導体層と、
前記2つのエピタキシャル半導体層内の上部にそれぞれ設けられたビットラインと、
前記2つのエピタキシャル半導体層間の前記半導体基板上に設けられた電荷蓄積層と、を具備し、
前記2つのエピタキシャル半導体層は、前記2つのエピタキシャル半導体層間となるべき領域に設けられたマスク層をマスクとして形成されており、
前記マスク層は、下部マスク層と研磨ストッパ層を具備し、
前記ビットラインは、前記下部マスク層が残存するように前記研磨ストッパ層を除去した状態で形成されており、
前記電荷蓄積層は、前記下部マスク層の除去後に、前記2つのエピタキシャル半導体層間の前記半導体基板に設けられた溝の内面に沿って設けられており、
前記電荷蓄積層は、トンネル酸化膜、トラップ層、およびトップ酸化膜を含み、
前記トップ酸化膜は、前記ビットラインを覆うように設けられている
ことを特徴とする半導体装置。 - 前記2つのエピタキシャル半導体層はそれぞれ全てがビットラインであることを特徴とする請求項1記載の半導体装置。
- 前記電荷蓄積層は、前記2つのエピタキシャル半導体層の側方にも設けられていることを特徴とする請求項1記載の半導体装置。
- 前記ビットラインに接して設けられたポケット注入領域を具備することを特徴とする請求項1記載の半導体装置。
- 2つのエピタキシャル半導体層間となるべき領域に、下部マスク層と研磨ストッパ層とを形成する工程と、
前記下部マスク層と前記研磨ストッパ層をマスクとして、半導体基板上に2つのエピタキシャル半導体層を形成する工程と、
前記2つのエピタキシャル半導体層を、前記研磨ストッパ層まで研磨する工程と、
前記下部マスク層が残存するように前記研磨ストッパ層を除去する工程と、
前記2つのエピタキシャル半導体層内の上部にそれぞれビットラインを形成する工程と、
前記下部マスク層を除去する工程と、
前記2つのエピタキシャル半導体層間の前記半導体基板に溝を設ける工程と、
前記2つのエピタキシャル半導体層間となるべき領域の前記半導体基板上に前記溝の内面に沿って電荷蓄積層を形成する工程と、を有する、
ことを特徴とする半導体装置の製造方法。 - 前記ビットラインを形成する工程は、前記下部マスク層が残存した状態で斜めからイオンを注入することにより前記ビットラインを形成する工程であることを特徴とする請求項5記載の半導体装置の製造方法。
- 前記2つのエピタキシャル半導体層間となるべき領域の前記半導体基板にポケット注入する工程を有する請求項5記載の半導体装置の製造方法。
- 前記ポケット注入する工程は、前記2つのエピタキシャル半導体層間となるべき領域の前記溝に隣接する前記半導体基板内にポケット注入する工程であることを特徴とする請求項7記載の半導体装置の製造方法。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007213000A JP5443676B2 (ja) | 2007-08-17 | 2007-08-17 | 半導体装置及びその製造方法 |
US12/192,945 US7825448B2 (en) | 2007-08-17 | 2008-08-15 | U-shaped SONOS memory having an elevated source and drain |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007213000A JP5443676B2 (ja) | 2007-08-17 | 2007-08-17 | 半導体装置及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009049137A JP2009049137A (ja) | 2009-03-05 |
JP5443676B2 true JP5443676B2 (ja) | 2014-03-19 |
Family
ID=40501100
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007213000A Active JP5443676B2 (ja) | 2007-08-17 | 2007-08-17 | 半導体装置及びその製造方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US7825448B2 (ja) |
JP (1) | JP5443676B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102156624B1 (ko) * | 2017-10-25 | 2020-09-16 | 한국과학기술원 | 트랩 층이 형성된 반도체 채널 기반의 뉴로모픽 시냅스 소자 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60152058A (ja) * | 1984-01-20 | 1985-08-10 | Toshiba Corp | 半導体記憶装置 |
US4833094A (en) * | 1986-10-17 | 1989-05-23 | International Business Machines Corporation | Method of making a dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes |
US5181089A (en) * | 1989-08-15 | 1993-01-19 | Matsushita Electric Industrial Co., Ltd. | Semiconductor memory device and a method for producing the same |
JPH03219677A (ja) * | 1990-01-24 | 1991-09-27 | Fujitsu Ltd | 半導体装置 |
JP2964619B2 (ja) * | 1990-10-31 | 1999-10-18 | 日本電気株式会社 | 半導体記憶装置およびその製造方法 |
JP2000294660A (ja) * | 1999-04-06 | 2000-10-20 | Sony Corp | 不揮発性半導体記憶装置およびその駆動方法 |
US6204529B1 (en) * | 1999-08-27 | 2001-03-20 | Hsing Lan Lung | 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate |
JP4602584B2 (ja) * | 2001-03-28 | 2010-12-22 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP2002343963A (ja) * | 2001-05-17 | 2002-11-29 | Sony Corp | 溝ゲート型電界効果トランジスタ及びその製造方法 |
-
2007
- 2007-08-17 JP JP2007213000A patent/JP5443676B2/ja active Active
-
2008
- 2008-08-15 US US12/192,945 patent/US7825448B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US7825448B2 (en) | 2010-11-02 |
JP2009049137A (ja) | 2009-03-05 |
US20090200599A1 (en) | 2009-08-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5191633B2 (ja) | 半導体装置およびその製造方法 | |
JP5116294B2 (ja) | 半導体構造およびその製造方法(垂直soiトレンチsonosセル) | |
US20070018207A1 (en) | Split gate storage device including a horizontal first gate and a vertical second gate in a trench | |
US9276206B2 (en) | Scalable and reliable non-volatile memory cell | |
JP2012227326A (ja) | 不揮発性半導体記憶装置とその製造方法 | |
TWI731066B (zh) | 半導體裝置之製造方法 | |
JP2010182751A (ja) | 不揮発性半導体記憶装置及びその製造方法 | |
KR100766233B1 (ko) | 플래쉬 메모리 소자 및 그의 제조 방법 | |
US11302791B2 (en) | Semiconductor device including a fin-type transistor and method of manufacturing the same | |
US20220335984A1 (en) | Semiconductor device structure | |
JP4250616B2 (ja) | 半導体集積回路装置及びその製造方法 | |
JP2008166442A (ja) | 半導体装置およびその製造方法 | |
US8014203B2 (en) | Memory device and methods for fabricating and operating the same | |
KR20080076074A (ko) | 비휘발성 메모리 소자 및 그 제조 방법 | |
US9806087B2 (en) | Low cost high performance EEPROM device | |
US8669606B2 (en) | Semiconductor device and method for manufacturing thereof | |
JP5443676B2 (ja) | 半導体装置及びその製造方法 | |
JPWO2007000808A1 (ja) | 半導体装置およびその製造方法 | |
JPWO2006035503A1 (ja) | 半導体装置および半導体装置の製造方法 | |
JP2014116342A (ja) | 半導体装置の製造方法 | |
JP5301123B2 (ja) | 半導体装置及びその製造方法 | |
US8273627B2 (en) | Semiconductor device and method for manufacturing thereof | |
US20240153540A1 (en) | Semiconductor device structure | |
JP4927716B2 (ja) | 半導体装置 | |
US20110180864A1 (en) | Memory device and method for fabricating the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20100327 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100812 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20100812 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20120829 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121115 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20121122 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130214 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130509 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130808 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20131028 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131121 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20131206 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131220 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5443676 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313111 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |