JP5432041B2

JP5432041B2 - Vapor growth equipment

Info

Publication number: JP5432041B2
Application number: JP2010090176A
Authority: JP
Inventors: 晃山口
Original assignee: Taiyo Nippon Sanso Corp
Current assignee: Taiyo Nippon Sanso Corp
Priority date: 2010-04-09
Filing date: 2010-04-09
Publication date: 2014-03-05
Anticipated expiration: 2030-04-09
Also published as: JP2011222739A

Description

本発明は、気相成長装置に関し、詳しくは、サセプタを介して加熱された基板上に薄膜を気相成長させる気相成長装置に関する。 The present invention relates to a vapor phase growth apparatus, and more particularly, to a vapor phase growth apparatus for vapor phase growing a thin film on a substrate heated via a susceptor.

青色発光ダイオード、緑色発光ダイオード及び紫外レーザーダイオードの材料となる窒化ガリウム（ＧａＮ）系半導体デバイスに用いられる化合物半導体等の薄膜を製造するための気相成長装置では、有機金属及びアンモニアを原料として水素又は窒素をキャリアガスとした原料ガスを加熱した基板上に供給し、基板面にＧａＮ系薄膜を気相成長させている。 In a vapor phase growth apparatus for manufacturing thin films such as compound semiconductors used for gallium nitride (GaN) semiconductor devices, which are materials for blue light emitting diodes, green light emitting diodes, and ultraviolet laser diodes, hydrogen is produced using organic metals and ammonia as raw materials. Alternatively, a source gas using nitrogen as a carrier gas is supplied onto a heated substrate, and a GaN-based thin film is vapor-phase grown on the substrate surface.

このような気相成長装置として、基板面における原料ガスの状態等の処理条件を均一にするため、基板を公転させながら自転させる自公転型の気相成長装置が知られている。さらに、ＧａＮ系薄膜は成膜温度によって大きな影響を受けるため、複数の基板を同時に処理する場合に、基板とサセプタとの間に調整板を介在させたり、サセプタを上下に分割して分割面に高さ調整用のスペーサリングを配置し、調整板やスペーサリングの厚さを調節することによって複数の基板温度の均一化を図ることが行われている（例えば、特許文献１参照。）。 As such a vapor phase growth apparatus, a self-revolution type vapor phase growth apparatus that rotates while rotating the substrate is known in order to make the processing conditions such as the state of the source gas on the substrate surface uniform. Furthermore, since GaN-based thin films are greatly affected by the deposition temperature, when processing multiple substrates at the same time, an adjustment plate is interposed between the substrate and the susceptor, or the susceptor is divided into upper and lower surfaces to form divided surfaces. A plurality of substrate temperatures are made uniform by disposing a height adjusting spacer ring and adjusting the thickness of the adjusting plate and the spacer ring (see, for example, Patent Document 1).

特開２００９−１８８２８９号公報JP 2009-188289 A

しかし、調整板やスペーサリングは、これらの厚さが１ｍｍ程度で極めて薄いため、これらの製作に手間がかかるだけでなく、これらをサセプタに装着したり、取り外したりする際の取り扱いにも注意が必要だった。 However, since the adjustment plates and spacer rings are very thin with a thickness of about 1 mm, they are not only troublesome to manufacture, but also when handling them when attaching or removing them from the susceptor. It was necessary.

そこで本発明は、簡単な構造で基板温度を容易に調整することができる気相成長装置を提供することを目的としている。 Therefore, an object of the present invention is to provide a vapor phase growth apparatus that can easily adjust the substrate temperature with a simple structure.

上記目的を達成するため、本発明の気相成長装置は、チャンバー内に回転可能に設けられた円盤状のサセプタと、該サセプタの上面に設けられた基板載置部と、前記チャンバー内に原料ガスを導入する原料ガス導入部と、前記チャンバーの反原料ガス導入部側に設けられた排気部と、前記基板載置部に載置された基板を前記サセプタの下面側から加熱する加熱手段とを備え、前記サセプタの回転に伴って前記基板を回転させるとともに、前記原料ガス導入部から原料ガスを導入して前記加熱手段により加熱された基板の上面に薄膜を気相成長させる気相成長装置において、前記サセプタは、前記基板載置部を有する上部サセプタ部材と、前記加熱手段によって加熱される下部サセプタ部材と、前記上部サセプタ部材の下面と前記下部サセプタ部材の上面との間に形成される空間部の寸法を調節して下部サセプタ部材から上部サセプタ部材への伝熱量を調節する伝熱量調整部とを備え、前記サセプタの伝熱量調整部は、前記基板載置部の外周側の上部サセプタ部材の外周部下面と、該上部サセプタ部材の下面に対向する前記下部サセプタ部材の外周部上面とのいずれか一方の面に、他方の面に向かう突出寸法が異なる階段状当接面を有する階段部を周方向に複数形成するとともに、他方の面には、前記複数の階段部における突出寸法が同一の各階段状当接面に当接する複数の突出面を形成し、前記階段状当接面のいずれか一つの当接面と前記突出面とを当接させた際の階段状当接面の突出寸法によって前記上部サセプタ部材の下面と前記下部サセプタ部材の上面との間隔が調節可能となっていることを特徴としている。 In order to achieve the above object, a vapor phase growth apparatus according to the present invention comprises a disc-shaped susceptor rotatably provided in a chamber, a substrate mounting portion provided on the upper surface of the susceptor, and a raw material in the chamber. A source gas introduction part for introducing a gas; an exhaust part provided on the side opposite to the source gas introduction part of the chamber; and a heating means for heating the substrate placed on the substrate placement part from the lower surface side of the susceptor. A vapor phase growth apparatus that rotates the substrate with the rotation of the susceptor, and introduces a source gas from the source gas introduction unit and vapor-deposits a thin film on the upper surface of the substrate heated by the heating means The susceptor includes an upper susceptor member having the substrate mounting portion, a lower susceptor member heated by the heating means, a lower surface of the upper susceptor member, and the lower susceptor. And a heat transmission controller unit for adjusting the amount of heat transfer from the lower susceptor member to the upper susceptor member dimensions of the space which is formed by adjusting between the upper surface of the wood, heat transmission controller portion of the susceptor, the Projection dimension toward the other surface on one surface of the outer peripheral surface of the upper susceptor member on the outer peripheral side of the substrate mounting portion and the upper surface of the outer periphery of the lower susceptor member facing the lower surface of the upper susceptor member A plurality of stepped portions having different stepped contact surfaces are formed in the circumferential direction, and the other surface has a plurality of protruded surfaces that contact each stepped contact surface having the same protruding dimension at the plurality of stepped portions. The lower surface of the upper susceptor member and the lower susceptor member are formed according to the protruding dimension of the stepped contact surface when the contact surface of any one of the stepped contact surfaces and the protruding surface are contacted The distance from the top surface of the It is characterized in that you are me.

また、本発明の気相成長装置は、前記サセプタが、チャンバー内に回転可能に設けられた円盤状のサセプタ支持部材の外周部の周方向に複数個が等間隔で回転可能に設けられ、前記サセプタ支持部材の回転に伴い、サセプタ支持部材の中心軸を中心として公転するとともに、サセプタ中心軸を中心として自転することを特徴としている。 Further, in the vapor phase growth apparatus of the present invention, a plurality of the susceptors are rotatably provided at equal intervals in the circumferential direction of the outer peripheral portion of a disc-shaped susceptor support member rotatably provided in the chamber. As the susceptor support member rotates, it revolves around the central axis of the susceptor support member and rotates around the susceptor central axis.

本発明の気相成長装置によれば、上部サセプタ部材の下面と下部サセプタ部材の上面との間に形成される空間部の寸法を大きくすることによって基板温度を下げることができ、空間部の寸法を小さくすることによって基板温度を上げることができる。これにより、一度に複数の基板に薄膜を成長させる際の各基板の温度を均一化することができ、温度条件が厳しいＧａＮ系薄膜も効率よく気相成長させることができる。また、上部サセプタ部材及び下部サセプタ部材は、数ｍｍ以上の厚さで形成することができるので、製作も容易であり、取扱中に破損することもほとんどない。 According to the vapor phase growth apparatus of the present invention, the substrate temperature can be lowered by increasing the size of the space formed between the lower surface of the upper susceptor member and the upper surface of the lower susceptor member. The substrate temperature can be increased by reducing the value of. Thereby, the temperature of each substrate when growing thin films on a plurality of substrates at a time can be made uniform, and a GaN-based thin film having severe temperature conditions can also be vapor-grown efficiently. Further, since the upper susceptor member and the lower susceptor member can be formed with a thickness of several mm or more, they are easy to manufacture and are hardly damaged during handling.

本発明の気相成長装置の第１形態例を示す断面図である。It is sectional drawing which shows the 1st form example of the vapor phase growth apparatus of this invention. サセプタの伝熱量調整部の説明図である。It is explanatory drawing of the heat-transfer amount adjustment part of a susceptor. 伝熱量調整部による寸法調整の説明図である。It is explanatory drawing of the dimension adjustment by a heat-transfer amount adjustment part. 伝熱量調整部の第２形態例を示すサセプタの断面図である。It is sectional drawing of the susceptor which shows the 2nd example of a heat-transfer amount adjustment part. 伝熱量調整部の第３形態例を示すサセプタの断面図である。It is sectional drawing of the susceptor which shows the 3rd example of a heat-transfer amount adjustment part. 伝熱量調整部の第４形態例を示すサセプタの断面図である。It is sectional drawing of the susceptor which shows the 4th example of a heat-transfer amount adjustment part.

本形態例に示す気相成長装置は、上部中央にガス導入部１１を配設した偏平円筒状のチャンバー１２内に回転可能に設けられた大径円盤状のサセプタ支持部材１３と、該サセプタ支持部材１３の下方にリング状に設けられた加熱手段であるヒーター１４と、サセプタ支持部材１３の外周部に多数のボール１５を介して回転可能な状態で周方向に等間隔で設けられた複数のサセプタ１６と、前記チャンバー１２の外周部に設けられた内歯車部材１７と、前記チャンバー１２の外周に設けられた排気通路１８と、サセプタ支持部材１３を回転させる駆動軸１９とを備えた自公転型の気相成長装置である。 The vapor phase growth apparatus shown in the present embodiment includes a large-diameter disk-shaped susceptor support member 13 rotatably provided in a flat cylindrical chamber 12 having a gas introduction portion 11 disposed at the upper center, and the susceptor support. A heater 14 which is a heating means provided in a ring shape below the member 13 and a plurality of circumferentially spaced plural pieces provided on the outer periphery of the susceptor support member 13 in a state of being rotatable through a large number of balls 15. Rotation and revolution provided with a susceptor 16, an internal gear member 17 provided on the outer periphery of the chamber 12, an exhaust passage 18 provided on the outer periphery of the chamber 12, and a drive shaft 19 for rotating the susceptor support member 13. Type vapor phase growth apparatus.

前記サセプタ１６は、上面に基板２０を載置する基板載置部２１ａを有するとともに、外周に前記内歯車部材１７に歯合する外歯車２１ｂを有する上部サセプタ部材２１と、下面に前記ボール１５をガイドするリング状のガイド溝２２ａを有し、下方から前記ヒーター１４によって加熱される下部サセプタ部材２２と、上部サセプタ部材２１の下面外周部と下部サセプタ部材２２の上面外周部とに対向して設けられた伝熱量調整部２３とで形成されている。 The susceptor 16 has a substrate placing portion 21a for placing the substrate 20 on the upper surface, an upper susceptor member 21 having an outer gear 21b meshing with the internal gear member 17 on the outer periphery, and the ball 15 on the lower surface. A ring-shaped guide groove 22a for guiding is provided to face the lower susceptor member 22 heated by the heater 14 from below, the lower surface outer peripheral portion of the upper susceptor member 21, and the upper surface outer peripheral portion of the lower susceptor member 22. The heat transfer amount adjusting unit 23 is formed.

本形態例に示す伝熱量調整部２３は、下部サセプタ部材２２から上部サセプタ部材２１への伝熱量を３段階に調節可能に形成したものであって、前記基板載置部２１ａの外周側の上部サセプタ部材２１の外周部下面と、該上部サセプタ部材２１の外周部下面に対向する前記下部サセプタ部材２２の外周部上面との双方に、対向する下部サセプタ部材２２の外周部上面又は上部サセプタ部材２１の外周部下面に向かう突出寸法を３段階に異なる寸法とし、開き角度を４０度に設定した円弧状の階段状当接面２４ａ，２４ｂ，２４ｃを有する階段部２４を１２０度の位相差で３組形成した構造を有している。この伝熱量調整部２３は、各階段状当接面２４ａ，２４ｂ，２４ｃの当接状態を変更することにより、上部サセプタ部材２１の伝熱量調整部２３の内周側に位置する下面中央部と、同じく伝熱量調整部２３の内周側に位置する下部サセプタ部材２２の上面中央部との間に形成される空間部の大きさを調節することができるようにしている。 The heat transfer amount adjusting unit 23 shown in this embodiment is formed so that the heat transfer amount from the lower susceptor member 22 to the upper susceptor member 21 can be adjusted in three stages, and the upper portion on the outer peripheral side of the substrate mounting portion 21a. The upper surface of the outer peripheral portion of the lower susceptor member 22 or the upper susceptor member 21 opposed to both the lower surface of the outer peripheral portion of the susceptor member 21 and the upper surface of the outer peripheral portion of the lower susceptor member 22 facing the lower surface of the outer peripheral portion of the upper susceptor member 21. The stepped portion 24 having the arc-shaped stepped contact surfaces 24a, 24b, 24c having different projecting dimensions toward the lower surface of the outer peripheral portion in three stages and having an opening angle set to 40 degrees has a phase difference of 120 degrees. It has a structure formed as a set. The heat transfer amount adjusting portion 23 is formed by changing the contact state of each stepped contact surface 24a, 24b, 24c, and a lower surface central portion located on the inner peripheral side of the heat transfer amount adjusting portion 23 of the upper susceptor member 21. Similarly, the size of the space formed between the lower susceptor member 22 and the central portion of the upper surface of the lower susceptor member 22 located on the inner peripheral side of the heat transfer amount adjusting unit 23 can be adjusted.

すなわち、図３（ａ）に示すように、上部サセプタ部材２１の突出寸法が小さい階段状当接面２４ａと下部サセプタ部材２２の突出寸法が大きい階段状当接面２４ｃ、上部サセプタ部材２１の突出寸法が中間の階段状当接面２４ｂと上部サセプタ部材２１の突出寸法が中間の階段状当接面２４ｂ、上部サセプタ部材２１の突出寸法が大きい階段状当接面２４ｃと下部サセプタ部材２２の突出寸法が小さい階段状当接面２４ａとをそれぞれ当接させた状態では、上部サセプタ部材２１の下面中央部と下部サセプタ部材２２の上面中央部との間隔が最も接近した状態となり、上部サセプタ部材２１の下面中央部と下部サセプタ部材２２の上面中央部とが当接した状態あるいは僅かな空間が形成された状態となる。 That is, as shown in FIG. 3A, a stepped contact surface 24a having a small protruding dimension of the upper susceptor member 21, a stepped contact surface 24c having a large protruding dimension of the lower susceptor member 22, and a protrusion of the upper susceptor member 21. The stepped contact surface 24b having an intermediate size and the protrusion size of the upper susceptor member 21 having an intermediate protrusion size, the stepped contact surface 24c having a large protrusion size of the upper susceptor member 21 and the protrusion of the lower susceptor member 22 are projected. In a state where the stepped contact surfaces 24a having small dimensions are in contact with each other, the distance between the lower surface center portion of the upper susceptor member 21 and the upper surface center portion of the lower susceptor member 22 is closest, and the upper susceptor member 21 The lower surface center portion of the lower susceptor member 22 is in contact with the upper surface central portion of the lower susceptor member 22 or a slight space is formed.

また、図３（ｂ）に示すように、上部サセプタ部材２１の突出寸法が中間の階段状当接面２４ｂと下部サセプタ部材２２の突出寸法が大きい階段状当接面２４ｃ、上部サセプタ部材２１の突出寸法が大きい階段状当接面２４ｃと下部サセプタ部材２２の突出寸法が中間の階段状当接面２４ｂとをそれぞれ当接させた状態にすると、上部サセプタ部材２１の下面中央部と下部サセプタ部材２２の上面中央部との間隔が図３（ａ）に示す状態の間隔より開いた状態になる。 Further, as shown in FIG. 3B, the upper susceptor member 21 has an intermediate projecting stepped contact surface 24 b, the lower susceptor member 22 has a larger projecting size stepped contact surface 24 c, and the upper susceptor member 21. When the stepped contact surface 24c having a large protruding size and the stepped contact surface 24b having the intermediate protruding size of the lower susceptor member 22 are brought into contact with each other, the lower surface central portion and the lower susceptor member of the upper susceptor member 21 are brought into contact with each other. The distance from the center of the upper surface of 22 is larger than the distance shown in FIG.

さらに、図３（ｃ）に示すように、上部サセプタ部材２１の突出寸法が大きい階段状当接面２４ｃと下部サセプタ部材２２の突出寸法が大きい階段状当接面２４ｃとを当接させた状態にすると、上部サセプタ部材２１の下面中央部と下部サセプタ部材２２の上面中央部との間隔が図３（ｂ）に示す状態の間隔よりも更に大きくなって最も大きい空間が形成された状態となる。 Further, as shown in FIG. 3C, the stepped contact surface 24c having a large protruding dimension of the upper susceptor member 21 and the stepped contact surface 24c having a large protruding dimension of the lower susceptor member 22 are brought into contact with each other. As a result, the distance between the central portion of the lower surface of the upper susceptor member 21 and the central portion of the upper surface of the lower susceptor member 22 is larger than the distance shown in FIG. 3B, and the largest space is formed. .

このように、階段部２４における階段状当接面２４ａ，２４ｂ，２４ｃの当接状態を変更して上部サセプタ部材２１の下面中央部と下部サセプタ部材２２の上面中央部との間に形成される空間の大きさを変えることにより、下部サセプタ部材２２から上部サセプタ部材２１への伝熱量を調節することができる。すなわち、上部サセプタ部材２１の下面中央部と下部サセプタ部材２２の上面中央部との間隔を小さくすると伝熱量を多くすることができ、上部サセプタ部材２１の下面中央部と下部サセプタ部材２２の上面中央部との間隔を大きくすると伝熱量を少なくすることができる。 Thus, the contact state of the stair-like contact surfaces 24 a, 24 b, 24 c in the staircase portion 24 is changed to be formed between the lower surface center portion of the upper susceptor member 21 and the upper surface center portion of the lower susceptor member 22. By changing the size of the space, the amount of heat transfer from the lower susceptor member 22 to the upper susceptor member 21 can be adjusted. That is, if the distance between the lower surface center portion of the upper susceptor member 21 and the upper surface center portion of the lower susceptor member 22 is reduced, the amount of heat transfer can be increased, and the lower surface center portion of the upper susceptor member 21 and the upper surface center of the lower susceptor member 22 can be increased. Increasing the distance to the part can reduce the amount of heat transfer.

したがって、サセプタ支持部材１３に支持される複数のサセプタ１６の基板載置部２１ａにそれぞれ載置されている各基板２０の温度が異なっている場合、基板２０の温度が目標温度に比べて低いときには、図３（ａ）に示すように上部サセプタ部材２１と下部サセプタ部材２２とを接近させた状態にすることにより伝熱量を多くして基板２０の温度を高くすることができ、基板２０の温度が目標温度に比べて高いときには図３（ｃ）に示すように上部サセプタ部材２１と下部サセプタ部材２２とを離れた状態にすることにより伝熱量を少なくして基板２０の温度を低くすることができる。 Therefore, when the temperatures of the substrates 20 mounted on the substrate mounting portions 21a of the plurality of susceptors 16 supported by the susceptor support member 13 are different, the temperature of the substrate 20 is lower than the target temperature. As shown in FIG. 3A, by bringing the upper susceptor member 21 and the lower susceptor member 22 close to each other, the amount of heat transfer can be increased and the temperature of the substrate 20 can be increased. When the temperature is higher than the target temperature, the temperature of the substrate 20 can be lowered by reducing the amount of heat transfer by separating the upper susceptor member 21 and the lower susceptor member 22 as shown in FIG. it can.

これにより、サセプタ１６の各部の製作誤差や長時間の使用による消耗などでヒーター１４から下部サセプタ部材２２及び上部サセプタ部材２１を介して加熱される基板２０の温度が異なった場合でも、階段状当接面２４ａ，２４ｂ，２４ｃの当接状態を変更して下部サセプタ部材２２から上部サセプタ部材２１への伝熱量を調整することにより、気相成長操作中の複数の基板２０の温度差を小さくすることができるなるので、均一な温度条件で薄膜を気相成長させることができる。 Thereby, even if the temperature of the substrate 20 heated from the heater 14 via the lower susceptor member 22 and the upper susceptor member 21 is different due to manufacturing errors of each part of the susceptor 16 or wear due to long-term use, the stepped contact By changing the contact state of the contact surfaces 24a, 24b, 24c and adjusting the amount of heat transfer from the lower susceptor member 22 to the upper susceptor member 21, the temperature difference between the plurality of substrates 20 during the vapor phase growth operation is reduced. Therefore, the thin film can be vapor-phase grown under uniform temperature conditions.

階段状当接面２４ａ，２４ｂ，２４ｃの突出寸法差は、基板加熱温度やサセプタ１６の構造、階段状当接面の段差数などの条件に応じて適宜設定することができるが、通常は、０．１〜０．５ｍｍ程度が適当である。また、本形態例に示すように、階段状当接面２４ａ，２４ｂ，２４ｃを等間隔で３組設けることにより、階段状当接面２４ａ，２４ｂ，２４ｃを介して下部サセプタ部材２２の上に載置された状態となる上部サセプタ部材２１を安定した状態とすることができるとともに、伝熱量調整部２３の加工工数も最小とすることができる。 The projecting dimension difference between the stepped contact surfaces 24a, 24b, and 24c can be appropriately set according to conditions such as the substrate heating temperature, the structure of the susceptor 16, the number of steps of the stepped contact surface, etc. About 0.1 to 0.5 mm is appropriate. Further, as shown in the present embodiment, by providing three sets of stepped contact surfaces 24a, 24b, 24c at equal intervals, the lower susceptor member 22 is provided via the stepped contact surfaces 24a, 24b, 24c. The upper susceptor member 21 that is placed can be in a stable state, and the number of processing steps of the heat transfer amount adjusting unit 23 can be minimized.

なお、本形態例では、上部サセプタ部材２１及び下部サセプタ部材２２の双方に階段状当接面２４ａ，２４ｂ，２４ｃを設けているが、階段状当接面２４ａ，２４ｂ，２４ｃを上部サセプタ部材２１及び下部サセプタ部材２２の一方に設け、他方には突出寸法が最大の階段状当接面２４ｃと同じ突出寸法あるいは大きな突出寸法を有する突出面を１２０度の等間隔で３カ所に突設し、該突出面を階段状当接面２４ａ，２４ｂ，２４ｃのいずれかに当接させることで上部サセプタ部材２１と下部サセプタ部材２２との間隔を調節するように形成することもできる。 In this embodiment, the stepped contact surfaces 24a, 24b, and 24c are provided on both the upper susceptor member 21 and the lower susceptor member 22, but the stepped contact surfaces 24a, 24b, and 24c are provided on the upper susceptor member 21. The lower susceptor member 22 is provided on one side, and on the other side, projecting surfaces having the same or larger projecting dimensions as the stepped contact surface 24c having the largest projecting dimension are projected at three positions at equal intervals of 120 degrees. It is also possible to adjust the distance between the upper susceptor member 21 and the lower susceptor member 22 by bringing the protruding surface into contact with any one of the stepped contact surfaces 24a, 24b, and 24c.

図４の第２形態例に示すサセプタは、階段部２４の当接面に凹凸係合部２５を設け、前記階段状当接面２４ａ，２４ｂ，２４ｃをそれぞれ当接させたときの上部サセプタ部材２１と下部サセプタ部材２２との位置ずれを防止し、サセプタを逆回転することも可能な構造としたものである。 The susceptor shown in the second embodiment of FIG. 4 is provided with an uneven engagement portion 25 on the contact surface of the stepped portion 24, and the upper susceptor member when the stepped contact surfaces 24a, 24b, 24c are contacted respectively. 21 and the lower susceptor member 22 are prevented from being displaced, and the susceptor can be rotated in the reverse direction.

図５の第３形態例に示すサセプタは、下部サセプタ部材２２の上面にドーム状凹部２６を形成し、外周部に比べて相対的に伝熱量が多くなるサセプタ中央部２６ａにおける上下サセプタ部材間の間隔を、サセプタ外周部２６ｂにおける上下サセプタ部材間の間隔より広くすることによってサセプタ径方向における基板２０の温度分布を小さくしたものである。このようなドーム状凹部２６は、下部サセプタ部材２２の上面ではなく、上部サセプタ部材２１の下面に形成することもでき、図６の第４形態例に示すように、上部サセプタ部材２１の下面と下部サセプタ部材２２の上面との双方にドーム状凹部２６をそれぞれ形成することもできる。ドーム状凹部２６の形状は、サセプタの直径などの条件に応じて適宜設定することができる。 The susceptor shown in the third embodiment of FIG. 5 is formed with a dome-shaped recess 26 on the upper surface of the lower susceptor member 22 and between the upper and lower susceptor members in the susceptor central portion 26a where the amount of heat transfer is relatively larger than the outer peripheral portion. The temperature distribution of the substrate 20 in the susceptor radial direction is reduced by making the interval wider than the interval between the upper and lower susceptor members in the susceptor outer peripheral portion 26b. Such a dome-shaped recess 26 can be formed not on the upper surface of the lower susceptor member 22 but on the lower surface of the upper susceptor member 21, and as shown in the fourth embodiment of FIG. The dome-shaped recess 26 can be formed on both the upper surface of the lower susceptor member 22. The shape of the dome-shaped recess 26 can be appropriately set according to conditions such as the diameter of the susceptor.

なお、気相成長装置の構造や基板を自公転させる構造は特に限定されるものではなく、処理する基板の大きさや気相成長させる薄膜の種類などの条件に応じて適宜最適な構造を採用することが可能である。また、本発明は、自公転型の気相成長装置に限らず、基板を公転させるだけの構造を有するサセプタを備えた気相成長装置にも適用可能である。さらに、前述のような階段部を設けずに、上部サセプタ部材の下面又は下部サセプタ部材の上面に伝熱量調整部となるリング状の支持部を突設し、この支持部を介して上部サセプタ部材を支持し、支持部先端面を削ったりして支持部突出寸法を変えることにより、上部サセプタ部材と下部サセプタ部材との間に形成される空間部の大きさを調節して伝熱量を最適化することも可能である。 Note that the structure of the vapor phase growth apparatus and the structure for revolving the substrate are not particularly limited, and an optimum structure is appropriately adopted according to conditions such as the size of the substrate to be processed and the type of thin film to be vapor grown. It is possible. The present invention is not limited to a self-revolution type vapor phase growth apparatus, but can be applied to a vapor phase growth apparatus including a susceptor having a structure that only revolves a substrate. Further, without providing the above-described stepped portion, a ring-shaped support portion serving as a heat transfer amount adjustment portion is provided on the lower surface of the upper susceptor member or the upper surface of the lower susceptor member, and the upper susceptor member is interposed through this support portion. The size of the space formed between the upper susceptor member and the lower susceptor member is adjusted to optimize the heat transfer amount by changing the protrusion size of the support portion by cutting the front end surface of the support portion. It is also possible to do.

１１…ガス導入部、１２…チャンバー、１３…サセプタ支持部材、１４…ヒーター、１５…ボール、１６…サセプタ、１７…内歯車部材、１８…排気通路、１９…駆動軸、２０…基板、２１…上部サセプタ部材、２１ａ…基板載置部、２１ｂ…外歯車、２２…下部サセプタ部材、２２ａ…ガイド溝、２３…伝熱量調整部、２４…階段部、２４ａ，２４ｂ，２４ｃ…階段状当接面、２５…凹凸係合部、２６…ドーム状凹部 DESCRIPTION OF SYMBOLS 11 ... Gas introduction part, 12 ... Chamber, 13 ... Susceptor support member, 14 ... Heater, 15 ... Ball, 16 ... Susceptor, 17 ... Internal gear member, 18 ... Exhaust passage, 19 ... Drive shaft, 20 ... Substrate, 21 ... Upper susceptor member, 21a ... substrate mounting portion, 21b ... external gear, 22 ... lower susceptor member, 22a ... guide groove, 23 ... heat transfer amount adjusting portion, 24 ... stepped portion, 24a, 24b, 24c ... stepped contact surface , 25 ... concave-convex engaging portion, 26 ... dome-shaped concave portion

Claims

チャンバー内に回転可能に設けられた円盤状のサセプタと、該サセプタの上面に設けられた基板載置部と、前記チャンバー内に原料ガスを導入する原料ガス導入部と、前記チャンバーの反原料ガス導入部側に設けられた排気部と、前記基板載置部に載置された基板を前記サセプタの下面側から加熱する加熱手段とを備え、前記サセプタの回転に伴って前記基板を回転させるとともに、前記原料ガス導入部から原料ガスを導入して前記加熱手段により加熱された基板の上面に薄膜を気相成長させる気相成長装置において、前記サセプタは、前記基板載置部を有する上部サセプタ部材と、前記加熱手段によって加熱される下部サセプタ部材と、前記上部サセプタ部材の下面と前記下部サセプタ部材の上面との間に形成される空間部の寸法を調節して下部サセプタ部材から上部サセプタ部材への伝熱量を調節する伝熱量調整部とを備え、
前記サセプタの伝熱量調整部は、前記基板載置部の外周側の上部サセプタ部材の外周部下面と、該上部サセプタ部材の下面に対向する前記下部サセプタ部材の外周部上面とのいずれか一方の面に、他方の面に向かう突出寸法が異なる階段状当接面を有する階段部を周方向に複数形成するとともに、他方の面には、前記複数の階段部における突出寸法が同一の各階段状当接面に当接する複数の突出面を形成し、前記階段状当接面のいずれか一つの当接面と前記突出面とを当接させた際の階段状当接面の突出寸法によって前記上部サセプタ部材の下面と前記下部サセプタ部材の上面との間隔が調節可能となっていることを特徴とする気相成長装置。 A disk-shaped susceptor rotatably provided in the chamber, a substrate mounting portion provided on the upper surface of the susceptor, a raw material gas introducing portion for introducing a raw material gas into the chamber, and an anti-raw material gas in the chamber An exhaust section provided on the introduction section side, and heating means for heating the substrate mounted on the substrate mounting section from the lower surface side of the susceptor, and rotating the substrate as the susceptor rotates. In the vapor phase growth apparatus for vapor-phase-growing a thin film on the upper surface of the substrate heated by the heating means by introducing the source gas from the source gas introduction unit, the susceptor has an upper susceptor member having the substrate mounting unit And adjusting the size of the lower susceptor member heated by the heating means, and the space formed between the lower surface of the upper susceptor member and the upper surface of the lower susceptor member. And a heat transmission controller unit for adjusting the amount of heat transfer from the lower susceptor member to the upper susceptor member,
The heat transfer amount adjustment part of the susceptor is one of an outer peripheral part lower surface of the upper susceptor member on an outer peripheral side of the substrate mounting part and an outer peripheral part upper surface of the lower susceptor member facing the lower surface of the upper susceptor member. A plurality of stepped portions having a stepped contact surface with different projecting dimensions toward the other surface are formed on the surface in the circumferential direction, and each stepped shape having the same projecting dimensions at the plurality of stepped portions is formed on the other surface. A plurality of projecting surfaces that abut on the abutting surface are formed, and depending on the projecting dimension of the stepped contact surface when any one of the stepped contact surfaces and the projecting surface are contacted, A vapor phase growth apparatus characterized in that an interval between a lower surface of an upper susceptor member and an upper surface of the lower susceptor member can be adjusted .

前記サセプタは、チャンバー内に回転可能に設けられた円盤状のサセプタ支持部材の外周部の周方向に複数個が等間隔で回転可能に設けられ、前記サセプタ支持部材の回転に伴い、サセプタ支持部材の中心軸を中心として公転するとともに、サセプタ中心軸を中心として自転することを特徴とする請求項１記載の気相成長装置。 A plurality of the susceptors are rotatably provided at equal intervals in the circumferential direction of the outer periphery of a disc-shaped susceptor support member rotatably provided in the chamber, and the susceptor support member is rotated along with the rotation of the susceptor support member. The vapor phase growth apparatus according to claim 1, wherein the vapor phase growth apparatus revolves around a central axis of the susceptor and rotates around the central axis of the susceptor.