JP5430850B2 - 半導体発光装置用封止材の製造方法 - Google Patents
半導体発光装置用封止材の製造方法 Download PDFInfo
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- JP5430850B2 JP5430850B2 JP2007338043A JP2007338043A JP5430850B2 JP 5430850 B2 JP5430850 B2 JP 5430850B2 JP 2007338043 A JP2007338043 A JP 2007338043A JP 2007338043 A JP2007338043 A JP 2007338043A JP 5430850 B2 JP5430850 B2 JP 5430850B2
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- Prior art keywords
- sealing material
- light emitting
- semiconductor light
- emitting device
- manufacturing
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- 239000004065 semiconductor Substances 0.000 title claims description 34
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 13
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- 238000000034 method Methods 0.000 claims description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 12
- 150000004756 silanes Chemical class 0.000 claims description 8
- 150000004819 silanols Chemical class 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 7
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- 238000001035 drying Methods 0.000 claims description 2
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- -1 dimethylsiloxane Chemical class 0.000 description 12
- 239000000463 material Substances 0.000 description 11
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- 125000004400 (C1-C12) alkyl group Chemical group 0.000 description 1
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- GURLKCSHWXYLIK-UHFFFAOYSA-N C(C)OC(C=CO[SiH3])OCC Chemical compound C(C)OC(C=CO[SiH3])OCC GURLKCSHWXYLIK-UHFFFAOYSA-N 0.000 description 1
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- 125000003545 alkoxy group Chemical group 0.000 description 1
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- 235000012211 aluminium silicate Nutrition 0.000 description 1
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- 125000003118 aryl group Chemical group 0.000 description 1
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- JYVWRCIOZLRMKO-UHFFFAOYSA-N tributyl(hydroxy)silane Chemical compound CCCC[Si](O)(CCCC)CCCC JYVWRCIOZLRMKO-UHFFFAOYSA-N 0.000 description 1
- ZLGWXNBXAXOQBG-UHFFFAOYSA-N triethoxy(3,3,3-trifluoropropyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC(F)(F)F ZLGWXNBXAXOQBG-UHFFFAOYSA-N 0.000 description 1
- MLXDKRSDUJLNAB-UHFFFAOYSA-N triethoxy(3,3,4,4,5,5,6,6,7,7,8,8,9,9,10,10,10-heptadecafluorodecyl)silane Chemical compound CCO[Si](OCC)(OCC)CCC(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)C(F)(F)F MLXDKRSDUJLNAB-UHFFFAOYSA-N 0.000 description 1
- CPUDPFPXCZDNGI-UHFFFAOYSA-N triethoxy(methyl)silane Chemical compound CCO[Si](C)(OCC)OCC CPUDPFPXCZDNGI-UHFFFAOYSA-N 0.000 description 1
- FHVAUDREWWXPRW-UHFFFAOYSA-N triethoxy(pentyl)silane Chemical compound CCCCC[Si](OCC)(OCC)OCC FHVAUDREWWXPRW-UHFFFAOYSA-N 0.000 description 1
- JCVQKRGIASEUKR-UHFFFAOYSA-N triethoxy(phenyl)silane Chemical compound CCO[Si](OCC)(OCC)C1=CC=CC=C1 JCVQKRGIASEUKR-UHFFFAOYSA-N 0.000 description 1
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- XYJRNCYWTVGEEG-UHFFFAOYSA-N trimethoxy(2-methylpropyl)silane Chemical compound CO[Si](OC)(OC)CC(C)C XYJRNCYWTVGEEG-UHFFFAOYSA-N 0.000 description 1
- JLGNHOJUQFHYEZ-UHFFFAOYSA-N trimethoxy(3,3,3-trifluoropropyl)silane Chemical compound CO[Si](OC)(OC)CCC(F)(F)F JLGNHOJUQFHYEZ-UHFFFAOYSA-N 0.000 description 1
- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 description 1
- AAPLIUHOKVUFCC-UHFFFAOYSA-N trimethylsilanol Chemical compound C[Si](C)(C)O AAPLIUHOKVUFCC-UHFFFAOYSA-N 0.000 description 1
- OZWKZRFXJPGDFM-UHFFFAOYSA-N tripropoxysilane Chemical compound CCCO[SiH](OCCC)OCCC OZWKZRFXJPGDFM-UHFFFAOYSA-N 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- 125000005023 xylyl group Chemical group 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/04—Polysiloxanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Led Device Packages (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Description
前記混合溶液を発光素子に塗布する第2の工程と、
前記混合溶液中の前記アルコール溶液成分を室温で乾燥する第3の工程と、
前記第3の工程に引続いて、加熱硬化させる第4の工程と
を備え、
前記封止材中に含まれる、下記一般式(1)で表される前記低分子シラン類または下記一般式(2)で表される前記シラノール類は、前記加熱硬化後の前記封止材重量に対して、10重量%以上、50重量%以下の含有量で混合されていることを特徴とする。
オクチルトリメトキシシラン、オクチルトリエトキシシラン、トリメトキシシラン、トリエトキシシラン、トリn−プロポキシシラン、トリイソプロポキシキシシラン、トリブトキシシラン、トリイソプロペノキシシラン、ジエトキシプロペノキシシラン、メチルジメトキシシラン、メチルジエトキシシラン、メチルジn−プロポキシシラン、メチルジイソプロペノキシシラン、メチルジ(2−メトキシエトキシ)シラン、エチルジメトキシシラン、エチルジエトキシシラン、n−プロピルジメトキシシラン、n−プロピルジエトキシヘキシルジメトキシシラン、ヘキシルジエトキシ、オクチルジメトキシシラン、オクチルジエトキシ等が挙げられるがこれらに限定されるものではない。特に好ましくは、エチルトリエトキシシラン、プロピルトリエトキシシラン、 ブチルトリエトキシシラン、イソブチルトリエトキシシラン、ペンチルトリエトキシシラン、ヘキシルトリエトキシシランである。
(サンプル板作製)
アルコキシシロキサンを含有するアルコール溶液としてテリオスコート((株)日興製)3mLをピペットで量りとりアルミプレートに滴下し、低分子シラノールとしてトリエチルシラノールを封止材の乾燥重量の10重量%である0.17mL加え混合溶液を調製した。
サンプル板と同様の割合でテリオスコート及びトリエチルシラノールをガラス容器中に調整し、自転公転ミキサーで5分間攪拌した。得られた溶液を半導体発光装置の凹部内に注入し、常温で2日間乾燥後、乾燥機で200℃で焼成した。得られた封止材のクラックの発生率、膜厚を表1に示す。
封止材の乾燥重量の30重量%のトリエチルシラノールを加える以外は実施例1と同様の操作を行った。クラックの発生確率を表1に示す。
封止材の乾燥重量の50重量%のトリエチルシラノールを加える以外は実施例1と同様の操作を行った。クラックの発生確率を表1に示す。
(サンプル板作製)
テリオスコートを3ml量りとり、アルミカップ上に滴下し、常温で二日間乾燥させた。封止材の中心はアルミプレートに接触していたが、末端部が5mmほど浮き上がり、反りのある組成物が得られた。
封止材の乾燥重量の70重量%のトリエチルシラノールを加える以外は実施例1と同様の操作を行った。クラックの発生はなかったが、透明度が悪くなり白色を帯びた材料となり非常に脆いものとなった。これは材料中のSi−O結合の数が減少するためと考えられる。
テリオスコートのみを半導体発光装置の凹部内に注入し、常温で2日間乾燥後、乾燥機で200℃で焼成した。クラックの発生率は100%となった。
低分子シランとして、0.17mLのドデシルメトキシシランを用いて混合溶液を調製した。
2 リードフレーム
3 絶縁性樹脂
4 凹部
5 ダイボンド材
6 封止材
7 発光素子
Claims (6)
- 「下記一般式(1)で表される低分子シラン類または下記一般式(2)で表されるシラノール類、およびアルコキシシロキサンを含有するアルコール混合溶液を調製する第1の工程と、
前記混合溶液を発光素子に塗布する第2の工程と、
前記混合溶液中の前記アルコール溶液成分を室温で乾燥する第3の工程と、
前記第3の工程に引続いて、加熱硬化させる第4の工程と
を備え、
前記封止材中に含まれる、下記一般式(1)で表される前記低分子シラン類または下記一般式(2)で表される前記シラノール類は、前記加熱硬化後の前記封止材重量に対して、10重量%以上、50重量%以下の含有量で混合されていることを特徴とする半導体発光装置用封止材の製造方法。
- 前記第1の工程は、蛍光体およびフィラーを混合する工程を備えることを特徴とする請求
項1に記載の半導体発光装置用封止材の製造方法。 - 前記第1の工程は、前記封止材の乾燥重量に対して、40重量%以上、80重量%以下の
前記蛍光体を混合する工程を備えることを特徴とする請求項1または2に記載の半導体発
光装置用封止材の製造方法。 - 前記第1の工程は、前記封止材の乾燥重量に対して、0.1重量%以上、20重量%以下
の前記フィラーを混合する工程を備えることを特徴とする請求項1乃至3のいずれかに記
載の半導体発光装置用封止材の製造方法。 - 前記蛍光体は、平均粒径が、5μm以上、30μm以下であることを特徴とする請求項2
乃至4のいずれかに記載の半導体発光装置用封止材の製造方法。 - 前記フィラーは、平均粒径が、0.001μm以上、0.1μm以下であることを特徴と
する請求項2乃至4のいずれかに記載の半導体発光装置用封止材の製造方法。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
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JP2007338043A JP5430850B2 (ja) | 2007-12-27 | 2007-12-27 | 半導体発光装置用封止材の製造方法 |
US12/343,191 US7838311B2 (en) | 2007-12-27 | 2008-12-23 | Process for producing light-emitting semiconductor device |
KR1020080134308A KR100997286B1 (ko) | 2007-12-27 | 2008-12-26 | 반도체 발광 장치의 제조 방법 |
CN2008101847289A CN101471414B (zh) | 2007-12-27 | 2008-12-29 | 半导体发光装置的制造方法 |
Applications Claiming Priority (1)
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JP2007338043A JP5430850B2 (ja) | 2007-12-27 | 2007-12-27 | 半導体発光装置用封止材の製造方法 |
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JP2009158852A JP2009158852A (ja) | 2009-07-16 |
JP5430850B2 true JP5430850B2 (ja) | 2014-03-05 |
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US (1) | US7838311B2 (ja) |
JP (1) | JP5430850B2 (ja) |
KR (1) | KR100997286B1 (ja) |
CN (1) | CN101471414B (ja) |
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CN105762257A (zh) * | 2011-08-02 | 2016-07-13 | 亿光电子(中国)有限公司 | 荧光粉组成及使用该荧光粉组成的白色发光装置 |
WO2013051281A1 (ja) * | 2011-10-07 | 2013-04-11 | コニカミノルタアドバンストレイヤー株式会社 | Led装置の製造方法、およびそれに用いる蛍光体分散液 |
US20170355877A1 (en) * | 2016-06-09 | 2017-12-14 | Dongguan Tiankai Electronic Co. Ltd. | Curable organopolysiloxane composition and its application |
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US4632798A (en) * | 1983-07-27 | 1986-12-30 | Celanese Corporation | Encapsulation of electronic components with anisotropic thermoplastic polymers |
JPH0214834A (ja) | 1988-06-29 | 1990-01-18 | Hitachi Chem Co Ltd | シリカガラスの製造法 |
US5447576A (en) * | 1992-08-03 | 1995-09-05 | Siemens Solar Industries International, Inc. | Composition and method for encapsulating a solar cell which minimizes thermal discoloration |
US5895228A (en) * | 1996-11-14 | 1999-04-20 | International Business Machines Corporation | Encapsulation of organic light emitting devices using Siloxane or Siloxane derivatives |
JP2003313233A (ja) | 2002-04-26 | 2003-11-06 | Toyota Motor Corp | ゾルゲル法による有機無機複合体の製造方法 |
JP2004168953A (ja) | 2002-11-22 | 2004-06-17 | Fuji Photo Film Co Ltd | 有機−無機ハイブリッド材料およびその製造方法 |
JP2004339319A (ja) | 2003-05-14 | 2004-12-02 | Japan Epoxy Resin Kk | エポキシ樹脂組成物及び発光素子封止材用エポキシ樹脂組成物 |
US20050264194A1 (en) * | 2004-05-25 | 2005-12-01 | Ng Kee Y | Mold compound with fluorescent material and a light-emitting device made therefrom |
JP2006131850A (ja) * | 2004-11-09 | 2006-05-25 | Toagosei Co Ltd | 熱硬化性組成物 |
JP4882413B2 (ja) * | 2005-02-23 | 2012-02-22 | 三菱化学株式会社 | 半導体発光デバイス用部材及びその製造方法、並びにそれを用いた半導体発光デバイス |
JP4754240B2 (ja) | 2005-03-03 | 2011-08-24 | 京セラケミカル株式会社 | エポキシ樹脂組成物および光半導体装置 |
JP2008536328A (ja) | 2005-04-14 | 2008-09-04 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 発光デバイス |
KR100665368B1 (ko) | 2006-02-07 | 2007-01-09 | 삼성전기주식회사 | 형광체막 형성방법 및 이를 이용한 발광다이오드 패키지제조방법 |
JP2008244357A (ja) | 2007-03-28 | 2008-10-09 | Toshiba Corp | 半導体発光装置 |
JP4266234B2 (ja) | 2007-03-29 | 2009-05-20 | 株式会社東芝 | 半導体発光装置の製造方法 |
-
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- 2007-12-27 JP JP2007338043A patent/JP5430850B2/ja not_active Expired - Fee Related
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2008
- 2008-12-23 US US12/343,191 patent/US7838311B2/en not_active Expired - Fee Related
- 2008-12-26 KR KR1020080134308A patent/KR100997286B1/ko not_active IP Right Cessation
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CN101471414B (zh) | 2010-12-08 |
CN101471414A (zh) | 2009-07-01 |
KR20090071469A (ko) | 2009-07-01 |
US20090176323A1 (en) | 2009-07-09 |
JP2009158852A (ja) | 2009-07-16 |
KR100997286B1 (ko) | 2010-11-29 |
US7838311B2 (en) | 2010-11-23 |
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