JP5402264B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP5402264B2 JP5402264B2 JP2009137074A JP2009137074A JP5402264B2 JP 5402264 B2 JP5402264 B2 JP 5402264B2 JP 2009137074 A JP2009137074 A JP 2009137074A JP 2009137074 A JP2009137074 A JP 2009137074A JP 5402264 B2 JP5402264 B2 JP 5402264B2
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- 239000000758 substrate Substances 0.000 claims description 43
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 23
- 238000007747 plating Methods 0.000 claims description 7
- 239000000463 material Substances 0.000 description 20
- 229920005989 resin Polymers 0.000 description 16
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- 238000007789 sealing Methods 0.000 description 16
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- 239000000203 mixture Substances 0.000 description 13
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- 239000010931 gold Substances 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 7
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
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- 229910052784 alkaline earth metal Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
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- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 5
- 229910052747 lanthanoid Inorganic materials 0.000 description 5
- 150000002602 lanthanoids Chemical class 0.000 description 5
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- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
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- 229910052709 silver Inorganic materials 0.000 description 5
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
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- -1 nitride silicate Chemical class 0.000 description 4
- 150000004767 nitrides Chemical class 0.000 description 4
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- 229910052697 platinum Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 239000010410 layer Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 229910052761 rare earth metal Inorganic materials 0.000 description 3
- 229910015363 Au—Sn Inorganic materials 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
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- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- 229910001080 W alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 150000004645 aluminates Chemical class 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 2
- 239000002356 single layer Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910017083 AlN Inorganic materials 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- 229910000906 Bronze Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910052765 Lutetium Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229920001807 Urea-formaldehyde Polymers 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- 239000006230 acetylene black Substances 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 229910052915 alkaline earth metal silicate Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 239000010974 bronze Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001444 catalytic combustion detection Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910000428 cobalt oxide Inorganic materials 0.000 description 1
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 239000000428 dust Substances 0.000 description 1
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- 238000005530 etching Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical class C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- CNQCVBJFEGMYDW-UHFFFAOYSA-N lawrencium atom Chemical compound [Lr] CNQCVBJFEGMYDW-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011572 manganese Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052914 metal silicate Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000012860 organic pigment Substances 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000004382 potting Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- RMAQACBXLXPBSY-UHFFFAOYSA-N silicic acid Chemical compound O[Si](O)(O)O RMAQACBXLXPBSY-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 229910000314 transition metal oxide Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
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- Led Device Packages (AREA)
Description
光取り出し効率が高く、薄型の発光装置を、容易に得ることができる。
本実施の形態の発光装置100を図1A、図1Bに示す。図1Aは発光装置100の斜視図であり、図1Bは図1AのA−A’断面における断面図である。
基体は、発光素子からの光を遮光させることで、上面への光取り出し効率を向上させるものであり、一対の導電部材を一体的に保持するものである。本実施の形態では、図1A、図1Bに示すように、基体103は、底面及び側壁からなる凹部Sを有しており、この凹部Sの底面には、基体103の底面部103aを介して設けられる導電部材101の上面の一部が露出している。基体103の裏面においても導電部材101の下面が露出しており、基体103の下面と導電部材101の下面とが同一面上に位置している。
導電部材は、発光素子に直接又は間接的に電気的に接続して外部から供給される電気を通電させるための一対の電極として機能させるものであり、少なくとも一方の導電部材は上面に台座部材が載置可能な大きさを有しており、絶縁部材(基体)を介して設けられる他方の導電部材は導電性ワイヤが接続可能な大きさを有している。導電部材の下面は、発光装置の外面を構成するよう露出されており、これによって外部と導通させることができる。
台座部材は、傾斜面を有する導電部材上に接合されるものであり、その上に載置させる発光素子が水平になるようにするものである。
封止部材は、発光素子、受光素子、保護素子、更には導電性ワイヤなどの電子部品を、塵芥や水分、更には外力などから保護する部材であり、本実施の形態においては、図1A、図1Bに示すように、基体103の凹部S内に充填されている。
接合部材は、導電部材上に台座部材を接合する部材であり、他にも発光素子や保護素子などを台座部材などに接合させる部材としても用いられる。
発光素子の電極と、直接又は間接的に導電部材や台座部材とを接続する導電性ワイヤは、金、銅、白金、アルミニウム等の金属及びそれらの合金を用いた導電性ワイヤが挙げられる。特に、熱抵抗などに優れた金を用いるのが好ましい。
上記封止部材中に、波長変換部材として発光素子からの光の少なくとも一部を吸収して異なる波長を有する光を発する蛍光部材を含有させることもできる。
本発明においては、発光素子として、同一面側に正負電極が形成された構造、或いは異なる面に正負電極が形成された構造、成長基板とは異なる基板を貼り合わせた構造等、種々の構造の半導体素子を用いることができる。
以上のような発光装置は、以下のようにして得ることができる。
101・・・導電部材
102・・・発光素子
103・・・基体
103a・・・基体の底面部
103b・・・基体の側壁
S・・・基体の凹部
X・・・底面部の延在部
104・・・台座部材
105・・・導電性ワイヤ
106・・・封止部材
Claims (2)
- 凹部を有する基体と、
前記凹部の底面に露出される一対の導電部材と、
該一対の導電部材のいずれか一方の上に載置される台座部材と、
該台座部材の上に載置され、前記導電部材と電気的に接続される発光素子と、を有する発光装置であって、
前記導電部材は、鍍金であり、
前記導電部材の下面は、前記基体の下面と同一面上にあり、
前記基体は、前記凹部の底面の一対の導電部材の間に設けられ、前記導電部材の上面よりも高さが高い底面部を有し、
前記底面部は、前記凹部の中央よりも前記基体の側壁側に設けられ、前記導電部材の上面に延在する延在部を有し、前記延在部は前記導電部材間に沿ってのみ形成されており、
前記台座部材の上面は、前記底面部の上面よりも高いことを特徴とする発光装置。 - 凹部を有する基体と、前記凹部の底面に露出される一対の導電部材と、前記一対の導電部材のいずれか一方の上に載置される台座部材と、前記台座部材の上に載置され、前記導電部材と電気的に接続される発光素子と、を備える発光装置の製造方法であって、
前記一対の導電部材の間が、前記凹部の中央よりも側壁側にくるように、鍍金によって前記導電部材を支持基板上に形成する第1の工程と、
前記基体を、前記導電部材の外縁を被覆する側壁と、前記一対の導電部材の間の底面部とを有し、前記底面部の上面が前記台座部材の上面よりも低く、前記導電部材の上面に延在する延在部を有するように、前記支持基板上に形成する第2の工程と、
前記発光素子を、前記凹部の略中央に形成された方の前記導電部材上に配置する第3の工程と、
前記発光素子と前記導電部材とを導電性ワイヤで接続する第4の工程と、
前記支持基板を除去する第5の工程と、を有し、
前記第2の工程において、前記延在部は前記導電部材間に沿ってのみ形成することを特徴とする発光装置の製造方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009137074A JP5402264B2 (ja) | 2009-06-08 | 2009-06-08 | 発光装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009137074A JP5402264B2 (ja) | 2009-06-08 | 2009-06-08 | 発光装置 |
Publications (2)
Publication Number | Publication Date |
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JP2010283261A JP2010283261A (ja) | 2010-12-16 |
JP5402264B2 true JP5402264B2 (ja) | 2014-01-29 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP2009137074A Expired - Fee Related JP5402264B2 (ja) | 2009-06-08 | 2009-06-08 | 発光装置 |
Country Status (1)
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JP (1) | JP5402264B2 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
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US11417808B2 (en) | 2019-09-12 | 2022-08-16 | Nichia Corporation | Light emitting device |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005079329A (ja) * | 2003-08-29 | 2005-03-24 | Stanley Electric Co Ltd | 表面実装型発光ダイオード |
JP2007096079A (ja) * | 2005-09-29 | 2007-04-12 | Stanley Electric Co Ltd | 半導体発光装置 |
WO2008081794A1 (ja) * | 2006-12-28 | 2008-07-10 | Nichia Corporation | 発光装置およびその製造方法 |
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2009
- 2009-06-08 JP JP2009137074A patent/JP5402264B2/ja not_active Expired - Fee Related
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JP2010283261A (ja) | 2010-12-16 |
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