JP5398912B2 - 低電圧降下閉ループ単方向電子バルブ - Google Patents
低電圧降下閉ループ単方向電子バルブ Download PDFInfo
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- JP5398912B2 JP5398912B2 JP2012519559A JP2012519559A JP5398912B2 JP 5398912 B2 JP5398912 B2 JP 5398912B2 JP 2012519559 A JP2012519559 A JP 2012519559A JP 2012519559 A JP2012519559 A JP 2012519559A JP 5398912 B2 JP5398912 B2 JP 5398912B2
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- 230000004913 activation Effects 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 14
- 230000004044 response Effects 0.000 claims description 13
- 230000005669 field effect Effects 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 description 13
- 238000010586 diagram Methods 0.000 description 7
- 230000000903 blocking effect Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 239000003985 ceramic capacitor Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000009499 grossing Methods 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/06—Modifications for ensuring a fully conducting state
- H03K17/063—Modifications for ensuring a fully conducting state in field-effect transistor switches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02021—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J7/00—Circuit arrangements for charging or depolarising batteries or for supplying loads from batteries
- H02J7/34—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering
- H02J7/35—Parallel operation in networks using both storage and other dc sources, e.g. providing buffering with light sensitive cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Electromagnetism (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
- Photovoltaic Devices (AREA)
- Electronic Switches (AREA)
Description
添付図面において:
第2NMOSFET320のソースは第3NMOSFET320のドレインに接続される。第3NMOSFET320のソースは第4NMOSFET320のドレインに接続される。第4NMOSFET320のソースは第5NMOSFET320のドレインに接続される。第5NMOSFET320のソースは第6NMOSFET320のドレインに接続される。第6NMOSFET320のドレインは共通電位ノードに接続される。代表的実施例において、NMOSFET320はそれぞれしきい値より低い電流が供給される。限定されない一の実施例ではNMOSFET320及びレジスタ310を流れるしきい値より低い電流の組合せは250μAより少ない。
Claims (10)
- 第1端子と、
第2端子と、
前記第1端子及び前記第2端子の間に結合される第1電子制御スイッチと、
前記第1端子の電位が前記第2端子の電位より第一値だけ高い場合に前記第1電子制御スイッチを閉じるように配置される第1電荷ポンプと、
前記第1電子制御スイッチと並列に結合され、前記第1端子の電位が前記第2端子の電位より、前記第一値より大きい第二値だけ高い場合に、前記第1端子から前記第2端子へ電流の流れを許容するように配置されるバイパス素子と、
前記第1端子に結合され、前記第二値だけ前記第2端子の電位より高い前記第1端子の前記電位に応答して前記第1電荷ポンプへ初期電力を供給するように配置された起動ユニットと、を含み、
前記第2端子の電位より前記第一値だけ高い前記第1端子の前記電位を継続して維持するように、前記第1電荷ポンプは前記第1電子制御スイッチと閉ループに配置されることを特徴とする低電圧降下単方向電子バルブ。 - 前記第1電子制御スイッチは、前記バイパス素子であるボディダイオードを示す金属酸化膜半導体電界効果トランジスタから構成されることを特徴とする請求項1に記載の低電圧降下単方向電子バルブ。
- 前記起動ユニットは、
前記第二値だけ前記第2端子の電位より高い前記第1端子の前記電位に応答して動作するオシレータと、
前記オシレータに応答する第2電荷ポンプと、
前記第2電荷ポンプに応答する第2電子制御スイッチを含み、
前記第2電荷ポンプが動作中に前記第2端子を内部コモンノードへ結合するように前記第2電子制御スイッチが配置されることを特徴とする請求項1に記載の低電圧降下単方向電子バルブ。 - 前記起動ユニットは、
前記第1電荷ポンプへ初期電力を供給するように配置され、前記オシレータに応答して動作する第3電荷ポンプをさらに含むことを特徴とする請求項3に記載の低電圧降下単方向電子バルブ。 - 前記起動ユニットは、
前記オシレータ及び前記第2端子間に結合され、前記オシレータのための初期帰還路を設けるように配置される単方向バルブ回路をさらに含むことを特徴とする請求項4に記載の低電圧降下単方向電子バルブ。 - 前記第1電荷ポンプの出力と前記第1電荷ポンプの電力入力との間に結合されるブートストラップ回路をさらに含む請求項5に記載の低電圧降下単方向電子バルブ。
- 前記第2端子と前記内部コモンノードとの間に接続され、前記ブートストラップ回路に応答する第3電子制御スイッチをさらに含む請求項5に記載の低電圧降下単方向電子バルブ。
- 前記起動ユニットは、
前記オシレータに応答して動作し、前記第1電荷ポンプへ前記初期電力を供給するように配置される第3電荷ポンプをさらに含むことを特徴とする請求項1に記載の低電圧降下単方向電子バルブ。 - 低電圧降下単方向電流の流れを可能にする方法であって、該方法は、
第1端子と第2端子との間に結合される電子制御スイッチを設け、
前記第1端子の電位が前記第2端子の電位より第一値だけ高い場合に前記設けられた電子制御スイッチを閉じ、
前記第2端子の電位より前記第一値より小さい第二値だけ高い前記第1端子の電位を継続して維持し、
第1電荷ポンプを設け、
前記設けられた電子制御スイッチに並列に結合され、第1端子の電位が第2端子の電位より前記第一値だけ高い場合に第1の端子から第2の端子へ電流の流れを許容するように配置されるバイパス素子を設け、及び
前記第2端子より前記第一値だけ高い前記第1端子の前記電位に応答して前記設けられた第1電荷ポンプへ初期電力を供給する、ことを含み、
前記継続して維持することは前記設けられた第1電荷ポンプに応答する方法。 - 前記第2端子を内部コモンノードへ結合することをさらに含む請求項9に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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US22423809P | 2009-07-09 | 2009-07-09 | |
US61/224,238 | 2009-07-09 | ||
PCT/US2010/038583 WO2011005424A1 (en) | 2009-07-09 | 2010-06-15 | Low voltage drop closed loop unidirectional electronic valve |
Publications (2)
Publication Number | Publication Date |
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JP2012533217A JP2012533217A (ja) | 2012-12-20 |
JP5398912B2 true JP5398912B2 (ja) | 2014-01-29 |
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Application Number | Title | Priority Date | Filing Date |
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JP2012519559A Active JP5398912B2 (ja) | 2009-07-09 | 2010-06-15 | 低電圧降下閉ループ単方向電子バルブ |
Country Status (5)
Country | Link |
---|---|
US (1) | US8169252B2 (ja) |
EP (1) | EP2452363A1 (ja) |
JP (1) | JP5398912B2 (ja) |
CN (1) | CN102473740B (ja) |
WO (1) | WO2011005424A1 (ja) |
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- 2010-06-15 EP EP10733063A patent/EP2452363A1/en not_active Withdrawn
- 2010-06-15 WO PCT/US2010/038583 patent/WO2011005424A1/en active Application Filing
- 2010-06-15 CN CN201080031922.9A patent/CN102473740B/zh active Active
- 2010-06-15 US US12/815,496 patent/US8169252B2/en active Active
- 2010-06-15 JP JP2012519559A patent/JP5398912B2/ja active Active
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Publication number | Publication date |
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JP2012533217A (ja) | 2012-12-20 |
US8169252B2 (en) | 2012-05-01 |
WO2011005424A1 (en) | 2011-01-13 |
US20110006232A1 (en) | 2011-01-13 |
EP2452363A1 (en) | 2012-05-16 |
CN102473740A (zh) | 2012-05-23 |
CN102473740B (zh) | 2015-04-08 |
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