JP5388760B2 - Photoelectric conversion device, photoelectric conversion element storage package, and photoelectric conversion module - Google Patents

Photoelectric conversion device, photoelectric conversion element storage package, and photoelectric conversion module Download PDF

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JP5388760B2
JP5388760B2 JP2009198429A JP2009198429A JP5388760B2 JP 5388760 B2 JP5388760 B2 JP 5388760B2 JP 2009198429 A JP2009198429 A JP 2009198429A JP 2009198429 A JP2009198429 A JP 2009198429A JP 5388760 B2 JP5388760 B2 JP 5388760B2
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photoelectric conversion
conversion element
substrate
frame body
frame
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JP2011049470A (en
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義明 植田
真二 中本
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Kyocera Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/52—PV systems with concentrators

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  • Light Receiving Elements (AREA)

Description

本発明は、光電変換装置、光電変換素子収納用パッケージ、並びにその光電変換装置を用いる光電変換モジュールに関する。   The present invention relates to a photoelectric conversion device, a photoelectric conversion element storage package, and a photoelectric conversion module using the photoelectric conversion device.

近年、光電変換素子を有する光電変換装置の開発が進められている。例示的な光電変換装置としては、太陽エネルギーを電力に変換する太陽電池装置がある。特に、発電効率の向上を目的として、集光型の太陽電池装置の開発が進められている。この太陽電池装置の場合、光電変換素子は、太陽エネルギーを電力に変換する太陽電池素子である。集光された太陽光を効率良く太陽電池素子に照射する構造が開示されている。（例えば、特許文献１参照）。   In recent years, development of a photoelectric conversion device having a photoelectric conversion element has been advanced. As an exemplary photoelectric conversion device, there is a solar cell device that converts solar energy into electric power. In particular, for the purpose of improving the power generation efficiency, a concentrating solar cell device is being developed. In the case of this solar cell device, the photoelectric conversion element is a solar cell element that converts solar energy into electric power. A structure for efficiently irradiating condensed solar light onto a solar cell element is disclosed. (For example, refer to Patent Document 1).

上記特許文献１で提案されている太陽電池装置は、光電変換する太陽電池素子を搭載するレシーバ基板と、レシーバ基板上の太陽電池素子を取り囲むように設けられ、太陽光を反射して太陽電池素子へ導光する反射面を有する反射部材と、反射部材で取り囲まれた空間を樹脂で充填した樹脂封止部と、を含んで構成されている。   The solar cell device proposed in Patent Document 1 is provided so as to surround a solar cell element on a receiver substrate on which a solar cell element for photoelectric conversion is mounted, and reflects solar light so as to reflect the solar cell element. A reflecting member having a reflecting surface that guides light to the surface, and a resin sealing portion that fills a space surrounded by the reflecting member with resin.

特開２００９−８１２７８号公報JP 2009-81278 A

ところで、上記特許文献１で提案された太陽電池装置の構造では、太陽光は、太陽電池素子を封止している樹脂封止部を透過して太陽電池素子に照射されるため、太陽光が樹脂封止部で減衰してしまう。その結果として、太陽電池素子の集光効率が低下する。   By the way, in the structure of the solar cell device proposed in Patent Document 1, sunlight passes through the resin sealing portion that seals the solar cell element and is irradiated to the solar cell element. It attenuates at the resin sealing part. As a result, the light collection efficiency of the solar cell element is reduced.

本発明は、上記課題に鑑みてなされたものであり、集光性に優れた光電変換装置、光電変換素子収納用パッケージ及び光電変換モジュールを提供することを目的とする。   This invention is made | formed in view of the said subject, and it aims at providing the photoelectric conversion apparatus excellent in the condensing property, the package for photoelectric conversion element accommodation, and a photoelectric conversion module.

上記課題を解決するために、本発明の第１の態様に係る光電変換装置は、基板と、前記基板上に設けられる光電変換素子と、前記基板上の前記光電変換素子を取り囲むように設けられ、上面から内壁面にかけて切り欠いた段差を有する枠体と、前記枠体の全周にわたって接合されるとともに、上部よりも下部が幅狭であって、前記光電変換素子の上方に空間を介して、側面が前記枠体の前記段差に接合された集光部材と、を備えたことを特徴と
する。

In order to solve the above problems, a photoelectric conversion device according to a first aspect of the present invention is provided so as to surround a substrate, a photoelectric conversion element provided on the substrate, and the photoelectric conversion element on the substrate. a frame body that have a level difference notched over the inner wall surface from the upper surface, while being joined over the entire periphery of the frame body, a lower portion narrower than the upper, the space above the photoelectric conversion element through it, characterized in that the side surface is provided with a light collecting member bonded to the step of the frame.

また、本発明の第２の様態に係る光電変換素子収納用パッケージは、光電変換素子が搭載される搭載部を有した基板と、前記基板上に前記搭載部を取り囲むように設けられ、上面から内壁面にかけて切り欠いた段差を有する枠体と、前記枠体の全周にわたって接合されるとともに、上部よりも下部が幅狭であって、前記光電変換素子の搭載予定位置よりも上方位置に、側面が前記枠体の前記段差に接合された集光部材と、を備えたことを特徴とする。 The second photoelectric conversion element storage package according to an aspect of the present invention includes a substrate photoelectric conversion element having a mounting portion to be mounted is provided so as to surround the mounting portion on the substrate, a top surface a frame body that have a level difference notched over the inner wall surface, while being joined over the entire periphery of the frame body, a lower portion narrower than the upper, upper position than mounting expected position of the photoelectric conversion element And a light collecting member having a side surface joined to the step of the frame .

また、本発明の第３の様態に係る光電変換モジュールは、前記光電変換装置と、前記光電変換装置上に設けられる受光部材と、を備えたことを特徴とする。   A photoelectric conversion module according to a third aspect of the present invention includes the photoelectric conversion device and a light receiving member provided on the photoelectric conversion device.

本発明は、集光性に優れた光電変換装置、光電変換素子収納用パッケージ及び光電変換モジュールを提供することを目的とする。   An object of this invention is to provide the photoelectric conversion apparatus excellent in condensing property, the package for photoelectric conversion element accommodation, and a photoelectric conversion module.

第１実施形態に係る光電変換モジュールの概観を示す分解斜視図である。It is a disassembled perspective view which shows the external appearance of the photoelectric conversion module which concerns on 1st Embodiment. 第１実施形態に係る光電変換装置の断面図である。It is sectional drawing of the photoelectric conversion apparatus which concerns on 1st Embodiment. 第１実施形態に係る光電変換装置の分解図であって、図３（Ａ）は、集光部材である。また、図３（Ｂ）は、光電変換装置の内部構造である。また、図３（Ｃ）は、光電変換装置の全体図である。FIG. 3A is an exploded view of the photoelectric conversion device according to the first embodiment, and FIG. 3A is a light collecting member. FIG. 3B illustrates an internal structure of the photoelectric conversion device. FIG. 3C is an overall view of the photoelectric conversion device. 第１実施形態に係る他の光電変換装置の分解図であって、図４（Ａ）は、集光部材である。また、図４（Ｂ）は、光電変換装置の内部構造である。図４（Ｃ）は、光電変換装置の全体図である。It is an exploded view of the other photoelectric conversion apparatus which concerns on 1st Embodiment, Comprising: FIG. 4 (A) is a condensing member. FIG. 4B illustrates an internal structure of the photoelectric conversion device. FIG. 4C is an overall view of the photoelectric conversion device. 第１実施形態の変形例１に係る光電変換装置の断面図である。It is sectional drawing of the photoelectric conversion apparatus which concerns on the modification 1 of 1st Embodiment. 第１実施形態の変形例２に係る光電変換装置の断面図である。It is sectional drawing of the photoelectric conversion apparatus which concerns on the modification 2 of 1st Embodiment. 第１実施形態の変形例３に係る光電変換装置の断面図である。It is sectional drawing of the photoelectric conversion apparatus which concerns on the modification 3 of 1st Embodiment. 第２実施形態に係る光電変換装置の断面図である。It is sectional drawing of the photoelectric conversion apparatus which concerns on 2nd Embodiment. 第２実施形態の変形例に係る光電変換装置の断面図である。It is sectional drawing of the photoelectric conversion apparatus which concerns on the modification of 2nd Embodiment.

以下、本発明の一実施形態に係る光電変換モジュール、光電変換装置及び光電変換素子収納用パッケージについて、図面を参照しながら説明する。   Hereinafter, a photoelectric conversion module, a photoelectric conversion device, and a photoelectric conversion element storage package according to an embodiment of the present invention will be described with reference to the drawings.

＜第１実施形態＞
＜光電変換モジュールの構成＞
図１は、本発明の一実施形態に係る光電変換モジュール１の概観斜視図である。また、図２は、図１に示す光電変換装置２の内部構造を示す断面図及び後述する枠体と集光部材との接合部の拡大図である。また、図３は、光電変換装置２の分解図であって、図３（Ａ）は、光を光電変換素子に導く集光部材である。また、図３（Ｂ）は、枠体によって取り囲まれた光電変換素子の配置状態を示す光電変換装置の内部構造である。また、図３（Ｃ）は、集光部材が枠体に接合された光電変換装置の全体図である。 <First Embodiment>
<Configuration of photoelectric conversion module>
FIG. 1 is a schematic perspective view of a photoelectric conversion module 1 according to an embodiment of the present invention. FIG. 2 is a cross-sectional view showing the internal structure of the photoelectric conversion device 2 shown in FIG. 1 and an enlarged view of a joint portion between a frame and a condensing member, which will be described later. 3 is an exploded view of the photoelectric conversion device 2, and FIG. 3A is a light collecting member that guides light to the photoelectric conversion element. FIG. 3B illustrates the internal structure of the photoelectric conversion device, showing an arrangement state of photoelectric conversion elements surrounded by a frame. FIG. 3C is an overall view of the photoelectric conversion device in which the light collecting member is joined to the frame.

本実施形態に係る光電変換モジュール１は、太陽光エネルギーを電力に変換する太陽光発電モジュールである。また、本実施形態に係る光電変換装置２は、光エネルギーを電力に変換する光電変換素子７を含んでいる。かかる光電変換素子７は、例えば、太陽光エネルギーを電力に変換する機能を備えている太陽電池素子である。   The photoelectric conversion module 1 according to the present embodiment is a solar power generation module that converts solar energy into electric power. In addition, the photoelectric conversion device 2 according to the present embodiment includes a photoelectric conversion element 7 that converts light energy into electric power. For example, the photoelectric conversion element 7 is a solar cell element having a function of converting solar energy into electric power.

光電変換モジュール１は、複数の光電変換装置２と、複数の光電変換装置２の上方に設けられた受光部材３と外部基板４を含んで構成される。受光部材３は、例えば、ドーム状のフレネルレンズであり、例えば、アクリル樹脂等の光学特性に優れた樹脂材料からなる。複数の光電変換装置２は、外部基板４に実装されている。受光部材３は、外部基板４に固定されており、複数の光電変換装置２を覆っている。   The photoelectric conversion module 1 includes a plurality of photoelectric conversion devices 2, a light receiving member 3 and an external substrate 4 provided above the plurality of photoelectric conversion devices 2. The light receiving member 3 is, for example, a dome-shaped Fresnel lens, and is made of, for example, a resin material having excellent optical characteristics such as acrylic resin. The plurality of photoelectric conversion devices 2 are mounted on the external substrate 4. The light receiving member 3 is fixed to the external substrate 4 and covers the plurality of photoelectric conversion devices 2.

また、外部基板４は、光電変換装置から発せられる熱を放散させる機能を備えている。外部基板４は、例えば、アルミニウム、銅、炭素−金属複合材等の金属材料である。なお、外部基板４の熱伝導率は、例えば１０Ｗ／（ｍ・Ｋ）以上２５０Ｗ／（ｍ・Ｋ）以下に設定されている。   The external substrate 4 has a function of radiating heat generated from the photoelectric conversion device. The external substrate 4 is, for example, a metal material such as aluminum, copper, or a carbon-metal composite material. The thermal conductivity of the external substrate 4 is set to, for example, 10 W / (m · K) or more and 250 W / (m · K) or less.

受光部材３に入射された光は、光電変換装置２の集光部材８の上端部に集められる。すなわち、集光部材８は、受光部材３によって集められた光を光電変換素子７に導くという機能を備えている。集光部材８に入射された光は、集光部材８で反射を繰り返しながら集光部材８の上端部から下端部へ進み、集光部材８の下端部から光電変換素子７の上面に入射される。そして、光電変換素子７は、光エネルギーを電力に変換する。   The light incident on the light receiving member 3 is collected at the upper end of the light collecting member 8 of the photoelectric conversion device 2. That is, the condensing member 8 has a function of guiding the light collected by the light receiving member 3 to the photoelectric conversion element 7. The light incident on the condensing member 8 proceeds from the upper end to the lower end of the condensing member 8 while being repeatedly reflected by the condensing member 8, and is incident on the upper surface of the photoelectric conversion element 7 from the lower end of the condensing member 8. The The photoelectric conversion element 7 converts light energy into electric power.

光電変換装置２は、図２に示すように、基板５と、基板５上に設けられる光電変換素子７と、基板５上の光電変換素子７を取り囲むように設けられる枠体６と、枠体６の全周にわたって接合されるとともに、光電変換素子７の上方に光電変換素子７と空間ＳＰを介して設けられる集光部材８と、を備えている。なお、枠体６は、基板５を環状に取り囲むように形成されている。   As shown in FIG. 2, the photoelectric conversion device 2 includes a substrate 5, a photoelectric conversion element 7 provided on the substrate 5, a frame 6 provided so as to surround the photoelectric conversion element 7 on the substrate 5, and a frame 6 and a condensing member 8 provided above the photoelectric conversion element 7 via the photoelectric conversion element 7 and the space SP. The frame 6 is formed so as to surround the substrate 5 in an annular shape.

基板５は、平面視したときに円形状に形成された部材である。また、枠体６は、平面視したときに円形状に形成された部材である。基板５又は枠体６の平面視したときの形状は、円形状に限らず、四角形状等の形状にすることができる。なお、枠体６の形状は、接合される集光部材８の形状に合わせて形成されることが好ましい。   The board | substrate 5 is a member formed in circular shape when planarly viewed. The frame body 6 is a member formed in a circular shape when viewed in plan. The shape of the substrate 5 or the frame 6 when viewed in plan is not limited to a circular shape, and may be a square shape or the like. In addition, it is preferable that the shape of the frame 6 is formed according to the shape of the condensing member 8 to be joined.

基板５と枠体６は、例えば、酸化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化アルミニウム質焼結体、窒化珪素質焼結体又はガラスセラミック等のセラミックス、銅、鉄、タングステン、モリブデン、ニッケル又はコバルト等の金属材料或いはこれらの金属材料を含有する合金、ガラスエポキシ、アクリル又はエポキシ等の樹脂材料からなる。   The substrate 5 and the frame 6 are made of, for example, an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, a ceramic such as a glass ceramic, It consists of resin materials, such as metal materials, such as copper, iron, tungsten, molybdenum, nickel, or cobalt, the alloy containing these metal materials, glass epoxy, an acryl, or an epoxy.

また、基板５上には、第１の導電パターン９ａ及び第２の導電パターン９ｂが形成される。第１の導電パターン９ａ及び第２の導電パターン９ｂは、例えば、タングステン、モリブデン又はマンガン等の金属材料からなり、スクリーン印刷法、蒸着法又はスパッタ法等の薄膜形成技術を用いて形成される。   In addition, a first conductive pattern 9 a and a second conductive pattern 9 b are formed on the substrate 5. The first conductive pattern 9a and the second conductive pattern 9b are made of a metal material such as tungsten, molybdenum, or manganese, and are formed using a thin film forming technique such as a screen printing method, a vapor deposition method, or a sputtering method.

また、枠体６は、集光部材８を支持する機能を備える。すなわち、枠体６は、枠体６の上面から枠体６の全周にわたって傾斜面を有する支持部１１を有している。支持部１１の傾斜の形状は、集光部材８の傾斜の形状に合わせて形成される。尚、支持部１１の傾斜の形状と集光部材８の傾斜の形状、すなわち、断面視したときの支持部１１と集光部材８の傾斜角が、略一致することが好ましい。集光部材８との接合のために、メタライズ層１２が、枠体６の支持部１１の傾斜面に形成されている。接合部材１３を介して、支持部１１の傾斜部のメタライズ層１２と集光部材８の側面部に設けられた金属薄膜１４が接合される。メタライズ層１２としては、例えば、タングステン、モリブデン又はマンガン等の金属材料が、スクリーン印刷法、蒸着法又はスパッタ法等の薄膜形成技術を用いて形成される。なお、集光部材８の詳細な構成については後述する。   The frame body 6 has a function of supporting the light collecting member 8. That is, the frame body 6 has the support part 11 which has an inclined surface over the perimeter of the frame body 6 from the upper surface of the frame body 6. The inclined shape of the support portion 11 is formed in accordance with the inclined shape of the light collecting member 8. In addition, it is preferable that the inclination shape of the support part 11 and the inclination shape of the condensing member 8, ie, the inclination angle of the support part 11 and the condensing member 8 in a cross-sectional view substantially coincide. A metallized layer 12 is formed on the inclined surface of the support portion 11 of the frame 6 for joining with the light collecting member 8. The metal thin film 14 provided on the side surface portion of the condensing member 8 is joined to the metallized layer 12 of the inclined portion of the support portion 11 via the joining member 13. As the metallized layer 12, for example, a metal material such as tungsten, molybdenum, or manganese is formed by using a thin film forming technique such as a screen printing method, a vapor deposition method, or a sputtering method. The detailed configuration of the light collecting member 8 will be described later.

ここで、基板５と枠体６がセラミックスで形成される場合について、両者が一体化される状態の基板５と枠体６の作製方法について説明する。焼成前の未硬化の基板５上に、例えば、蒸着法、スクリーン印刷法又はスパッタ法等の薄膜形成技術を用いて、第１の導電パターン９ａ及び第２の導電パターン９ｂを形成する。また、焼成前の未硬化の枠体６の傾斜部に、例えば、蒸着法、スクリーン印刷法又はスパッタ法等の薄膜形成技術を用いて、集光部材８との接合のためのメタライズ層１２を形成する。そして、焼成前の未硬化の第１の導電パターン９ａ及び第２の導電パターン９ｂが形成された基板５上に、焼成前の未硬化の枠体６を圧着して、両者を同時に焼成する。このようにして、焼成後に、基板５と枠体６が一体化される。   Here, in the case where the substrate 5 and the frame body 6 are formed of ceramics, a manufacturing method of the substrate 5 and the frame body 6 in a state in which both are integrated will be described. The first conductive pattern 9a and the second conductive pattern 9b are formed on the uncured substrate 5 before firing by using a thin film forming technique such as vapor deposition, screen printing, or sputtering. Further, a metallized layer 12 for bonding to the light collecting member 8 is formed on the inclined portion of the uncured frame 6 before firing using a thin film forming technique such as vapor deposition, screen printing, or sputtering. Form. Then, the uncured frame body 6 before firing is pressure-bonded onto the substrate 5 on which the uncured first conductive pattern 9a and the second conductive pattern 9b before firing are formed, and both are fired simultaneously. In this way, the substrate 5 and the frame 6 are integrated after firing.

光電変換素子７は、例えば、III−Ｖ族化合物半導体を含んでいる太陽電池素子である。光電変換素子７は、光起電力効果により、受けた光エネルギーを即時に電力に変換して出力することができる。例えば、太陽電池素子は、ＩｎＧａＰ／ＧａＡｓ／Ｇｅ３接合型セルの構造を有している。インジウムガリウムリン（ＩｎＧａＰ）トップセルは、６６０ｎｍ以下の波長領域に含まれる光をエネルギー変換する。ガリウムヒ素（ＧａＡｓ）ミドルセルは、６６０ｎｍから８９０ｎｍまでの波長領域に含まれる光をエネルギー変換する。ゲルマニウム（Ｇｅ）ボトムセルは、８９０ｎｍから２０００ｎｍまでの波長領域に含まれる光をエネルギー変換する。３つのセルは、トンネル接合を介して直列に接続されている。開放電圧は、３つのセルの起電圧の和である。   The photoelectric conversion element 7 is, for example, a solar cell element that includes a III-V group compound semiconductor. The photoelectric conversion element 7 can immediately convert the received light energy into electric power and output it by the photovoltaic effect. For example, the solar cell element has an InGaP / GaAs / Ge3 junction type cell structure. The indium gallium phosphide (InGaP) top cell converts energy contained in a wavelength region of 660 nm or less. The gallium arsenide (GaAs) middle cell converts energy contained in a wavelength region from 660 nm to 890 nm. The germanium (Ge) bottom cell converts light contained in a wavelength region from 890 nm to 2000 nm. The three cells are connected in series via a tunnel junction. The open circuit voltage is the sum of the electromotive voltages of the three cells.

光電変換素子７の下面には、光電変換素子７の下面電極が形成されている。かかる下面電極は、例えば、銀、アルミニウム等により形成され、低融点半田、導電性エポキシ樹脂等の接合材を介して第１の導電パターン９ａと電気的に接続されている。   A lower surface electrode of the photoelectric conversion element 7 is formed on the lower surface of the photoelectric conversion element 7. The lower electrode is made of, for example, silver or aluminum and is electrically connected to the first conductive pattern 9a through a bonding material such as low melting point solder or conductive epoxy resin.

また、光電変換素子７の上面には、光電変換素子７の上面電極が形成されている。かかる上面電極は、例えば、銀、アルミニウム等により形成され、導電性ワイヤで第２の導電パターン９ｂと電気的に接続されている。更に、第１の導電パターン９ａ及び第２の導電パターン９ｂは、接合材を介して第１の出力端子１０ａと第２の出力端子１０ｂに電気的に接続されている。第１の出力端子１０ａ及び第２の出力端子１０ｂは、例えば、鉄−ニッケル−コバルト（Ｆｅ−Ｎｉ−Ｃｏ）合金である。また、接合材としては、例えば、銀−銅ロウ、低融点半田又は導電性エポキシ樹脂等である。   Further, the upper surface electrode of the photoelectric conversion element 7 is formed on the upper surface of the photoelectric conversion element 7. The upper surface electrode is made of, for example, silver, aluminum or the like, and is electrically connected to the second conductive pattern 9b with a conductive wire. Further, the first conductive pattern 9a and the second conductive pattern 9b are electrically connected to the first output terminal 10a and the second output terminal 10b through a bonding material. The first output terminal 10a and the second output terminal 10b are, for example, an iron-nickel-cobalt (Fe—Ni—Co) alloy. The bonding material is, for example, silver-copper solder, low melting point solder, conductive epoxy resin, or the like.

ここで、第１の出力端子１０ａは、負極として機能する。また、第２の出力端子１０ｂは、正極として機能する。そして、光電変換素子７は、第１の出力端子１０ａ及び第２の出力端子１０ｂと電気的に接続されており、第１の出力端子１０ａ及び第２の出力端子１０ｂを介して外部に電気を取り出すことができる。   Here, the first output terminal 10a functions as a negative electrode. The second output terminal 10b functions as a positive electrode. The photoelectric conversion element 7 is electrically connected to the first output terminal 10a and the second output terminal 10b, and electricity is supplied to the outside through the first output terminal 10a and the second output terminal 10b. It can be taken out.

集光部材８は、側面の一周にわたって金属薄膜１４が形成される。尚、金属薄膜１４は、枠体６の支持部１１に相当する位置に蒸着法やスパッタ法等の薄膜形成技術によって形成される。金属薄膜１４は、例えば、チタン、白金、金、クロム、ニッケル、金、銀、銅、或いはそれらの合金等の金属材料である。図２の要部拡大図に示されるように、集光部材８の側面の金属薄膜１４が、接合部材１３を介して、枠体６の支持部１１の傾斜面で接合される。両者は、ロウ接合、半田接合又は樹脂接合等で接合される。また、接合部材１３は、例えば、ロウ材、半田、低融点ガラス又はエポキシ樹脂等からなる。ロウ材としては、例えば、銀−銅ロウ等である。半田としては、金−錫系、金−ゲルマニウム系、錫−鉛系等である。また、低融点ガラスとは、ガラス転移点が６００℃以下程度のガラスのことをいう。   As for the condensing member 8, the metal thin film 14 is formed over the circumference of a side surface. The metal thin film 14 is formed at a position corresponding to the support portion 11 of the frame 6 by a thin film forming technique such as vapor deposition or sputtering. The metal thin film 14 is a metal material such as titanium, platinum, gold, chromium, nickel, gold, silver, copper, or an alloy thereof. As shown in the enlarged view of the main part of FIG. 2, the metal thin film 14 on the side surface of the light collecting member 8 is bonded to the inclined surface of the support portion 11 of the frame body 6 via the bonding member 13. Both are joined by brazing, soldering, resin joining, or the like. The joining member 13 is made of, for example, a brazing material, solder, low-melting glass, epoxy resin, or the like. Examples of the brazing material include silver-copper brazing. Examples of solder include gold-tin, gold-germanium, and tin-lead. The low melting point glass means a glass having a glass transition point of about 600 ° C. or less.

そして、集光部材８は、光電変換素子７の上方に空間を介して設けられる。結果として、光電変換素子７は、基体５と枠体６と集光部材７で囲まれる空間ＳＰに設けられ、気密封止される。   And the condensing member 8 is provided above the photoelectric conversion element 7 through space. As a result, the photoelectric conversion element 7 is provided in a space SP surrounded by the base body 5, the frame body 6, and the light collecting member 7 and hermetically sealed.

また、集光部材８は、透光性を有しており、受光部材３から届いた光を光電変換素子７に導く機能を備えている。集光部材８の透光性とは、光電変換素子７が、太陽電池素子である場合は、太陽光の少なくとも一部の波長領域に含まれる光が透過できることをいう。集光部材８は、例えば、ホウ珪酸ガラスである。   Further, the light collecting member 8 has translucency and has a function of guiding the light reaching from the light receiving member 3 to the photoelectric conversion element 7. The translucency of the condensing member 8 means that when the photoelectric conversion element 7 is a solar cell element, light included in at least a part of the wavelength region of sunlight can be transmitted. The condensing member 8 is, for example, borosilicate glass.

また、集光部材８は、集光プリズムであり、その形状は、集光部材８の上端部から下端部へ光電変換素子７に向かうに従って断面積が小さくなる円錐状である。集光部材８に届いた光は、集光部材８の内部と外部との界面において繰り返し反射される。集光部材８は、光電変換素子７に向かう過程で反射によって断面積内の光エネルギーの強度分布を均等化するという機能を備えている。なお、集光部材８の周囲には、例えば、蒸着法等によって、太陽光を反射する機能を有する反射部材として、金属の薄膜を設けても良い。   The condensing member 8 is a condensing prism, and has a conical shape whose cross-sectional area decreases from the upper end to the lower end of the condensing member 8 toward the photoelectric conversion element 7. The light that reaches the light collecting member 8 is repeatedly reflected at the interface between the inside and the outside of the light collecting member 8. The condensing member 8 has a function of equalizing the intensity distribution of light energy in the cross-sectional area by reflection in the process toward the photoelectric conversion element 7. In addition, you may provide a metal thin film around the condensing member 8 as a reflecting member which has a function which reflects sunlight, for example by a vapor deposition method etc.

また、集光部材８は、光の反射によって断面積内の光エネルギーの強度分布を均等化する機能を有していればよい。図４は、光電変換装置２の分解図であって、図４（Ａ）は、光を光電変換素子７に導く集光部材８、また、図４（Ｂ）は、枠体６によって取り囲まれた光電変換素子７の配置状態を示す光電変換装置２の内部構造、また、図４（Ｃ）は、集光部材８が枠体６に接合された光電変換装置２の全体図である。集光部材８の形状は、図４（Ａ）に示すように、集光部材８の上端部から下端部へ光電変換素子７に向かうに従って断面積が小さくなる角錐状であっても良い。なお、枠体６の形状は、図４（Ｂ）に示すように、集光部材８の形状に合わせて、形成される。   Moreover, the condensing member 8 should just have the function which equalizes the intensity distribution of the light energy in a cross-sectional area by reflection of light. FIG. 4 is an exploded view of the photoelectric conversion device 2. FIG. 4A is surrounded by a light collecting member 8 that guides light to the photoelectric conversion element 7, and FIG. 4B is surrounded by a frame body 6. FIG. 4C is an overall view of the photoelectric conversion device 2 in which the light condensing member 8 is joined to the frame body 6, showing the arrangement state of the photoelectric conversion elements 7. As shown in FIG. 4A, the shape of the light collecting member 8 may be a pyramid shape in which the cross-sectional area decreases from the upper end portion to the lower end portion of the light collecting member 8 toward the photoelectric conversion element 7. In addition, the shape of the frame 6 is formed according to the shape of the condensing member 8, as shown in FIG.

＜光電変換素子収納用パッケージの構成＞
ここで、光電変換素子収納用パッケージについて説明する。光電変換素子収納用パッケージとは、基板５上に光電変換素子７が未搭載の状態である。すなわち、光電変換素子収納用パッケージは、基板５上に光電変換素子７が搭載される搭載部を有した基板５と、基板５上に搭載部を取り囲むように設けられる枠体６と、を備えている。枠体６は、光電変換素子７の搭載予定位置より上方位置に設けられる予定の集光部材８を接合するために、枠体６の内壁側が低くなる方向に傾斜している傾斜面を有している。また、枠体６は、後述するように、枠体６の上面から内壁面にかけて切り欠いた段差を有していても良い。そして、パッケージの基板５上に、例えば、半田や樹脂等の接合材を介して光電変換素子７を搭載し、更に、枠体６の全周にわたって、光電変換素子７の上方に空間を介して集光部材８が設けられる。接合部材１３を介して、枠体６の支持部１１のメタライズ層１２と集光部材８の金属薄膜１４が接合されることにより、集光部材８が設けられた光電変換装置２となる。 <Configuration of photoelectric conversion element storage package>
Here, the photoelectric conversion element storage package will be described. The photoelectric conversion element storage package is a state in which the photoelectric conversion element 7 is not mounted on the substrate 5. That is, the photoelectric conversion element storage package includes a substrate 5 having a mounting portion on which the photoelectric conversion element 7 is mounted on the substrate 5 and a frame body 6 provided on the substrate 5 so as to surround the mounting portion. ing. The frame body 6 has an inclined surface that is inclined in a direction in which the inner wall side of the frame body 6 is lowered in order to join the light collecting member 8 that is to be provided at a position higher than the planned mounting position of the photoelectric conversion element 7. ing. Moreover, the frame 6 may have a level | step difference notched from the upper surface of the frame 6 to the inner wall surface so that it may mention later. Then, for example, the photoelectric conversion element 7 is mounted on the substrate 5 of the package via a bonding material such as solder or resin, and further, over the entire circumference of the frame body 6, the space above the photoelectric conversion element 7 via the space. A condensing member 8 is provided. By joining the metallized layer 12 of the support portion 11 of the frame 6 and the metal thin film 14 of the light collecting member 8 via the bonding member 13, the photoelectric conversion device 2 provided with the light collecting member 8 is obtained.

本実施形態によれば、光電変換素子７が、基板５と枠体６と集光部材８によって形成される内部の空間ＳＰに設けられるため、光電変換素子７が樹脂によって封入されている構造に比較して、光電変換素子７に入射する光が減衰しにくい。その結果、光電変換素子７への入射光量の減少が抑制され、集光効率を向上することができる。   According to this embodiment, since the photoelectric conversion element 7 is provided in the internal space SP formed by the substrate 5, the frame body 6, and the light collecting member 8, the photoelectric conversion element 7 is sealed with a resin. In comparison, the light incident on the photoelectric conversion element 7 is less likely to attenuate. As a result, a decrease in the amount of light incident on the photoelectric conversion element 7 is suppressed, and the light collection efficiency can be improved.

また、光電変換素子７が、基板５と枠体６と集光部材８で形成される内部の空間ＳＰに設けられているため、光電変換素子７に照射された光が、その内部で乱反射した際に、低屈折率の空間ＳＰの空気層や真空層等と光電変換素子７との界面で反射し易くなる。その結果、光電変換素子７の内部で乱反射した光が界面で反射することにより、再び、光電変換素子７の内部から空間ＳＰへ放射されにくくなり、集光効率の低下を抑制することができる。   In addition, since the photoelectric conversion element 7 is provided in the internal space SP formed by the substrate 5, the frame body 6, and the light collecting member 8, the light irradiated to the photoelectric conversion element 7 is irregularly reflected inside. At this time, the light is easily reflected at the interface between the air layer, the vacuum layer, and the like in the low refractive index space SP and the photoelectric conversion element 7. As a result, the light irregularly reflected inside the photoelectric conversion element 7 is reflected at the interface, so that it becomes difficult to radiate again from the inside of the photoelectric conversion element 7 to the space SP, and a reduction in light collection efficiency can be suppressed.

また、集光部材８と枠体６が枠体６の支持部１１のみで接合されることによって、枠体６と集光部材８の接合面積が小さくでき、枠体６から集光部材８への圧縮応力が低減できる。更には、集光部材８と枠体６が、メタライズ層１２とメタライズ層１２の形成領域で形状が規定される接合部材１３で接合されることによって、枠体６から集光部材８への圧縮応力が低減できる。すなわち、集光部材８の屈折率が、圧縮応力によって変化することを抑制することができる。その結果、光電変換素子７への照射光の位置ずれを抑制することができ、集光性を向上することができる。   Further, by joining the light collecting member 8 and the frame body 6 only by the support portion 11 of the frame body 6, the joint area between the frame body 6 and the light collecting member 8 can be reduced, and the frame body 6 to the light collecting member 8. Compressive stress can be reduced. Furthermore, the condensing member 8 and the frame 6 are joined to each other by the joining member 13 whose shape is defined in the formation region of the metallized layer 12 and the metallized layer 12, so that the compression from the frame 6 to the condensing member 8 is performed. Stress can be reduced. That is, it can suppress that the refractive index of the condensing member 8 changes with compressive stress. As a result, the position shift of the irradiation light to the photoelectric conversion element 7 can be suppressed, and the light collecting property can be improved.

また、光電変換素子７が、基板５と枠体６と集光部材８によって形成される内部の空間ＳＰに設けられることによって、光電変換素子７を気密封止することができるため、耐湿性が向上し、光電変換素子７を長期にわたって信頼性良く作動させることができる。   Moreover, since the photoelectric conversion element 7 can be hermetically sealed by being provided in the internal space SP formed by the substrate 5, the frame body 6, and the light collecting member 8, moisture resistance is improved. Thus, the photoelectric conversion element 7 can be operated reliably over a long period of time.

また、集光部材８の側面が、枠体６の支持部１１の傾斜面に嵌め込まれる。そして、集光部材８の側面が枠体６の支持部１１の傾斜面で接合されるため、両者が滑らかに接合され、集光部材８に傷等が付きにくく、両者を良好に接合することができる。その結果、傷等によって光電変換素子に導かれる光の進行方向の変化を抑制することができ、集光性を向上することができる。更に、集光部材８と枠体６の支持部１１の傾斜角を略一致させることにより、集光部材８に傷等がより付きにくくなる。   Further, the side surface of the light collecting member 8 is fitted into the inclined surface of the support portion 11 of the frame body 6. And since the side surface of the condensing member 8 is joined by the inclined surface of the support part 11 of the frame 6, both are smoothly joined, the condensing member 8 is hard to be damaged, and both are joined well. Can do. As a result, a change in the traveling direction of the light guided to the photoelectric conversion element due to scratches or the like can be suppressed, and the light collecting property can be improved. Furthermore, by making the inclination angles of the light collecting member 8 and the support portion 11 of the frame body 6 substantially coincide with each other, the light collecting member 8 is less likely to be damaged.

＜実施形態１の変形例＞
本発明は上述の実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。上記第１実施形態に係る光電変換装置２は、枠体６の一周にわたって内壁縁に傾斜面を有している支持部１１を有し、メタライズ層１２が支持部１１の傾斜面に形成されているが、これに限られない。支持部１１が、段差を有し、メタライズ層１２が段差に形成されていても良い。なお、第１実施形態の変形例に係る光電変換装置のうち、第１実施形態に係る光電変換装置２と同様な部分については、同一の符号を付して適宜説明を省略する。 <Modification of Embodiment 1>
The present invention is not limited to the above-described embodiments, and various changes and improvements can be made without departing from the scope of the present invention. The photoelectric conversion device 2 according to the first embodiment includes a support portion 11 having an inclined surface on the inner wall edge over one circumference of the frame body 6, and the metallized layer 12 is formed on the inclined surface of the support portion 11. However, it is not limited to this. The support part 11 may have a step, and the metallized layer 12 may be formed in the step. In addition, about the photoelectric conversion apparatus which concerns on the modification of 1st Embodiment, about the part similar to the photoelectric conversion apparatus 2 which concerns on 1st Embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted suitably.

＜実施形態１の変形例１＞
図５に示すように、枠体６の一周にわたって内壁縁に形成される支持部１１が段差を有している。集光部材８は、接合部材１３を介して、この支持部１１の段差の角部に突き当てて接合される。そして、支持部１１の段差の角部が、集光部材８を枠体６に固定するためのアライメント機能を更に備えることができる。その結果、集光部材８を枠体６に嵌め込んだ際に、集光部材８の光電変換素子７に対する位置ずれを抑制することができ、光電変換素子７への集光性を向上することができる。 <Modification 1 of Embodiment 1>
As shown in FIG. 5, the support portion 11 formed on the inner wall edge over the circumference of the frame body 6 has a step. The condensing member 8 is abutted and joined to the corner of the step of the support portion 11 via the joining member 13. And the corner | angular part of the level | step difference of the support part 11 can further be provided with the alignment function for fixing the condensing member 8 to the frame 6. FIG. As a result, when the light condensing member 8 is fitted into the frame 6, it is possible to suppress the positional deviation of the light condensing member 8 with respect to the photoelectric conversion element 7, and to improve the light condensing property to the photoelectric conversion element 7. Can do.

＜実施形態１の変形例２＞
図６に示すように、枠体６の一周にわたって内壁縁に形成される支持部１１が段差を有している。尚、図６は、枠体６と集光部材８との接合部を詳細に示し、他の部分は簡略化してある。支持部１１の段差及びその周辺部にメタライズ層１２を設けることにより、枠体６は、接合部材１３を介して、支持部１１の周辺部を含んで集光部材８の金属薄膜１４と接合される。その結果、枠体６と集光部材８の固定が更に強固にできる。例えば、接合部材１３として半田を用いた場合、半田によるフィレットを形成できるので、枠体６と集光部材８との接合がより強固となり接合性を向上することができる。 <Modification 2 of Embodiment 1>
As shown in FIG. 6, the support portion 11 formed on the inner wall edge over the circumference of the frame body 6 has a step. FIG. 6 shows in detail the joint between the frame 6 and the light collecting member 8, and the other parts are simplified. By providing the metallized layer 12 on the step of the support portion 11 and its peripheral portion, the frame 6 is joined to the metal thin film 14 of the light collecting member 8 including the peripheral portion of the support portion 11 via the joining member 13. The As a result, the frame 6 and the light condensing member 8 can be more firmly fixed. For example, when solder is used as the joining member 13, since a fillet made of solder can be formed, the joining between the frame body 6 and the light collecting member 8 becomes stronger and the joining property can be improved.

＜実施形態１の変形例３＞
図７に示すように、枠体６の一周にわたって内壁縁に形成される支持部１１が段差を有している。尚、図７は、枠体６と集光部材８との接合部を詳細に示し、他の部分は簡略化してある。接合部材１３を介して、集光部材８の光電変換素子７と対向する下面の端部が支持部１１と接合される。すなわち、枠体６の支持部１１の段差の平坦部に光電変換素子７と対向する集光部材８の下面の外周端部を当接することにより、接合部材１３を介して、枠体６の支持部１１のメタライズ層１２が集光部材８の金属薄膜１４と接合される。結果として、光電変換素子７から集光部材８の下面までの高さを予め決められた所定の高さに容易に設定することができる。すなわち、枠体６の段差の高さを予め決められた所定の高さにしておくことで、光電変換素子７から集光部材８までの高さを容易に設定することができる。光電変換素子７から集光部材８までの高さは、集光部材８から光電変換素子７へ入射される光を効率良く集光させる点で重要である。また、集光部材８の下面の端部にも金属薄膜１４を形成して、接合部材１３を介して、支持部１１のメタライズ層１２と接合しても良い。 <Modification 3 of Embodiment 1>
As shown in FIG. 7, the support portion 11 formed on the inner wall edge over the circumference of the frame body 6 has a step. FIG. 7 shows in detail the joint between the frame 6 and the light collecting member 8, and the other parts are simplified. The end portion of the lower surface of the light collecting member 8 facing the photoelectric conversion element 7 is joined to the support portion 11 via the joining member 13. That is, by supporting the outer peripheral end of the lower surface of the light collecting member 8 facing the photoelectric conversion element 7 on the flat portion of the step of the support portion 11 of the frame body 6, the frame body 6 is supported via the bonding member 13. The metallized layer 12 of the part 11 is joined to the metal thin film 14 of the light collecting member 8. As a result, the height from the photoelectric conversion element 7 to the lower surface of the condensing member 8 can be easily set to a predetermined height. That is, by setting the height of the step of the frame body 6 to a predetermined height, the height from the photoelectric conversion element 7 to the light collecting member 8 can be easily set. The height from the photoelectric conversion element 7 to the light collecting member 8 is important in that the light incident on the photoelectric conversion element 7 from the light collecting member 8 is efficiently collected. Alternatively, the metal thin film 14 may be formed on the end portion of the lower surface of the light collecting member 8 and bonded to the metallized layer 12 of the support portion 11 via the bonding member 13.

＜光電変換モジュールの製造方法＞
ここで、図１に示す光電変換モジュール１及び図２に示す光電変換装置２の製造方法を説明する。 <Method for producing photoelectric conversion module>
Here, a method for manufacturing the photoelectric conversion module 1 shown in FIG. 1 and the photoelectric conversion device 2 shown in FIG. 2 will be described.

まず、基板５及び枠体６を準備する。基板５及び枠体６が、例えば酸化アルミニウム質焼結体から成る場合、酸化アルミニウム、酸化珪素、酸化マグネシウム及び酸化カルシウム等の原料粉末に、有機バインダー、可塑剤又は溶剤等を添加混合して混合物を得る。   First, the substrate 5 and the frame 6 are prepared. When the substrate 5 and the frame 6 are made of, for example, an aluminum oxide sintered body, an organic binder, a plasticizer, a solvent, or the like is added to and mixed with raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide. Get.

そして、基板５及び枠体６の型枠内に、混合物を充填して乾燥させた後、焼結前の基板５及び枠体６を取り出す。   Then, after filling the molds of the substrate 5 and the frame body 6 with the mixture and drying, the substrate 5 and the frame body 6 before being sintered are taken out.

また、タングステン又はモリブデン等の高融点金属粉末を準備し、この粉末に有機バインダー、可塑剤又は溶剤等を添加混合して金属ペーストを得る。   Moreover, a high melting point metal powder such as tungsten or molybdenum is prepared, and an organic binder, a plasticizer, a solvent, or the like is added to and mixed with the powder to obtain a metal paste.

そして、取り出した焼結前の基板５の上面に対して、例えばスクリーン印刷法を用いて、金属ペーストを塗って、弟１の導電性パターン９ａ及び第２の導電パターン９ｂとなるメタライズ層を形成する。   Then, a metal paste is applied to the upper surface of the unsintered substrate 5 using, for example, a screen printing method to form a metallized layer that becomes the conductive pattern 9a and the second conductive pattern 9b of the younger brother 1. To do.

また、取り出した焼結前の枠体６上部の内壁縁の支持部１１に対して、例えばスクリーン印刷法を用いて、金属ペーストを塗って、集光部材８との接合のためのメタライズ層１２を形成する。   Further, the metallized layer 12 for joining to the light collecting member 8 is applied to the support 11 on the inner wall edge of the upper frame body 6 before being taken out by using, for example, a screen printing method. Form.

さらに、基板５の上面に枠体６を載せて加圧させることで、両者を密着させる。そして、両者を約１６００℃の温度で焼成することにより、基板５と枠体６の一体品を作製することができる。   Further, the frame body 6 is placed on the upper surface of the substrate 5 and pressed to bring the two into close contact. And by baking both at the temperature of about 1600 degreeC, the integrated product of the board | substrate 5 and the frame 6 can be produced.

次に、基板５及び枠体６ｂで囲まれる領域であって、第１の導電パターン９ａ上に、例えば、導電性エポキシ樹脂で光電変換素子７を実装する。そして、第１の導電パターン９ａと光電変換素子７の下面電極とを電気的に接続する。また、第２の導電パターン９ｂから、光電変換素子７の上面電極に対して、導電性ワイヤを介して電気的に接続する。そして、枠体６の支持部１１に半田を介して集光部材８を接合する。このようにして、光電変換装置２を作製することができる。   Next, in a region surrounded by the substrate 5 and the frame body 6b, the photoelectric conversion element 7 is mounted on the first conductive pattern 9a with, for example, a conductive epoxy resin. Then, the first conductive pattern 9a and the lower electrode of the photoelectric conversion element 7 are electrically connected. Further, the second conductive pattern 9b is electrically connected to the upper surface electrode of the photoelectric conversion element 7 through a conductive wire. And the condensing member 8 is joined to the support part 11 of the frame 6 via solder. In this way, the photoelectric conversion device 2 can be manufactured.

次に、光電変換モジュール１の作製方法について説明する。まず、複数個の光電変換装置２と、外部基板４を準備する。ここでは、二つの光電変換装置２の接続方法について説明する。一方の光電変換装置２の第１の出力端子１０ａと他方の光電変換装置２の第２の出力端子１０ｂとが隣り合うように、両者を配置する。そして、配置した二つの光電変換装置２を外部基板４上に設け、接続部材を介して配置した二つの光電変換装置２を接続する。その結果、二つの光電変換装置２を外部基板４に対して固定することができる。   Next, a method for manufacturing the photoelectric conversion module 1 will be described. First, a plurality of photoelectric conversion devices 2 and an external substrate 4 are prepared. Here, a method of connecting the two photoelectric conversion devices 2 will be described. Both are arrange | positioned so that the 1st output terminal 10a of one photoelectric conversion apparatus 2 and the 2nd output terminal 10b of the other photoelectric conversion apparatus 2 may adjoin. Then, the two arranged photoelectric conversion devices 2 are provided on the external substrate 4, and the two arranged photoelectric conversion devices 2 are connected via a connecting member. As a result, the two photoelectric conversion devices 2 can be fixed to the external substrate 4.

このようにして、光電変換装置２を外部基板４に固定することができる。同様にして、複数個の光電変換装置２を外部基板４に配置して固定する。そして、外部基板４に配置した複数個の光電変換装置２上に受光部材３を設けることで、光電変換モジュール１を作製することができる。   In this way, the photoelectric conversion device 2 can be fixed to the external substrate 4. Similarly, a plurality of photoelectric conversion devices 2 are arranged and fixed on the external substrate 4. And the photoelectric conversion module 1 can be produced by providing the light receiving member 3 on the plurality of photoelectric conversion devices 2 arranged on the external substrate 4.

＜実施形態２＞
本第２実施形態に係る光電変換装置では、第１実施形態に係る光電変換装置２と比較して、基板５及び枠体６の構成材料が変更されたものになっている。なお、第２実施形態に係る光電変換装置のうち、第１実施形態に係る光電変換装置２と同様な部分については、同一の符号を付して適宜説明を省略する。 <Embodiment 2>
In the photoelectric conversion device according to the second embodiment, the constituent materials of the substrate 5 and the frame 6 are changed as compared with the photoelectric conversion device 2 according to the first embodiment. In addition, about the photoelectric conversion apparatus which concerns on 2nd Embodiment, about the part similar to the photoelectric conversion apparatus 2 which concerns on 1st Embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted suitably.

図８に示すように、第１実施形態の構造と比較して、基板５と枠体６に追加して第１の台座１５を含んで構成される。   As shown in FIG. 8, as compared with the structure of the first embodiment, the first base 15 is included in addition to the substrate 5 and the frame body 6.

基板５は、銅、鉄、タングステン、モリブデン、ニッケル又はコバルト等の金属材料、或いはこれらの金属材料を含有する合金からなる。枠体６と第１の台座１５は、酸化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化アルミニウム質焼結体、窒化珪素質焼結体又はガラスセラミック等のセラミックスからなる。基板５は、光電変換素子７から発生する熱を効率良く基板５を介して外部に放散させる機能を備えている。なお、基板５の熱伝導率は、例えば１０Ｗ／（ｍ・Ｋ）以上５００Ｗ／（ｍ・Ｋ）以下に設定されている。   The substrate 5 is made of a metal material such as copper, iron, tungsten, molybdenum, nickel, or cobalt, or an alloy containing these metal materials. The frame 6 and the first pedestal 15 are made of ceramics such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, or a glass ceramic. Consists of. The substrate 5 has a function of efficiently dissipating heat generated from the photoelectric conversion element 7 to the outside through the substrate 5. The thermal conductivity of the substrate 5 is set to 10 W / (m · K) or more and 500 W / (m · K) or less, for example.

ここで、基板５と枠体６と台座１５が一体化される状態の作製方法について説明する。焼成前の未硬化の枠体６の上部の内壁縁の支持部１１に、例えば、蒸着法、スクリーン印刷法又はスパッタ法等の薄膜形成技術を用いて、メタライズ層１２を形成する。また、焼成前の未硬化の第１の台座１５に、例えば、蒸着法、スクリーン印刷法又はスパッタ法等の薄膜形成技術を用いて、第１の台座１５上面に第１の導電パターン９ａ及び第２の導電パターン９ｂを形成し、第１の台座１５の下面であって、基板５と第１の台座１５との接合部にメタライズ層を形成する。まず、焼成前の未硬化の第１の導電パターン９ａ及び第２の導電パターン９ｂが形成された第１の台座１５と焼成前の未硬化の枠体６を圧着して、両者を同時に一体焼成する。その後、一体焼成された枠体６と第１の台座１５を、第１の台座１５の下面に形成されたメタライズ層にロウ材を介して、基板５と接合する。そして、基板５と枠体６と第１の台座１５を一体とする。   Here, a manufacturing method in a state where the substrate 5, the frame body 6, and the pedestal 15 are integrated will be described. The metallized layer 12 is formed on the support 11 on the inner wall edge on the upper part of the uncured frame 6 before firing by using a thin film forming technique such as vapor deposition, screen printing, or sputtering. Further, the first conductive pattern 9a and the first conductive pattern 9a on the upper surface of the first pedestal 15 are formed on the uncured first pedestal 15 before firing using, for example, a thin film forming technique such as vapor deposition, screen printing, or sputtering. The second conductive pattern 9 b is formed, and a metallized layer is formed on the lower surface of the first pedestal 15 and at the junction between the substrate 5 and the first pedestal 15. First, the first base 15 on which the uncured first conductive pattern 9a and the second conductive pattern 9b before firing are formed and the uncured frame body 6 before firing are pressure-bonded, and both are integrally fired at the same time. To do. Thereafter, the integrally fired frame 6 and the first pedestal 15 are joined to the substrate 5 via a brazing material on a metallized layer formed on the lower surface of the first pedestal 15. And the board | substrate 5, the frame 6, and the 1st base 15 are united.

光電変換素子７は、基板５と枠体６と第１の台座１５で囲まれる領域であって、例えば、エポキシ、シリコーン、又はガラスエポキシ等の接着材によって基板５上に実装される。そして、光電変換素子７は、導電性ワイヤを介して、第１の導電パターン９ａ及び第２の導電パターン９ｂと電気的に接続される。また、光電変換素子６は、基体５と枠体６と第１の台座１５と集光部材８によって囲まれる空間ＳＰに設けられ、気密封止される。集光部材８は、接合部材１３を介して、枠体６の支持部１１に接合される。   The photoelectric conversion element 7 is an area surrounded by the substrate 5, the frame body 6, and the first pedestal 15, and is mounted on the substrate 5 with an adhesive such as epoxy, silicone, or glass epoxy, for example. The photoelectric conversion element 7 is electrically connected to the first conductive pattern 9a and the second conductive pattern 9b via a conductive wire. The photoelectric conversion element 6 is provided in a space SP surrounded by the base body 5, the frame body 6, the first pedestal 15, and the light collecting member 8 and hermetically sealed. The light collecting member 8 is joined to the support portion 11 of the frame body 6 via the joining member 13.

本実施形態によれば、基板５が、金属材料から構成されることにより、基板５を介して光電変換素子７から発生する熱を効率良く外部に放散することができる。   According to this embodiment, since the substrate 5 is made of a metal material, heat generated from the photoelectric conversion element 7 via the substrate 5 can be efficiently dissipated to the outside.

＜実施形態２の変形例＞
本発明は上述の実施の形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。なお、第２実施形態の変形例に係る光電変換装置のうち、第１実施形態に係る光電変換装置２と同様な部分については、同一の符号を付して適宜説明を省略する。 <Modification of Embodiment 2>
The present invention is not limited to the above-described embodiments, and various changes and improvements can be made without departing from the scope of the present invention. In addition, about the photoelectric conversion apparatus which concerns on the modification of 2nd Embodiment, about the part similar to the photoelectric conversion apparatus 2 which concerns on 1st Embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted suitably.

＜実施形態２の変形例１＞
本変形例に係る光電変換装置では、第２実施形態に係る光電変換装置と比較して、図９に示すように、基板５と枠体６と第１の台座１５に追加して第２の台座１６を含んで構成される。なお、本変形例に係る光電変換装置のうち、第１実施形態に係る光電変換装置２と同様な部分については、同一の符号を付して適宜説明を省略する。 <Modification 1 of Embodiment 2>
In the photoelectric conversion device according to the present modification, as compared with the photoelectric conversion device according to the second embodiment, the second addition to the substrate 5, the frame body 6, and the first pedestal 15, as shown in FIG. 9. The pedestal 16 is included. In addition, about the photoelectric conversion apparatus which concerns on this modification, about the part similar to the photoelectric conversion apparatus 2 which concerns on 1st Embodiment, the same code | symbol is attached | subjected and description is abbreviate | omitted suitably.

基板５と枠体６は、銅、鉄、タングステン、モリブデン、ニッケル又はコバルト等の金属材料、或いはこれらの金属材料を含有する合金からなる。第１の台座１５と第２の台座１６は、酸化アルミニウム質焼結体、ムライト質焼結体、炭化珪素質焼結体、窒化アルミニウム質焼結体、窒化珪素質焼結体又はガラスセラミック等のセラミックスからなる。なお、基板５は、光電変換素子７から発生する熱を効率良く基板５を介して外部に放散させる機能を備えている。なお、基板５と枠体６の熱伝導率は、例えば１０Ｗ／（ｍ・Ｋ）以上５００Ｗ／（ｍ・Ｋ）以下に設定されている。   The board | substrate 5 and the frame 6 consist of metal materials, such as copper, iron, tungsten, molybdenum, nickel, or cobalt, or the alloy containing these metal materials. The first pedestal 15 and the second pedestal 16 are made of an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, a glass ceramic, or the like. Made of ceramics. The substrate 5 has a function of efficiently dissipating heat generated from the photoelectric conversion element 7 to the outside through the substrate 5. The thermal conductivity of the substrate 5 and the frame 6 is set to, for example, 10 W / (m · K) or more and 500 W / (m · K) or less.

ここで、基板６と枠体６と第１の台座１５と第２の台座１６が一体化される状態の作製方法について説明する。焼成前の未硬化の第１の台座１５に、例えば、蒸着法、スクリーン印刷法又はスパッタ法等の薄膜形成技術を用いて、第１の台座１５の上面に第１の導電パターン９ａ及び第２の導電パターン９ｂを形成し、第１の台座１５の下面であって、基板５と第１の台座１５との接合部にメタライズ層を形成する。更に、同様にして、第２の台座１６の上面であって、枠体６との接合部にメタライズ層を形成する。まず、焼成前の未硬化の第１の導電パターン９ａ及び第２の導電パターン９ｂが形成された第１の台座１５と焼成前の未硬化の第２の台座１６とを圧着して、両者を同時に一体焼成し、第１の台座１５と第２の台座１６を一体化する。その後、一体焼成された第１の台座１５の下面のメタライズ層と第２の台座１６の上面のメタライズ層にロウ材を介して基板５と枠体６と接合する。このようにして、基板５と枠体６と第１の台座１５と第２の台座１６を一体とする。   Here, a manufacturing method in a state in which the substrate 6, the frame body 6, the first pedestal 15, and the second pedestal 16 are integrated will be described. The first conductive pattern 9a and the second conductive pattern 9a are formed on the upper surface of the first pedestal 15 on the uncured first pedestal 15 before firing using, for example, a thin film forming technique such as vapor deposition, screen printing, or sputtering. The conductive pattern 9 b is formed, and a metallized layer is formed on the lower surface of the first pedestal 15 and at the junction between the substrate 5 and the first pedestal 15. Further, in the same manner, a metallized layer is formed on the upper surface of the second pedestal 16 and at the junction with the frame body 6. First, the first pedestal 15 on which the uncured first conductive pattern 9a and the second conductive pattern 9b before firing are formed and the uncured second pedestal 16 before firing are pressure-bonded to each other. At the same time, the first pedestal 15 and the second pedestal 16 are integrated. After that, the substrate 5 and the frame body 6 are joined to the metallized layer on the lower surface of the first pedestal 15 and the metallized layer on the upper surface of the second pedestal 16 which are integrally fired through a brazing material. In this way, the substrate 5, the frame body 6, the first pedestal 15, and the second pedestal 16 are integrated.

光電変換素子７は、基板５と枠体６と第１の台座１５と第２の台座１６で囲まれる領域であって、例えば、エポキシ、シリコーン、又はガラスエポキシ等の接着材によって基板５上に実装される。そして、光電変換素子７は、導電性ワイヤを介して、第１の導電パターン９ａ及び第２の導電パターン９ｂに電気的に接続される。また、光電変換素子７は、基板５と枠体６と第１の台座１５と第２の台座１６と集光部材８によって囲まれる空間ＳＰに設けられ、気密封止される。集光部材８が、接合部材１３を介して、枠体６の支持部１１に接合される。   The photoelectric conversion element 7 is an area surrounded by the substrate 5, the frame body 6, the first pedestal 15, and the second pedestal 16. For example, the photoelectric conversion element 7 is formed on the substrate 5 with an adhesive such as epoxy, silicone, or glass epoxy. Implemented. The photoelectric conversion element 7 is electrically connected to the first conductive pattern 9a and the second conductive pattern 9b via a conductive wire. The photoelectric conversion element 7 is provided in a space SP surrounded by the substrate 5, the frame body 6, the first pedestal 15, the second pedestal 16, and the light collecting member 8 and hermetically sealed. The light collecting member 8 is joined to the support portion 11 of the frame body 6 via the joining member 13.

枠体６が金属材料で形成されるため、集光部材８との支持部１１にメタライズ層を新たに形成する必要がなく、製造プロセスを削減することができる。更に、枠体６が、外部への放熱機能を備えているため、枠体６を介して光電変換素子７が発する熱を効果的に外部に放散することができる。   Since the frame 6 is formed of a metal material, it is not necessary to newly form a metallized layer on the support portion 11 with the light collecting member 8, and the manufacturing process can be reduced. Furthermore, since the frame 6 has a function of radiating heat to the outside, the heat generated by the photoelectric conversion element 7 through the frame 6 can be effectively dissipated to the outside.

１ 光電変換モジュール
２ 光電変換装置
３ 受光部材
４ 外部基板
５ 基板
６ 枠体
７ 光電変換素子
８ 集光部材
９ａ 第１の導電パターン
９ｂ 第２の導電パターン
１０ａ 第１の出力端子
１０ｂ 第２の出力端子
１１ 支持部
１２ メタライズ層
１３ 接合部材
１４ 金属薄膜
１５ 第１の台座
１６ 第２の台座
ＳＰ 空間 DESCRIPTION OF SYMBOLS 1 Photoelectric conversion module 2 Photoelectric conversion apparatus 3 Light receiving member 4 External substrate 5 Substrate 6 Frame 7 Photoelectric conversion element 8 Condensing member 9a 1st conductive pattern 9b 2nd conductive pattern 10a 1st output terminal 10b 2nd output Terminal 11 Supporting portion 12 Metallized layer 13 Joining member 14 Metal thin film 15 First pedestal 16 Second pedestal SP Space

Claims (3)

基板と、
前記基板上に設けられる光電変換素子と、
前記基板上の前記光電変換素子を取り囲むように設けられ、上面から内壁面にかけて切り欠いた段差を有する枠体と、
前記枠体の全周にわたって接合されるとともに、上部よりも下部が幅狭であって、前記光電変換素子の上方に空間を介して、側面が前記枠体の前記段差に接合された集光部材と、
を備えたことを特徴とする光電変換装置。 A substrate,
A photoelectric conversion element provided on the substrate;
A frame body provided so as to surround the photoelectric conversion element on the substrate, and having a stepped portion from an upper surface to an inner wall surface ;
Together are joined over the entire periphery of the frame body, a lower portion narrower than the upper, through the space above the photoelectric conversion element, light converging side surfaces is bonded to the step of the frame Members,
A photoelectric conversion device comprising: 光電変換素子が搭載される搭載部を有した基板と、
前記基板上に前記搭載部を取り囲むように設けられ、上面から内壁面にかけて切り欠いた段差を有する枠体と、
前記枠体の全周にわたって接合されるとともに、上部よりも下部が幅狭であって、前記光電変換素子の搭載予定位置よりも上方位置に、側面が前記枠体の前記段差に接合された集光部材と、
を備えたことを特徴とする光電変換素子収納用パッケージ。 A substrate having a mounting portion on which the photoelectric conversion element is mounted;
Provided so as to surround the mounting portion on the substrate, and a frame body that have a level difference notched over the inner wall surface from the upper surface,
It is joined over the entire circumference of the frame body, the lower part is narrower than the upper part , the upper part is positioned above the planned mounting position of the photoelectric conversion element, and the side surface is joined to the step of the frame body. An optical member;
A package for housing a photoelectric conversion element, comprising: 請求項１記載の光電変換装置と、
前記光電変換装置上に設けられる受光部材と、
を備えたことを特徴とする光電変換モジュール。
The photoelectric conversion device according to claim 1;
A light receiving member provided on the photoelectric conversion device;
A photoelectric conversion module comprising:
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