JP5386246B2 - 電力変換装置 - Google Patents
電力変換装置 Download PDFInfo
- Publication number
- JP5386246B2 JP5386246B2 JP2009152180A JP2009152180A JP5386246B2 JP 5386246 B2 JP5386246 B2 JP 5386246B2 JP 2009152180 A JP2009152180 A JP 2009152180A JP 2009152180 A JP2009152180 A JP 2009152180A JP 5386246 B2 JP5386246 B2 JP 5386246B2
- Authority
- JP
- Japan
- Prior art keywords
- switching element
- electrode
- ohmic electrode
- potential
- ohmic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 claims description 72
- 238000006243 chemical reaction Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 33
- 150000004767 nitrides Chemical class 0.000 claims description 26
- 239000011159 matrix material Substances 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 55
- 229910002601 GaN Inorganic materials 0.000 description 53
- 230000005684 electric field Effects 0.000 description 8
- 239000003990 capacitor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 101100112673 Rattus norvegicus Ccnd2 gene Proteins 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 239000011777 magnesium Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000003334 potential effect Effects 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/432—Heterojunction gate for field effect devices
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Junction Field-Effect Transistors (AREA)
- Dc-Dc Converters (AREA)
- Inverter Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
第1の実施形態について図面を参照して説明する。図1は第1の実施形態に係る電力変換器に用いるGaNトランジスタ10の断面構成を示している。図1においては、GaNトランジスタ10をスイッチング動作させるための周辺回路である電源、負荷及びゲート信号源についても合わせて記載している。
以下に第2の実施形態について図面を参照して説明する。図3は、第2の実施形態に係る電力変換装置の回路構成を示している。図3に示すように、第2の実施形態の電力変換装置は、直流電力を三相交流電力に変換するインバータ30である。図3は、一例としてインバータ30により三相モータ149を駆動する場合を示している。インバータ30の第1の入力端子Vin1と第2の入力端子Vin2との間には、直流電源141が接続されている。インバータ30の第1の出力端子Vout1、第2の出力端子Vout2及び第3の出力端子Vout3は、三相モータのU相、V相及びW相とそれぞれ接続されている。
10A 第1のスイッチング素子
10B 第2のスイッチング素子
10C 第3のスイッチング素子
10D 第4のスイッチング素子
10E 第5のスイッチング素子
10F 第6のスイッチング素子
11 基板
12 バッファ層
13 半導体層積層体
13A 第1の活性領域
13B 第2の活性領域
13C 第3の活性領域
13D 第4の活性領域
13E 第5の活性領域
13F 第6の活性領域
13G 不活性領域
14 第1の窒化物半導体層
15 第2の窒化物半導体層
16 第1のオーミック電極
17 第2のオーミック電極
18 ゲート電極
19 p型半導体層
20 裏面電極
21 負荷
22 直流電源
23 ゲート信号源
25 DC−DCコンバータ
30 インバータ
30A 第1のハーフブリッジ
30B 第2のハーフブリッジ
30C 第3のハーフブリッジ
131 直流電源
132 第1のコンデンサ
133 インダクタンス素子
134 第2のコンデンサ
135 ダイオード
137 ゲート駆動回路
139 負荷
141 直流電源
149 三相モータ
151 ゲート駆動回路
152 モータ制御部
161 電源ライン電極
162 接地ライン電極
163 第1の出力電極
164 第2の出力電極
165 第3の出力電極
166 ゲート電極パッド
171 第1のオーミックフィンガー
172 第2のオーミックフィンガー
173 第1のオーミック電極配線
174 第2のオーミック電極配線
175 ゲートフィンガー
176 ゲート電極配線
177 保護膜
Claims (11)
- 電源が接続される入力端子と、
前記電源により供給された電力をスイッチングする第1のスイッチング素子と、
前記第1のスイッチング素子によりスイッチングされた電力を出力する出力端子とを備え、
前記第1のスイッチング素子は、
基板の上に形成された窒化物半導体からなる半導体層積層体と、
前記半導体層積層体の上に形成されたゲート電極と、
前記ゲート電極の両側方にそれぞれ形成された第1のオーミック電極及び第2のオーミック電極と、
前記基板における前記半導体層積層体と反対側の面に形成された裏面電極とを有し、
前記第1のスイッチング素子がオフ状態の場合には、前記第2のオーミック電極と前記裏面電極との間の電位差は、前記第2のオーミック電極と前記第1のオーミック電極との間の電位差よりも小さく、
前記第1のスイッチング素子がオン状態の場合には、前記裏面電極には正電圧のバイアスが印加され、且つ、前記裏面電極の電位は、前記第2のオーミック電極の電位よりも高く、
前記裏面電極の電位は、前記電源により供給されることを特徴とする電力変換装置。 - 前記第1のスイッチング素子がオン状態の場合における前記裏面電極の電位と、前記第1のスイッチング素子がオフ状態の場合における前記裏面電極の電位とは等しいことを特徴とする請求項1に記載の電力変換装置。
- 前記第1のスイッチング素子がオン状態の際にエネルギーを蓄積するインダクタンス素子と、
前記インダクタンス素子と直列に接続されたダイオードとをさらに備え、
前記入力端子に印加された電圧を異なる電圧に変換して前記出力端子から出力するDC−DCコンバータとして機能することを特徴とする請求項1又は2に記載の電力変換装置。 - 前記インダクタンス素子は、前記入力端子と前記第2のオーミック電極との間に接続され、
前記ダイオードは、前記インダクタンス素子と前記第2のオーミック電極との接続ノードと前記出力端子との間に接続され、
前記入力端子に印加された電圧を昇圧して前記出力端子から出力する昇圧型のDC−DCコンバータとして機能することを特徴とする請求項3に記載の電力変換装置。 - 前記裏面電極は、前記出力端子と接続されていることを特徴とする請求項4に記載の電力変換装置。
- 前記裏面電極は、前記入力端子と接続されていることを特徴とする請求項4に記載の電
力変換装置。 - 前記第1のスイッチング素子と前記入力端子との間に接続された第2のスイッチング素子をさらに備え、第1のハーフブリッジとして機能することを特徴とする請求項1又は2に記載の電力変換装置。
- 前記第2のスイッチング素子は、前記第1のスイッチング素子と同一の構造を有し、
前記第1のスイッチング素子の裏面電極及び第2のスイッチング素子の裏面電極は、前記入力端子とそれぞれ接続されていることを特徴とする請求項7に記載の電力変換装置。 - 前記第1のハーフブリッジと並列に接続された第2のハーフブリッジ及び第3のハーフブリッジをさらに備え、
三相モータを駆動するモータ駆動インバータとして機能することを特徴とする請求項7に記載の電力変換装置。 - 前記第2のハーフブリッジは、第3のスイッチング素子及び第4のスイッチング素子を含み、
前記第3のハーフブリッジは、第5のスイッチング素子及び第6のスイッチング素子を含み、
前記第2のスイッチング素子、第3のスイッチング素子、第4のスイッチング素子、第5のスイッチング素子及び第6のスイッチング素子は、それぞれ前記第1のスイッチング素子と同一の構造を有し、
前記第1のスイッチング素子、第2のスイッチング素子、第3のスイッチング素子、第4のスイッチング素子、第5のスイッチング素子及び第6のスイッチング素子の裏面電極は、前記入力端子とそれぞれ接続されていることを特徴とする請求項9に記載の電力変換装置。 - 前記第2のハーフブリッジは、第3のスイッチング素子及び第4のスイッチング素子を含み、
前記第3のハーフブリッジは、第5のスイッチング素子及び第6のスイッチング素子を含み、
前記半導体層積層体は、不活性領域と、それぞれが前記不活性領域に囲まれ2行3列のマトリックス状に配置された活性領域を有し、
前記第1のスイッチング素子、第2のスイッチング素子、第3のスイッチング素子、第4のスイッチング素子、第5のスイッチング素子及び第6のスイッチング素子は、それぞれ異なる活性領域に形成され、
前記第1のスイッチング素子、第3のスイッチング素子及び第5のスイッチング素子の前記第2のオーミック電極は一体に形成され、
前記第2のスイッチング素子、第4のスイッチング素子及び第6のスイッチング素子の前記第1のオーミック電極は一体に形成され、
前記第1のスイッチング素子の前記第1のオーミック電極と、前記第2のスイッチング素子の前記第2のオーミック電極は一体に形成され、
前記第3のスイッチング素子の前記第1のオーミック電極と、前記第4のスイッチング素子の前記第2のオーミック電極は一体に形成され、
前記第5のスイッチング素子の前記第1のオーミック電極と、前記第6のスイッチング素子の前記第2のオーミック電極は一体に形成されていることを特徴とする請求項9に記載の電力変換装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009152180A JP5386246B2 (ja) | 2009-06-26 | 2009-06-26 | 電力変換装置 |
CN201080026948.4A CN102460709B (zh) | 2009-06-26 | 2010-01-06 | 电力变换装置 |
PCT/JP2010/000054 WO2010150427A1 (ja) | 2009-06-26 | 2010-01-06 | 電力変換装置 |
US13/336,621 US8248042B2 (en) | 2009-06-26 | 2011-12-23 | Power converter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009152180A JP5386246B2 (ja) | 2009-06-26 | 2009-06-26 | 電力変換装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011009504A JP2011009504A (ja) | 2011-01-13 |
JP5386246B2 true JP5386246B2 (ja) | 2014-01-15 |
Family
ID=43386218
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009152180A Active JP5386246B2 (ja) | 2009-06-26 | 2009-06-26 | 電力変換装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8248042B2 (ja) |
JP (1) | JP5386246B2 (ja) |
CN (1) | CN102460709B (ja) |
WO (1) | WO2010150427A1 (ja) |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5433214B2 (ja) * | 2007-12-07 | 2014-03-05 | パナソニック株式会社 | モータ駆動回路 |
KR101774933B1 (ko) * | 2010-03-02 | 2017-09-06 | 삼성전자 주식회사 | 듀얼 디플리션을 나타내는 고 전자 이동도 트랜지스터 및 그 제조방법 |
WO2011155295A1 (en) | 2010-06-10 | 2011-12-15 | Semiconductor Energy Laboratory Co., Ltd. | Dc/dc converter, power supply circuit, and semiconductor device |
US8653565B1 (en) * | 2010-08-11 | 2014-02-18 | Sarda Technologies, Inc. | Mixed mode multiple switch integration of multiple compound semiconductor FET devices |
US9236378B2 (en) | 2010-08-11 | 2016-01-12 | Sarda Technologies, Inc. | Integrated switch devices |
US8896034B1 (en) | 2010-08-11 | 2014-11-25 | Sarda Technologies, Inc. | Radio frequency and microwave devices and methods of use |
JP2012175070A (ja) * | 2011-02-24 | 2012-09-10 | Panasonic Corp | 半導体パッケージ |
JP2013038239A (ja) * | 2011-08-09 | 2013-02-21 | Sanken Electric Co Ltd | 窒化物半導体装置 |
JP5653326B2 (ja) * | 2011-09-12 | 2015-01-14 | 株式会社東芝 | 窒化物半導体装置 |
KR20130035024A (ko) * | 2011-09-29 | 2013-04-08 | 삼성전자주식회사 | 고 전자 이동도 트랜지스터 및 그 제조방법 |
JP6003238B2 (ja) * | 2012-05-30 | 2016-10-05 | 住友電気工業株式会社 | 半導体装置 |
JP5763026B2 (ja) * | 2012-09-24 | 2015-08-12 | 株式会社東芝 | 半導体装置 |
JP6161889B2 (ja) * | 2012-10-23 | 2017-07-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP6371309B2 (ja) * | 2012-12-31 | 2018-08-08 | エフィシエント パワー コンヴァーション コーポレーション | 多層化された半導体素子のための寄生インダクタンス削減回路基板レイアウト設計 |
KR20160114498A (ko) * | 2014-01-31 | 2016-10-05 | 르네사스 일렉트로닉스 가부시키가이샤 | 반도체 집적 회로 장치 및 전원 시스템 |
JP6358129B2 (ja) * | 2015-02-26 | 2018-07-18 | 株式会社デンソー | 電力変換装置 |
DE102015208150A1 (de) * | 2015-05-04 | 2016-11-10 | Robert Bosch Gmbh | Verfahren zum Herstellen einer elektronischen Schaltungsvorrichtung und elektronische Schaltungsvorrichtung |
JP6583072B2 (ja) * | 2016-03-15 | 2019-10-02 | 住友電気工業株式会社 | 半導体モジュール |
US9774322B1 (en) | 2016-06-22 | 2017-09-26 | Sarda Technologies, Inc. | Gate driver for depletion-mode transistors |
JP6922175B2 (ja) * | 2016-09-01 | 2021-08-18 | 富士電機株式会社 | 電力変換装置 |
JP7108602B2 (ja) * | 2017-03-31 | 2022-07-28 | パナソニックホールディングス株式会社 | 双方向スイッチ及びそれを備える双方向スイッチ装置 |
JP6440772B2 (ja) * | 2017-05-26 | 2018-12-19 | 三菱電機株式会社 | 電力変換装置 |
US11387790B2 (en) | 2019-01-24 | 2022-07-12 | Analog Devices International Unlimited Company | Power semiconductor device with charge trapping compensation |
JP7280206B2 (ja) * | 2020-01-09 | 2023-05-23 | 株式会社東芝 | 半導体装置 |
US11563409B2 (en) | 2020-10-26 | 2023-01-24 | Analog Devices International Unlimited Company | Configurable non-linear filter for digital pre-distortion |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08140341A (ja) * | 1994-09-16 | 1996-05-31 | Toshiba Corp | スイッチング素子を用いたマイクロ電源装置 |
US5677617A (en) | 1994-09-16 | 1997-10-14 | Kabushiki Kaisha Toshiba | Micro power supply device using switching element |
US5731689A (en) * | 1995-06-06 | 1998-03-24 | Nippondenso Co., Ltd. | Control system for A.C. generator |
JP3752943B2 (ja) * | 2000-01-31 | 2006-03-08 | 株式会社日立製作所 | 半導体素子の駆動装置及びその制御方法 |
JP2001223341A (ja) * | 2000-02-08 | 2001-08-17 | Furukawa Electric Co Ltd:The | 電源装置 |
US6861828B2 (en) | 2000-02-08 | 2005-03-01 | The Furukawa Electric Co., Ltd. | Apparatus and circuit for power supply, and apparatus for controlling large current load |
WO2002082543A1 (en) * | 2001-03-30 | 2002-10-17 | Hitachi, Ltd. | Semiconductor device |
US6768146B2 (en) | 2001-11-27 | 2004-07-27 | The Furukawa Electric Co., Ltd. | III-V nitride semiconductor device, and protection element and power conversion apparatus using the same |
JP4177048B2 (ja) * | 2001-11-27 | 2008-11-05 | 古河電気工業株式会社 | 電力変換装置及びそれに用いるGaN系半導体装置 |
US7262461B1 (en) * | 2002-05-20 | 2007-08-28 | Qspeed Semiconductor Inc. | JFET and MESFET structures for low voltage, high current and high frequency applications |
DE10229633A1 (de) * | 2002-07-02 | 2004-01-29 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Ansteuerung für einen Halbbrückenwechselrichter |
JP4449467B2 (ja) * | 2004-01-28 | 2010-04-14 | サンケン電気株式会社 | 半導体装置 |
JP2005304210A (ja) * | 2004-04-14 | 2005-10-27 | Renesas Technology Corp | 電源ドライバ装置及びスイッチング電源装置 |
JP2006223016A (ja) * | 2005-02-08 | 2006-08-24 | Renesas Technology Corp | 電源システム、マルチチップモジュール、システムインパッケージ、および非絶縁型dc/dcコンバータ |
US7915870B2 (en) * | 2005-09-09 | 2011-03-29 | Semiconductor Components Industries, Llc | Method of forming a current sense circuit and structure therefor |
JP2007208036A (ja) | 2006-02-02 | 2007-08-16 | Sanken Electric Co Ltd | 半導体素子 |
JP2007281551A (ja) * | 2006-04-03 | 2007-10-25 | Sanyo Electric Co Ltd | 化合物半導体スイッチ回路装置 |
TW200807850A (en) * | 2006-07-18 | 2008-02-01 | Richtek Techohnology Corp | Power management device of expanding safe operation region and manipulation method thereof |
JP4432953B2 (ja) * | 2006-09-27 | 2010-03-17 | 株式会社日立製作所 | 半導体電力変換装置 |
JP5300238B2 (ja) * | 2006-12-19 | 2013-09-25 | パナソニック株式会社 | 窒化物半導体装置 |
JP2008258419A (ja) | 2007-04-05 | 2008-10-23 | Toshiba Corp | 窒化物半導体素子 |
US7920396B2 (en) * | 2007-07-13 | 2011-04-05 | National Semiconductor Corporation | Synchronous rectifier and controller for inductive coupling |
-
2009
- 2009-06-26 JP JP2009152180A patent/JP5386246B2/ja active Active
-
2010
- 2010-01-06 CN CN201080026948.4A patent/CN102460709B/zh active Active
- 2010-01-06 WO PCT/JP2010/000054 patent/WO2010150427A1/ja active Application Filing
-
2011
- 2011-12-23 US US13/336,621 patent/US8248042B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US8248042B2 (en) | 2012-08-21 |
US20120099357A1 (en) | 2012-04-26 |
CN102460709B (zh) | 2014-06-18 |
CN102460709A (zh) | 2012-05-16 |
WO2010150427A1 (ja) | 2010-12-29 |
JP2011009504A (ja) | 2011-01-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5386246B2 (ja) | 電力変換装置 | |
JP6277429B2 (ja) | 半導体装置 | |
US8159848B2 (en) | Power conversion circuit | |
JP5433214B2 (ja) | モータ駆動回路 | |
JP6558359B2 (ja) | 半導体装置 | |
JP5666157B2 (ja) | 双方向スイッチ素子及びそれを用いた双方向スイッチ回路 | |
JP5457046B2 (ja) | 半導体装置 | |
JP5632416B2 (ja) | Iii−v族トランジスタとiv族縦型トランジスタを含む積層複合デバイス | |
JP6012671B2 (ja) | 高電圧iv族イナーブルスイッチを備えるモノリシック複合iii族窒化物トランジスタ | |
US20110305054A1 (en) | Bi-directional switch, alternating-current two-wire switch, switching power source circuit, and method of driving bi-directional switch | |
JP2008153748A (ja) | 双方向スイッチ及び双方向スイッチの駆動方法 | |
WO2010021099A1 (ja) | 電界効果トランジスタ | |
WO2011067903A1 (ja) | スイッチ装置 | |
JP2006223016A (ja) | 電源システム、マルチチップモジュール、システムインパッケージ、および非絶縁型dc/dcコンバータ | |
WO2009153965A1 (ja) | 双方向スイッチのゲート駆動方法およびそれを用いた電力変換装置 | |
JP2009159222A (ja) | スイッチ装置 | |
JP6112491B2 (ja) | 半導体装置および電力変換装置 | |
JP2008198735A (ja) | 整流素子を含む複合半導体装置 | |
JP2009164158A (ja) | 半導体装置及びその製造方法 | |
JP2015006125A (ja) | 高電圧iv族イネーブルスイッチを具えるデプレッションモードiii−v族トランジスタ | |
JP2012023268A (ja) | ダイオード | |
JP2009124667A (ja) | 双方向スイッチ及びその駆動方法 | |
JP2009295684A (ja) | 半導体双方向スイッチング装置 | |
JP5316251B2 (ja) | スイッチ回路 | |
JP2015042079A (ja) | ダイオード回路およびdc−dcコンバータ |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120309 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20120309 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130507 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130703 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130723 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130822 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130910 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20131007 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5386246 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |