JP5376951B2 - 光学的に開始されるシリコンカーバイド高電圧スイッチ - Google Patents
光学的に開始されるシリコンカーバイド高電圧スイッチ Download PDFInfo
- Publication number
- JP5376951B2 JP5376951B2 JP2008536623A JP2008536623A JP5376951B2 JP 5376951 B2 JP5376951 B2 JP 5376951B2 JP 2008536623 A JP2008536623 A JP 2008536623A JP 2008536623 A JP2008536623 A JP 2008536623A JP 5376951 B2 JP5376951 B2 JP 5376951B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- electric field
- photoconductive
- sic
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title description 22
- 229910010271 silicon carbide Inorganic materials 0.000 title description 21
- 239000000758 substrate Substances 0.000 claims abstract description 83
- 230000005684 electric field Effects 0.000 claims abstract description 38
- 239000000463 material Substances 0.000 claims abstract description 35
- 230000008859 change Effects 0.000 claims description 24
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000002019 doping agent Substances 0.000 claims description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 239000011810 insulating material Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 239000013078 crystal Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052698 phosphorus Inorganic materials 0.000 claims description 2
- 239000011574 phosphorus Substances 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 5
- 238000000034 method Methods 0.000 description 7
- 230000031700 light absorption Effects 0.000 description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 5
- 239000012212 insulator Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 230000005499 meniscus Effects 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000013590 bulk material Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G15/00—Apparatus for electrographic processes using a charge pattern
- G03G15/02—Apparatus for electrographic processes using a charge pattern for laying down a uniform charge, e.g. for sensitising; Corona discharge devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H7/00—Details of devices of the types covered by groups H05H9/00, H05H11/00, H05H13/00
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Electromagnetism (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
- Electrodes Of Semiconductors (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Description
Claims (10)
- 1.6eV超の、バンドギャップの大きい素材から構成される光伝導基板であって、少なくとも1つの凹部と、光エネルギを光源から受けるために、前記光源に対して光学的に接続可能な切子面とを有する光伝導基板と、
前記基板に対して電気的に接続された2つの電極であって、その少なくとも一方が、前記少なくとも1つの凹部のうちの対応する凹部内に、接触した状態で載置される凸状面を有し、前記基板の両端間に電位をかけるための2つの電極と、
2つの電界変化ライナであって、電界をそれらに沿って段階的に変化させるために、電極接触面を取り囲んで、前記基板上に形成される少なくとも1つの電界変化ライナと、を備え、
前記2つの電界変化ライナは、対向する面である複数の電極接触面のうちの対応する1つを取り囲んで、前記基板上に一体的に形成される2つの電界変化ライナから構成され、
前記2つの電界変化ライナは、前記電極の外周に隣接し、
前記2つの電界変化ライナは、前記電極の前記基板からの境界部分において、電界を段階的に変化させるための、前記少なくとも1つの凹部の縁部を形成し、
前記2つの電界変化ライナは、高誘電率素材である光伝導スイッチ。 - 前記電界変化ライナは、窒化ケイ素を含む請求項1に記載の光伝導スイッチ。
- 前記電界変化ライナは、約1ミクロンの深さで前記基板内に延びる、前記基板のドープサブ表面層として形成される、請求項2に記載の光伝導スイッチ。
- 前記基板は、導体素材および半導体素材から成るグループから選択される分割層によって分離される少なくとも2つの光伝導層を有する多層体である、請求項1に記載の光伝導スイッチ。
- 前記基板は、4h SiC,6h SiCおよびGaNから構成されるグループから選択される補償型半絶縁素材である、請求項1に記載の光伝導スイッチ。
- 前記基板は、結晶構造を有し、そして、A−平面,C−平面およびM−平面から構成されるグループから選択される平面内で切断された半絶縁SiCである、請求項5に記載の光伝導スイッチ。
- 前記基板は、前記C−平面で切断され、そして、相互にずらされている少なくとも2つの層を備える、請求項6に記載の光伝導スイッチ。
- 前記半絶縁素材であるSiCは、以下のドーパント、すなわち、ボロン、バナジウム、窒素、アルミニウム、リン、酸素、タングステンおよび亜鉛のうちの少なくとも1つでドープされている、請求項5に記載の光伝導スイッチ。
- 全内部反射を生み出すために、前記基板の少なくとも1つの切子面に、誘電体がコーティングされる、請求項1に記載の光伝導スイッチ。
- 前記2つの電界変化ライナは、前記基板の電極接触面の高さよりも下のレベルに形成されている、請求項1に記載の光伝導スイッチ。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US73016105P | 2005-10-24 | 2005-10-24 | |
US60/730,161 | 2005-10-24 | ||
US79801606P | 2006-05-04 | 2006-05-04 | |
US60/798,016 | 2006-05-04 | ||
PCT/US2006/041814 WO2007120191A2 (en) | 2005-10-24 | 2006-10-24 | Optically- initiated silicon carbide high voltage switch |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2009513017A JP2009513017A (ja) | 2009-03-26 |
JP2009513017A5 JP2009513017A5 (ja) | 2009-12-24 |
JP5376951B2 true JP5376951B2 (ja) | 2013-12-25 |
Family
ID=38609951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008536623A Expired - Fee Related JP5376951B2 (ja) | 2005-10-24 | 2006-10-24 | 光学的に開始されるシリコンカーバイド高電圧スイッチ |
Country Status (8)
Country | Link |
---|---|
US (2) | US7893541B2 (ja) |
EP (1) | EP1941552A2 (ja) |
JP (1) | JP5376951B2 (ja) |
KR (1) | KR20080059579A (ja) |
CN (1) | CN101390223B (ja) |
AU (1) | AU2006342150A1 (ja) |
CA (1) | CA2626800A1 (ja) |
WO (1) | WO2007120191A2 (ja) |
Families Citing this family (68)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3294045B1 (en) | 2004-07-21 | 2019-03-27 | Mevion Medical Systems, Inc. | A programmable radio frequency waveform generator for a synchrocyclotron |
CA2629333C (en) | 2005-11-18 | 2013-01-22 | Still River Systems Incorporated | Charged particle radiation therapy |
US8003964B2 (en) * | 2007-10-11 | 2011-08-23 | Still River Systems Incorporated | Applying a particle beam to a patient |
US8933650B2 (en) | 2007-11-30 | 2015-01-13 | Mevion Medical Systems, Inc. | Matching a resonant frequency of a resonant cavity to a frequency of an input voltage |
US8581523B2 (en) * | 2007-11-30 | 2013-11-12 | Mevion Medical Systems, Inc. | Interrupted particle source |
JP2011518442A (ja) * | 2008-04-17 | 2011-06-23 | ローレンス リヴァーモア ナショナル セキュリティ,エルエルシー | 光伝導ワイドバンドギャップ半導体を可変抵抗器として用いた電気信号変調システムおよび方法 |
WO2010091142A1 (en) | 2009-02-04 | 2010-08-12 | President And Fellows Of Harvard College | Compositions and methods for labeling and imaging phospholipids |
WO2010121179A1 (en) * | 2009-04-16 | 2010-10-21 | Lawrence Livermore National Security, Llc | Virtual gap dielectric wall accelerator |
WO2010129804A1 (en) | 2009-05-07 | 2010-11-11 | Lawrence Livermore National Security, Llc | Photoconductive switch package |
WO2011007143A1 (en) * | 2009-07-15 | 2011-01-20 | The Secretary Of State For Defence | Optically addressed light valve |
DE102009036418B4 (de) * | 2009-08-06 | 2011-06-22 | Siemens Aktiengesellschaft, 80333 | Wellenleiter, insbesondere beim Dielektrikum-Wand-Beschleuniger |
CN102157597A (zh) * | 2010-02-11 | 2011-08-17 | 中国科学院上海硅酸盐研究所 | 一种光控碳化硅光电导开关 |
US8377806B2 (en) | 2010-04-28 | 2013-02-19 | Cree, Inc. | Method for controlled growth of silicon carbide and structures produced by same |
US9025919B2 (en) * | 2010-06-28 | 2015-05-05 | Lawrence Livermore National Security, Llc | High voltage photo-switch package module having encapsulation with profiled metallized concavities |
US8655125B2 (en) * | 2010-06-28 | 2014-02-18 | Lawrence Livermore National Security, Llc | High voltage photo switch package module |
GB201116780D0 (en) * | 2011-09-29 | 2011-11-09 | Secr Defence | Imaging sensor |
CN103178131B (zh) * | 2011-12-23 | 2016-03-23 | 上海硅酸盐研究所中试基地 | 正对电极结构、SiC光导开关及其它们的制造方法 |
US20130328058A1 (en) * | 2012-06-06 | 2013-12-12 | Scott D. Nelson | Transversely-illuminated high current photoconductive switches with geometry-constrained conductivity path |
WO2014028468A2 (en) * | 2012-08-13 | 2014-02-20 | The Curators Of The University Of Missouri | An optically activated linear switch for radar limiters or high power switching applications |
US10254739B2 (en) | 2012-09-28 | 2019-04-09 | Mevion Medical Systems, Inc. | Coil positioning system |
CN104813747B (zh) | 2012-09-28 | 2018-02-02 | 梅维昂医疗***股份有限公司 | 使用磁场颤振聚焦粒子束 |
US9301384B2 (en) | 2012-09-28 | 2016-03-29 | Mevion Medical Systems, Inc. | Adjusting energy of a particle beam |
US9723705B2 (en) | 2012-09-28 | 2017-08-01 | Mevion Medical Systems, Inc. | Controlling intensity of a particle beam |
WO2014052721A1 (en) | 2012-09-28 | 2014-04-03 | Mevion Medical Systems, Inc. | Control system for a particle accelerator |
TW201424466A (zh) | 2012-09-28 | 2014-06-16 | Mevion Medical Systems Inc | 磁場再生器 |
EP3581243A1 (en) | 2012-09-28 | 2019-12-18 | Mevion Medical Systems, Inc. | Controlling particle therapy |
JP6121544B2 (ja) | 2012-09-28 | 2017-04-26 | メビオン・メディカル・システムズ・インコーポレーテッド | 粒子ビームの集束 |
TW201433331A (zh) | 2012-09-28 | 2014-09-01 | Mevion Medical Systems Inc | 線圈位置調整 |
US20140284451A1 (en) * | 2013-03-15 | 2014-09-25 | Lawrence Livermore National Security, Llc | Reducing localized high electric fields in photoconductive wide bandgap semiconductors |
US9893679B2 (en) | 2013-03-15 | 2018-02-13 | Lawrence Livermore National Security, Llc | High frequency modulation circuits based on photoconductive wide bandgap switches |
US9455366B2 (en) * | 2013-03-15 | 2016-09-27 | Lawrence Livermore National Security, Llc | Sol-gel process for the manufacture of high power switches |
US8791656B1 (en) | 2013-05-31 | 2014-07-29 | Mevion Medical Systems, Inc. | Active return system |
US9500773B2 (en) * | 2013-06-07 | 2016-11-22 | Lawrence Livermore National Security, Llc | High voltage photoconductive switch package |
US9730308B2 (en) | 2013-06-12 | 2017-08-08 | Mevion Medical Systems, Inc. | Particle accelerator that produces charged particles having variable energies |
CN110237447B (zh) | 2013-09-27 | 2021-11-02 | 梅维昂医疗***股份有限公司 | 粒子治疗*** |
US10675487B2 (en) | 2013-12-20 | 2020-06-09 | Mevion Medical Systems, Inc. | Energy degrader enabling high-speed energy switching |
US9962560B2 (en) | 2013-12-20 | 2018-05-08 | Mevion Medical Systems, Inc. | Collimator and energy degrader |
US9661736B2 (en) | 2014-02-20 | 2017-05-23 | Mevion Medical Systems, Inc. | Scanning system for a particle therapy system |
US9950194B2 (en) | 2014-09-09 | 2018-04-24 | Mevion Medical Systems, Inc. | Patient positioning system |
US9935218B2 (en) * | 2015-01-02 | 2018-04-03 | BAE Systems Information and Electronic Systems Integreation Inc. | Generation of flexible high power pulsed waveforms |
CN104701405B (zh) * | 2015-03-05 | 2017-05-17 | 西安电子科技大学 | 碳化硅嵌入式电极异面型光导开关及其制作方法 |
US10786689B2 (en) | 2015-11-10 | 2020-09-29 | Mevion Medical Systems, Inc. | Adaptive aperture |
US10110224B2 (en) | 2016-03-14 | 2018-10-23 | Lawrence Livermore National Security, Llc | Triaxial photoconductive switch module |
US10563739B2 (en) | 2016-03-14 | 2020-02-18 | Lawrence Livermore National Security, Llc | Bi-triaxial photoconductive switch module |
US10447261B1 (en) | 2016-06-23 | 2019-10-15 | Hrl Laboratories, Llc | Dual gate III-switch for high voltage current relay |
US10181544B2 (en) | 2016-07-07 | 2019-01-15 | Lawrence Livermore National Security, Llc | Photoconductive switch package configurations having a profiled resistive element |
WO2018009779A1 (en) | 2016-07-08 | 2018-01-11 | Mevion Medical Systems, Inc. | Treatment planning |
CN106169515A (zh) * | 2016-07-18 | 2016-11-30 | 西安电子科技大学 | 高功率同面电极嵌入式台面型光导开关 |
CN106169514A (zh) * | 2016-07-18 | 2016-11-30 | 西安电子科技大学 | 高功率异面电极嵌入式台面型光导开关及其制作方法 |
WO2018143627A1 (en) | 2017-01-31 | 2018-08-09 | Samsung Electronics Co., Ltd. | High-frequency signal transmission/reception device |
US11103730B2 (en) | 2017-02-23 | 2021-08-31 | Mevion Medical Systems, Inc. | Automated treatment in particle therapy |
US10191353B2 (en) | 2017-03-29 | 2019-01-29 | Lawrence Livermore National Security, Llc | Optically triggered electrical switches with fast recovery based on nonlinear optical response |
CN107369736B (zh) * | 2017-06-20 | 2019-02-19 | 西安电子科技大学 | 一种利用质子辐照制备超快响应GaN光电导开关的方法 |
JP6940676B2 (ja) | 2017-06-30 | 2021-09-29 | メビオン・メディカル・システムズ・インコーポレーテッド | リニアモーターを使用して制御される構成可能コリメータ |
WO2019059932A1 (en) * | 2017-09-22 | 2019-03-28 | Lawrence Livermore National Security, Llc | CHARGE TRAP PHOTOCONDUCTIVE APPARATUS |
US10326038B2 (en) | 2017-11-02 | 2019-06-18 | Lawrence Livermore National Security, Llc | Three-dimensional co-axial linear photonic switch |
WO2020004991A1 (en) * | 2018-06-27 | 2020-01-02 | Samsung Electronics Co., Ltd. | High frequency switch for high frequency signal transmitting/receiving devices |
US11942760B2 (en) | 2018-12-19 | 2024-03-26 | Lawrence Livermore National Security, Llc | High-power electrically tunable switch |
TW202041245A (zh) | 2019-03-08 | 2020-11-16 | 美商美威高能離子醫療系統公司 | 用於粒子治療系統之準直儀及降能器 |
DE102019123088A1 (de) * | 2019-08-28 | 2021-03-04 | TPMT-Tepin Microelectronic Technology Ltd. Co. | Photoschalterstruktur, zugehöriges Herstellungsverfahren sowie Anordnung mit einer Photoschalterstruktur und einer Spannungsquelle |
CN112002769B (zh) * | 2020-08-20 | 2022-10-11 | 上海航天电子通讯设备研究所 | 一种耐高压光导开关及制备方法 |
US11805715B2 (en) | 2020-10-20 | 2023-10-31 | Lawrence Livermore National Security, Llc | Pulse compression photoconductive semiconductor switches |
CN112563345B (zh) * | 2020-12-09 | 2023-04-28 | 西安交通大学 | 一种匀化平面型光导开关电场的外导体电极结构及光导开关器件和方法 |
WO2022146855A1 (en) * | 2020-12-29 | 2022-07-07 | Lawrence Livermore National Security, Llc | Flash radiotherapy accelerator |
CN113054040A (zh) * | 2021-03-05 | 2021-06-29 | 中国科学院苏州纳米技术与纳米仿生研究所 | 用于光导开关的衬底以及具有该衬底的光导开关 |
US11581448B2 (en) | 2021-04-01 | 2023-02-14 | Raytheon Company | Photoconductive semiconductor switch laterally fabricated alongside GaN on Si field effect transistors |
CN113823700B (zh) * | 2021-09-16 | 2024-03-29 | 西安交通大学 | 一种氮化镓光导半导体开关及其制备方法 |
US11996840B1 (en) | 2022-09-09 | 2024-05-28 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Light controlled switch module |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57135954A (en) * | 1981-02-17 | 1982-08-21 | Olympus Optical Co Ltd | Electrophotographic receptor and plural copies electrophotographing method using this receptor |
JPS6142973A (ja) * | 1984-08-06 | 1986-03-01 | Dowa Mining Co Ltd | 近赤外線受光素子 |
JPS62195181A (ja) * | 1986-02-21 | 1987-08-27 | Shimadzu Corp | 半導体放射線検出素子 |
US5140158A (en) * | 1990-10-05 | 1992-08-18 | The United States Of America As Represented By The United States Department Of Energy | Method for discriminative particle selection |
US5341017A (en) | 1993-06-09 | 1994-08-23 | The United States Of America As Represented By The United States Department Of Energy | Semiconductor switch geometry with electric field shaping |
US5449925A (en) * | 1994-05-04 | 1995-09-12 | North Carolina State University | Voltage breakdown resistant monocrystalline silicon carbide semiconductor devices |
US5585648A (en) * | 1995-02-03 | 1996-12-17 | Tischler; Michael A. | High brightness electroluminescent device, emitting in the green to ultraviolet spectrum, and method of making the same |
US6331194B1 (en) * | 1996-06-25 | 2001-12-18 | The United States Of America As Represented By The United States Department Of Energy | Process for manufacturing hollow fused-silica insulator cylinder |
US6107643A (en) * | 1999-03-24 | 2000-08-22 | Abb Ab | Photoconductive switch with doping adapted to the intensity distribution of an illumination source thereof |
EP1286398B1 (en) * | 2000-05-31 | 2006-10-04 | Matsushita Electric Industrial Co., Ltd. | Misfet |
JP3932857B2 (ja) * | 2001-10-22 | 2007-06-20 | 株式会社島津製作所 | 放射線検出装置 |
JP3749498B2 (ja) * | 2002-03-26 | 2006-03-01 | スタンレー電気株式会社 | 結晶成長用基板およびZnO系化合物半導体デバイス |
JP2004047561A (ja) * | 2002-07-09 | 2004-02-12 | Olympus Corp | 光導電スイッチモジュールおよびその製造方法 |
US7737959B2 (en) * | 2005-09-08 | 2010-06-15 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Position detection system using laser speckle |
-
2006
- 2006-10-24 WO PCT/US2006/041814 patent/WO2007120191A2/en active Search and Examination
- 2006-10-24 KR KR1020087009515A patent/KR20080059579A/ko not_active Application Discontinuation
- 2006-10-24 CA CA002626800A patent/CA2626800A1/en not_active Abandoned
- 2006-10-24 JP JP2008536623A patent/JP5376951B2/ja not_active Expired - Fee Related
- 2006-10-24 AU AU2006342150A patent/AU2006342150A1/en not_active Abandoned
- 2006-10-24 EP EP06850537A patent/EP1941552A2/en not_active Withdrawn
- 2006-10-24 US US11/586,468 patent/US7893541B2/en not_active Expired - Fee Related
- 2006-10-24 CN CN2006800489505A patent/CN101390223B/zh not_active Expired - Fee Related
-
2010
- 2010-11-23 US US12/952,949 patent/US8125089B2/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
AU2006342150A1 (en) | 2007-10-25 |
US20110101376A1 (en) | 2011-05-05 |
KR20080059579A (ko) | 2008-06-30 |
WO2007120191A3 (en) | 2008-05-29 |
US8125089B2 (en) | 2012-02-28 |
US20070092812A1 (en) | 2007-04-26 |
CA2626800A1 (en) | 2007-10-25 |
CN101390223B (zh) | 2012-02-01 |
CN101390223A (zh) | 2009-03-18 |
EP1941552A2 (en) | 2008-07-09 |
WO2007120191A2 (en) | 2007-10-25 |
JP2009513017A (ja) | 2009-03-26 |
US7893541B2 (en) | 2011-02-22 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5376951B2 (ja) | 光学的に開始されるシリコンカーバイド高電圧スイッチ | |
US8258632B1 (en) | Optically-initiated silicon carbide high voltage switch with contoured-profile electrode interfaces | |
US9171988B2 (en) | Photoconductive switch package | |
KR100356244B1 (ko) | 전계 방사형 전자원의 제조방법 | |
US10326038B2 (en) | Three-dimensional co-axial linear photonic switch | |
WO2015019797A1 (ja) | 高耐圧半導体装置およびその製造方法 | |
US20120313108A1 (en) | Semiconductor diode | |
JP2019506740A (ja) | ショットキーバリア整流器 | |
JPS61267329A (ja) | InPのパツシベ−シヨン方法および用途 | |
CN115410922A (zh) | 一种垂直型氧化镓晶体管及其制备方法 | |
Caporaso et al. | Optically-initiated silicon carbide high voltage switch | |
RU2702405C1 (ru) | Полупроводниковое устройство | |
US8217495B2 (en) | High-frequency bridge suspended diode | |
USH695H (en) | High energy optically controlled kilovolt semiconductor switch | |
CN105185841A (zh) | 一种场效应二极管及其制作方法 | |
US11996840B1 (en) | Light controlled switch module | |
US20050263752A1 (en) | Thermoelectric material with integrated de broglie wave filter | |
Berdnikov et al. | Conductivity switching effect in MIS structures with silicon-based insulators, fabricated by low-frequency plasma-enhanced chemical vapor deposition methods | |
US20240178231A1 (en) | Microelectronic device with improved vertical breakdown voltage | |
CN114823309A (zh) | 倾斜超级结器件的侧壁离子注入优化工艺方法 | |
Kelly et al. | Processing of Vertical GaN Power Device via Silicon Nitride Shadowed Selective Area Growth | |
CN118116993A (zh) | 氮化镓基光电导开关及其制备方法 | |
CN117594634A (zh) | 半导体器件 | |
Kazakova et al. | Transient current in amorphous, porous semiconductor-crystalline semiconductor structures | |
Kelkar et al. | Semiconductor modeling for multi-layer, high field, photo-switch using sub-bandgap photons |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20091021 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20091105 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20091221 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100202 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101012 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20101015 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120604 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120612 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120912 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120920 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121011 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121018 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121106 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121113 |
|
A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121211 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130903 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130924 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
LAPS | Cancellation because of no payment of annual fees |