JP5367792B2 - 発光素子 - Google Patents
発光素子 Download PDFInfo
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- JP5367792B2 JP5367792B2 JP2011222960A JP2011222960A JP5367792B2 JP 5367792 B2 JP5367792 B2 JP 5367792B2 JP 2011222960 A JP2011222960 A JP 2011222960A JP 2011222960 A JP2011222960 A JP 2011222960A JP 5367792 B2 JP5367792 B2 JP 5367792B2
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- Japan
- Prior art keywords
- light emitting
- layer
- semiconductor layer
- light
- nitride semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims abstract description 199
- 150000004767 nitrides Chemical class 0.000 claims description 154
- 239000010936 titanium Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 11
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- PLDDOISOJJCEMH-UHFFFAOYSA-N neodymium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Nd+3].[Nd+3] PLDDOISOJJCEMH-UHFFFAOYSA-N 0.000 claims description 3
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(iii) oxide Chemical compound O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 claims 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 1
- 229910000449 hafnium oxide Inorganic materials 0.000 claims 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims 1
- 229910001928 zirconium oxide Inorganic materials 0.000 claims 1
- 239000010410 layer Substances 0.000 description 337
- 239000010408 film Substances 0.000 description 43
- 239000000758 substrate Substances 0.000 description 38
- 230000000052 comparative effect Effects 0.000 description 32
- 230000003287 optical effect Effects 0.000 description 32
- 230000001681 protective effect Effects 0.000 description 30
- 238000000034 method Methods 0.000 description 25
- 239000010931 gold Substances 0.000 description 20
- 235000012431 wafers Nutrition 0.000 description 17
- 229910052697 platinum Inorganic materials 0.000 description 16
- 238000004519 manufacturing process Methods 0.000 description 15
- 230000008878 coupling Effects 0.000 description 14
- 238000010168 coupling process Methods 0.000 description 14
- 238000005859 coupling reaction Methods 0.000 description 14
- 229910052737 gold Inorganic materials 0.000 description 14
- 238000005253 cladding Methods 0.000 description 13
- 238000001312 dry etching Methods 0.000 description 13
- 238000002474 experimental method Methods 0.000 description 12
- 239000011347 resin Substances 0.000 description 12
- 229920005989 resin Polymers 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 230000000694 effects Effects 0.000 description 10
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 9
- 239000007772 electrode material Substances 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000004048 modification Effects 0.000 description 6
- 238000012986 modification Methods 0.000 description 6
- 238000007740 vapor deposition Methods 0.000 description 6
- 238000001039 wet etching Methods 0.000 description 6
- ZDQWESQEGGJUCH-UHFFFAOYSA-N Diisopropyl adipate Chemical compound CC(C)OC(=O)CCCCC(=O)OC(C)C ZDQWESQEGGJUCH-UHFFFAOYSA-N 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 230000006866 deterioration Effects 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 230000001902 propagating effect Effects 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 4
- 239000000356 contaminant Substances 0.000 description 4
- 238000000605 extraction Methods 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000001976 improved effect Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- 239000002346 layers by function Substances 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 229910052703 rhodium Inorganic materials 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 2
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 230000002238 attenuated effect Effects 0.000 description 2
- 239000012141 concentrate Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000009791 electrochemical migration reaction Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000014509 gene expression Effects 0.000 description 2
- 238000001741 metal-organic molecular beam epitaxy Methods 0.000 description 2
- 230000005012 migration Effects 0.000 description 2
- 238000013508 migration Methods 0.000 description 2
- 230000000644 propagated effect Effects 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000002355 alkine group Chemical group 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- ZXGIFJXRQHZCGJ-UHFFFAOYSA-N erbium(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Er+3].[Er+3] ZXGIFJXRQHZCGJ-UHFFFAOYSA-N 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 229910001195 gallium oxide Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(iv) oxide Chemical compound O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002685 polymerization catalyst Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Landscapes
- Led Devices (AREA)
Description
が成り立つ。スネルの法則(1)に基づき、入射角αctr及びαdiaはそれぞれ、
という式より求められる。
という式より求められる。ここで、窪みの直径Lに対する深さDの比D/Lをdと表している。
という式より求められる。ここで窒化物半導体層の屈折率がn1であり、素子外の媒質の屈折率がn2である。
という式で求められる。ここでdは比D/Lである。
101 緩衝層
102 n型窒化物半導体層
103 発光層
104 p型窒化物半導体層
105 p側電極
105a 格子状部
105b p側パッド部
106 窪み
107 n側電極
107a 線状部
107b n側パッド部
111 輪郭溝
150 発光領域
Claims (7)
- 支持層と、前記支持層の上方に形成され、第1の導電型を有し、該支持層よりも抵抗率が低い下側半導体層と、前記下側半導体層の上に形成された発光層と、前記発光層の上に形成され、前記第1の導電型と反対の第2の導電型を有する上側半導体層と、前記上側半導体層上に形成された上側電極とを含む第1の領域と;
前記支持層と、該支持層の上方に形成された前記下側半導体層と、該下側半導体層上に形成された下側電極の第1の部分とを含む第2の領域と;
前記支持層と、該支持層上に形成された前記下側電極の第2の部分とを含む第3の領域と;
を有し、
前記第1〜第3の領域を上方から見たとき、前記第1の領域は四角形の1つの隅を切り欠いた形状を有し、前記第1の領域の切り欠かれた部分が、前記第3の領域と重なりを持ち、該第3の領域に形成された前記下側電極の第2の部分がパッドとして用いられ、前記第1の領域の切り欠かれた隅に隣接する隅に、前記上側電極のうちパッドとして用いられる部分が配置されている発光素子。 - 前記上側電極は、網目形状を有し、該網目形状により、前記上側半導体層の表面が、該上側電極で取り囲まれる複数の区画に分割され、
さらに、前記複数の区画の少なくとも1つの内部に、底面が少なくとも前記下側半導体層の上面まで達する窪みを有する請求項1に記載の発光素子。 - さらに、少なくとも前記窪みの側面上に、前記下側半導体層、発光層、及び上側半導体層を覆うように形成され、前記発光層から放出される光に対して透明である絶縁膜を有する請求項2に記載の発光素子。
- 前記絶縁膜の厚さは100nm〜500nmである請求項3に記載の発光素子。
- 前記絶縁膜は、酸化シリコン、酸化チタン、酸化アルミニウム、酸化ジルコニア、酸化ハフニウム、酸化ネオジウム、酸化エルビウム、及び酸化セリウムのうち少なくとも1つを含む請求項3または4に記載の発光素子。
- 前記絶縁膜は、前記下側パッド部の上面の一部を除いて前記下側電極を覆い、かつ前記上側パッド部の上面の一部を除いて前記上側電極を覆うように形成され、該下側電極及び上側電極の、該絶縁膜に覆われている部分の最表層が、チタン、ニッケル、アルミニウムのうち少なくとも1つを含む請求項5に記載の発光素子。
- 前記下側半導体層、発光層、及び上側半導体層が窒化物半導体からなり、前記下側半導体層及び上側半導体層がそれぞれn型及びp型の導電型を有する請求項1〜6のいずれか1項に記載の発光素子。
Priority Applications (1)
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JP2011222960A JP5367792B2 (ja) | 2011-10-07 | 2011-10-07 | 発光素子 |
Applications Claiming Priority (1)
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JP2011222960A JP5367792B2 (ja) | 2011-10-07 | 2011-10-07 | 発光素子 |
Related Parent Applications (1)
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JP2005317308A Division JP4947954B2 (ja) | 2005-10-31 | 2005-10-31 | 発光素子 |
Publications (2)
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JP2012033953A JP2012033953A (ja) | 2012-02-16 |
JP5367792B2 true JP5367792B2 (ja) | 2013-12-11 |
Family
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JP2011222960A Expired - Fee Related JP5367792B2 (ja) | 2011-10-07 | 2011-10-07 | 発光素子 |
Country Status (1)
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JP (1) | JP5367792B2 (ja) |
Families Citing this family (1)
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JP6091909B2 (ja) * | 2013-01-25 | 2017-03-08 | 旭化成株式会社 | 半導体発光素子用基材の製造方法、半導体発光素子の製造方法、及び、GaN系半導体発光素子 |
Family Cites Families (19)
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---|---|---|---|---|
JP2890390B2 (ja) * | 1994-07-06 | 1999-05-10 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
JPH10256602A (ja) * | 1997-03-12 | 1998-09-25 | Sharp Corp | 半導体発光素子 |
JP3505374B2 (ja) * | 1997-11-14 | 2004-03-08 | 三洋電機株式会社 | 発光部品 |
JP4083877B2 (ja) * | 1998-06-30 | 2008-04-30 | シャープ株式会社 | 半導体発光素子および半導体発光装置 |
US6307218B1 (en) * | 1998-11-20 | 2001-10-23 | Lumileds Lighting, U.S., Llc | Electrode structures for light emitting devices |
JP2000174339A (ja) * | 1998-12-04 | 2000-06-23 | Mitsubishi Cable Ind Ltd | GaN系半導体発光素子およびGaN系半導体受光素子 |
US6329676B1 (en) * | 1999-03-01 | 2001-12-11 | Toru Takayama | Flat panel solid state light source |
JP3973799B2 (ja) * | 1999-07-06 | 2007-09-12 | 松下電器産業株式会社 | 窒化ガリウム系化合物半導体発光素子 |
JP3498698B2 (ja) * | 2000-11-08 | 2004-02-16 | 日亜化学工業株式会社 | 窒化ガリウム系化合物半導体素子 |
JP3576963B2 (ja) * | 2000-11-24 | 2004-10-13 | 三菱電線工業株式会社 | 半導体発光素子 |
JP4644947B2 (ja) * | 2001-02-05 | 2011-03-09 | 日亜化学工業株式会社 | 窒化物半導体素子及びその製造方法 |
JP3921989B2 (ja) * | 2001-10-19 | 2007-05-30 | 日亜化学工業株式会社 | 半導体発光素子 |
JP2003133589A (ja) * | 2001-10-23 | 2003-05-09 | Mitsubishi Cable Ind Ltd | GaN系半導体発光ダイオード |
JP2003243709A (ja) * | 2002-02-15 | 2003-08-29 | Matsushita Electric Works Ltd | 半導体発光素子 |
JP4214704B2 (ja) * | 2002-03-20 | 2009-01-28 | 日亜化学工業株式会社 | 半導体素子 |
JP3912219B2 (ja) * | 2002-08-01 | 2007-05-09 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
TWI222756B (en) * | 2002-11-12 | 2004-10-21 | Epitech Corp Ltd | Lateral current blocking light emitting diode and method of making the same |
JP2004158867A (ja) * | 2003-12-25 | 2004-06-03 | Sumitomo Chem Co Ltd | 3−5族化合物半導体用電極の電流注入特性向上方法 |
TWI246210B (en) * | 2005-04-28 | 2005-12-21 | Epitech Corp Ltd | Lateral current blocking light emitting diode and method for manufacturing the same |
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2011
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