JP5349538B2 - 電気装置 - Google Patents
電気装置 Download PDFInfo
- Publication number
- JP5349538B2 JP5349538B2 JP2011128323A JP2011128323A JP5349538B2 JP 5349538 B2 JP5349538 B2 JP 5349538B2 JP 2011128323 A JP2011128323 A JP 2011128323A JP 2011128323 A JP2011128323 A JP 2011128323A JP 5349538 B2 JP5349538 B2 JP 5349538B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- curing agent
- adhesive
- resin component
- main
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Wire Bonding (AREA)
Description
請求項2記載の発明は、前記主樹脂成分とは別に重合反応する副樹脂成分を含有する請求項1記載の電気装置である。
請求項3記載の発明は、予め半硬化され、シート状に成形された請求項1又は請求項2のいずれか1項記載の電気装置である。
先ず、重合可能な主樹脂成分と、その主樹脂成分を自己重合反応させる主硬化剤と、主樹脂成分に付加重合反応する副硬化剤とを配合し、本発明の接着剤を作製した。この接着剤はペースト状である。
それらの結果を下記表2に示す。
に合格できると予想される。
12、15……接着剤
13……基板
5、6……電気装置
P1……第1の温度
P2……第2の温度
Claims (3)
- 半導体チップと、基板と、前記半導体チップと前記基板の間に配置され、熱処理によって硬化された接着剤を有する電気装置であって、当該接着剤の成分は、
重合可能な主樹脂成分と、
前記主樹脂成分を自己重合反応させる主硬化剤と、
前記主樹脂成分に付加重合反応する副硬化剤と、
導電性粒子とを含有し、
前記主樹脂成分はエポキシ樹脂であり、
前記主硬化剤はエポキシ分散イミダゾール硬化剤であり、
前記副硬化剤はジシアンジアミド系硬化剤又はフェノール系硬化剤であり、
当該接着剤を昇温した場合に、96〜105℃の温度範囲と、135〜162℃の温度範囲において、弾性率の低下率が変化する第一の温度P1 と第二の温度P2がそれぞれ存在し、
前記第一の温度P 1 と前記第二の温度P 2 との間の温度差は、37℃以上あり、
更に、前記第一の温度P1での弾性率をE1とし、前記第二の温度P2での弾性率をE2とすると、前記第一、第二の温度P1 ,P2 の弾性率の低下率(E1/E2)が、2.8以上であることを特徴とする電気装置。 - 前記主樹脂成分とは別に重合反応する副樹脂成分を含有する請求項1記載の電気装置。
- 予め半硬化され、シート状に成形された請求項1又は請求項2のいずれか1項記載の電気装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011128323A JP5349538B2 (ja) | 2011-06-08 | 2011-06-08 | 電気装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011128323A JP5349538B2 (ja) | 2011-06-08 | 2011-06-08 | 電気装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2004223534A Division JP2005020018A (ja) | 2004-07-30 | 2004-07-30 | 接着剤及び電気装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011205126A JP2011205126A (ja) | 2011-10-13 |
JP5349538B2 true JP5349538B2 (ja) | 2013-11-20 |
Family
ID=44881377
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011128323A Expired - Fee Related JP5349538B2 (ja) | 2011-06-08 | 2011-06-08 | 電気装置 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5349538B2 (ja) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2830681B2 (ja) * | 1993-03-08 | 1998-12-02 | ソニーケミカル株式会社 | Icチップ実装方法 |
TW505686B (en) * | 1996-07-15 | 2002-10-11 | Hitachi Chemical Ltd | Film-like adhesive for connecting circuit and circuit board |
JP3853979B2 (ja) * | 1998-06-16 | 2006-12-06 | 日東電工株式会社 | 半導体装置の製法 |
-
2011
- 2011-06-08 JP JP2011128323A patent/JP5349538B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
JP2011205126A (ja) | 2011-10-13 |
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