JP5341501B2 - Rf信号切替回路 - Google Patents
Rf信号切替回路 Download PDFInfo
- Publication number
- JP5341501B2 JP5341501B2 JP2008328626A JP2008328626A JP5341501B2 JP 5341501 B2 JP5341501 B2 JP 5341501B2 JP 2008328626 A JP2008328626 A JP 2008328626A JP 2008328626 A JP2008328626 A JP 2008328626A JP 5341501 B2 JP5341501 B2 JP 5341501B2
- Authority
- JP
- Japan
- Prior art keywords
- switch
- control terminal
- signal switching
- switching circuit
- esd protection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000003990 capacitor Substances 0.000 claims description 22
- 230000001629 suppression Effects 0.000 claims description 12
- 238000000034 method Methods 0.000 description 9
- 230000006378 damage Effects 0.000 description 5
- 230000007257 malfunction Effects 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000004088 simulation Methods 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
- H04B1/50—Circuits using different frequencies for the two directions of communication
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/002—Switching arrangements with several input- or output terminals
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/003—Modifications for increasing the reliability for protection
- H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
- H03K19/00361—Modifications for eliminating interference or parasitic voltages or currents in field effect transistor circuits
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mathematical Physics (AREA)
- Computer Networks & Wireless Communication (AREA)
- Signal Processing (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Computing Systems (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electronic Switches (AREA)
- Logic Circuits (AREA)
- Transceivers (AREA)
- Semiconductor Integrated Circuits (AREA)
Description
図1に示すのは本発明によるRF信号切替回路10である。RF信号切替回路10は、RFスイッチ用ESD保護回路を搭載したRFスイッチ部100およびこのRFスイッチ部100と接続されたスイッチドライバ200を含む。図示するRFスイッチ部100およびスイッチドライバ200は携帯端末に搭載されるもので、RFスイッチ部100がゲート制御端子700によってRFスイッチの2つのポートを構成するFETスイッチ300aと300bとの間でオン・オフの切り替えを行うことにより、アンテナポート800を例えば異なる周波数帯に対応した2種のアンテナポートとして機能させることができる。
200 スイッチドライバ
300a,300b RFスイッチポート
600 ESD保護回路
700 ゲート制御端子
800 アンテナポート
C0 容量
Claims (4)
- 複数のRF信号ポートを選択的に切替えてアンテナポートに接続するRFスイッチと、
前記RFスイッチの制御端子に制御信号を供給し、前記RFスイッチのオン・オフを制御するスイッチドライバと、
前記制御端子と接地端子との間に設けられ、ESD発生時、前記制御端子を接地するESD保護回路と、
前記制御端子と接地端子との間に設けられ、通常動作時、前記制御端子から接地へ前記RFリーク電圧をショートするRFリーク電圧抑圧回路と、
を備え、
前記ESD保護回路は、アノード側が前記制御端子に、カソード側が前記接地端子に向かうよう接続されたn(nは2以上の整数)個の直列接続されたダイオードで構成され、
前記RFリーク電圧抑圧回路は、前記制御端子から数えてm(mは0<m<nの整数)個の前記ダイオードと、m個目とm+1個目のダイオードの接続点に一端が接続され他端が接地されたキャパシタとから構成されることを特徴とするRF信号切替回路。 - 請求項1に記載のRF信号切替回路において、
前記ダイオードはDモードpHEMTであり、前記キャパシタはMIMキャパシタであることを特徴とするRF信号切替回路。 - 請求項1に記載のRF信号切替回路において、
前記ESD保護回路は、ドレインが前記制御端子に接続された第1のトランジスタと、ソースが前記接地端子に接続された第2のトランジスタとで構成され、
前記第1のトランジスタのソースと前記第2のトランジスタのドレインとは共通接続点で接続され、
前記RFリーク電圧抑圧回路は、前記第1のトランジスタと、前記共通接続点に一端が接続され他端が接地されたキャパシタとから構成されることを特徴とするRF信号切替回路。 - 請求項3に記載のRF信号切替回路において、
前記第1および第2のトランジスタはEモードpHEMTであり、前記キャパシタはMIMキャパシタであることを特徴とするRF信号切替回路。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008328626A JP5341501B2 (ja) | 2008-12-24 | 2008-12-24 | Rf信号切替回路 |
KR1020090129285A KR101079526B1 (ko) | 2008-12-24 | 2009-12-22 | Rf 신호 전환 회로 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008328626A JP5341501B2 (ja) | 2008-12-24 | 2008-12-24 | Rf信号切替回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010154114A JP2010154114A (ja) | 2010-07-08 |
JP5341501B2 true JP5341501B2 (ja) | 2013-11-13 |
Family
ID=42572699
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008328626A Expired - Fee Related JP5341501B2 (ja) | 2008-12-24 | 2008-12-24 | Rf信号切替回路 |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP5341501B2 (ja) |
KR (1) | KR101079526B1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102117478B1 (ko) * | 2015-03-13 | 2020-06-01 | 삼성전기주식회사 | 고주파 스위치 |
CN110611499B (zh) * | 2018-06-15 | 2024-01-12 | 锐迪科微电子(上海)有限公司 | 一种基于D-pHEMT器件的射频开关的ESD保护电路 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3983067B2 (ja) * | 2001-03-19 | 2007-09-26 | Necエレクトロニクス株式会社 | 半導体集積回路の静電保護回路 |
JP4005846B2 (ja) * | 2001-05-25 | 2007-11-14 | 株式会社東芝 | 高周波スイッチ装置 |
FR2870990B1 (fr) | 2004-05-26 | 2006-08-11 | St Microelectronics Sa | Protection d'un circuit integre contre des decharges electrostatiques |
JP2009543324A (ja) * | 2006-07-03 | 2009-12-03 | フリースケール セミコンダクター インコーポレイテッド | 静電気放電保護装置及びそのための方法 |
-
2008
- 2008-12-24 JP JP2008328626A patent/JP5341501B2/ja not_active Expired - Fee Related
-
2009
- 2009-12-22 KR KR1020090129285A patent/KR101079526B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20100075399A (ko) | 2010-07-02 |
JP2010154114A (ja) | 2010-07-08 |
KR101079526B1 (ko) | 2011-11-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101712269B1 (ko) | 무선 주파수 스위치에 대한 시스템 및 방법 | |
US7391282B2 (en) | Radio-frequency switch circuit and semiconductor device | |
EP2372906B1 (en) | Power amplifier | |
US6970718B2 (en) | Switch apparatus and mobile communications terminal apparatus | |
KR101752544B1 (ko) | 무선 주파수 집적 회로에 대한 시스템 및 방법 | |
EP0911985B1 (en) | Dual band transmitter with switchable matching circuit | |
US10122356B2 (en) | Semiconductor switch | |
KR20080031133A (ko) | 다중 스택 구조에서 바디 스위칭을 이용한 상보형 금속산화막 반도체 안테나 스위치 시스템, 방법 및 장치 | |
US20140125402A1 (en) | Switching circuit, radio switching circuit, and switching method thereof | |
WO2009008975A2 (en) | Balanced amplifier with protection circuit | |
CN101617474A (zh) | 电子开关网络 | |
US20200169225A1 (en) | Power amplifier module, frontend circuit, and communication device | |
US20100002345A1 (en) | Radio frequency switch electrostatic discharge protection circuit | |
US10009059B2 (en) | High frequency module | |
KR102348686B1 (ko) | 션트 및 바이어스 복합형의 고주파 스위치 장치 | |
US10141927B2 (en) | Optimized RF switching device architecture for impedance control applications | |
JP5341501B2 (ja) | Rf信号切替回路 | |
US20230246639A1 (en) | Switching time reduction of an rf switch | |
TWI647909B (zh) | 開關裝置 | |
EP3930203A1 (en) | Switch device, system and corresponding methods | |
JP4750435B2 (ja) | 半導体スイッチ集積回路 | |
JP5052215B2 (ja) | 半導体スイッチ回路 | |
US11381268B1 (en) | Switchable clamps across attenuators | |
KR100954738B1 (ko) | 스위치 구동 회로 | |
JP2006005811A (ja) | 高周波集積回路 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20111020 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20121030 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130129 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130716 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130808 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5341501 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |