JP5337646B2 - Method for manufacturing piezoelectric device - Google Patents

Method for manufacturing piezoelectric device Download PDF

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JP5337646B2
JP5337646B2 JP2009215110A JP2009215110A JP5337646B2 JP 5337646 B2 JP5337646 B2 JP 5337646B2 JP 2009215110 A JP2009215110 A JP 2009215110A JP 2009215110 A JP2009215110 A JP 2009215110A JP 5337646 B2 JP5337646 B2 JP 5337646B2
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element mounting
piezoelectric
piezoelectric vibration
vibration element
mounting member
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JP2011066649A (en
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利夫 中澤
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Kyocera Crystal Device Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
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    • H01L2924/16152—Cap comprising a cavity for hosting the device, e.g. U-shaped cap

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Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a piezoelectric device that prevents variation in oscillation frequency. <P>SOLUTION: The method of manufacturing the piezoelectric device includes: a sealing part-step part forming process of forming, a sealing part provided to surround the outer periphery of one principal surface of an element mounting member provided with a pair of piezoelectric vibrating element mounting pads on the one principal surface, and a step part provided to surround the outer periphery more inside than the sealing part, by a photosensitive polymer material; a piezoelectric vibrating element mounting process of mounting a piezoelectric vibrating element on the pair of piezoelectric element mounting pads with a conductive adhesive; a piezoelectric vibrating element fixing process of storing the element mounting member in the inner space of a curing furnace, and heating and curing the conductive adhesive to conductively fix the piezoelectric vibrating element mounting pads and piezoelectric vibrating element; and a lid member joining process of joining a lid member and the sealing part of the element mounting member together. <P>COPYRIGHT: (C)2011,JPO&amp;INPIT

Description

本発明は、電子機器等に用いられる圧電デバイスの製造方法に関するものである。   The present invention relates to a method for manufacturing a piezoelectric device used in an electronic apparatus or the like.

図７は、従来の圧電デバイスを示す断面図である。以下、圧電デバイスの一例として圧電振動子について説明する。
図７に示すように、従来の圧電振動子３００は、その例として素子搭載部材３１０、圧電振動素子３２０、蓋部材３３０とから主に構成されている。
素子搭載部材３１０の一方の主面には、２個一対の圧電振動素子搭載パッド３１１が設けられている。
また、素子搭載部材３１０は、シリコンからなる材料が用いられる。また、圧電振動素子搭載パッド３１１は、素子搭載部材３１０の他方の主面に設けられている外部接続用電極端子３１２とビア導体（図示せず）を介して接続している。
これら圧電振動素子搭載パッド３１１上には、導電性接着剤ＤＳを介して電気的に接続される一対の励振用電極３２２を表裏主面に有した圧電振動素子３２０が搭載されている。
この圧電振動素子３２０を囲繞するように素子搭載部材３１０の主面には、封止部ＨＢが設けられている。
また、蓋部材３３０は、蓋部本体３３０ａと壁部３３０ｂと鍔部３３０ｃとで構成され、凹部空間Ｋ１が形成されている。
前記封止部ＨＢの主面には前記蓋部材３３０が被せられ、鍔部３３０ｃと封止部ＨＢが接合されている。これにより、凹部空間Ｋ１が気密封止されている。
段差部ＤＢは、前記素子搭載部材３１０の封止部ＨＢの内側に設けられている。この段差部ＤＢは、蓋部材３３０が位置ずれを起こしてしまうことで、蓋部材３３０が圧電振動素子３２０に接触し、圧電振動素子３２０が割れてしまうことを防ぐ役割を果たす（例えば、特許文献１参照）。 FIG. 7 is a cross-sectional view showing a conventional piezoelectric device. Hereinafter, a piezoelectric vibrator will be described as an example of a piezoelectric device.
As shown in FIG. 7, the conventional piezoelectric vibrator 300 mainly includes an element mounting member 310, a piezoelectric vibration element 320, and a lid member 330 as an example.
On one main surface of the element mounting member 310, two pairs of piezoelectric vibration element mounting pads 311 are provided.
The element mounting member 310 is made of a material made of silicon. The piezoelectric vibration element mounting pad 311 is connected to an external connection electrode terminal 312 provided on the other main surface of the element mounting member 310 via a via conductor (not shown).
On the piezoelectric vibration element mounting pads 311, a piezoelectric vibration element 320 having a pair of excitation electrodes 322 electrically connected via a conductive adhesive DS on the front and back main surfaces is mounted.
A sealing portion HB is provided on the main surface of the element mounting member 310 so as to surround the piezoelectric vibration element 320.
The lid member 330 includes a lid body 330a, a wall 330b, and a flange 330c, and a recessed space K1 is formed.
The lid member 330 is covered on the main surface of the sealing portion HB, and the flange portion 330c and the sealing portion HB are joined. Thereby, the recessed space K1 is hermetically sealed.
The step portion DB is provided inside the sealing portion HB of the element mounting member 310. The step portion DB plays a role of preventing the lid member 330 from being displaced and causing the lid member 330 to contact the piezoelectric vibration element 320 and causing the piezoelectric vibration element 320 to break (for example, Patent Documents). 1).

また、このような圧電振動素子３２０は、圧電素板３２１の表裏主面にそれぞれ設けられた励振用電極３２２から一辺に延設された引き出し電極３２４を圧電振動素子搭載パッド３１１に導電性接着剤ＤＳで固着することで片持ち固定されている。このときの引き出し電極３２４が設けられた一辺とは反対側の端辺を圧電振動素子３２０の自由端である先端部３２３とする（例えば、特許文献２参照）。
この圧電デバイス３００は、例えば、特許文献１で開示されている蓋部材３３０の位置ずれの問題を解決している。 In addition, such a piezoelectric vibration element 320 has a lead adhesive electrode 324 extending from one side of the excitation electrode 322 provided on each of the front and back main surfaces of the piezoelectric element plate 321 and a conductive adhesive on the piezoelectric vibration element mounting pad 311. Cantilevered with DS. At this time, an end opposite to the one side on which the extraction electrode 324 is provided is a front end 323 that is a free end of the piezoelectric vibration element 320 (for example, see Patent Document 2).
The piezoelectric device 300 solves the problem of positional deviation of the lid member 330 disclosed in Patent Document 1, for example.

また、従来の圧電デバイスの製造方法は、シリコンからなる素子搭載部材３１０に圧電振動素子３２０を搭載する圧電振動素子搭載工程と、前記素子搭載部材３１０に設けられた封止部ＨＢと蓋部材３３０の鍔部３３０ｃとを接合する蓋部材接合工程とを含む方法が提案されている（例えば、特許文献３参照）。   In addition, the conventional piezoelectric device manufacturing method includes a piezoelectric vibration element mounting step of mounting the piezoelectric vibration element 320 on the element mounting member 310 made of silicon, and a sealing portion HB provided on the element mounting member 310 and a lid member 330. A method including a lid member joining step for joining the flange portion 330c of the other has been proposed (see, for example, Patent Document 3).

特開２００１−１０２８９１号公報JP 2001-102891 A 特開２００８−２５２７８２号公報JP 2008-252782 A 特開２００６−２７９８７２号公報JP 2006-279872 A

しかしながら、従来の圧電デバイス３００は、封止部ＨＢと段差部ＤＢとを別々に設けている。これは、封止部ＨＢが金属であり、段差部ＤＢが絶縁性樹脂であるため、分けて設ける必要がある。そのため、工程が増えてしまい、圧電デバイス３００の生産性を低下させる原因となる。
また、このように製造される圧電デバイス３００は、段差部ＤＢが、絶縁性樹脂を塗布や印刷することで形成するため、絶縁性樹脂の塗布位置や印刷位置のバラツキと、絶縁性樹脂の広がりによって、段差部ＤＢの寸法バラツキや位置ずれが生じ、圧電振動素子３２０と段差部ＤＢが接触してしまうことになり、圧電デバイス３００の発振周波数が変動するといった課題があった。 However, the conventional piezoelectric device 300 is provided with the sealing portion HB and the stepped portion DB separately. This is because the sealing portion HB is made of metal and the stepped portion DB is made of an insulating resin, so that it needs to be provided separately. For this reason, the number of processes increases, which causes a decrease in productivity of the piezoelectric device 300.
In addition, since the stepped portion DB is formed by applying or printing the insulating resin in the piezoelectric device 300 manufactured in this way, the variation in the application position and the printing position of the insulating resin and the spread of the insulating resin are increased. As a result, the dimensional variation and the positional deviation of the stepped portion DB occur, the piezoelectric vibrating element 320 and the stepped portion DB come into contact with each other, and the oscillation frequency of the piezoelectric device 300 fluctuates.

本発明は前記課題に鑑みてなされたものであり、圧電デバイスの発振周波数の変動を防ぎ、生産性を向上させる圧電デバイスの製造方法を提供することを課題とする。   The present invention has been made in view of the above problems, and an object of the present invention is to provide a method for manufacturing a piezoelectric device that prevents fluctuations in the oscillation frequency of the piezoelectric device and improves productivity.

本発明の圧電デバイスの製造方法は、２個一対の圧電振動素子搭載パッドが一方の主面に設けられている素子搭載部材の一方の主面の外周を囲繞するように設けられている封止部と、前記封止部よりも内側を囲繞するように設けられている段差部とを感光性ポリマー材により形成する封止部・段差部形成工程と、導電性接着剤によって２個一対の圧電振動素子搭載パッドに圧電振動素子を搭載する圧電振動素子搭載工程と、硬化炉の内部空間に素子搭載部材を収容し、導電性接着剤を加熱硬化させ、圧電振動素子搭載パッドと圧電振動素子とを導通固着する圧電振動素子固着工程と、蓋部材と素子搭載部材の封止部とを接合する蓋部材接合工程とを含むことを特徴とするものである。   The method for manufacturing a piezoelectric device of the present invention is a sealing provided so as to surround the outer periphery of one main surface of an element mounting member in which two pairs of piezoelectric vibration element mounting pads are provided on one main surface. A step of forming a sealing portion and a step portion formed of a photosensitive polymer material, and a pair of piezoelectric elements using a conductive adhesive, and a step portion provided so as to surround the inside of the sealing portion. A piezoelectric vibration element mounting process for mounting the piezoelectric vibration element on the vibration element mounting pad, and an element mounting member is accommodated in the internal space of the curing furnace, the conductive adhesive is heated and cured, and the piezoelectric vibration element mounting pad and the piezoelectric vibration element And a lid member joining step for joining the lid member and the sealing portion of the element mounting member.

また、集積回路素子を素子搭載部材の集積回路素子搭載パッドに搭載する集積回路素子搭載工程を、蓋部材接合工程の後に行うことを特徴とするものである。   In addition, the integrated circuit element mounting step of mounting the integrated circuit element on the integrated circuit element mounting pad of the element mounting member is performed after the lid member joining step.

本発明の圧電デバイスの製造方法によれば、２個一対の圧電振動素子搭載パッドが一方の主面に設けられている素子搭載部材の一方の主面の外周を囲繞するように設けられている封止部と、前記封止部よりも内側を囲繞するように設けられている段差部とをポリマー材により形成する封止部及び段差部形成工程により封止部と段差部を同時に形成することができる。よって、封止部と段差部とを分けて設ける必要がないので、圧電デバイスの生産性を向上させることができる。   According to the piezoelectric device manufacturing method of the present invention, two pairs of piezoelectric vibration element mounting pads are provided so as to surround the outer periphery of one main surface of the element mounting member provided on one main surface. Forming the sealing portion and the step portion at the same time by forming the sealing portion and the step portion provided so as to surround the inside of the sealing portion with a polymer material and the step portion forming step. Can do. Therefore, it is not necessary to provide the sealing part and the step part separately, so that the productivity of the piezoelectric device can be improved.

また、封止部及び段差部の感光性ポリマー材を露光し、封止部及び段差部以外の未露光箇所を現像することで、未露光箇所の感光性ポリマー材を除去し、封止部と段差部を同時に形成するため、段差部の長辺の長さ、段差部の短辺の長さ、段差部の厚みの調整を容易に行うことができる。これにより、段差部の寸法バラツキや位置ずれを防ぐことができる。よって、圧電振動素子が段差部に接触することがないため、発振周波数の変動を防ぐことができる。   Further, the photosensitive polymer material at the sealing portion and the stepped portion is exposed, and the unexposed portion other than the sealing portion and the stepped portion is developed to remove the photosensitive polymer material at the unexposed portion, and the sealing portion and Since the step portion is formed at the same time, the length of the long side of the step portion, the length of the short side of the step portion, and the thickness of the step portion can be easily adjusted. Thereby, the dimensional variation and position shift of a level difference part can be prevented. Therefore, since the piezoelectric vibration element does not come into contact with the stepped portion, fluctuations in the oscillation frequency can be prevented.

本発明の実施形態に係る圧電デバイスの製造方法で形成された圧電デバイスを示す分解斜視図である。It is a disassembled perspective view which shows the piezoelectric device formed with the manufacturing method of the piezoelectric device which concerns on embodiment of this invention. 図１のＡ−Ａ断面図である。It is AA sectional drawing of FIG. （ａ）は、素子搭載部材の主面に感光性ポリマー材を形成した状態を示す断面図であり、（ｂ）は、（ａ）の感光性ポリマー材から封止部及び支点用バンプを形成した状態を示す断面図であり、（ｃ）は、導電性接着剤を介して圧電振動素子搭載パッドに圧電振動素子を搭載する前の状態を示す断面図であり、（ｄ）は、圧電振動素子搭載パッドに圧電振動素子を搭載し、導電性接着剤を固着した状態を示す断面図であり、（ｅ）は、蓋部材と素子搭載部材とが接合した状態を示す断面図である。(A) is sectional drawing which shows the state which formed the photosensitive polymer material in the main surface of an element mounting member, (b) forms the sealing part and bump for a fulcrum from the photosensitive polymer material of (a). FIG. 6C is a cross-sectional view showing a state before the piezoelectric vibration element is mounted on the piezoelectric vibration element mounting pad via the conductive adhesive, and FIG. It is sectional drawing which shows the state which mounted the piezoelectric vibration element on the element mounting pad, and adhered the conductive adhesive, (e) is sectional drawing which shows the state which the cover member and the element mounting member joined. （ａ）は、本発明の圧電デバイスの製造方法の封止部及び支点用バンプ形成工程を示す一例としてシリコンウエハを用いた斜視図であり、（ｂ）は、（ａ）のシリコンウエハに感光性ポリマーを形成した状態を示した斜視図であり、（ｃ）は、（ｂ）のシリコンウエハに形成した感光性ポリマー材を除去し、封止部及び支点用バンプを形成した状態を示した斜視図である。(A) is the perspective view which used the silicon wafer as an example which shows the sealing part and fulcrum bump formation process of the manufacturing method of the piezoelectric device of this invention, (b) is photosensitive to the silicon wafer of (a). It is the perspective view which showed the state which formed the photopolymer, (c) removed the photosensitive polymer material formed in the silicon wafer of (b), and showed the state which formed the bump part for sealing parts and fulcrum It is a perspective view. 本発明の実施形態に係る圧電デバイスの製造方法で形成された圧電デバイスの他の一例を示す分解斜視図である。It is a disassembled perspective view which shows another example of the piezoelectric device formed with the manufacturing method of the piezoelectric device which concerns on embodiment of this invention. 図５のＢ−Ｂ断面図である。It is BB sectional drawing of FIG. 従来の圧電デバイスを示す断面図である。It is sectional drawing which shows the conventional piezoelectric device.

以下、本発明を添付図面に基づいて詳細に説明する。尚、圧電振動素子に水晶を用いた場合について説明する。また、図示した寸法も一部誇張して示している。   Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. A case where quartz is used for the piezoelectric vibration element will be described. In addition, the illustrated dimensions are partially exaggerated.

（第１の実施形態）
図１は、本発明の実施形態に係る圧電デバイスの製造方法で形成された圧電デバイスを示す分解斜視図である。図２は、図１のＡ−Ａ断面図である。 (First embodiment)
FIG. 1 is an exploded perspective view showing a piezoelectric device formed by a method for manufacturing a piezoelectric device according to an embodiment of the present invention. FIG. 2 is a cross-sectional view taken along the line AA of FIG.

本実施形態において、圧電デバイスの一例として、圧電振動子について説明する。
図１及び図２に示すように、本発明の第１の実施形態に係る圧電振動子１００は、素子搭載部材１１０と圧電振動素子１２０と蓋部材１３０で主に構成されている。この圧電振動子１００は、前記素子搭載部材１１０に圧電振動素子１２０が搭載され、凹部空間Ｋ１（図２参照）が設けられた蓋部材１３０により気密封止された構造となっている。 In the present embodiment, a piezoelectric vibrator will be described as an example of a piezoelectric device.
As shown in FIGS. 1 and 2, the piezoelectric vibrator 100 according to the first embodiment of the present invention mainly includes an element mounting member 110, a piezoelectric vibration element 120, and a lid member 130. The piezoelectric vibrator 100 has a structure in which the piezoelectric vibration element 120 is mounted on the element mounting member 110 and is hermetically sealed by a lid member 130 provided with a recessed space K1 (see FIG. 2).

圧電振動素子１２０は、図１及び図２に示すように、水晶素板１２１に励振用電極１２２を被着形成したものであり、外部からの交番電圧が励振用電極１２２を介して水晶素板１２１に印加されると、所定の振動モード及び周波数で励振を起こすようになっている。
水晶素板１２１は、人工水晶体から所定のカットアングルで切断し外形加工を施された概略平板状で平面形状が例えば四角形となっている。
励振用電極１２２は、前記水晶素板１２１の表裏両主面に金属を所定のパターンで被着・形成したものである。
このような圧電振動素子１２０は、その両主面に被着されている励振用電極１２２から延出する引き出し電極１２４と後述する素子搭載部材１１０の主面に形成されている後述する圧電振動素子搭載パッド１１１とを、導電性接着剤ＤＳ（図２参照）を介して電気的且つ機械的に接続することによって搭載される。このときの引き出し電極１２４が設けられた一辺とは反対側の端辺を圧電振動素子１２０の自由端である先端部１２３とする。 As shown in FIGS. 1 and 2, the piezoelectric vibration element 120 is formed by adhering an excitation electrode 122 to a crystal element plate 121, and an alternating voltage from the outside passes through the excitation electrode 122. When applied to 121, excitation occurs in a predetermined vibration mode and frequency.
The quartz base plate 121 is a substantially flat plate shape that is cut from an artificial crystalline lens at a predetermined cut angle and is subjected to outer shape processing, and has a planar shape of, for example, a quadrangle.
The excitation electrode 122 is formed by depositing and forming a metal in a predetermined pattern on both the front and back main surfaces of the crystal base plate 121.
Such a piezoelectric vibration element 120 includes a lead electrode 124 extending from an excitation electrode 122 attached to both main surfaces of the piezoelectric vibration element 120 and a piezoelectric vibration element described later formed on a main surface of an element mounting member 110 described later. Mounting is performed by electrically and mechanically connecting the mounting pad 111 via a conductive adhesive DS (see FIG. 2). At this time, an end opposite to the one side where the extraction electrode 124 is provided is defined as a distal end portion 123 which is a free end of the piezoelectric vibration element 120.

図１及び図２に示す素子搭載部材１１０は、シリコンからなり、また、平板状に形成されている。また、素子搭載部材１１０は、圧電振動素子搭載パッド１１１と、外部接続用電極端子１１２と、封止部ＨＢと、段差部ＤＢとが設けられている。
素子搭載部材１１０の一方の主面の外周縁を囲繞するように設けられた感光性ポリマー材の封止部ＨＢと後述する蓋部材１３０の鍔部１３０ｃとが接合される。
段差部ＤＢは、前記封止部ＨＢよりも内側を囲繞するように、素子搭載部材１１０の一方の主面に設けられている。
また、２個一対の圧電振動素子搭載パッド１１１は、囲むように設けられている前記段差部ＤＢよりも内側の素子搭載部材１１０の主面に設けられている。
また、素子搭載部材１１０の一方の主面には、２個一対の圧電振動素子搭載パッド１１１が設けられ、素子搭載部材１１０の他方の主面の４隅には、外部接続用電極端子１１２が設けられている。
圧電振動素子搭載パッド１１１は、素子搭載部材１１０の他方の主面に設けられている外部接続用電極端子１１２とビア導体（図示せず）を介して接続している。 The element mounting member 110 shown in FIGS. 1 and 2 is made of silicon and has a flat plate shape. The element mounting member 110 includes a piezoelectric vibration element mounting pad 111, an external connection electrode terminal 112, a sealing portion HB, and a step portion DB.
A sealing portion HB of a photosensitive polymer material provided so as to surround the outer peripheral edge of one main surface of the element mounting member 110 and a collar portion 130c of the lid member 130 described later are joined.
The step portion DB is provided on one main surface of the element mounting member 110 so as to surround the inside of the sealing portion HB.
Further, the two pairs of piezoelectric vibration element mounting pads 111 are provided on the main surface of the element mounting member 110 inside the stepped portion DB provided so as to surround.
Further, two pairs of piezoelectric vibration element mounting pads 111 are provided on one main surface of the element mounting member 110, and external connection electrode terminals 112 are provided at the four corners of the other main surface of the element mounting member 110. Is provided.
The piezoelectric vibration element mounting pad 111 is connected to an external connection electrode terminal 112 provided on the other main surface of the element mounting member 110 via a via conductor (not shown).

図１及び図２に示すように、段差部ＤＢは、封止部ＨＢよりも内側を囲繞するように設けられている。つまり、段差部ＤＢは、圧電振動素子搭載パッド１１１よりも外側で、封止部ＨＢよりも内側を囲むようにして設けられている。
また、封止部ＨＢの厚みは、例えば２０〜３０μｍであり、段差部ＤＢの厚みは、例えば３５〜１００μｍである。つまり、段差部ＤＢの厚みは、封止部ＨＢの厚みよりも厚くなっている。 As shown in FIG.1 and FIG.2, level | step-difference part DB is provided so that the inner side may be enclosed rather than the sealing part HB. That is, the stepped portion DB is provided outside the piezoelectric vibration element mounting pad 111 and surrounding the sealing portion HB.
Moreover, the thickness of the sealing part HB is 20-30 micrometers, for example, and the thickness of level | step-difference part DB is 35-100 micrometers, for example. That is, the thickness of the stepped portion DB is larger than the thickness of the sealing portion HB.

蓋部材１３０は、図２に示すように、蓋本体部１３０ａと壁部１３０ｂと鍔部１３０ｃから主に構成されており、前記圧電振動素子１２０を内包できるように、蓋本体部１３０ａと壁部１３０ｂにより凹部空間Ｋ１が形成されている。
前記蓋部材１３０は、例えば、Ｆｅ−Ｎｉ合金（４２アロイ）やＦｅ−Ｎｉ−Ｃｏ合金（コバール）または、シリコンなどからなる。
具体的には、蓋部材１３０は、素子搭載部材１１０の封止部ＨＢ上に載置され、例えば３００〜４００℃の雰囲気内の恒温槽内で荷重を加えることによって、封止部ＨＢに接合される。 As shown in FIG. 2, the lid member 130 is mainly composed of a lid main body portion 130 a, a wall portion 130 b, and a flange portion 130 c, and the lid main body portion 130 a and the wall portion so as to contain the piezoelectric vibration element 120. A recess space K1 is formed by 130b.
The lid member 130 is made of, for example, an Fe—Ni alloy (42 alloy), an Fe—Ni—Co alloy (Kovar), silicon, or the like.
Specifically, the lid member 130 is placed on the sealing portion HB of the element mounting member 110 and is bonded to the sealing portion HB by applying a load in a thermostatic chamber in an atmosphere of 300 to 400 ° C., for example. Is done.

前記導電性接着剤ＤＳは、シリコーン樹脂等のバインダーの中に導電フィラーとして導電性粉末が含有されているものであり、導電性粉末としては、例えばアルミニウム（Ａｌ）、モリブデン（Ｍｏ）、タングステン（Ｗ）、白金（Ｐｔ）、パラジウム（Ｐｄ）、銀（Ａｇ）、チタン（Ｔｉ）、ニッケル（Ｎｉ）、ニッケル鉄（ＮｉＦｅ）、のうちのいずれかまたはこれらの組み合わせを含むものが用いられている。   The conductive adhesive DS contains conductive powder as a conductive filler in a binder such as silicone resin. Examples of the conductive powder include aluminum (Al), molybdenum (Mo), tungsten ( W), platinum (Pt), palladium (Pd), silver (Ag), titanium (Ti), nickel (Ni), nickel iron (NiFe), or any combination thereof is used. Yes.

次に前記圧電デバイスの製造方法について図３を用いて説明する。
図３（ａ）は、素子搭載部材の主面に感光性ポリマー材を形成した状態を示す断面図であり、図３（ｂ）は、図３（ａ）の感光性ポリマー材から封止部及び段差部を形成した状態を示す断面図であり、図３（ｃ）は、導電性接着剤を介して圧電振動素子搭載パッドに圧電振動素子を搭載する前の状態を示す断面図であり、図３（ｄ）は、圧電振動素子搭載パッドに圧電振動素子を搭載し、導電性接着剤を固着した状態を示す断面図であり、図３（ｅ）は、蓋部材と素子搭載部材とが接合した状態を示す断面図である。図４（ａ）は、本発明の圧電デバイスの製造方法の封止部・段差部形成工程を示す一例としてシリコンウエハを用いた斜視図であり、図４（ｂ）は、図４（ａ）のシリコンウエハに感光性ポリマーを形成した状態を示した斜視図であり、図４（ｃ）は、図４（ｂ）のシリコンウエハに形成した感光性ポリマー材を除去し、封止部及び段差部を形成した状態を示した斜視図である。 Next, a method for manufacturing the piezoelectric device will be described with reference to FIG.
FIG. 3A is a cross-sectional view showing a state in which a photosensitive polymer material is formed on the main surface of the element mounting member, and FIG. 3B shows a sealing portion from the photosensitive polymer material of FIG. And FIG. 3C is a cross-sectional view showing a state before the piezoelectric vibration element is mounted on the piezoelectric vibration element mounting pad via the conductive adhesive. FIG. 3D is a cross-sectional view illustrating a state in which the piezoelectric vibration element is mounted on the piezoelectric vibration element mounting pad and the conductive adhesive is fixed, and FIG. 3E illustrates the lid member and the element mounting member. It is sectional drawing which shows the state joined. FIG. 4A is a perspective view using a silicon wafer as an example showing a sealing part / step difference forming step of the piezoelectric device manufacturing method of the present invention, and FIG. 4B is a perspective view of FIG. FIG. 4C is a perspective view showing a state in which a photosensitive polymer is formed on the silicon wafer of FIG. 4C, and FIG. 4C is a perspective view showing a sealing portion and a step formed by removing the photosensitive polymer material formed on the silicon wafer of FIG. It is the perspective view which showed the state which formed the part.

（封止部・段差部形成工程）
図３（ａ）及び図３（ｂ）に示すように、封止部・段差部形成工程は、２個一対の圧電振動素子搭載パッド１１１が一方の主面に設けられているシリコンからなる素子搭載部材１１０の一方の主面の外周を囲繞するように設けられている封止部ＨＢと、封止部ＨＢよりも内側を囲繞するように設けられている段差部ＤＢとを感光性ポリマー材ＫＰにより同時に形成する工程である。 (Sealing / step formation process)
As shown in FIGS. 3A and 3B, the sealing portion / step difference forming step is an element made of silicon in which two pairs of piezoelectric vibration element mounting pads 111 are provided on one main surface. A photosensitive polymer material includes a sealing portion HB provided so as to surround the outer periphery of one main surface of the mounting member 110 and a step portion DB provided so as to surround the inner side of the sealing portion HB. It is a process of forming simultaneously by KP.

図３（ａ）に示すように、シリコンからなる素子搭載部材１１０の主面に、感光性ポリマー材ＫＰを印刷または塗布する。また、素子搭載部材１１０の主面に形成された感光性ポリマー材ＫＰの厚みを、スピンコート法等により均一にする。この際の感光性ポリマー材ＫＰの厚みは、例えば３５〜１００μｍである。
感光性ポリマー材ＫＰは、例えば、感光性ポリイミド等により構成されている。
次に、素子搭載部材１１０の主面にフォトマスク（図示せず）を被せた状態で封止部ＨＢ及び段差部ＤＢを露光し、封止部ＨＢ及び段差部ＤＢ以外の未露光箇所を現像することで、未露光箇所の感光性ポリマー材ＫＰを除去する。この際に、封止部ＨＢの露光時間を調整することで、封止部ＨＢの厚みを調整する。
このようにすることで、図３（ｂ）に示すように、素子搭載部材１１０に封止部ＨＢ及び段差部ＤＢを形成する。この際に、封止部ＨＢの厚みは、例えば２０〜３０μｍになり、段差部ＤＢの厚みは、例えば３５〜１００μｍとなる。 As shown in FIG. 3A, a photosensitive polymer material KP is printed or applied to the main surface of the element mounting member 110 made of silicon. Further, the thickness of the photosensitive polymer material KP formed on the main surface of the element mounting member 110 is made uniform by a spin coating method or the like. The thickness of the photosensitive polymer material KP at this time is, for example, 35 to 100 μm.
The photosensitive polymer material KP is made of, for example, photosensitive polyimide.
Next, the sealing portion HB and the stepped portion DB are exposed while a main surface of the element mounting member 110 is covered with a photomask (not shown), and unexposed portions other than the sealing portion HB and the stepped portion DB are developed. By doing so, the photosensitive polymer material KP in an unexposed part is removed. At this time, the thickness of the sealing portion HB is adjusted by adjusting the exposure time of the sealing portion HB.
By doing so, as shown in FIG. 3B, the sealing portion HB and the stepped portion DB are formed in the element mounting member 110. At this time, the thickness of the sealing portion HB is, for example, 20 to 30 μm, and the thickness of the stepped portion DB is, for example, 35 to 100 μm.

（圧電振動素子搭載工程）
図３（ｃ）に示すように、圧電振動素子搭載工程は、導電性接着剤ＤＳによって２個一対の圧電振動素子搭載パッド１１１に圧電振動素子１２０を搭載する工程である。 (Piezoelectric vibrator mounting process)
As shown in FIG. 3C, the piezoelectric vibration element mounting process is a process of mounting the piezoelectric vibration element 120 on the pair of piezoelectric vibration element mounting pads 111 by the conductive adhesive DS.

素子搭載部材１１０の基板部１１０ａには、２個一対の圧電振動素子搭載パッド１１１が設けられており、前記圧電振動素子搭載パッド１１１上に導電性接着剤ＤＳを塗布し、この圧電振動素子搭載パッド１１１に塗布された導電性接着剤ＤＳに圧電振動素子１２０の表面に形成した励振用電極１２２から延出した引き出し電極１２４を付着させる形態で圧電振動素子１２０を搭載する。   The substrate portion 110a of the element mounting member 110 is provided with two pairs of piezoelectric vibration element mounting pads 111. A conductive adhesive DS is applied on the piezoelectric vibration element mounting pad 111, and the piezoelectric vibration element mounting is performed. The piezoelectric vibration element 120 is mounted in a form in which a lead electrode 124 extending from the excitation electrode 122 formed on the surface of the piezoelectric vibration element 120 is attached to the conductive adhesive DS applied to the pad 111.

（圧電振動素子固着工程）
図３（ｄ）に示すように、圧電振動素子固着工程は、前記導電性接着剤ＤＳを加熱硬化させ、前記圧電振動素子搭載パッド１１１と前記圧電振動素子１２０とを導通固着する工程である。 (Piezoelectric vibration element fixing process)
As shown in FIG. 3D, the piezoelectric vibration element fixing step is a step in which the conductive adhesive DS is heated and cured, and the piezoelectric vibration element mounting pad 111 and the piezoelectric vibration element 120 are conductively fixed.

硬化炉（図示せず）は、炉本体と、加熱部と、供給部、制御部によって構成されている。
炉本体は、内部空間を有し、前記素子搭載部材１１０を格納する役割を果たす。
加熱部は、前記内部空間を所定の温度に加熱する役割を果たす。加熱部は、例えば、ハロゲンランプ、キセノンランプ等が用いられている。
供給部は、前記内部空間にガスを供給する役割を果たす。ガスは、例えば窒素等が用いられている。
制御部は、炉本体の内部空間の温度や酸素濃度、加熱部の昇温速度、供給部のガスの供給量の制御を行うものである。
硬化炉（図示せず）に前記素子搭載部材１１０を収容し、約２５０℃まで昇温することで、前記導電性接着剤ＤＳを加熱硬化させる。 A curing furnace (not shown) includes a furnace body, a heating unit, a supply unit, and a control unit.
The furnace body has an internal space and serves to store the element mounting member 110.
The heating unit plays a role of heating the internal space to a predetermined temperature. For example, a halogen lamp or a xenon lamp is used as the heating unit.
The supply unit serves to supply gas to the internal space. For example, nitrogen is used as the gas.
The control unit controls the temperature and oxygen concentration of the internal space of the furnace body, the temperature increase rate of the heating unit, and the gas supply amount of the supply unit.
The element mounting member 110 is accommodated in a curing furnace (not shown), and the conductive adhesive DS is heated and cured by raising the temperature to about 250 ° C.

（蓋部材接合工程）
図３（ｅ）に示すように、蓋部材接合工程は、蓋部材１３０と素子搭載部材１１０の封止部ＨＢとを接合する工程である。
蓋部材１３０に荷重をかけながら恒温槽（図示せず）に入れることによって、蓋部材１３０と素子搭載部材１１０の封止部ＨＢとが接合する。これによって、蓋部材１３０の凹部空間Ｋ１内が気密封止されることになる。 (Cover member joining process)
As shown in FIG. 3E, the lid member joining step is a step of joining the lid member 130 and the sealing portion HB of the element mounting member 110.
By putting the lid member 130 in a thermostatic bath (not shown) while applying a load, the lid member 130 and the sealing portion HB of the element mounting member 110 are joined. As a result, the inside of the recessed space K1 of the lid member 130 is hermetically sealed.

蓋部材１３０にかける荷重としては、例えば９８０６．６５Ｎである。また、恒温槽（図示せず）内の温度は、例えば３００℃〜４００℃である。   The load applied to the lid member 130 is, for example, 9806.65N. Moreover, the temperature in a thermostat (not shown) is 300 to 400 degreeC, for example.

尚、図４（ａ）に示すように、素子搭載部材１１０は、行列状に並べられているシリコンウエハＷＨになっているものでも構わない。
また、図４（ｂ）に示すように、シリコンウエハＷＨを用いる場合には、各素子搭載部材１１０の主面に、感光性ポリマー材ＫＰを印刷または塗布する。また、素子搭載部材１１０の主面に形成された感光性ポリマー材ＫＰの厚みを、スピンコート法等により均一にする。
次に、素子搭載部材１１０の主面にフォトマスク（図示せず）を被せ、封止部ＨＢ及び段差部ＤＢを露光し、封止部ＨＢ及び段差部ＤＢ以外の未露光箇所を現像することで、未露光箇所の感光性ポリマー材ＫＰを除去する。このようにすることで、図４（ｃ）に示すように、各素子搭載部材１１０に封止部ＨＢ及び段差部ＤＢを形成する。
また、シリコンウエハＷＨは、各素子搭載部材１１０に圧電振動素子１２０を搭載し、蓋部材１３０を接合した後、ダイシングブレードやレーザ等により、各素子搭載部材１１０に分割する。このようにすることで、複数の圧電デバイス１００を得ることができる。 As shown in FIG. 4A, the element mounting member 110 may be a silicon wafer WH arranged in a matrix.
Further, as shown in FIG. 4B, when the silicon wafer WH is used, a photosensitive polymer material KP is printed or applied to the main surface of each element mounting member 110. Further, the thickness of the photosensitive polymer material KP formed on the main surface of the element mounting member 110 is made uniform by a spin coating method or the like.
Next, a main surface of the element mounting member 110 is covered with a photomask (not shown), the sealing portion HB and the stepped portion DB are exposed, and unexposed portions other than the sealing portion HB and the stepped portion DB are developed. Then, the photosensitive polymer material KP in the unexposed area is removed. By doing in this way, as shown in FIG.4 (c), the sealing part HB and level | step difference part DB are formed in each element mounting member 110. FIG.
Further, the silicon wafer WH is divided into each element mounting member 110 by a dicing blade, a laser, or the like after mounting the piezoelectric vibration element 120 on each element mounting member 110 and joining the lid member 130. By doing in this way, the some piezoelectric device 100 can be obtained.

このように、本発明の圧電デバイスの製造方法によれば、２個一対の圧電振動素子搭載パッド１１１が一方の主面に設けられている素子搭載部材１１０の一方の主面の外周を囲繞するように設けられている封止部ＨＢと、前記封止部よりも内側を囲繞するように設けられている段差部ＤＢとを感光性ポリマー材ＫＰで形成する封止部・段差部形成工程により、封止部ＨＢと段差部ＤＢを同時に形成することができる。よって、封止部ＨＢと段差部ＤＢとを分けて設ける必要がないので、圧電デバイス１００の生産性を向上させることができる。   Thus, according to the method for manufacturing a piezoelectric device of the present invention, two pairs of piezoelectric vibration element mounting pads 111 surround the outer periphery of one main surface of the element mounting member 110 provided on one main surface. The sealing part / step part forming step of forming the sealing part HB provided in this way and the step part DB provided so as to surround the inside of the sealing part with the photosensitive polymer material KP The sealing part HB and the step part DB can be formed simultaneously. Therefore, it is not necessary to provide the sealing portion HB and the stepped portion DB separately, so that the productivity of the piezoelectric device 100 can be improved.

また、封止部ＨＢ及び段差部ＤＢの感光性ポリマー材ＫＰを露光し、封止部ＨＢ及び段差部ＤＢ以外の未露光箇所を現像することで、未露光箇所の感光性ポリマー材を除去し、封止部ＨＢと段差部ＤＢを同時に形成するため、段差部ＤＢの長辺の長さ、段差部ＤＢの短辺の長さ、段差部ＤＢの厚みの調整を容易に行うことができる。これにより、段差部ＤＢの寸法バラツキや位置ずれを防ぐことができる。よって、圧電振動素子１２０が段差部ＤＢに接触することがないため、発振周波数の変動を防ぐことができる。   Moreover, the photosensitive polymer material KP of the sealing part HB and the step part DB is exposed, and the unexposed part other than the sealing part HB and the step part DB is developed to remove the photosensitive polymer material in the unexposed part. Since the sealing portion HB and the stepped portion DB are formed simultaneously, the length of the long side of the stepped portion DB, the length of the short side of the stepped portion DB, and the thickness of the stepped portion DB can be easily adjusted. Thereby, the dimension variation and position shift of level | step-difference part DB can be prevented. Therefore, since the piezoelectric vibration element 120 does not contact the stepped portion DB, fluctuations in the oscillation frequency can be prevented.

（第２の実施形態）
次に本発明の第２の実施形態に係る圧電デバイスについて説明する。本実施形態における圧電デバイスの一例として、圧電発振器について説明する。
図５は、本発明の実施形態に係る圧電デバイスの製造方法で形成された圧電デバイスの他の一例を示す分解斜視図である。図６は、図５のＢ−Ｂ断面図である。また、図示した寸法も一部誇張して示している。
本発明の第２の実施形態に係る圧電デバイス２００は、素子搭載部材２１０の基板部２１０ａと第２の枠部２１０ｃによって設けられた第２の凹部空間Ｋ２内に集積回路素子２４０が搭載されている点で第１の実施形態と異なる。 (Second Embodiment)
Next, a piezoelectric device according to a second embodiment of the present invention will be described. A piezoelectric oscillator will be described as an example of the piezoelectric device in the present embodiment.
FIG. 5 is an exploded perspective view showing another example of the piezoelectric device formed by the piezoelectric device manufacturing method according to the embodiment of the present invention. 6 is a cross-sectional view taken along line BB in FIG. In addition, the illustrated dimensions are partially exaggerated.
In the piezoelectric device 200 according to the second embodiment of the present invention, the integrated circuit element 240 is mounted in the second recessed space K2 provided by the substrate portion 210a and the second frame portion 210c of the element mounting member 210. This is different from the first embodiment.

図５及び図６に示すように、本発明の第２の実施形態に係る圧電発振器２００は、素子搭載部材２１０と圧電振動素子１２０と蓋部材１３０と集積回路素子２４０で主に構成されている。この圧電発振器２００は、前記素子搭載部材２１０に圧電振動素子１２０が搭載され、前記素子搭載部材２１０に形成されている第２の凹部空間Ｋ２内に集積回路素子２４０が搭載され、その圧電振動素子１２０が蓋部材１３０により気密封止された構造となっている。   As shown in FIGS. 5 and 6, the piezoelectric oscillator 200 according to the second embodiment of the present invention mainly includes an element mounting member 210, a piezoelectric vibration element 120, a lid member 130, and an integrated circuit element 240. . In the piezoelectric oscillator 200, the piezoelectric vibration element 120 is mounted on the element mounting member 210, and an integrated circuit element 240 is mounted in a second recessed space K 2 formed in the element mounting member 210. 120 is hermetically sealed by the lid member 130.

集積回路素子２４０は、図５及び図６に示すように、回路形成面に前記圧電振動素子１２０からの発振出力を生成する発振回路等が設けられており、この発振回路で生成された出力信号は外部接続用電極端子２１２を介して圧電発振器２００の外へ出力され、例えば、クロック信号等の基準信号として利用される。
また、集積回路素子２４０には、可変容量素子に周囲温度に応じた制御電圧を印加して温度変化による発振回路の発振周波数の変動を補償するため、３次関数発生回路及び記憶素子部により温度補償回路部が設けられており、３次関数発生回路には、温度センサが接続されている。
この温度センサは、検出した温度と、温度センサに印加させる電圧値とに基づいて生成される温度データ信号（電圧値）が３次関数発生回路に出力される構成となっている。
集積回路素子２４０は、素子搭載部材２１０の第２の凹部空間Ｋ２内に露出した基板部２１０ａに形成された集積回路素子搭載パッド２１３に半田等の導電性接合材を介して搭載されている。 As shown in FIGS. 5 and 6, the integrated circuit element 240 is provided with an oscillation circuit or the like that generates an oscillation output from the piezoelectric vibration element 120 on the circuit formation surface, and an output signal generated by the oscillation circuit. Is output to the outside of the piezoelectric oscillator 200 via the external connection electrode terminal 212 and used as a reference signal such as a clock signal, for example.
In addition, in the integrated circuit element 240, in order to compensate the fluctuation of the oscillation frequency of the oscillation circuit due to the temperature change by applying the control voltage according to the ambient temperature to the variable capacitance element, the temperature is generated by the cubic function generating circuit and the storage element unit. A compensation circuit unit is provided, and a temperature sensor is connected to the cubic function generation circuit.
This temperature sensor is configured to output a temperature data signal (voltage value) generated based on the detected temperature and a voltage value applied to the temperature sensor to a cubic function generation circuit.
The integrated circuit element 240 is mounted on the integrated circuit element mounting pad 213 formed on the substrate portion 210a exposed in the second recessed space K2 of the element mounting member 210 via a conductive bonding material such as solder.

図５及び図６示すように、素子搭載部材２１０は、基板部２１０ａと、枠部２１０ｂと、圧電振動素子搭載パッド２１１と、外部接続用電極端子２１２と、集積回路素子搭載パッド２１３と、封止部ＨＢと、段差部ＤＢとで主に構成されている。また、素子搭載部材２１０はシリコンから構成されている。
素子搭載部材２１０の基板部２１０ａの他方の主面に枠部２１０ｂが設けられて、第２の凹部空間Ｋ２が形成されている。
素子搭載部材２１０の基板部２１０ａの一方の主面の外周を囲繞するように設けられた封止部ＨＢと後述する蓋部材１３０とが接合される。
段差部ＤＢは、前記封止部ＨＢよりも内側を囲繞するように、素子搭載部材２１０の基板部２１０ａの一方の主面に設けられている。この段差部ＤＢ及び封止部ＨＢは、第１の実施形態の封止部・段差部形成工程により設けられる。
また、２個一対の圧電振動素子搭載パッド２１１は、囲むように設けられている前記段差部ＤＢよりも内側の素子搭載部材２１０の主面に設けられている。
また、素子搭載部材２１０の基板部２１０ａの一方の主面には、２個一対の圧電振動素子搭載パッド２１１が設けられ、前記素子搭載部材２１０の枠部２１０ｂの他方の主面の４隅には、外部接続用電極端子２１２が設けられている。
図５及び図６に示すように、第２の凹部空間Ｋ２内で露出した基板部２１０ａの他方の主面には、複数の集積回路素子搭載パッド２１３と２個一対の圧電振動素子測定用パッド（図示せず）が形成されている。
この圧電振動素子１２０は、第１の実施形態の圧電振動素子搭載工程により、素子搭載部材２１０の圧電振動素子搭載パッド１１１に搭載される。
この状態で、第１の実施形態の圧電振動素子固着工程を行い、導電性接着剤ＤＳを硬化させることで、圧電振動素子１２０を圧電振動素子搭載パッド２１１に固着させる。 As shown in FIGS. 5 and 6, the element mounting member 210 includes a substrate part 210a, a frame part 210b, a piezoelectric vibration element mounting pad 211, an external connection electrode terminal 212, an integrated circuit element mounting pad 213, a sealing member. It is mainly comprised by the stop part HB and level | step-difference part DB. The element mounting member 210 is made of silicon.
A frame portion 210b is provided on the other main surface of the substrate portion 210a of the element mounting member 210 to form a second recessed space K2.
A sealing portion HB provided so as to surround the outer periphery of one main surface of the substrate portion 210a of the element mounting member 210 and a lid member 130 described later are joined.
The step portion DB is provided on one main surface of the substrate portion 210a of the element mounting member 210 so as to surround the inside of the sealing portion HB. The step portion DB and the sealing portion HB are provided by the sealing portion / step portion forming step of the first embodiment.
The two pairs of piezoelectric vibration element mounting pads 211 are provided on the main surface of the element mounting member 210 inside the stepped portion DB provided so as to surround.
In addition, two pairs of piezoelectric vibration element mounting pads 211 are provided on one main surface of the substrate portion 210a of the element mounting member 210, and are formed at the four corners of the other main surface of the frame portion 210b of the element mounting member 210. Are provided with external connection electrode terminals 212.
As shown in FIGS. 5 and 6, a plurality of integrated circuit element mounting pads 213 and two pairs of piezoelectric vibration element measurement pads are provided on the other main surface of the substrate portion 210 a exposed in the second recess space K <b> 2. (Not shown) is formed.
The piezoelectric vibration element 120 is mounted on the piezoelectric vibration element mounting pad 111 of the element mounting member 210 by the piezoelectric vibration element mounting step of the first embodiment.
In this state, the piezoelectric vibration element fixing step of the first embodiment is performed, and the conductive adhesive DS is cured to fix the piezoelectric vibration element 120 to the piezoelectric vibration element mounting pad 211.

図５及び図６に示すように、段差部ＤＢは、封止部ＨＢよりも内側を囲繞するように設けられている。つまり、段差部ＤＢは、圧電振動素子搭載パッド２１１よりも外側で、封止部ＨＢよりも内側を囲むようにして設けられている。
また、封止部ＨＢの厚みは、例えば２０〜３０μｍであり、段差部ＤＢの厚みは、例えば３５〜１００μｍである。つまり、段差部ＤＢの厚みは、封止部ＨＢの厚みよりも厚くなっている。
また、蓋部材１３０は、第１の実施形態の蓋部材接合工程により、素子搭載部材２１０の基板部２１０ａの封止部ＨＢに接合される。その後、集積回路素子２４０を第２の凹部空間Ｋ２内の集積回路素子搭載パッド２１３に搭載する集積回路搭載工程を行う。これにより、発振回路を有した圧電デバイスを製造することができる。 As shown in FIG.5 and FIG.6, level | step difference part DB is provided so that the inner side may be enclosed rather than the sealing part HB. That is, the stepped portion DB is provided outside the piezoelectric vibration element mounting pad 211 and surrounding the inside of the sealing portion HB.
Moreover, the thickness of the sealing part HB is 20-30 micrometers, for example, and the thickness of level | step-difference part DB is 35-100 micrometers, for example. That is, the thickness of the stepped portion DB is larger than the thickness of the sealing portion HB.
Further, the lid member 130 is joined to the sealing portion HB of the substrate portion 210a of the element mounting member 210 by the lid member joining step of the first embodiment. Thereafter, an integrated circuit mounting process is performed for mounting the integrated circuit element 240 on the integrated circuit element mounting pad 213 in the second recessed space K2. Thereby, a piezoelectric device having an oscillation circuit can be manufactured.

このように本発明の第２の実施形態に係る圧電デバイス２００を構成しても、第１の実施形態と同様に、圧電振動素子１２０が段差部ＤＢに接触することがないため、発振周波数の変動を防ぐことができる。つまり、圧電発振器２００でも実施することが可能である。   Even when the piezoelectric device 200 according to the second embodiment of the present invention is configured as described above, the piezoelectric vibration element 120 does not contact the stepped portion DB as in the first embodiment. Variations can be prevented. In other words, the piezoelectric oscillator 200 can also be implemented.

尚、本発明は前記実施形態に限定されるものではなく、本発明の要旨を逸脱しない範囲において種々の変更、改良等が可能である。
例えば、前記した本実施形態では、圧電振動素子を構成する圧電素材として水晶を用いた場合を説明したが、他の圧電素材として、ニオブ酸リチウム、タンタル酸リチウムまたは、圧電セラミックスを圧電素材として用いた圧電振動素子でも構わない。
また、前記した本実施形態では、封止部ＨＢ及び段差部ＤＢの感光性ポリマー材ＫＰを露光し、封止部ＨＢ及び段差部ＤＢ以外の未露光箇所を現像することで、未露光箇所の感光性ポリマー材を除去し、封止部ＨＢと段差部ＤＢを同時に形成していたが、封止部ＨＢ及び段差部ＤＢ以外の感光性ポリマー材ＫＰを露光し、封止部ＨＢ及び段差部ＤＢとなる未露光箇所を現像することで、露光箇所の感光性ポリマー材を除去し、封止部ＨＢと段差部ＤＢを同時に形成するようにしても構わない。 In addition, this invention is not limited to the said embodiment, A various change, improvement, etc. are possible in the range which does not deviate from the summary of this invention.
For example, in the above-described embodiment, the case where quartz is used as the piezoelectric material constituting the piezoelectric vibration element has been described. However, as other piezoelectric materials, lithium niobate, lithium tantalate, or piezoelectric ceramics is used as the piezoelectric material. The piezoelectric vibration element may be used.
Further, in the present embodiment described above, the photosensitive polymer material KP of the sealing portion HB and the stepped portion DB is exposed, and unexposed portions other than the sealing portion HB and the stepped portion DB are developed, so The photosensitive polymer material was removed and the sealing portion HB and the stepped portion DB were formed at the same time. However, the photosensitive polymer material KP other than the sealing portion HB and the stepped portion DB was exposed to expose the sealing portion HB and the stepped portion. By developing the unexposed portion that becomes DB, the photosensitive polymer material at the exposed portion may be removed, and the sealing portion HB and the stepped portion DB may be formed simultaneously.

１１０、２１０・・・素子搭載部材
２１０ａ・・・基板部
２１０ｂ・・・枠部
Ｋ１・・・凹部空間（第１の凹部空間）
１１１、２１１・・・圧電振動素子搭載パッド
１１２、２１２・・・外部接続用電極端子
２１３・・・集積回路素子搭載パッド
Ｋ２・・・第２の凹部空間
１２０・・・圧電振動素子
１２１・・・水晶素板
１２２・・・励振用電極
１２３・・・先端部
１２４・・・引き出し電極
１３０・・・蓋部材
１３０ａ・・・蓋本体部
１３０ｂ・・・壁部
１３０ｃ・・・鍔部
２４０・・・集積回路素子
ＤＳ・・・導電性接着剤
１００、２００・・・圧電デバイス
ＨＢ・・・封止部
ＤＢ・・・段差部
ＫＰ・・・感光性ポリマー材 110, 210: Element mounting member 210a: Substrate part 210b: Frame part K1: Recessed space (first recessed space)
111, 211 ... Piezoelectric vibration element mounting pad 112,212 ... External connection electrode terminal 213 ... Integrated circuit element mounting pad K2 ... Second recess space 120 ... Piezoelectric vibration element 121 ... -Crystal base plate 122 ... Excitation electrode 123 ... Tip part 124 ... Lead electrode 130 ... Lid member 130a ... Lid body part 130b ... Wall part 130c ... Gutter 240- ..Integrated circuit element DS ... conductive adhesive 100, 200 ... piezoelectric device HB ... sealed portion DB ... stepped portion KP ... photosensitive polymer material

Claims (2)

２個一対の圧電振動素子搭載パッドが一方の主面に設けられている素子搭載部材の一方の主面の外周を囲繞するように設けられている封止部と、前記封止部よりも内側を囲繞するように設けられている段差部とを感光性ポリマー材により形成する封止部・段差部形成工程と、
導電性接着剤によって前記２個一対の圧電振動素子搭載パッドに前記圧電振動素子を搭載する圧電振動素子搭載工程と、
硬化炉の内部空間に前記素子搭載部材を収容し、前記導電性接着剤を加熱硬化させ、前記圧電振動素子搭載パッドと前記圧電振動素子とを導通固着する圧電振動素子固着工程と、
蓋部材と前記素子搭載部材の前記封止部とを接合する蓋部材接合工程とを含むことを特徴とする圧電デバイスの製造方法。 A sealing portion provided so as to surround the outer periphery of one main surface of the element mounting member provided with two pairs of piezoelectric vibration element mounting pads on one main surface, and inside the sealing portion And a stepped portion forming step for forming a stepped portion provided so as to surround the photosensitive polymer material,
A piezoelectric vibration element mounting step of mounting the piezoelectric vibration element on the two pairs of piezoelectric vibration element mounting pads by a conductive adhesive;
A piezoelectric vibration element fixing step of accommodating the element mounting member in an internal space of a curing furnace, heat-curing the conductive adhesive, and conductively fixing the piezoelectric vibration element mounting pad and the piezoelectric vibration element;
A method for manufacturing a piezoelectric device, comprising: a lid member joining step for joining the lid member and the sealing portion of the element mounting member. 集積回路素子を素子搭載部材の集積回路素子搭載パッドに搭載する集積回路素子搭載工程を、蓋部材接合工程の後に行うことを特徴とする請求項１記載の圧電デバイスの製造方法。   2. The method of manufacturing a piezoelectric device according to claim 1, wherein the integrated circuit element mounting step of mounting the integrated circuit element on the integrated circuit element mounting pad of the element mounting member is performed after the lid member bonding step.
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