JP5320165B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP5320165B2 JP5320165B2 JP2009127874A JP2009127874A JP5320165B2 JP 5320165 B2 JP5320165 B2 JP 5320165B2 JP 2009127874 A JP2009127874 A JP 2009127874A JP 2009127874 A JP2009127874 A JP 2009127874A JP 5320165 B2 JP5320165 B2 JP 5320165B2
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Description
前記半導体素子は、
電極パッドと、
電極パッド上に設けられたバンプとを備え、
前記半導体キャリア基板は、
基板電極を備え、
前記バンプは伝導性微細粒子の集合体から構成され、多孔体の空間部が設けられ、当該バンプは前記半田によって前記基板電極に物理的かつ電気的に接続されると共に、当該接続に供せられない半田は前記空間部に受容されている半導体装置であり、
前記バンプは、前記電極パッドに垂直に設けられた筒状形状であり、
前記筒状形状の中心に、先端が開口した柱状の空洞を有し、
前記柱状の空洞と前記筒状形状のバンプの外周側面とを結ぶ開口部を有している。
先ず、図1、図2、および図3を参照して、本発明の第1の実施の形態に係る半導体装置SCAについて説明する。なお、以降の説明において、同一構成要素には同じ符合を付して詳細な説明を省く。図1は半導体装置SCAの断面を示し、図2は図1におけるA部を拡大して示す。図1および図2に示すように、半導体装置SCA1は、半導体素子3および半導体キャリア基板4が互いに接合されて構成されている。半導体素子3の主面上には複数の電極パッド1が形成され、電極パッド1上にはバンプ2aが形成されている。
ンプ2aが表示されている。バンプ2aの外形は、基本的に上述のバンプ2と類似している。バンプ2aの表面ないし内部には空間部Sa(作図上の都合により図示せず)が設けられているポーラス(多孔体)構造を有する。この空間部Saは、バンプ2aと基板電極9との接合に必要とされる以上の余分な半田6を受容して、隣接する電極(電極パッド1や基板電極9)等に不用意に接続させないように、設けられているものである。
4との間に形成された空隙に封止樹脂7が供給される。封止樹脂7は、半導体素子3を保護するための封止機能を有するものが選ばれる。すなわち、耐湿性、耐マイグレーション性、外力に対する十分な強度、および電気絶縁性等の封止材として満足できる性能を有するものでなければならない。このような樹脂としては、代表的なものにエポキシ系の樹脂やポリイミド系の樹脂やシリコーン系の樹脂などが挙げられる。
以下に、図4を参照して、本発明の第2の実施の形態に係る半導体装置について説明する。本実施の形態にかかる半導体装置SCA2は、バンプ2aがバンプ2bに交換されている点を除いて、上述の半導体装置SCA1と同様に構成されている。よって、以降バンプ2bについて重点的に説明する。
および現像の処理により所望の形状のマスキング処理を行ったウェハに電解めっきにて形成される。なお、所望の形状のマスクを用いた印刷や光造形によりバンプ2bを形成しても構わない。
図5を参照して、本発明の第3の実施の形態に係る半導体装置について説明する。本実施の形態にかかる半導体装置SCA3は、バンプ2bがバンプ2cに交換されている点を除いて、上述の半導体装置SCA2と同様に構成されている。よって、以降バンプ2cについて重点的に説明する。
rは、エア抜きの機能を満たすのであれば、溝状の切れ目ではなく、バンプ2cの付け根部分に設けられた穴状のパスであっても構わない。また、半径方向溝部Crの数および位置も、任意に定めることができる。
1 電極パッド
2、2a、2b、2b1、2b2、2b3,2c、2c1、2c2 バンプ
3 半導体素子
4 半導体キャリア基板
5 伝導性微細粒子
6 半田
7 封止樹脂
8 外部端子
9 基板電極
Sa、Sb1、Sb2、Sb3、Sc、Sc1、Sc2 空間部
Cc 筒状空洞部
Cr 半径方向溝部
Claims (3)
- 半導体素子が半田により、半導体キャリア基板にフリップチップ実装されて成る半導体装置であって、
前記半導体素子は、
電極パッドと、
前記電極パッド上に設けられたバンプとを備え、
前記半導体キャリア基板は、
基板電極を備え、
前記バンプは伝導性微細粒子の集合体から構成され、多孔体の空間部が設けられ、当該バンプは前記半田によって前記基板電極に物理的かつ電気的に接続されると共に、当該接続に供せられない半田は前記空間部に受容されている半導体装置であり、
前記バンプは、前記電極パッドに垂直に設けられた筒状形状であり、
前記筒状形状の中心に、先端が開口した柱状の空洞を有し、
前記柱状の空洞と前記筒状形状のバンプの外周側面とを結ぶ開口部を有していることを特徴とする半導体装置。 - 前記開口部が、前記筒状形状のバンプの対向する2箇所に設けられた請求項1に記載の半導体装置。
- 半導体素子が半田により、半導体キャリア基板にフリップチップ実装されて成る半導体装置であって、
前記半導体素子は、
電極パッドと、
前記電極パッド上に設けられたバンプとを備え、
前記半導体キャリア基板は、
基板電極を備え、
前記バンプは伝導性微細粒子の集合体から構成され、多孔体の空間部が設けられ、当該バンプは前記半田によって前記基板電極に物理的かつ電気的に接続されると共に、当該接続に供せられない半田は前記空間部に受容されている半導体装置であり、
前記バンプは、前記電極パッドに垂直に設けられた円筒状形状であり、
前記円筒状形状のバンプの外周側面に3つ以上の扇柱形状の開口部を、等間隔で有することを特徴とする半導体装置。
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US11011484B2 (en) | 2019-09-06 | 2021-05-18 | Kioxia Corporation | Semiconductor device having first and second terminals |
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