JP5311710B2 - 半導体構成素子及び半導体構成素子の製造方法 - Google Patents
半導体構成素子及び半導体構成素子の製造方法 Download PDFInfo
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- JP5311710B2 JP5311710B2 JP2005241702A JP2005241702A JP5311710B2 JP 5311710 B2 JP5311710 B2 JP 5311710B2 JP 2005241702 A JP2005241702 A JP 2005241702A JP 2005241702 A JP2005241702 A JP 2005241702A JP 5311710 B2 JP5311710 B2 JP 5311710B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18388—Lenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/14—External cavity lasers
- H01S5/141—External cavity lasers using a wavelength selective device, e.g. a grating or etalon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/108—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using non-linear optical devices, e.g. exhibiting Brillouin or Raman scattering
- H01S3/109—Frequency multiplication, e.g. harmonic generation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/041—Optical pumping
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18383—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with periodic active regions at nodes or maxima of light intensity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4031—Edge-emitting structures
- H01S5/4056—Edge-emitting structures emitting light in more than one direction
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Description
両ミラー間には、ビームフィールドを形成することができ、このビームフィールドは、活性領域内で励起して放射することによって、レーザビーム用に増幅することができる。
2 活性領域
3 ミラー構造
4 担体
5 窓
8 応力固定層
9 安定化層
10 外部冷却体
11 外部ミラー
12 ポンピングビーム
13 ビーム
16 ノンリニア光学素子
31 第1の層
32 第2の層
100 半導体層列
110 コーティング
120 ポンピングビーム源
160 周波数変換されたビーム
400 担体層
600 成形要素
601 部分領域
800 応力固定層
900 安定化層
Claims (25)
- 半導体基体(1)を有する半導体構成素子において、
当該の半導体基体は、当該半導体基体内にモノリシックに集積された湾曲ミラー(3)を有しており、
当該の半導体基体(1)は、担体(4,400)上に配置されている形式の半導体構成素子において、
応力によって前記半導体基体(1)を湾曲させる応力固定層(8,800)、または
湾曲した成形要素(600)が、前記の担体(4,400)とは反対側を向いた半導体基体(1)の面に配置されており、
前記の担体は、窓(5)を有しており、
当該の窓用に担体の一部が取り除かれている
ことを特徴とする半導体構成素子。 - 前記の半導体基体(1)及び湾曲ミラー(3)は、同様の湾曲を有している、
請求項1記載の半導体構成素子。 - 前記の湾曲ミラー(3)は、ブラッグミラーである、
請求項1又は2記載の半導体構成素子。 - 前記の担体(4)は、平坦(400)である、
請求項1〜3迄のいずれか1記載の半導体構成素子。 - 前記の半導体基体(1)は、湾曲ミラー(3)に対して湾曲した少なくとも1つの湾曲部分領域と、少なくとも1つの平坦部分領域を有している、
請求項1〜4迄の何れか1記載の半導体構成素子。 - 前記の湾曲部分領域は、垂直方向に見て窓(5)と重なっている、
請求項5記載の半導体構成素子。 - 前記の応力固定層(8,800)は、金属を含有する、
請求項1〜6迄の何れか1記載の半導体構成素子。 - 前記の半導体基体(1)は、ビーム形成用に設けられた活性領域(2)を有している、
請求項1〜7迄の何れか1記載の半導体構成素子。 - 前記の半導体構成素子は、表面放射半導体構成素子である、
請求項8記載の半導体構成素子。 - 前記の半導体構成素子は、外部共振器を用いて、レーザビーム(13)を形成するために設けられており、
当該の外部共振器を構成する外部ミラー(11)は、活性領域(2)の、湾曲ミラー(3)とは反対側の面に配置されている、
請求項8又は9記載の半導体構成素子。 - 前記の外部ミラー(11)は平坦に形成されている、
請求項10記載の半導体構成素子。 - 少なくとも1つのポンピングビーム源(120)によってビーム形成用の前記の活性領域(2)が、光ポンピングされる、
請求項8から11迄の何れか1記載の半導体構成素子。 - 前記のポンピングビーム源(120)及び半導体基体(1)は、共通の成長基板上にモノリシックに集積されている、
請求項12記載の半導体構成素子。 - 前記の外部共振器内に、ノンリニア光学素子(16)が、活性領域内で形成されたビーム(13)の周波数変換のために設けられている、
請求項8から13迄の何れか1記載の半導体構成素子。 - 湾曲半導体基体を有する半導体構成素子の製造方法であって、
a)担体(4,400)に配置される半導体基体(1,100)の形成、
b)当該半導体基体の湾曲、
c)当該半導体構成素子の製造完成
の各ステップを有する製造方法において、
前記のステップb)においてまず
担体(4,400)の一部を除去することによって担体(4,400)に窓(5)を形成し、
応力固定層(8,800)を湾曲要素として、半導体基体(1,100)の、前記担体とは反対側の面上に堆積し、
前記応力固定層(8,800)により、前記応力固定層を用いて生じた応力又は引張応力を介して前記半導体基体(1,100)を湾曲させる、
ことを特徴とする
製造方法。 - 前記の応力固定層(8,800)は、金属又は合金を含む、
請求項15記載の方法。 - 前記の応力固定層(8,800)は、半導体基体(1,100)上にスパッタリングされるか又は蒸着される、
請求項15または16記載の方法。 - 前記の応力固定層(8,800)は、担体(4,400)とは反対側の半導体基体(1,100)の面上に堆積されている、
請求項15から17迄の何れか1記載の方法。 - 前記の応力固定層(8,800)によって形成される湾曲部を、該応力固定層上に堆積された安定化層(9,900)によって機械的に安定化させる、
請求項15から18迄の何れか1記載の方法。 - 前記の安定化層(9,900)を、直流電流により堆積する、
請求項19記載の方法。 - 湾曲半導体基体を有する半導体構成素子の製造方法であって、
a)担体(4,400)に配置される半導体基体(1,100)の形成、
b)当該半導体基体の湾曲、
c)当該半導体構成素子の製造完成
の各ステップを有する製造方法において、
前記のステップb)においてまず
担体の一部を除去することによって担体(4,400)に窓(5)を形成し、
前記の半導体基体(1,100)の、前記の担体(4,400)とは反対側の面に、成形要素(600)を湾曲要素として設け、
ただし該成形要素は、半導体基体の所望の湾曲にしたがって形成した領域を有しており、
前記の半導体基体を該領域に押し付けるか、又は当該領域が半導体基体に押し付けられる、
ことを特徴とする
製造方法。 - 前記の担体(4,400)は、成長基板を有しており、
該成長基板上に半導体基体(1,100)をエピタキシャルによって成長させる、
請求項15から21までのいずれか1項記載の方法。 - 前記の窓は、担体(4,400)の、半導体基体(1,100)とは反対側の面から前記半導体基体に迄達している、
請求項15から22までのいずれか1項記載の方法。 - 前記の半導体基体(1,100)と担体(4,400)の層とから多数の半導体構成素子を同時に製造可能である、
請求項15から23迄の何れか1記載の方法。 - 請求項1から14迄の何れか1記載の半導体構成素子を作製するために使用される、
請求項15から24迄の何れか1記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
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DE102004040762 | 2004-08-23 | ||
DE102004040762.2 | 2004-08-23 | ||
DE102004052686.9 | 2004-10-29 | ||
DE102004052686A DE102004052686A1 (de) | 2004-08-23 | 2004-10-29 | Halbleiterbauelement mit einem gekrümmten Spiegel und Verfahren zum Herstellen eines Halbleiterbauelements mit einem gekrümmten Halbleiterkörper |
Publications (3)
Publication Number | Publication Date |
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JP2006060239A JP2006060239A (ja) | 2006-03-02 |
JP2006060239A5 JP2006060239A5 (ja) | 2008-06-26 |
JP5311710B2 true JP5311710B2 (ja) | 2013-10-09 |
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JP2005241702A Expired - Fee Related JP5311710B2 (ja) | 2004-08-23 | 2005-08-23 | 半導体構成素子及び半導体構成素子の製造方法 |
Country Status (4)
Country | Link |
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US (1) | US20070246721A1 (ja) |
EP (1) | EP1633026B1 (ja) |
JP (1) | JP5311710B2 (ja) |
DE (1) | DE102004052686A1 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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US8867582B2 (en) | 2012-04-04 | 2014-10-21 | Osram Opto Semiconductors Gmbh | Laser diode assembly |
US9008138B2 (en) | 2012-04-12 | 2015-04-14 | Osram Opto Semiconductors Gmbh | Laser diode device |
DE102012103160A1 (de) * | 2012-04-12 | 2013-10-17 | Osram Opto Semiconductors Gmbh | Laserdiodenvorrichtung |
JP6308389B2 (ja) * | 2014-06-12 | 2018-04-11 | 株式会社リコー | レーザ媒体、レーザ装置、レーザ加工機、表示装置及びレーザ媒体の製造方法 |
DE112018003684T5 (de) * | 2017-07-18 | 2020-05-14 | Sony Corporation | Lichtemittierendes element und array aus lichtemittierenden elementen |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4784722A (en) * | 1985-01-22 | 1988-11-15 | Massachusetts Institute Of Technology | Method forming surface emitting diode laser |
DE4135813C2 (de) * | 1990-10-31 | 1997-11-06 | Toshiba Kawasaki Kk | Oberflächenemittierende Halbleiter-Laservorrichtung |
JP3219823B2 (ja) * | 1991-02-04 | 2001-10-15 | 株式会社東芝 | 半導体発光素子 |
JP3244529B2 (ja) * | 1992-04-16 | 2002-01-07 | アジレント・テクノロジーズ・インク | 面発光型第2高調波生成素子 |
US5461637A (en) * | 1994-03-16 | 1995-10-24 | Micracor, Inc. | High brightness, vertical cavity semiconductor lasers |
JPH08222786A (ja) * | 1995-02-15 | 1996-08-30 | Matsushita Electric Ind Co Ltd | 電子線励起レーザ、電子線励起レーザの製造方法および電子線励起レーザの駆動方法 |
JP3691544B2 (ja) * | 1995-04-28 | 2005-09-07 | アジレント・テクノロジーズ・インク | 面発光レーザの製造方法 |
JPH0964462A (ja) * | 1995-08-24 | 1997-03-07 | Nec Corp | 面発光レーザ装置およびその製造方法 |
US5724375A (en) * | 1996-07-17 | 1998-03-03 | W. L. Gore & Associates, Inc. | Vertical cavity surface emitting laser with enhanced second harmonic generation and method of making same |
JPH10200200A (ja) * | 1997-01-06 | 1998-07-31 | Canon Inc | 面発光型半導体レーザ |
US6243407B1 (en) * | 1997-03-21 | 2001-06-05 | Novalux, Inc. | High power laser devices |
US6438149B1 (en) * | 1998-06-26 | 2002-08-20 | Coretek, Inc. | Microelectromechanically tunable, confocal, vertical cavity surface emitting laser and fabry-perot filter |
JP3944677B2 (ja) * | 1999-11-30 | 2007-07-11 | セイコーエプソン株式会社 | 面発光型半導体レーザの製造方法 |
JP3443066B2 (ja) * | 2000-03-10 | 2003-09-02 | 株式会社国際電気通信基礎技術研究所 | 半導体装置およびその製造方法 |
CA2328637A1 (en) * | 2000-12-15 | 2002-06-15 | Richard D. Clayton | Lateral optical pumping of vertical cavity surface emitting laser |
US20020163688A1 (en) * | 2001-03-26 | 2002-11-07 | Zuhua Zhu | Optical communications system and vertical cavity surface emitting laser therefor |
US20020176473A1 (en) * | 2001-05-23 | 2002-11-28 | Aram Mooradian | Wavelength selectable, controlled chirp, semiconductor laser |
US6669367B2 (en) * | 2001-10-10 | 2003-12-30 | Applied Optoelectronics, Inc. | Optical fiber with mirror for semiconductor laser |
JP2003305696A (ja) * | 2002-02-13 | 2003-10-28 | Advanced Telecommunication Research Institute International | 半導体装置およびその製造方法 |
US6930376B2 (en) * | 2002-02-13 | 2005-08-16 | Atr Advanced Telecommunications Research Institute International | Semiconductor device having a folded layer structure |
US6628695B1 (en) * | 2002-03-07 | 2003-09-30 | The Board Of Trustees Of The Leland Stanford Junior University | Monolithically integrated mode-locked vertical cavity surface emitting laser (VCSEL) |
US6806110B2 (en) * | 2002-05-16 | 2004-10-19 | Agilent Technologies, Inc. | Monolithic multi-wavelength vertical-cavity surface emitting laser array and method of manufacture therefor |
-
2004
- 2004-10-29 DE DE102004052686A patent/DE102004052686A1/de not_active Ceased
-
2005
- 2005-07-22 EP EP05016014.2A patent/EP1633026B1/de not_active Expired - Fee Related
- 2005-08-23 JP JP2005241702A patent/JP5311710B2/ja not_active Expired - Fee Related
- 2005-08-23 US US11/209,558 patent/US20070246721A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
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EP1633026A1 (de) | 2006-03-08 |
JP2006060239A (ja) | 2006-03-02 |
DE102004052686A1 (de) | 2006-03-02 |
US20070246721A1 (en) | 2007-10-25 |
EP1633026B1 (de) | 2016-09-07 |
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