JP5311338B2 - 窒化物半導体発光素子 - Google Patents
窒化物半導体発光素子 Download PDFInfo
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- JP5311338B2 JP5311338B2 JP2008312477A JP2008312477A JP5311338B2 JP 5311338 B2 JP5311338 B2 JP 5311338B2 JP 2008312477 A JP2008312477 A JP 2008312477A JP 2008312477 A JP2008312477 A JP 2008312477A JP 5311338 B2 JP5311338 B2 JP 5311338B2
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- nitride semiconductor
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- quantum barrier
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- 150000004767 nitrides Chemical class 0.000 title claims description 84
- 239000004065 semiconductor Substances 0.000 title claims description 84
- 230000004888 barrier function Effects 0.000 claims description 74
- 239000000758 substrate Substances 0.000 claims description 9
- 238000010586 diagram Methods 0.000 description 19
- 238000000034 method Methods 0.000 description 13
- 229910002704 AlGaN Inorganic materials 0.000 description 10
- 230000005428 wave function Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Description
141、241、341 量子井戸層
142、242、342 量子障壁層
142a、242a、342a InxGa(1−x)N層
142b、242b、342c AlyGa(1−y)N層
342b GaN層
Claims (5)
- 基板上に形成されたn型窒化物半導体層と、
前記n型窒化物半導体層上に形成され、量子障壁層及び量子井戸層から成る活性層と、
前記活性層上に形成されたp型窒化物半導体層と、を含み、
前記複数の量子井戸層は、InzGa(1−z)N(0<x<z<1)から成り、
前記量子障壁層は、複数のInxGa(1−x)N層(0<x<1)及び少なくともひとつ以上のAlyGa(1−y)N層(0<y<1)を含み、前記複数のInxGa(1−x)N層の間にAlyGa(1−y)N層が積層された構造を有し、
前記複数のIn x Ga (1−x) N層と前記Al y Ga (1−y) N層のそれぞれの間に形成されたGaN層を含んで少なくとも5層の多層構造を有し、
前記量子障壁層を成すInxGa(1−x)N層及びAlyGa(1−y)N層は各々、0.5〜10nmの厚さを有し、
前記複数のInxGa(1−x)N層は、前記量子井戸層より大きく、前記AlyGa(1−y)N層より低いエネルギーバンドキャップを有し、
前記量子障壁層は、2〜15nmの厚さを有し、前記量子井戸層は、1〜15nmの厚さを有することを特徴とする窒化物半導体発光素子。 - 前記量子障壁層は、前記複数のInxGa(1−x)N層の間にAlyGa(1−y)N層が積層され、InxGa(1−x)N層とAlyGa(1−y)N層が交互に2回以上反復して積層された超格子構造を有することを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記量子障壁層を成すInxGa(1−x)N層及びAlyGa(1−y)N層は各々、0.3〜3nmの厚さを有することを特徴とする請求項2に記載の窒化物半導体発光素子。
- 前記複数のInxGa(1−x)N層は、前記量子井戸層より高く、前記GaN層より低いエネルギーバンドキャップを有し、前記GaN層は前記AlyGa(1−y)N層より低いエネルギーバンドキャップを有することを特徴とする請求項1に記載の窒化物半導体発光素子。
- 前記量子障壁層を構成するInxGa(1−x)N層、AlyGa(1−y)N層及びGaN層は各々、0.5〜10nmの厚さを有することを特徴とする請求項1に記載の窒化物半導体発光素子。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2008-0043638 | 2008-05-09 | ||
KR1020080043638A KR20090117538A (ko) | 2008-05-09 | 2008-05-09 | 질화물 반도체 발광소자 |
Publications (2)
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JP2009272606A JP2009272606A (ja) | 2009-11-19 |
JP5311338B2 true JP5311338B2 (ja) | 2013-10-09 |
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JP2008312477A Active JP5311338B2 (ja) | 2008-05-09 | 2008-12-08 | 窒化物半導体発光素子 |
Country Status (4)
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US (1) | US8274069B2 (ja) |
JP (1) | JP5311338B2 (ja) |
KR (1) | KR20090117538A (ja) |
TW (1) | TWI466316B (ja) |
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KR101007087B1 (ko) * | 2009-10-26 | 2011-01-10 | 엘지이노텍 주식회사 | 발광소자 및 그 제조방법 |
KR101646255B1 (ko) | 2009-12-22 | 2016-08-05 | 엘지이노텍 주식회사 | 발광 소자, 발광 소자 패키지 및 발광 소자 제조방법 |
JP4940317B2 (ja) * | 2010-02-25 | 2012-05-30 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
CN105161402B (zh) | 2010-04-30 | 2020-08-18 | 波士顿大学理事会 | 具有能带结构电位波动的高效紫外发光二极管 |
EP2408028B1 (en) | 2010-07-16 | 2015-04-08 | LG Innotek Co., Ltd. | Light emitting device |
JP5372045B2 (ja) | 2011-02-25 | 2013-12-18 | 株式会社東芝 | 半導体発光素子 |
JP5744615B2 (ja) * | 2011-04-28 | 2015-07-08 | シャープ株式会社 | 窒化物半導体発光ダイオード素子 |
JP2012243780A (ja) * | 2011-05-13 | 2012-12-10 | Toshiba Corp | 半導体発光素子及びウェーハ |
KR20120138080A (ko) * | 2011-06-14 | 2012-12-24 | 엘지이노텍 주식회사 | 발광 소자 |
US8723189B1 (en) | 2012-01-06 | 2014-05-13 | Trustees Of Boston University | Ultraviolet light emitting diode structures and methods of manufacturing the same |
DE102012104671B4 (de) | 2012-05-30 | 2020-03-05 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer aktiven Zone für einen optoelektronischen Halbleiterchip |
JP5383876B1 (ja) * | 2012-08-01 | 2014-01-08 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
KR101953716B1 (ko) * | 2012-08-23 | 2019-03-05 | 엘지이노텍 주식회사 | 발광소자, 발광 소자 패키지 및 조명 시스템 |
TWI495154B (zh) | 2012-12-06 | 2015-08-01 | Genesis Photonics Inc | 半導體結構 |
CN104253181A (zh) * | 2013-06-26 | 2014-12-31 | 南通同方半导体有限公司 | 一种具有多重垒层led外延结构 |
JP2015038949A (ja) * | 2013-07-17 | 2015-02-26 | 株式会社東芝 | 半導体発光素子及びその製造方法 |
CN103633207A (zh) * | 2013-08-05 | 2014-03-12 | 圆融光电科技有限公司 | 发光二极管的外延生长方法 |
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JP6129051B2 (ja) * | 2013-10-10 | 2017-05-17 | キヤノン株式会社 | 反射鏡、面発光レーザ、レーザ装置、光音響装置及び画像形成装置 |
CN103746053B (zh) * | 2014-01-14 | 2016-08-17 | 圆融光电科技有限公司 | 一种紫光led制备方法、紫光led和芯片 |
JP5861947B2 (ja) * | 2014-02-05 | 2016-02-16 | ウシオ電機株式会社 | 半導体発光素子及びその製造方法 |
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- 2008-05-09 KR KR1020080043638A patent/KR20090117538A/ko active Search and Examination
- 2008-12-08 JP JP2008312477A patent/JP5311338B2/ja active Active
- 2008-12-09 TW TW097147770A patent/TWI466316B/zh active
- 2008-12-12 US US12/333,531 patent/US8274069B2/en active Active
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Publication number | Publication date |
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JP2009272606A (ja) | 2009-11-19 |
TWI466316B (zh) | 2014-12-21 |
KR20090117538A (ko) | 2009-11-12 |
US8274069B2 (en) | 2012-09-25 |
US20090278113A1 (en) | 2009-11-12 |
TW200947756A (en) | 2009-11-16 |
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