JP5309179B2 - 均一なプロセス速度を生成するためのプラズマ処理装置及び結合窓構成 - Google Patents
均一なプロセス速度を生成するためのプラズマ処理装置及び結合窓構成 Download PDFInfo
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- H—ELECTRICITY
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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- H01J37/32467—Material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
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Description
本出願は、以下の同時に出願された米国特許出願に関連している。
「向上したプラズマプロセスシステムおよびそのための方法」と題する出願番号09/439,661(代理人事件番号:LAM1P122/P0527)。
「動的なガス散布制御を用いたプラズマプロセスシステム」と題する出願番号09/470,236(代理人事件番号:LAM1P0123/P0557)。
「プラズマ処理装置用の温度制御システム」と題する出願番号09/439,675(代理人事件番号:LAM1P0124/P0558)。
「プラズマプロセスシステム用の材料およびガス組成」と題する出願番号09/440,794(代理人事件番号:LAM1P0128/P0561)。
「プラズマ量を制御するための方法および装置」と題する出願番号09/439,759(代理人事件番号:LAM1P0129/P0563)。
上記に特定した各出願は、引用によってここに組み込まれる。
絶縁材料から形成される第1の層と、
前記第1の層に接続された第2の層であって、プロセス中において前記プロセスチャンバ内に存在する前記プラズマに対して実質的に抵抗となる材料から形成され、前記プロセスチャンバの内周面の一部を形成する前記第2の層と、
を備え、
前記第1の層および第2の層は、前記アンテナから前記プロセスチャンバ内部への前記第1のRFエネルギの通過を許容するように構成されていることとを備え、
前記第2の層は、100Ω・cmから10000Ω・cmまでの抵抗率を有するSiCから形成され、電気的に浮動するように構成されている、結合窓構成である。
本発明は、一実施の形態において、プラズマを用いて基板を処理するためのプラズマ処理装置に関する。装置は、第1の周波数を有する第1のRF電源を含む。装置は、さらにプロセスチャンバを含む。加えて、装置は、第1のRF電源に動作可能に結合された実質的に円形のアンテナを含む。アンテナは、基板が処理のためにプロセスチャンバ内に配置されるとき、基板によって定義される面の上方に配置される。実質的に円形のアンテナは、第1のRF電源によって生成された第1のRFエネルギを用いて、プロセスチャンバ内に電場を誘起するように構成されている。実質的に円形のアンテナは、第1の面に位置する第1の対の同心状の輪と、第2の面に位置する第2の同心状の輪とを少なくとも含む。第1の対の同心状の輪および第2の対の同心状の輪は、互いに実質的に同一でありかつ対称に配置されている。実質的に円形のアンテナは、プロセスチャンバ内に方位的に対称なプラズマを形成する。
Claims (5)
- プロセスチャンバ内のプラズマを用いて基板を処理するための結合窓構成であって、前記結合窓はアンテナおよび前記プロセスチャンバ間に配置され、前記アンテナはRFエネルギを生成するように構成され、前記生成は前記アンテナおよび前記プラズマ間に容量結合を形成する前記結合窓構成において、
絶縁材料から形成される第1の層と、
前記第1の層に接続された第2の層であって、プロセス中において前記プロセスチャンバ内に存在する前記プラズマに対して実質的に抵抗となる材料から形成され、前記プロセスチャンバの内周面の一部を形成する前記第2の層と、
を備え、
前記第1の層および第2の層は、前記アンテナから前記プロセスチャンバ内部への前記第1のRFエネルギの通過を許容するように構成されていることとを備え、
前記第2の層は、100Ω・cmから10000Ω・cmまでの抵抗率を有するSiCから形成され、電気的に浮動するように構成されている、結合窓構成。 - 請求項1に記載の結合窓構成において、
前記第2の層は、前記生成中に前記アンテナおよび前記プラズマ間に形成される前記容量結合を実質的に抑制するように構成されている結合窓構成。 - 請求項1に記載の結合窓構成において、
前記第1と第2の層は、容量電圧分圧器を構成するように形成されており、
前記容量電圧分圧器は、一定の容量を有する前記第1の層によって形成される上方部分と、下方部分とを含み、
前記下方部分は、点火前の導電性の前記第2の層及びチャンバ壁とで形成され、点火後には前記第2の層及びプラズマで形成される、結合窓構成。 - 請求項1に記載の結合窓構成において、
前記第1の層は、本質的に窒化ケイ素または窒化アルミニウムからなるグループから選択された材料で形成されている結合窓構成。 - 基板を処理するためのプラズマ処理装置であって、
前記処理のために内部でプラズマが点火および維持されるプロセスチャンバと、
前記プロセスチャンバ内にRFエネルギによって電場を生成するよう構成された多層アンテナであって、上側の輪と下側の輪を有し、前記上側の輪および前記下側の輪は、実質的に互いに同一であり、アンテナ軸に関して対称的に配置されている、多層アンテナと、
請求項1〜4のいずれか一項に記載の結合窓構成と、
を備える、プラズマ処理装置。
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US09/440,418 | 1999-11-15 | ||
US09/440,418 US6320320B1 (en) | 1999-11-15 | 1999-11-15 | Method and apparatus for producing uniform process rates |
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JP2011095143A Expired - Lifetime JP5309179B2 (ja) | 1999-11-15 | 2011-04-21 | 均一なプロセス速度を生成するためのプラズマ処理装置及び結合窓構成 |
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EP (1) | EP1230668B1 (ja) |
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KR (1) | KR100826488B1 (ja) |
CN (1) | CN1227710C (ja) |
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JP4758046B2 (ja) | 2011-08-24 |
WO2001045134A3 (en) | 2002-02-07 |
WO2001045134A9 (en) | 2002-11-14 |
WO2001045134A2 (en) | 2001-06-21 |
TW507253B (en) | 2002-10-21 |
CN1423827A (zh) | 2003-06-11 |
AU4902801A (en) | 2001-06-25 |
JP2011175977A (ja) | 2011-09-08 |
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