JP5300509B2 - 画定された不純物勾配を有するひずみ材料層を使用する半導体構造を製作するための方法 - Google Patents
画定された不純物勾配を有するひずみ材料層を使用する半導体構造を製作するための方法 Download PDFInfo
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Description
本発明は、2001年9月21に提出された米国仮特許出願第60/324,325号に対する優先権およびその利益を請求しており、参照によりそっくりそのまま本明細書に組み込まれる。
シリコン(Si)およびゲルマニウム(Ge)に基づいた「仮想基板」は、バルクSi基板に製作されたデバイスと比較した場合に向上した性能を呈する新世代のVLSIデバイスにプラットフォームを提供する。SiGe仮想基板の重要な構成要素は、その平衡格子定数に緩和されたSiGe層である(即ち、それはSiの格子定数より大きい格子定数である)。この緩和されたSiGe層は、Si基板に(例えば、ウエハボンディングまたは直接的エピタクシーにより)、またはSiGe材料の格子定数が層の厚さにわたって徐々に増加する緩和グレーデッドSiGe層の上に直接的に付着され得る。また、SiGe仮想基板は、絶縁体上シリコン(「SOI」)ウエハのようにして、埋込絶縁層も組み込むことができる。これらのプラットフォーム上に高性能なデバイスを製作するために、Si、Ge、またはSiGeからなる薄いひずみ層が、緩和SiGe仮想基板に成長される。結果としての二軸張力または圧縮ひずみは、層の担体移動度を変化させ、高速デバイスまたは低電力デバイスあるいは双方の製作を可能にする。
1.エッジが研磨されたシリコン基板を準備し、
2.最後のGe組成物に対する緩和グレーデッドSiGeバッファ層をシリコン基板上にエピタキシャル堆積させ、
3.均一な組成物を有する緩和SiGeキャップ層を、グレーデッドSiGeバッファ層上にエピタキシャル堆積させ、
4.例えば、化学機械研磨(「CMP」)によりSiGeキャップ層を平坦化し、
5.均一な組成物を有する緩和SiGe再成長層を、SiGeキャップの平坦化された表面上にエピタキシャル堆積させ、および
6.ひずみシリコン層をSiGe再成長層上にエピタキシャル堆積させる。
本発明は、動作上の性能を改善するだけでなく、相互拡散された不純物が相対的に無い1つまたは複数のひずみ材料層を含む半導体構造とデバイス(例えば、FET)を提供する。従って、結果としての半導体構造とデバイスは、ひずみ層の係る不純物の存在から生じる低下した性能を示さない。
例示のために図面に示されるように、本発明は、特有の構造的特徴を有する、例えばFET等の半導体構造またはデバイスにおいて具現化され得る。本発明による半導体構造またはFETは、相互拡散された不純物が相対的に無い1つまたは複数のひずみ材料層を含む。これらのひずみ材料層は、ひずみ層の特定の領域において、実質的にゼロに等しい値を有する少なくとも1つの不純物拡散勾配によって特徴付けられる。従って、半導体構造またはFETは、ひずみ層の特定の部分における係る不純物の存在から生じる低下した性能を示さない。
Claims (18)
- 半導体デバイスを形成する方法であって、
基板にアイソレーション領域を形成し、少なくとも2つの側部において前記アイソレーション領域と境界を接するデバイス活性領域を画定し、
前記デバイス活性領域の上にダミーゲートからなるゲート構造を形成し、前記ゲート構造の下にチャネル領域を画定し、
前記ゲート構造を選択的エッチング処理により除去し、
その後、前記デバイス活性領域の一部の上に半導体材料をエピタキシャル堆積し、前記チャネル領域に不純物濃度の勾配を有するひずみチャネルを形成することを含み、
前記ひずみチャネルの不純物濃度の勾配の不純物が、p形のドーパント、及びn形のドーパントからなる群から選択される少なくとも1種の不純物であり、
前記ひずみチャネルの最上部分の不純物濃度がゼロに等しく、前記ひずみチャネルの不純物濃度が、前記最上部分との境界から前記デバイス活性領域との境界へと進むにつれて、高くなっていく、方法。 - 前記半導体材料がSi、Ge、又はSiGeからなる、請求項1に記載の方法。
- 前記チャネル領域の上にゲート誘電体を形成することを更に含み、
前記ゲート誘電体は、SiO2の誘電率より大きい誘電率を有し、Hfを含む、請求項1に記載の方法。 - 前記半導体材料をエピタキシャル堆積する前に、前記ゲート構造の側壁に隣接した少なくとも1つの絶縁体を形成することを更に含む、請求項1に記載の方法
- 前記ひずみチャネルのひずみが、格子の不整合により引き起こされる、請求項1に記載の方法。
- 前記半導体材料が選択的に堆積される、請求項1に記載の方法。
- 前記半導体材料が、圧縮力によりひずむ、請求項1に記載の方法。
- 前記半導体材料がSiGeからなる、請求項7に記載の方法。
- 前記ひずみチャネルは、圧縮力によりひずみ、Siを含む、請求項1に記載の方法。
- 前記半導体材料のエピタキシャル堆積の前に、前記デバイス活性領域に延長部分の打ち込みを行い、前記チャネル領域に隣接したソース領域およびドレイン領域を画定することを更に含む、請求項1に記載の方法。
- 前記半導体材料のエピタキシャル堆積の前に、前記デバイス活性領域にソース及びドレインの注入を行い、前記チャネル領域に隣接したソース領域およびドレイン領域を画定することを更に含む、請求項1に記載の方法。
- 前記半導体材料のエピタキシャル堆積の後に、前記ソース領域およびドレイン領域にシリサイドを形成することを更に含む、請求項11に記載の方法。
- 前記基板が埋込絶縁層を含む、請求項1に記載の方法。
- 前記半導体材料のエピタキシャル堆積の後に、前記ひずみチャネルの上にゲート電極を形成することを更に含む、請求項1に記載の方法。
- 前記ゲート電極が金属からなる、請求項14に記載の方法。
- 前記ゲート構造がポリシリコンを含む、請求項1に記載の方法。
- 前記少なくとも1つの絶縁体が、誘電体スペーサからなる、請求項4に記載の方法。
- 前記少なくとも1つの絶縁体が、前記ゲート構造の側壁に直接的に形成される、請求項4に記載の方法。
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2002
- 2002-09-20 EP EP02786360A patent/EP1428262A2/en not_active Withdrawn
- 2002-09-20 WO PCT/US2002/030033 patent/WO2003025984A2/en not_active Application Discontinuation
- 2002-09-20 AU AU2002349881A patent/AU2002349881A1/en not_active Abandoned
- 2002-09-20 JP JP2003529509A patent/JP2005504436A/ja active Pending
- 2002-09-20 US US10/251,424 patent/US6831292B2/en not_active Expired - Lifetime
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2004
- 2004-10-25 US US10/972,578 patent/US7884353B2/en active Active
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2007
- 2007-08-30 US US11/847,721 patent/US7776697B2/en not_active Expired - Lifetime
- 2007-08-31 US US11/848,642 patent/US7846802B2/en not_active Expired - Lifetime
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US7884353B2 (en) | 2011-02-08 |
US6831292B2 (en) | 2004-12-14 |
US9281376B2 (en) | 2016-03-08 |
US20050054168A1 (en) | 2005-03-10 |
US7776697B2 (en) | 2010-08-17 |
US8344355B2 (en) | 2013-01-01 |
US20130040433A1 (en) | 2013-02-14 |
US7846802B2 (en) | 2010-12-07 |
US10164015B2 (en) | 2018-12-25 |
WO2003025984A3 (en) | 2003-09-25 |
US20070293003A1 (en) | 2007-12-20 |
US20120086047A1 (en) | 2012-04-12 |
US20030057416A1 (en) | 2003-03-27 |
US9923057B2 (en) | 2018-03-20 |
WO2003025984A2 (en) | 2003-03-27 |
JP2005504436A (ja) | 2005-02-10 |
US20180197954A1 (en) | 2018-07-12 |
EP1428262A2 (en) | 2004-06-16 |
US8722495B2 (en) | 2014-05-13 |
US20160190254A1 (en) | 2016-06-30 |
US20070293009A1 (en) | 2007-12-20 |
JP2009164617A (ja) | 2009-07-23 |
US20140220755A1 (en) | 2014-08-07 |
US8106380B2 (en) | 2012-01-31 |
US20110095363A1 (en) | 2011-04-28 |
AU2002349881A1 (en) | 2003-04-01 |
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