JP5296816B2 - 光半導体装置 - Google Patents
光半導体装置 Download PDFInfo
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- JP5296816B2 JP5296816B2 JP2011015580A JP2011015580A JP5296816B2 JP 5296816 B2 JP5296816 B2 JP 5296816B2 JP 2011015580 A JP2011015580 A JP 2011015580A JP 2011015580 A JP2011015580 A JP 2011015580A JP 5296816 B2 JP5296816 B2 JP 5296816B2
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- 239000004065 semiconductor Substances 0.000 title claims description 183
- 230000003287 optical effect Effects 0.000 title claims description 112
- 239000000758 substrate Substances 0.000 claims description 83
- 229910052751 metal Inorganic materials 0.000 claims description 71
- 239000002184 metal Substances 0.000 claims description 71
- 239000010408 film Substances 0.000 claims description 63
- 239000010409 thin film Substances 0.000 claims description 52
- 230000031700 light absorption Effects 0.000 claims description 51
- 238000009792 diffusion process Methods 0.000 claims description 29
- 230000004888 barrier function Effects 0.000 claims description 22
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 49
- 229910000679 solder Inorganic materials 0.000 description 42
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 20
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 19
- 229910052737 gold Inorganic materials 0.000 description 19
- 239000010931 gold Substances 0.000 description 19
- 230000001788 irregular Effects 0.000 description 16
- 239000013307 optical fiber Substances 0.000 description 11
- 238000007740 vapor deposition Methods 0.000 description 11
- 229910052697 platinum Inorganic materials 0.000 description 10
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 9
- 229910052732 germanium Inorganic materials 0.000 description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 9
- 229910052719 titanium Inorganic materials 0.000 description 9
- 239000010936 titanium Substances 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- 238000009429 electrical wiring Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000000059 patterning Methods 0.000 description 7
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 238000004891 communication Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 230000006872 improvement Effects 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 238000005259 measurement Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 229910001020 Au alloy Inorganic materials 0.000 description 3
- 229910000990 Ni alloy Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1203—Rectifying Diode
- H01L2924/12032—Schottky diode
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
110 導電性半導体基板
112 光吸収層
114 導電性半導体層
116 絶縁膜
118 裏面電極
1182 チタン
1184 白金
1186 金
1187 第1の裏面電極
1188 第2の裏面電極
119 表面電極
120 拡散領域
130 金属半田
132 ボンディングワイヤ
134 電気配線板
136 電気配線
138 リードピン
140 受光部
150 入射光
152 基板内透過光
154 散乱光
156 全反射光
160 入力素子
162 隣接素子
170 クロストーク
171 電子
172 正孔
180 光モジュール
182 筐体
184 窓蓋
190 絶縁膜
Claims (12)
- 導電性半導体基板と、
前記導電性半導体基板上に形成された光吸収層と、
前記光吸収層上に形成された導電性半導体層と
を備えた光半導体装置であって、
前記導電性半導体層が、前記導電性半導体基板と逆の導電型の拡散領域を複数備えることにより、前記光半導体装置には、アレイ状の受光素子が形成されており、
前記導電性半導体基板の底部に鏡面状の薄膜を備え、
前記鏡面状の薄膜は、鏡面反射するように形成された薄膜であり、前記受光素子表面上の受光部の透過光を前記受光部に向けて反射するように形成された薄膜であることを特徴とする光半導体装置。 - 請求項1に記載の光半導体装置において、前記鏡面状の薄膜は、バリアメタルを含む裏面電極を備えることを特徴とする光半導体装置。
- 請求項2に記載の光半導体装置において、前記鏡面状の薄膜は、パターン化されていることを特徴とする光半導体装置。
- 請求項2に記載の光半導体装置において、前記鏡面状の薄膜は、パターン化されており、前記光半導体装置は、前記鏡面状の薄膜の底部にオーミック電極である第2の裏面電極が形成されたことを特徴とする光半導体装置。
- 請求項3または4に記載の光半導体装置において、前記パターン化された前記鏡面状の薄膜の全部または一部は、前記受光部を通る光軸が中央になるように形成されていることを特徴とする光半導体装置。
- 請求項1に記載の光半導体装置において、前記鏡面状の薄膜は、絶縁膜を備えることを特徴とする光半導体装置。
- 請求項6に記載の光半導体装置において、前記鏡面状の薄膜は、前記絶縁膜と該絶縁膜の底部の裏面電極とを備えることを特徴とする光半導体装置。
- 請求項6に記載の光半導体装置において、前記鏡面状の薄膜は、前記絶縁膜と該絶縁膜の底部の裏面電極とを備え、パターン化されていることを特徴とする光半導体装置。
- 請求項6に記載の光半導体装置において、前記鏡面状の薄膜は、前記絶縁膜と該絶縁膜の底部の第1の裏面電極とを備え、パターン化されており、前記半導体装置は、前記鏡面状の薄膜の底部にオーミック電極である第2の裏面電極が形成されたことを特徴とする光半導体装置。
- 請求項8または9に記載の光半導体装置において、前記パターン化された前記鏡面状の薄膜の全部または一部は、前記受光部を通る光軸が中央になるように形成されていることを特徴とする光半導体装置。
- 請求項1乃至10の何れか1項に記載の光半導体装置が筐体に収納されたことを特徴とする光半導体装置。
- 請求項1乃至11の何れか1項に記載の光半導体装置において、前記受光素子が2次元に配置された構造を有することを特徴とする光半導体装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011015580A JP5296816B2 (ja) | 2011-01-27 | 2011-01-27 | 光半導体装置 |
CN201210017208.5A CN102623544B (zh) | 2011-01-27 | 2012-01-19 | 光半导体装置 |
CN2012200254729U CN202817007U (zh) | 2011-01-27 | 2012-01-19 | 光半导体装置 |
US13/356,104 US8704322B2 (en) | 2011-01-27 | 2012-01-23 | Optical semiconductor device |
US14/196,474 US8916946B2 (en) | 2011-01-27 | 2014-03-04 | Optical semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011015580A JP5296816B2 (ja) | 2011-01-27 | 2011-01-27 | 光半導体装置 |
Publications (2)
Publication Number | Publication Date |
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JP2012156391A JP2012156391A (ja) | 2012-08-16 |
JP5296816B2 true JP5296816B2 (ja) | 2013-09-25 |
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JP2011015580A Active JP5296816B2 (ja) | 2011-01-27 | 2011-01-27 | 光半導体装置 |
Country Status (3)
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US (2) | US8704322B2 (ja) |
JP (1) | JP5296816B2 (ja) |
CN (2) | CN202817007U (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5296816B2 (ja) | 2011-01-27 | 2013-09-25 | 日本電信電話株式会社 | 光半導体装置 |
JP2014165224A (ja) * | 2013-02-21 | 2014-09-08 | Nippon Telegr & Teleph Corp <Ntt> | 光半導体装置および光半導体装置の製造方法 |
CN108400214A (zh) * | 2013-10-11 | 2018-08-14 | 世迈克琉明有限公司 | 半导体发光元件 |
EP3118664B1 (en) * | 2015-07-17 | 2019-06-19 | Lg Electronics Inc. | Micro mirror array, manufacturing method of the micro mirror array, and floating display device including the micro mirror array |
JP2018098399A (ja) * | 2016-12-14 | 2018-06-21 | 日本電信電話株式会社 | 半導体受光素子 |
Family Cites Families (7)
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JPH0750404A (ja) * | 1993-08-05 | 1995-02-21 | Sumitomo Electric Ind Ltd | 光電子集積回路 |
US6061111A (en) * | 1995-11-30 | 2000-05-09 | Sony Corporation | Reflective LCD having orientation film formed on quarter wavelayer and planarizing film formed on reflector layer |
EP0926744B8 (en) * | 1997-12-15 | 2008-05-21 | Philips Lumileds Lighting Company, LLC. | Light emitting device |
JP2003249675A (ja) * | 2002-02-26 | 2003-09-05 | Sumitomo Electric Ind Ltd | 受光素子アレイ |
CN100373635C (zh) * | 2005-12-22 | 2008-03-05 | 南开大学 | 柔性衬底薄膜太阳电池阻挡层及其制备方法 |
JP2007266251A (ja) * | 2006-03-28 | 2007-10-11 | Nippon Telegr & Teleph Corp <Ntt> | 光半導体装置 |
JP5296816B2 (ja) * | 2011-01-27 | 2013-09-25 | 日本電信電話株式会社 | 光半導体装置 |
-
2011
- 2011-01-27 JP JP2011015580A patent/JP5296816B2/ja active Active
-
2012
- 2012-01-19 CN CN2012200254729U patent/CN202817007U/zh not_active Expired - Lifetime
- 2012-01-19 CN CN201210017208.5A patent/CN102623544B/zh active Active
- 2012-01-23 US US13/356,104 patent/US8704322B2/en active Active
-
2014
- 2014-03-04 US US14/196,474 patent/US8916946B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
US20120193740A1 (en) | 2012-08-02 |
US8704322B2 (en) | 2014-04-22 |
US20140183677A1 (en) | 2014-07-03 |
CN102623544A (zh) | 2012-08-01 |
CN202817007U (zh) | 2013-03-20 |
JP2012156391A (ja) | 2012-08-16 |
CN102623544B (zh) | 2015-05-20 |
US8916946B2 (en) | 2014-12-23 |
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