JP5285833B2 - 微細構造を改修するためのシステム - Google Patents
微細構造を改修するためのシステム Download PDFInfo
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- JP5285833B2 JP5285833B2 JP2005116316A JP2005116316A JP5285833B2 JP 5285833 B2 JP5285833 B2 JP 5285833B2 JP 2005116316 A JP2005116316 A JP 2005116316A JP 2005116316 A JP2005116316 A JP 2005116316A JP 5285833 B2 JP5285833 B2 JP 5285833B2
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- 238000000034 method Methods 0.000 claims description 102
- 239000003792 electrolyte Substances 0.000 claims description 71
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 44
- 229910052802 copper Inorganic materials 0.000 claims description 43
- 239000010949 copper Substances 0.000 claims description 43
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- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052742 iron Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052702 rhenium Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 claims description 2
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- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
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- 150000001768 cations Chemical class 0.000 description 2
- MEAHOQPOZNHISZ-UHFFFAOYSA-M cesium;hydrogen sulfate Chemical compound [Cs+].OS([O-])(=O)=O MEAHOQPOZNHISZ-UHFFFAOYSA-M 0.000 description 2
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- ZONODCCBXBRQEZ-UHFFFAOYSA-N platinum tungsten Chemical compound [W].[Pt] ZONODCCBXBRQEZ-UHFFFAOYSA-N 0.000 description 2
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- -1 Fe (iron) Chemical class 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000002033 PVDF binder Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- SHEGNBCAYSUQEV-UHFFFAOYSA-N [Cu+].CC(C)=C(C)[SiH3] Chemical compound [Cu+].CC(C)=C(C)[SiH3] SHEGNBCAYSUQEV-UHFFFAOYSA-N 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229960001716 benzalkonium Drugs 0.000 description 1
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 description 1
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 1
- 238000012512 characterization method Methods 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
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- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
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- 239000010436 fluorite Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
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- 238000007735 ion beam assisted deposition Methods 0.000 description 1
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- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
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- 238000004544 sputter deposition Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
- H01L21/76894—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern using a laser, e.g. laser cutting, laser direct writing, laser repair
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/66—Electroplating: Baths therefor from melts
- C25D3/665—Electroplating: Baths therefor from melts from ionic liquids
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/12—Etching of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F3/00—Electrolytic etching or polishing
- C25F3/02—Etching
- C25F3/14—Etching locally
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
- H01L21/76892—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances modifying the pattern
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- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Electrochemistry (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electrodes Of Semiconductors (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Description
本発明のいくつかの好適実施の形態は、「回路修正」の分野、すなわち、電析又は電気エッチングのような、異種電子電荷転移機構によって電気通路を加えたり取り除いたりして集積回路内の接続を変更するような分野で利用されている。特に、本発明は、粉砕して穴(via)を形成し、穴(via)を充填し、高アスペクト比の穴(via)を通して金属線を切断し、そして、導線を迅速に生成することにとって有効である。
荷電粒子ビーム802が集束イオンビームである場合、陽極化学反応を誘発する陽イオンを供給し、結果的に、ワークピースにおいて陰極反応となりワークピース上の堆積となる。イオンビームは二次電子を放出するが、これらはワークピースへの電流にも貢献することができる。荷電粒子ビーム802が電子ビームである場合、このビームは、ビームの動作状態に応じて、特に加速電圧に応じて、陰極反応又は陽極反応のいずれかを誘発することができる。電子ビームが陰極反応を誘発する場合、陽極反応とそれに続くエッチングがワークピースにおいて結果的に生じる。電子ビームが陽極反応を誘発する場合、陰極反応がワークピースにおいて生じ、結果的に堆積となる。
112、402…穴(via)
114…集積回路
116、404…導体層
118…ピン
120…カソード
126…電解質
122…電流源
128…陽極
124…ワイヤ
550,552…銅膜
554…ワークピース表面
700…真空チャンバ
702…荷電粒子ビームカラム
704…高圧電源
706…二次粒子検出器
802…荷電粒子ビーム
902…電子ビームカラム
904…電源
908…電子ビーム
910…粒子検出器
Claims (13)
- ビームを前記微視構造物に向かって発射して埋設された導体の領域を露呈させる工程と、
該露呈された導体の領域に対して電解質を局部的に塗布する工程と、
前記露呈された導体と前記電解質に電圧を引加して電気化学的反応によって材料を堆積するか、又は、導体から材料を取り除く工程とからなる、微視構造物を変更する方法であって、前記ビームを前記微視構造物に向かって発射して埋設された導体の領域を露呈させる前記工程が真空チャンバ内で荷電粒子ビームをワークピース上の前記微視構造物に向かって発射する工程を有し、更に、
前記露呈された導体の領域に対して電解質を局部的に塗布する前記工程が、前記真空チャンバ内において電解質を塗布する工程を有することを特徴とする方法。 - 前記露呈された導体と電解質に電圧を引加して電気化学的反応によって材料を堆積するか、又は、導体から材料を取り除く前記工程が、負電圧を導体に印加し、更に、陽電圧を電解質に印加してその電圧が電解質からの材料を導体上に堆積するようにする工程を含むことを特徴とする前記請求項1に記載の方法。
- 前記導体が銅からなり、該導体上に堆積された材料が銅であることを特徴とする前記請求項1に記載の方法。
- 前記ビームを前記微視構造物に向かって発射して埋設された導体の領域を露呈させる前記工程がアクセス穴を開ける工程を有し、更に、導電材料の種層を前記アクセス穴の側面に堆積する工程とからなることを特徴とする前記請求項1に記載の方法。
- 堆積された若しくは取り除かれた材料が、Cu、W、Au、Pt、Pd、Ag、Ni、Cr、Al、Ta、Zn、Fe、Co、Re、又は合金からなることを特徴とする前記請求項1に記載の方法。
- 前記電解質がイオン液体であることを特徴とする前記請求項1に記載の方法。
- 前記荷電粒子ビームをワークピース上の前記微視構造物に向かって発射する工程が、低真空電子ビームシステムにおいて電子ビームを発射する工程を有し、
前記電解質が水溶性液体であることを特徴とする前記請求項1に記載の方法。 - ビームを発射して被覆材料を取り除いて被覆された導体を露呈させる工程と、
電解質を前記露呈された導体に塗布する工程と、
前記電解質と前記露呈された導体に電流を通して、導電材料を前記露呈された導体の上に堆積する工程とからなる導体を堆積する方法であって、
前記電解質を塗布する工程が、低揮発性の電解質を塗布する工程を有し、
電解質を塗布する工程と電流を流す工程が、共に真空チャンバ内で行われることを特徴とする方法。 - 前記導電材料が、50μΩ・cm未満の抵抗率を有する銅材料を含むことを特徴とする前記請求項8に記載の方法。
- 前記導電材料が、25μΩ・cm未満の抵抗率を有する銅材料を含むことを特徴とする前記請求項9に記載の方法。
- 更に、前記ビームを発射して被覆材料を取り除いて被覆された導体を露呈させる前記工程が、前記ビームを発射して被覆材料を取り除いて被覆された第2の導体を露呈させる工程を有することと、
前記電解質を前記露呈された導体に塗布する前記工程が、電解質を前記露呈された第2の導体に塗布すると共に、前記第1と第2の導体間の領域にも塗布する工程を有することと、
前記電解質と前記露呈された導体に電流を通して、前記導電材料を前記露呈された導体の上に堆積する前記工程が、前記電解質と前記露呈された第2の導体に電流を通して、導電材料を前記露呈された第2の導体の上に堆積する工程を有することを特徴とする前記請求項8に記載の方法。 - 更に、前記露呈された導体と前記露呈された第2の導体の間の領域上に導電材料を前もって堆積する工程を有し、
前記電解質を前記露呈された導体に塗布する前記工程が、電解質を前記導体材料の上に堆積する工程を有することと、
前記電解質に電流を流して第2の導電層を堆積させ、前記露呈された第1の導体と前記露呈された第2の導体を接続することを特徴とする前記請求項11に記載の方法。 - 前記低揮発性の電解質がイオン液体からなることを特徴とする前記請求項8に記載の方法。
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US11/081,934 US7674706B2 (en) | 2004-04-13 | 2005-03-16 | System for modifying small structures using localized charge transfer mechanism to remove or deposit material |
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EP (1) | EP1610377B1 (ja) |
JP (1) | JP5285833B2 (ja) |
KR (3) | KR20060092786A (ja) |
AT (1) | ATE541309T1 (ja) |
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US8163641B2 (en) | 2012-04-24 |
JP2005303319A (ja) | 2005-10-27 |
US20100151679A1 (en) | 2010-06-17 |
KR20120002503A (ko) | 2012-01-05 |
US20050227484A1 (en) | 2005-10-13 |
EP1610377B1 (en) | 2012-01-11 |
KR20130032889A (ko) | 2013-04-02 |
ATE541309T1 (de) | 2012-01-15 |
TWI493625B (zh) | 2015-07-21 |
KR101290561B1 (ko) | 2013-08-07 |
KR101290681B1 (ko) | 2013-07-31 |
KR20060092786A (ko) | 2006-08-23 |
US7674706B2 (en) | 2010-03-09 |
TW200608492A (en) | 2006-03-01 |
EP1610377A3 (en) | 2009-04-29 |
TWI411043B (zh) | 2013-10-01 |
EP1610377A2 (en) | 2005-12-28 |
TW201342479A (zh) | 2013-10-16 |
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